1. An urn for storing cremains, said urn comprising:
an urn body, said urn body comprising:
a first side panel, said first side panel having a inside face facing the interior of said urn body;
a second side panel, said second side panel having an inside face facing the interior of said urn body;
a top portion, said top portion joined to the top of said urn body;
a bottom edge at the bottom of said urn body;
a back panel portion, said back panel portion adapted to fit with said urn body to form a third side of a box structure, wherein said first side panel and said second side panel define a first and second of said box structure;
a front panel portion, said front panel portion adapted to fit with said urn body to form a fourth side of a box structure, wherein said first side panel, said second side panel, and said back portion define a first, second, and third side, respectively, of said box structure; and
a base, said base adapted to fasten to the bottom of said urn body, said base adapted to capture said front panel portion when fastened to said urn body, whereby with said front panel and said base attached to said urn body, sad urn is a closed receptacle for storing said cremains;
wherein said first side panel comprises a first slot along its inside face, and wherein said second side panel comprises a second slot along its inside face, and wherein said first slot and said second slot are adapted to capture two opposing sides of said front panel portion.
2. The urn of claim 1 wherein said first side panel further comprises a third slot along its inside face, and wherein said second side panel further comprises a fourth slot along its inside face, and wherein said third slot and said fourth slot are adapted to capture two opposing sides of said back panel portion.
3. The urn of claim 1 wherein said first slot and said second slot extend to said bottom edge of said urn body.
4. The urn of claim 2 wherein said first slot and said second slot extend to said bottom edge of said urn body.
5. The urn of claim 4 wherein said third slot and said fourth slot extend to said bottom of said urn body.
6. The urn of claim 5 said top portion comprises slots along it bottom surface, and wherein said base comprises slots along its top surface, said slots adapted to capture the top and bottom of said front panel portion and said back panel portion.
7. The urn of claim 4 wherein said front panel portion is adapted to be removed from said urn by removing said base.
8. The urn of claim 4 wherein said front panel portion comprises an image.
9. The urn of claim 8 wherein said image is engraved on a surface of said front panel portion.
10. The urn of claim 9 wherein said image is laser engraved on a surface of said front panel portion.
11. The urn of claim 4 wherein said back panel portion is adapted to be removed from said urn by removing said base.
12. The urn of claim 11 wherein said back panel portion comprises an image.
13. The urn of claim 12 wherein said image is engraved on a surface of said back panel portion.
14. The urn of claim 13 wherein said image is laser engraved on a surface of said back panel portion.
15. The urn of claim 4 wherein said front panel portion comprises:
a first partial front panel;
a second partial front panel, wherein said second partial front panel comprises a clear material.
16. The urn of claim 15 wherein said first partial front panel and said second partial front panel are adapted to overlay each other.
17. The urn of claim 16 comprising a matte layer between said first partial front panel and said second partial front panel.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for manufacturing an integrated optical device comprising:
forming on a silicon substrate a silicon dioxide multilayer structure containing, in a first region, a waveguide core layer of the optical device, said core being provided with an electromagnetic radiation inletoutlet port;
forming, by an anisotropic etch, a trench in a second region of the multilayer structure adjacent said first region, said trench comprising side walls and a bottom wall spaced from said substrate;
forming a protective coating layer of said side walls and said bottom wall;
defining an opening in said bottom wall by at least partially removing the protective coating layer in order to expose a lower silicon dioxide portion of the multilayer structure; and
performing an isotropic etch through said opening in order to remove, starting from the exposed lower silicon dioxide portion, the multilayer structure silicon dioxide until a recess is formed in the multilayer structure having a first wall provided with at least one essentially planar portion inclined relative to the substrate, such inclined portion extending at least partially in said first region and including said inletoutlet port.
2. The process according to claim 1, wherein said inclined portion of the first wall comprises a core inletoutlet port surface inside the multilayer that is adapted to reflect the electromagnetic radiation enteringexiting said core.
3. The process according to claim 1, wherein said formation of the multilayer structure comprises formation, at least in part of said second region, of a silicon dioxide protective layer of the multilayer.
4. The process according to claim 3, wherein said protective layer is buried inside the multilayer silicon dioxide and spaced from the substrate in order to protect the lower silicon dioxide portion of the multilayer.
5. The process according to claim 4, wherein said protective layer comprises polycrystalline silicon having a thickness in the range between 0.5-3 \u03bcm.
