1. A microfluidic device, comprising:
a layer, the layer including a plurality of microvascularized-sized fluidic channels, the plurality of microvascularized-sized fluidic channels being disposed in a geometric pattern; and
the layer being composed of a hydrogel.
2. The microfluidic device according to claim 1, further comprising:
at least another layer, the other layer being composed of the hydrogel.
3. The microfluidic device according to claim 2, wherein the other layer is a base layer, and the layer is disposed above the other layer.
4. The microfluidic device according to claim 2, further comprising:
a top layer composed of silicone elastomer; and
a second layer disposed between the top layer and the layer, the second layer being composed of a gelatin.
5. The microfluidic device according to claim 4, wherein the top layer is composed of polydimethylsiloxane (PDMS), and the top layer is silanized PDSM with amine groups disposed on a surface of the top layer.
6. The microfludidic device according to claim 1, wherein the hydrogel includes a mixture of agarose and gelatin.
7. The microfluidic device according to claim 2, wherein the hydrogel includes a mixture of agarose and gelatin.
8. The microfluidic device according to claim 1, wherein the channels include at least a first channel and a second channel, the first channel having different dimensions than the second channel.
9. The microfluidic device according to claim 8, wherein the first channel has a length that is longer than a length of the second channel.
10. The microfluidic device according to claim 8, wherein the first channel has a width that is larger than a width of the second channel.
11. A microfluidic device, comprising:
at least a first set of at least one microfluidic channel and a second set of at least one microfluidic channel, the first set being configured to have a shear rate that is higher than a shear rate of the second set; and
at least a first subchannel and a second subchannel, the first channel communicating with the first set and the second subchannel communicating with the second set,
wherein the first subchannel has a length that is shorter than a length of the second subchannel.
12. The device according to claim 11, further comprising:
at least a third set of at least one microfluidic channel, the third set being configured to have a shear rate that is between the first set and the second set; and
a third subchannel, the third subchannel having a length that is between the lengths of the first and second subchannels.
13. The device according to claim 11, wherein:
each set includes a plurality of microfluidic channels disposed in parallel; and
the plurality of microfluidic channels of each set merge into respective subchannel.
14. The device according to claim 13, wherein each of the plurality of microfluidic channels of the first set has dimensions that are substantially similar to dimensions of each of the plurality of microfluidic channels of the second set.
15. The device according to claim 11, wherein the first and second subchannels are respectively disposed between the first and second sets and an outlet.
16. The device according to claim 11, further comprising:
at least one layer, the layer includes the microfluidic channels and the subchannels.
17. The device according to claim 16, wherein the layer is composed of a hydrogel.
18. The device according to claim 17, further comprising:
a base layer, the base layer being composed of a hydrogel.
19. The device according to claim 16, wherein the layer is composed of a silicone elastomer.
20. The device according to claim 11, further comprising:
an inlet,
the first set of at least one microfluidic channel and the second set of at least one microfluidic channel being disposed between the inlet and respective subchannel.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a Te-containing chalcogenide layer, comprising:
radicalizing a first source that contains Te to form a radicalized Te source; and
forming a Te-containing chalcogenide layer by supplying the radicalized Te source into a reaction chamber.
2. The method of claim 1, wherein the first source is chemically expressed by at least one of Formulae 1 and 2:
R1\u2014Te\u2014R2\u2003\u2003Formula 1
where R1 and R2 are independently at least one of a C1-C10 alkyl group, a C2-C12 olefinic group, a C2-C13 acetylenic group, an allenic group (\u2014CHCCH2), a cyan group (\u2014CN), an \u2014NCX group (where X is O, S, Se, or Te), an azide ligand (N3), an amide ligand (NR3R4, where R3 and R4 are independently are an C1-C10 alkyl group, a C2-C12 olefinic group, a C2-C13 acetylenic group, or an allenic group).
3. The method of claim 1, wherein radicalizing the first source comprises heating the first source.
4. The method of claim 3, wherein heating the first source comprises passing the first source through a preheater before the radicalized Te source is supplied to the reaction chamber.
5. The method of claim 3, wherein a first source supply tube through which the first source is supplied is installed on an inner wall of the reaction chamber, and wherein the heating the first source comprises heating the first source simultaneously as the reaction chamber is heated.
6. The method of claim 3, wherein heating the first source comprises vaporizing the first source.
7. The method of claim 1, wherein forming the Te-containing chalcogenide layer is performed at a temperature between about 200\xb0 C. and about 300\xb0 C.
8. The method of claim 1, further comprising supplying a second source into the reaction chamber.
9. The method of claim 8, wherein the second source is at least one selected from the group consisting of a Ge source, an Sb source, a Bi source, an As source, a Sn source, an O source, a Au source, a Pd source, a Se source, a Ti source, and a S source.
10. The method of claim 8, wherein the Te-containing chalcogenide layer is formed of Ge\u2014Sb\u2014Te, Ge\u2014Bi\u2014Te, Ge\u2014Te\u2014As, Ge\u2014Te\u2014Sn, Ge\u2014Te, Ge\u2014Te\u2014Sn\u2014O, