1. A method of manufacturing a semiconductor device, comprising:
forming gate electrodes in a non-bipolar transistor region of a semiconductor substrate;
placing a polysilicon layer over the gate electrodes in the non-bipolar transistor region and over the semiconductor substrate within a bipolar transistor region;
forming a protective layer over the polysilicon layer, the protective layer having a weight percent of hydrogen that is less than about 9% and is selective to silicon germanium (SiGe) deposition, such that SiGe does not form on the protective layer; and
forming emitters for bipolar transistors in the bipolar transistor region, including forming a SiGe layer under a portion of the polysilicon layer.
2. The method recited in claim 1, wherein the protective layer is resistive to a hydrofluoric etch.
3. The method recited in claim 1, wherein the protective layer comprises oxides, nitrides or combinations thereof.
4. The method recited in claim 1, wherein the protective layer is a silicon oxynitride stack.
5. The method recited in claim 4, wherein a first layer of the protective layer is formed by a plasma enhanced chemical vapor deposition process, including flowing N2O at a flow rate ranging from about 40 sccm to about 450 sccm, flowing SiH4 at a flow rate ranging from about 75 sccm to about 175 sccm and flowing an inert carrier gas at a flow rate ranging from about 1500 seem to about 3500 sccm, and at a temperature ranging from about 350\xb0 C. to about 450\xb0 C. and a pressure ranging from about 3 torr to about 10 torr and wherein the deposition is conducted at a power ranging from about 75 watts to about 200 watts.
6. The method recited in claim 4, wherein a second layer of the protective layer is formed by a plasma enhanced chemical vapor deposition process, including flowing N2O at a flow rate ranging from about 40 sccm to about 450 sccm, flowing SiH4 at a flow rate ranging from about 75 sccm to about 175 sccm and flowing an inert carrier gas at a flow rate ranging from about 1500 sccm to about 3500 sccm, and at a temperature ranging from about 350\xb0 C. to about 450\xb0 C. and a pressure ranging from about 3 torr to about 10 torr and wherein the deposition is conducted at a power ranging from about 75 watts to about 200 watts.
7. The method recited in claim 4, wherein a third layer of the protective layer is formed by a plasma enhanced chemical vapor deposition process, including flowing N2O at a flow rate ranging from about 40 sccm to about 450 sccm, flowing SiH4 at a flow rate ranging from about 75 sccm to about 175 sccm and flowing an inert carrier gas at a flow rate ranging from about 1500 seem to about 3500 sccm, and at a temperature ranging from about 350\xb0 C. to about 450\xb0 C. and a pressure ranging from about 3 torr to about 10 torr and wherein the deposition is conducted at a power ranging from about 75 watts to about 200 watts.
8. The method recited in claim 1, wherein the semiconductor device is an integrated circuit and the gate electrodes form a part of non-bipolar transistors and the method further includes forming dielectric layers over the non-bipolar transistors and the bipolar transistors and forming interconnects over and within the dielectric layer to interconnect the bipolar transistors and the non-bipolar transistors.
9. A method of manufacturing a semiconductor device, comprising:
forming gate electrodes in a non-bipolar transistor region and over a semiconductor substrate;
placing a polysilicon layer over the gate electrodes in the non-bipolar transistor region and over a bipolar transistor region of the semiconductor substrate;
forming a dielectric layer over the polysilicon layer;
forming a protective layer over the polysilicon layer, the protective layer having a weight percent of hydrogen that is less than about 9%, wherein the protective layer is selective to silicon germanium (SiGe) deposition, such that SiGe does not form on the protective layer;
forming a silicongermanium (SiGe) layer over a collector tub and under a portion of the polysilicon layer within the bipolar transistor region;
forming an emitter layer for bipolar transistors in the bipolar transistor region and over the protective layer and the SiGe layer;
patterning the dielectric layer, the protective layer and the emitter layer, including removing the protective layer from the non-bipolar transistor region; and
patterning the polysilicon layer.
10. The method recited in claim 9, wherein the protective layer is resistive to a hydrofluoric clean.
11. The method recited in claim 9, wherein the protective layer comprises silicon oxynitride.
12. The method recited in claim 11, wherein:
a first layer of the protective layer is formed by a plasma enhanced chemical vapor deposition process, including flowing N2O at a flow rate of 68, flowing SiH4 at a flow rate of about 125 sccm and flowing an inert carrier gas at a flow rate of about 2500 sccm;
a second layer of the protective layer is formed by a plasma enhanced chemical vapor deposition process, including flowing N2O at a flow rate of about 270 sccm, flowing SiH4 at a flow rate of about 125 sccm and flowing an inert carrier gas at a flow rate of about 2500 sccm; and
a third layer of the protective layer is formed by a plasma enhanced chemical vapor deposition process, including flowing N2O at a flow rate of about 350 sccm, flowing SiH4 at a flow rate of about 125 sccm and flowing an inert carrier gas at a flow rate of about 2500 sccm, and wherein the protective layer is formed at a temperature of about 410\xb0 C., a pressure of about 6 torr, and at a power of about 130 watts.
13. The method recited in claim 9, wherein the semiconductor device is an integrated circuit and the gate electrodes form a part of non-bipolar transistors and the method further includes forming dielectric layers over the non-bipolar transistors and the bipolar transistors and forming interconnects over and within the dielectric layer to interconnect the bipolar transistors and the non-bipolar transistors.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An apparatus for processing and stacking printed forms adapted to feed said forms for processing downstream thereof comprising:
a dual registering stacking interface for receiving continuously fed forms, transversely registering said forms and selectively stacking and transporting said forms to a first output end;
a sequencer merger for receiving said forms from said first output end, directing said forms in a selected order and transporting said forms to a second output end, said sequencer merger adaptable to process said forms as a stack of forms;
an accumulator for accumulating forms into a single set and transporting said forms to a third output end from which said forms are fed therefrom;
a folder for folding said accumulated forms and transporting said forms to a fourth output end; and,
a collector for receiving said folded forms from the fourth output end and transporting them to a fifth output end for further use or processing downstream thereof, said collector and said folder having a common drive, said collector including a drive pulley operably engaged to said drive and having an input shaft mounted thereon, at least one belt pulley arranged along said input shaft, each said at least one belt pulley having a transport belt engaged thereto for carrying folded pieces along a path, said collector further including at least one other belt pulley each engaged to a transport belt and being mounted on an output shaft at an output end thereof to be rotatable with a first said at least one belt pulley, said collector having a selectively moveable pinch mechanism operable to pinch a folded form against a transport belt and moveable away therefrom upon the transporting of said form outwardly of said output end, and a disengagement clutch for disengaging said input shaft from said drive pulley to stop transport belt movement.
2. The apparatus as in claim 1 wherein said moveable pinch mechanism includes a pinch roller mounted on a pivoting arm operable to sequentially move said pinch roller away from said transport belt and towards a transport belt when a folded form is transported thereat, whereby said disengagement clutch is selectively operable to disengage the input shaft from said drive pulley whereby a transport belt is stopped until the apparatus is signaled to feed a form from the output end of the collector.
3. The apparatus as in claim 2 wherein the collector includes retainers at the output end for capturing forms thereat until the apparatus is signaled to feed forms from the output end of the collector for further use or processing downstream.