6. The process according to claim 3, wherein said formation of the trench by anisotropic etching comprises the removal of the multilayer structure silicon oxide arranged above the protective layer until matching the trench bottom wall with said protective layer.
7. The process according to claim 1, wherein said formation of the protective coating layer comprises a deposition of a polysilicon hard mask protective layer having a thickness ranging between 0.5 \u03bcm -1.5 \u03bcm.
8. The process according to claim 1, wherein said removal of said protective coating layer from the trench bottom wall further comprises:
depositing, above the multilayer, a photosensitive polymeric material layer having a rigidity to be parallel to the substrate;
masking and etching said polymeric material layer in order to create a first opening passing in said material above the trench in order to put in communication the trench with the outside; and
sequentially selectively removing the protective coating layer and the lower protective layer from the trench bottom by using the polymeric material layer as a mask.
9. The process according to claim 8, wherein said first opening is defined by opposite ends of the polymeric material layer that project above the trench, so that a first distance between said opposite ends is lower than a second distance between the trench opposite vertical walls that are covered by the protective coating layer.
10. The process according to claim 8, wherein said selective removal of the protective coating layer and of the protective layer creates said opening.
11. The process according to claim 1, wherein said isotropic etch creates a recessed second wall opposite said first wall.
12. The process according to claim 1, wherein said anisotropic etching is a dry etch performed by plasma.
13. The process according to claim 1, wherein said isotropic etch comprises a wet etch performed by employing hydrofluoric acid-based solutions.
14. The process according to claim 11, wherein said planar inclined portions of the first and the second walls of the recess have an inclination (\u03b1) relative to the substrate given by:
sin(\u03b1)\u22661n
where n is the waveguide refractive index.
15. The process according to claim 14, wherein said inclination (\u03b1) of the planar inclined portions relative to the substrate is less than or equal to 43 degrees.
16. The process according to claim 11, wherein said first and second walls of the recess comprise concave portions.
17. The process according to claim 1, wherein said formation of the multilayer structure further comprises:
depositing a first silicon dioxide cladding layer including the protective layer above the substrate;
depositing the core layer above said first cladding layer, said core layer being silicon dioxide;
performing a photolithographic process of said core layer in order to obtain the layout of a waveguide core in said multilayer structure first region; and
covering said core by the second cladding layer, said second cladding layer being silicon dioxide doped with boron and phosphorous.
18. The process according to claim 17, wherein said core layer has a thickness of 3-4 \u03bcm, and it can be doped with phosphorous, nitrogen, nitrogen oxide, and alumina.
19. The process according to claim 17, wherein each of said first and second cladding layers has a thickness ranging between 13-17 \u03bcm and an equal refractive index.
20. A process for manufacturing an integrated optical device comprising:
forming on a substrate a silicon dioxide multilayer structure containing, in a first region, a waveguide core layer of the optical device, said core being provided with an electromagnetic radiation inletoutlet port;
forming, by a first etch, a trench in a second region of the multilayer structure adjacent said first region, said trench comprising side walls and a bottom wall spaced from said substrate;
forming a protective coating layer of said side walls and said bottom wall;
defining an opening in said bottom wall by at least partially removing the protective coating layer in order to expose a lower silicon dioxide portion of the multilayer structure; and
performing a second etch through said opening in order to remove, starting from the exposed lower silicon dioxide portion, the multilayer structure silicon dioxide until a recess is formed in the multilayer structure having a first wall provided with at least one essentially planar portion inclined relative to the substrate, such inclined portion extending at least partially in said first region and including said inletoutlet port.
21. A process for manufacturing an integrated optical device comprising:
forming on a substrate a silicon dioxide multilayer structure containing, in a first region, a waveguide core layer of the optical device, said core being provided with an electromagnetic radiation inletoutlet port;
forming a trench in a second region of the multilayer structure adjacent said first region, said trench comprising side walls and a bottom wall spaced from said substrate;
forming a protective coating layer of said side walls and said bottom wall;
defining an opening in said bottom wall by at least partially removing the protective coating layer in order to expose a lower silicon dioxide portion of the multilayer structure; and
removing, starting from the exposed lower silicon dioxide portion, the multilayer structure silicon dioxide until a recess is formed in the multilayer structure having a first wall provided with at least one essentially planar portion inclined relative to the substrate, such inclined portion extending at least partially in said first region and including said inletoutlet port.