1. A semiconductor crystal film comprising a multi-layer film that is formed by alternately stacking, a plurality of times, a set of semiconductor layers each mutually differing from every other in composition, and that serves as a single Si1-A-BGeACB layer (0<A<1 and 0<B<1),
wherein said multi-layer film includes at least:
a Si1-x1-y1Gex1Cy1 layer (0<x1<1 and 0<y1<1); and
Si1-x2-y2Gex2Cy2 layer (0<x2<1 and 0<y2<1)
wherein x1<x2, y1>y2, and x1 and y2 are not simultaneously 0.
2. The semiconductor crystal film of claim 1, wherein each of the semiconductor layers in the multi-layer film is thinner than the thickness at which discrete quantum levels arise in the layer.
3. The semiconductor crystal film of claim 1, wherein x1\u22600.
4. The semiconductor crystal film of claim 1, wherein x1=0 and y2\u22600.
5. The semiconductor crystal film of claim 1, wherein the multi-layer film contains more C than the upper limit of the C mole fraction given by the Ge mole fraction as determined by deviceprocess conditions in the single-layer SiGeC layer.
6. The semiconductor crystal film of claim 1, wherein each of the Si1-x1-y1Gex1Cy1 layer and the Si1-x2-y2Gex2Cy2 layer has a thickness of 3 nm or less.
7. The semiconductor crystal film of claim 6, wherein each of the Si1-x1-y1Gex1Cy1 layer and the Si1-x2-y2Gex2Cy2 layer has a thickness of 1.5 nm or less.
8. The semiconductor crystal film of claim 1, wherein the multi-layer film serves as a SiGeC layer having a Ge mole fraction of 30 atm. % or higher and a C mole fraction of 1.2 atm. % or higher.
9. A semiconductor device comprising:
an underlying semiconductor layer containing at least Si; and
a multi-layer film that is formed on the underlying semiconductor layer by alternately stacking, a plurality of times, a set of semiconductor layers each mutually differing from every other in composition and that serves as a single Si1-A-BGeACB layer (0<A<1 and 0<B<1)
wherein the multi-layer film includes at least:
a Si1-x1-y1Gex1Cy1 layer (0<x1<1 and 0<y1); and
a Si1-x2-y2Gex2Cy2 layer (0<x2<1 and 0<y2<1), wherein x1<x2, y1<y2, and x1 and y2 are not simultaneously 0.
10. The semiconductor device of claim 9, wherein each of the semiconductor layers in the multi-layer film is thinner than the thickness at which discrete quantum levels arise in the layer.
11. The semiconductor device of claim 9, wherein each of the Si1-x1-y1Gex1Cy1 layer and the Si1-x2-y2Gex2Cy2 layer has a thickness of 3 nm or less.
12. The semiconductor device of claim 11, wherein each of the Si1-x1-y1Gex1Cy1 layer and the Si1-x2-y2Gex2Cy2 layer has a thickness of 1.5 nm or less.
13. The semiconductor device of claim 9, wherein the multi-layer film serves as a SiGeC layer having a Ge mole fraction of 30 atm. % or higher and a C mole fraction of 1.2 atm. % or higher.
14. The semiconductor device of claim 9, wherein the semiconductor device is a MISFET in which the multi-layer film serves as a channel.
15. The semiconductor device of claim 9, wherein the semiconductor device is a bipolar transistor in which the multi-layer film serves as a base layer.
16. A method for producing a semiconductor crystal film comprising a multi-layer film that is formed by alternately stacking, a plurality of times, a set of semiconductor layers each mutually differing from every other in composition and that serves as a single Si1-A-BGeACB layer (0<A<1 and 0<B<1), the method comprising the steps of:
a) epitaxially growing, on an underlying semiconductor layer, a semiconductor layer that is one of either a Si1-x1-y1Gex1Cy1 layer (0x1<1 and 0y1<1) or a Si1-x2-y2Gex2Cy2 layer (0<x2<1 and 0<y2<1, wherein x1<x2, y1<y2, and x1 and y2 are not simultaneously 0; and
b) epitaxially growing, on the semiconductor layer grown by said step a), another semiconductor layer that is the other of either the Si1-x1-y1Gex1Cy1 layer or the Si1-x2-y2Gex2Cy2 layer,
wherein said steps a) and b) are repeated a plurality of times.
17. The method of claim 16, wherein in said steps a) and b), each of the semiconductor layers in the multi-layer film is epitaxially grown to be thinner than the thickness at which discrete quantum levels arise in the layer.
18. The method of claim 16, wherein:
in said steps a) and b), at least one of the semiconductor layers in the multi-layer film is epitaxially grown to a thickness exceeding 1.5 nm; and
the method further includes the step of performing a heat treatment on the multi-layer film.
19. The method of claim 16, wherein in epitaxially growing the semiconductor layers containing Si, Ge and C during said steps a) and b), a disilane or monosilane gas, a germane gas and a monometylsilane gas are decomposed by heat.
