1. A display device for an active matrix drive, comprising:
a plurality of pixels each having display retainability and including a first sub-pixel through an nth sub-pixel, n being a natural number greater than 1;
a selection switching element provided correspondingly to each of the sub-pixels, connected to a data line, and for selecting the corresponding sub-pixel; and
an external input switch provided correspondingly to each of the sub-pixels, connected to a selection line, and for supplying a signal from the selection line to the corresponding sub-pixel in response to an input operation from the outside,
wherein the selection line includes n kinds of selection lines, from a first selection line connected to the first sub-pixel to an nth selection line connected to the nth sub-pixel, and
the n kinds of selection lines are connected to selection switches for one of selecting the selection lines individually and selecting two or more of the selection lines in a lump.
2. The display device according to claim 1, wherein the sub-pixels display different colors from each other.
3. The display device according to claim 1, wherein the external input switch is a pressure-sensitive switching element.
4. The display device according to claim 3, wherein the pressure-sensitive switching element is a microelectromechanical switch.
5. The display device according to claim 1, wherein the selection switch is a pressure-sensitive switching element.
6. The display device according to claim 3, wherein the display device has a microcapsule encapsulating an electrophoretic dispersion liquid held between a pair of substrates, and a protective film attached to an outer surface of a display side substrate out of the pair of substrates.
7. An electronic paper comprising a display device according to claim 1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A semiconducting ceramic material comprising ATiO3 in which A is Ba or Ba and Sm and which exhibits a positive temperature coefficient of resistance, wherein a boundary temperature defined at the boundary between a first temperature range and a second temperature range is at least 180 C. higher than the Curie temperature of the material, wherein the first temperature range is higher than the Curie temperature and the ceramic material has a positive temperature coefficient of resistance in the first range, and the second temperature range is higher than the first temperature range and the ceramic material has a negative temperature coefficient of resistance in the second range.
2. A semiconducting ceramic material according to claim 1, wherein A is Ba and Sm.
3. A semiconducting ceramic material according to claim 2, wherein said material contains SiO2 and 0 to approximately 0.0001 mols of Mn per mol of ATiO3.
4. A semiconducting ceramic material according to claim 3, wherein said the SiO2 is in an amount of approximately 0.0005 mol per mol of ATiO2.
5. A semiconducting ceramic material according to claim 1, wherein said material contains SiO2 and 0 to approximately 0.0001 mols of Mn per mol of ATiO3.
6. A semiconducting ceramic material according to claim 5, wherein said the SiO2 is in an amount of approximately 0.0005 mol per mol of ATiO2.
7. A semiconducting ceramic material according to claim 1, wherein the boundary temperature is at least about 220 C. higher than the Curie temperature.
8. A semiconducting ceramic material according to claim 1, wherein A is Ba.
9. An electronic part comprising a plurality of internal electrodes and a semiconducting ceramic material as recited in claim 1, the internal electrodes and the semiconducting ceramic material being alternately superposed one on another.
10. A method of producing a semiconducting ceramic material, comprising
providing a mixture adapted to produce a semiconducting ATiO2 in which A is Ba or Ba and Sm;
calcining the mixture;
mixing the resultant calcined mixture with an organic binder;
compacting the resultant mixture, to thereby yield a compact;
firing the compact in an H2N2 atmosphere at a temperature lower than a temperature at which the mixture is completely sintered; and
re-oxidating of the fired compact in air.
11. A method of producing a semiconducting ceramic material according to claim 10, wherein the mixture is fired at a temperature of less than 1350 C.
12. A method of producing a semiconducting ceramic material according to claim 11, wherein the mixture is fired at a temperature of about 1225 to 1275 C. and the re-oxidating is at a temperature of about 1000 C.
13. A method of producing a semiconducting ceramic material according to claim 12, wherein the mixture contains Mn in a mol ratio of Mn to ATiO3 of 0 to approximately 0.0001.
14. A method of producing a semiconducting ceramic material according to claim 13, wherein the mixture contains SiO2 and the mol ratio of SiO2 to ATiO3 is approximately 0.0005.
15. A method of producing a semiconducting ceramic material according to claim 14, wherein A is Ba.
16. A method of producing a semiconducting ceramic material according to claim 14 wherein A is Ba and Sm.
17. A method of producing a semiconducting ceramic material according to claim 10, wherein the mixture contains Mn in a mol ratio of Mn to ATiO3 of 0 to approximately 0.0001.
18. A method of producing a semiconducting ceramic material according to claim 17 wherein the mixture contains SiO2 and the mol ratio of SiO2 to ATiO3 is approximately 0.0005.
19. A method of producing a semiconducting ceramic material according to claim 10, wherein A is Ba.
20. A method of producing a semiconducting ceramic material according to claim 10 wherein A is Ba and Sm.