1. A vertical-type non-volatile memory device, comprising:
an insulation layer pattern provided on a substrate, the insulation layer pattern having a linear shape that extends in a first direction on the substrate;
single-crystalline semiconductor patterns provided on the substrate to make contact with a first sidewall and a second sidewall opposite to the first sidewall of the insulation layer pattern, each of the single-crystalline semiconductor patterns being separated by the insulation layer pattern, the single-crystalline semiconductor patterns having a pillar shape that extends in a vertical direction relative to the substrate;
a tunnel oxide layer making contact with at least a portion of a sidewall of the single-crystalline semiconductor patterns, the contact portions of the tunnel oxide layer being spaced apart from one another in the vertical direction by a predetermined distance;
a charge-trapping layer and a blocking dielectric layer provided on the tunnel oxide layer;
control gate patterns provided on the blocking dielectric layer to face the sidewall of the single-crystalline semiconductor patterns, the control gate patterns having a linear shape, wherein a plurality of the control gate patterns are spaced apart from one another by a predetermined distance and are stacked in a multilayered structure; and
a plurality of the insulation interlayer patterns provided in a gap between upper and lower layers of the control gate patterns, making contact with the sidewall of the single-crystalline semiconductor patterns,
wherein the tunnel oxide layer is conformally formed on the profile of the sidewall of the single-crystalline semiconductor patterns, and upper and bottom surfaces of the insulation interlayer patterns.
2. The vertical-type non-volatile memory device of claim 1, wherein the charge-trapping layer and blocking dielectric layer in each of the layer are conformally formed on the profile of the sidewall of the single-crystalline semiconductor patterns, and upper and bottom surfaces of the insulation interlayer patterns.
3. The vertical-type non-volatile memory device of claim 1, wherein the single-crystalline semiconductor patterns comprises single-crystalline silicon.
4. The vertical-type non-volatile memory device of claim 1, wherein the sum of a line width of the insulation layer pattern and line widths of two single-crystalline semiconductor patterns provided on both sides of the insulation layer pattern is substantially the same as the critical dimensions of a trench to be formed through a photolithography process.
5. The vertical-type non-volatile memory device of claim 1, further comprising a metal silicide pattern provided on a surface of the control gate patterns to face the sidewall of the single-crystalline semiconductor patterns.
6. The vertical-type non-volatile memory device of claim 5, wherein the metal silicide pattern comprises at least one selected from the group consisting of cobalt silicide, nickel silicide and palladium silicide.
7. A vertical-type non-volatile memory device, comprising:
an insulation layer pattern provided on a substrate, the insulation layer pattern having a linear shape that extends in a first direction on the substrate;
single-crystalline semiconductor patterns provided on the substrate to make contact with a first sidewall and a second sidewall opposite to the first sidewall of the insulation layer pattern, the single-crystalline semiconductor patterns being separated by the insulation layer pattern, the single-crystalline semiconductor patterns having a pillar shape that extends in a vertical direction relative to the substrate;
a tunnel oxide layer making contact with at least a portion of a sidewall of the single-crystalline semiconductor patterns, the contact portions of the tunnel oxide layer being spaced apart from one another in the vertical direction by a predetermined distance;
a charge-trapping layer and a blocking dielectric layer provided on the tunnel oxide layer;
control gate patterns provided on the blocking dielectric layer to face the sidewall of the single-crystalline semiconductor patterns, the control gate patterns having a linear shape, wherein a plurality of the control gate patterns are spaced apart from one another by a predetermined distance and are stacked in a multilayered structure; and
a plurality of the insulation interlayer patterns provided in a gap between upper and lower layers of the control gate patterns, making contact with the sidewall of the single-crystalline semiconductor patterns,
wherein the charge-trapping layer and blocking dielectric layer in each of the layer are conformally formed on the profile of the sidewall of the single-crystalline semiconductor patterns, and upper and bottom surfaces of the insulation interlayer patterns.
8. The vertical-type non-volatile memory device of claim 7, wherein the tunnel oxide layer is conformally formed on the profile of the sidewall of the single-crystalline semiconductor patterns, and upper and bottom surfaces of the insulation interlayer patterns.
9. The vertical-type non-volatile memory device of claim 7, wherein the single-crystalline semiconductor patterns comprises single-crystalline silicon.
10. The vertical-type non-volatile memory device of claim 7, wherein the sum of a line width of the insulation layer pattern and line widths of two single-crystalline semiconductor patterns provided on both sides of the insulation layer pattern is substantially the same as the critical dimensions of the trench to be formed through a photolithography process.
11. The vertical-type non-volatile memory device of claim 7, further comprising a metal silicide pattern provided on a surface of the control gate patterns to face the sidewall of the single-crystalline semiconductor patterns.
