1. A semiconductor package comprising:
a substrate having a first surface and a second opposing surface;
at least one electrical terminal on said first surface of said substrate;
at least one semiconductor die, said die including at least one electrode electrically connected to said at least one electrical terminal; and
a cover disposed over said opening and enclosing said semiconductor die.
2. A package according to claim 1, wherein said substrate includes a recess, said die being disposed within said recess.
3. A package according to claim 1, wherein said substrate includes an opening extending from said first surface to said second surface, said opening including a mouth at said first surface and a mouth at said second surface, wherein said mouth at said second surface is closed by a second electrical terminal, and wherein said semiconductor die is disposed on said second terminal.
4. A package according to claim 3, wherein said die includes at least another electrode which is electrically and mechanically connected to said second terminal by a conductive adhesive.
5. A package according to claim 4, wherein said conductive adhesive is solder.
6. A package according to claim 1, wherein said cover includes an enclosure and a lid attached to said enclosure.
7. A package according to claim 6, wherein said lid is comprised of Kovar or Alloy 42.
8. A package according to claim 1, wherein said cover hermetically seals said semiconductor die.
9. A package according to claim 1, wherein said substrate is comprised of AlN.
10. A package according to claim 1, further comprising at two more terminals disposed on said first surface of said substrate.
11. A package according to claim 1, wherein said semiconductor die is either a power MOSFET, an IGBT, or a power diode.
12. A package according to claim 1, wherein said at least one terminal is formed from tungsten.
13. A package according to claim 1, wherein said tungsten terminal is formed on said substrate by bulk metallization.
14. A semiconductor package comprising:
an AlN substrate;
a terminal on a surface of said substrate;
a semiconductor having at least one terminal electrically connected to said terminal; and
a cover disposed over and hermetically enclosing said semiconductor die.
15. A package according to claim 14, wherein said substrate includes a recess, said semiconductor die being disposed within said recess.
16. A package according to claim 14, wherein said substrate includes an opening extending from said first surface to said second surface, said opening including a mouth at said first surface and a mouth at said second surface, wherein said mouth at said second surface is closed by a second electrical terminal, and wherein said semiconductor die is disposed on said second terminal.
17. A package according to claim 16, wherein said die includes at least another electrode which is electrically and mechanically connected to said second terminal by a conductive adhesive.
18. A package according to claim 17, wherein said conductive adhesive is solder.
19. A package according to claim 14, wherein said cover includes an enclosure and a lid attached to said enclosure.
20. A package according to claim 19, wherein said is comprised of Kovar or Alloy 42.
21. A package according to claim 14, wherein said semiconductor die is a power MOSFET having a gate electrode and a source electrode on one surface thereof, and further comprising at two more terminals disposed on said first surface of said substrate, at least one of said terminals serving as a source sense terminal.
22. A package according to claim 14, wherein said semiconductor die is either a power MOSFET, an IGBT, or a power diode.
23. A package according to claim 14, wherein said terminal is formed from tungsten.
24. A package according to claim 23, wherein said tungsten terminal is formed on said substrate by bulk metallization.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method for determining the activity of a protease, said method comprising
a) incubating a mixture of said protease and a substrate capable of being bound to an anchor, said substrate having a fluorescent radical attached thereto;
b) binding the substrate to an anchor;
c) measure the fluorescence polarization of the mixture.
2. The method of claim 1 wherein the substrate is selected from compounds of Formula I
Z(W)mX(V)nY(I)
wherein X is an amino acid sequence sufficient for substrate recognition by a protease; wherein V and W are independently selected from aminoalkylcarboxylic acids; wherein m and n are numbers independently selected from 0 and 1; and wherein one of Y and Z is a fluorescent radical and the other is a binding radical.
3. The method of claim 2 wherein X is a peptide containing six to sixteen amino acids, inclusive; and wherein V and W are independently selected from glycine, 4-aminobutyric acid, 5-aminopentanoic acid, 6-aminocaproic acid and 7-aminoheptanoic acid.
4. The method of claim 3 wherein the anchor is selected from a biotin selective protein, a solid support, and an antibody; wherein the binding radical is selected from biotin, digoxigenin and radicals capable of binding to a solid support; and wherein the fluorescent radical is selected from derivatives of fluorescein, rhodamine, coumarin, eosin, pyrene, quinoline, DANSYL, dinitrophenyl, benzimidazole, DABCYL, EDANS, cascade blue, Texas red, acidine orange and BODIPY.
5. The method of claim 4 wherein the fluorescent radical is a fluorescein derivative.
6. The method of claim 5 wherein the biotin selective protein is avidin or streptavidin; wherein the binding radical is biotin; and wherein the fluorescent radical is DTAF.
7. The method of claim 1 wherein the proteases are viral proteases.
8. The method of claim 7 wherein the proteases are selected from HIV proteases and herpes proteases.
9. The method of claim 8 wherein the herpes viruses proteases are selected from HCMV proteases, MCMV proteases, HSV-1 proteases and HSV-2 proteases.
10. The method of claim 6 wherein the substrates are selected from biotin–Abu-Gly-Val-Val-Asn-Ala-Arg-Ser-Leu-Lys(DTAF)-NH2 SEQ ID NO:3 and biotin–Abu-Ser-Gln-Asn-Tyr-Pro-Ile-Val-Gln-Lys(DTAF)-NH2 SEQ ID NO:4.
11. A method for identifying compounds which inhibit a protease, said method comprising a) incubating a mixture of said protease, the compound, and a substrate having both a fluorescent radical and a radical capable of binding to an anchor; b) binding the substrate to the anchor; c) measure the fluorescence polarization of emitted light; and d) calculating the amount of protease inhibition.
12. A compound of Formula I
Z(W)mX(V)nY(I)
wherein X is an amino acid sequence sufficient for substrate recognition by a protease; wherein V and W are independently selected from aminoalkylcarboxylic acids; wherein m and n are numbers independently selected from 0 and 1; and wherein one of Y and Z is a fluorescent radical and the other is a binding radical.
13. The compound of claim 12 wherein X is a peptide containing six to sixteen amino acids, inclusive; wherein V and W are independently selected from glycine, 4-aminobutyric acid, 5-aminopentanoic acid, 6-aminocaproic acid and 7-aminoheptanoic acid; wherein the binding radical is biotin; and wherein the fluorescent radical is a fluorescein derivative.
14. The compound of claim 13 which is biotin–Abu-Gly-Val-Val-Asn-Ala-Arg-Ser-Leu-Lys(DTAF)-NH2 SEQ ID NO:3.
15. The compound of claim 13 which is biotin–Abu-Ser-Gln-Asn-Tyr-Pro-Ile-Val-Gln-Lys(DTAF)-NH2 SEQ ID NO:4.