20. A method for fabricating a semiconductor device, the semiconductor device including an underlying semiconductor layer containing at least Si and a multi-layer film that is formed on the underlying semiconductor layer by alternately stacking, a plurality of times, a set of semiconductor layers each mutually differing from every other in composition and that serves as a single Si1-A-BGeACB layer (0A1 and 0<B<1), the method comprising the steps of:
a) epitaxially growing, on the underlying semiconductor layer, a semiconductor layer that is one of either a Si1-x1-y1Gex1Cy1 layer (0<x1<1 and 0<y1<1) or a Si1-x2-y2Gex2Cy2 layer (0<x2<1 and 0<y2<1), wherein x1<lx2, y1<y2, and x1 and y2 are not simultaneously 0; and
b) epitaxially growing, on the semiconductor layer grown by said step a), another semiconductor layer of the other of either the Si1-x1-y1Gex1Cy1 layer or the Si1-x2-y2Gex2Cy2 layer,
wherein said steps a) and b) are repeated a plurality of times.
21. The method of claim 20, wherein in said steps a) and b), each of the semiconductor layers in the multi-layer films is epitaxially grown to be thinner than the thickness at which discrete quantum levels arise in the layer.
22. The method of claim 20, wherein: in said steps a) and b), at least one of the semiconductor layers in the multi-layer film is epitaxially grown to a thickness exceeding 1.5 nm; and the method further includes the step of performing a heat treatment on the multi-layer film.
23. The method of claim 20, wherein in epitaxially growing the semiconductor layers containing Si, Ge and C during said steps a) and b), a disilane or monosilane gas, a germane gas and a monometylsilane gas are decomposed by heat.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A fabric for a garment, comprising:
a first structure for a first zone of the garment that extends from a first end intended for toes of a wearer to a level of ankle bones of the wearer, the first structure being a knitted floating mesh pattern in a textile material with an outer surface that is opposite that in contact with skin of the wearer and that is smooth; and
a second structure for a second zone of the garment that extends from the aforementioned ankle bones to a distal second end opposite the first end, the second structure being a knitted woven mesh pattern, in an adapted elastic textile material with a weave titer of between 240 dtex and 600 dtex in such a way as to afford compression or support in the second zone greater than in the first zone, wherein the floating mesh pattern includes four courses of mesh sequentially arranged with a first of the courses comprising meshes whose loops are completely formed on all wales of the pattern, a second of the courses comprising meshes whose loops are completely formed on even wales and whose loops are not formed at all on odd wales, a third of the courses comprising meshes whose loops are completely formed on all wales of the pattern, and a fourth of the courses comprising meshes whose loops are completely formed on odd wales and whose loops are not formed at all on even wales.
2. The fabric according to claim 1, wherein the smooth textile material used for the first structure is a synthetic textile material with a flat synthetic filament, untextured and in combination with an elastothane.
3. The fabric according to claim 1, wherein the smooth textile material used for the first structure is a polyamide in the form of a filament.
4. The fabric according to claim 1, wherein the textile material used for the second structure comprises at most 50% by weight of a natural textile material.
5. The fabric according to claim 1, wherein the textile material used for the first andor second structure comprises a synthetic textile material with an improved physico-chemical property.
6. The fabric according to claim 1, further comprising an alternative knitted heel with a flat synthetic filament.
7. The fabric according to claim 1, wherein the compression or support applied to the wearer at the level of the first zone is less than 13 hPa.
8. The fabric according to claim 1, wherein the compression or support applied to the wearer at the level of the second zone is between 13 and 30 hPa.
9. The fabric according to claim 1, wherein the fabric is part of a stocking or an under-stocking.
10. The fabric according to claim 1, wherein the fabric is part of tights or undertights.
11. The fabric according to claim 1, wherein the fabric is part of legging or an underlegging.
12. The fabric according to claim 1, wherein the fabric is part of a sock or an undersock.
13. A fabric for a garment, comprising:
a first structure for a first zone of the garment that extends from a first end intended for toes of a wearer to a level of ankle bones of the wearer, the first structure being a knitted floating mesh pattern in a textile material with an outer surface that is opposite that in contact with skin of the wearer and that is smooth, the floating mesh pattern providing a compression to the wearer in the first zone less than 13 hPa; and
a second structure for a second zone of the garment that extends from the ankle bones to a second distal end opposite the first end, the second structure being a knitted woven mesh pattern in an adapted elastic textile material with a weave titer of between 240 dtex and 600 dtex, the knitted woven mesh pattern providing a compression in the second zone between 13 and 30 hPa, wherein the floating mesh pattern includes four courses of mesh sequentially arranged with a first of the courses comprising meshes whose loops are completely formed on all wales of the pattern, a second of the courses comprising meshes whose loops are completely formed on even wales and whose loops are not formed at all on odd wales, a third of the courses comprising meshes whose loops are completely formed on all wales of the pattern, and a fourth of the courses comprising meshes whose loops are completely formed on odd wales and whose loops are not formed at all on even wales.
14. An undergarment comprising the fabric of claim 13.