12. The vertical-type non-volatile memory device of claim 11, wherein the metal silicide pattern comprises at least one selected from the group consisting of cobalt silicide, nickel silicide and palladium silicide.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. An electrode core material comprising: a substrate and at least one porous material layer diffusion-bonded to said substrate, said substrate comprising a metal foil having a three-dimensional structure which is substantially deformed from a major plane of the metal foil, said porous material layer comprising metal fine particles diffusion-bonded to each other, and said porous material layer having a three-dimensional structure which is substantially uniform in thickness and porosity.
2. The electrode core material in accordance with claim 1, wherein the substantially deformed three-dimensional structure of the substrate comprises a plurality of curved bulges protruding from at least one of a front and a back side of said substrate.
3. The electrode core material in accordance with claim 2, wherein the curved bulges have a strip-shaped form which is laterally bounded by slits in the metal foil.
4. The electrode core material in accordance with claim 2, wherein the curved bulges protrude in an alternating manner from the front and back sides of the substrate.
5. The electrode core material in accordance with claim 2, wherein the substantially deformed three-dimensional structure of the substrate comprises a plurality of rows of bulge portions and a flat portion having a predetermined width interposed between the rows of bulge portions, each of said rows of bulge portions comprising first and second strip-shaped, curved bulge portions, said first and second strip-shaped, curved bulge portions protruding respectively from front and back sides of said substrate in an alternating manner along a first planar direction, said bulge portion rows being aligned along a second planar direction orthogonal to said first planar direction.
6. The electrode core material in accordance with claim 1, wherein said porous material layer has a thickness of about 5 to 50 m per one layer.
7. The electrode core material in accordance with claim 1, wherein said metal foil comprises electrolytic nickel and has a non-deformed thickness of about 10 to 35 m.
8. A method of producing an electrode core material, comprising the steps of:
(a) preparing a paste comprising metal fine particles and a thickener;
(b) atomizing said paste and applying said atomized paste to at least one surface of a metal foil;
(c) drying said paste applied to said metal foil and sintering said paste together with said metal foil in a reducing atmosphere, thereby producing at least one porous material layer diffusion-bonded to said metal foil; and
(d) processing said metal foil, having said porous material layer diffusion-bonded thereto, into a three-dimensional structure which is substantially deformed from a major plane of the metal foil.
9. The method of producing an electrode core material in accordance with claim 8, wherein the atomizing step is carried out using a binary-fluid nozzle.
10. The method of producing an electrode core material in accordance with claim 8, wherein said processing step (d) comprises forming, in said metal foil having said porous material layer diffusion-bonded thereto, a plurality of slits in a fixed direction at fixed intervals in rows in X- and Y-directions of the metal foil plane, and causing a strip-shaped portion between two laterally spaced slits to bulge from a front or back side of said metal foil, wherein a plurality of said strip-shaped portions bulge from opposite sides of said metal foil, alternating in at least one of said X- and Y-directions.
11. The method of producing an electrode core material in accordance with claim 8, wherein said metal fine particles comprise carbonyl nickel powder.
12. The method of producing an electrode core material in accordance with claim 11, wherein said metal fine particles further comprise at least one additive powder selected from the group consisting of a cobalt powder and a cobalt compound powder, said additive powder being present in an amount of about 3 to 10 parts by weight per 100 parts by weight of said carbonyl nickel powder.
13. A method of producing an electrode core material, comprising the steps of:
(a) preparing a paste comprising metal fine particles and a thickener;
(b) producing a substrate comprising a metal foil processed into a three-dimensional structure which is substantially deformed from a major plane of said metal foil;
(c) atomizing said paste and applying said atomized paste to at least one surface of said substrate;
(d) drying said paste applied to said substrate and sintering said paste together with said substrate in a reducing atmosphere, thereby producing at least one porous material layer diffusion-bonded to said substrate.
14. The method of producing an electrode core material in accordance with claim 13, wherein said step (b) comprises forming in said metal foil a plurality of slits in a fixed direction at fixed intervals in rows in X- and Y-directions of the metal foil plane, and causing a strip-shaped portion between two laterally spaced slits to bulge from a front or back side of said metal foil, wherein a plurality of said strip-shaped portions bulge from opposing sides of said metal foil, alternating in at least one of said X- and Y-directions.
15. The method of producing an electrode core material in accordance with claim 13, wherein said atomizing step is carried out using a binary-fluid nozzle
16. The method of producing an electrode core material in accordance with claim 13, wherein said metal fine particles comprise carbonyl nickel powder.
17. An alkaline storage battery comprising: a positive electrode plate; a negative electrode plate; a separator interposed between said positive electrode plate and said negative electrode plate; and an alkaline electrolyte, wherein at least one of said positive electrode plate and said negative electrode plate comprises a core material and an active material, said core material comprising a substrate and at least one porous material layer diffusion bonded to said substrate, said substrate comprising a metal foil having a three-dimensional structure which is substantially deformed from a major plane of the metal foil, said porous material layer comprising metal fine particles diffusion-bonded to each other, said porous material layer having a three-dimensional structure which is substantially uniform in thickness and porosity, and at least a portion of said active material being filled into pores of said porous material layer to form a mixed layer comprising said metal fine particles and said active material.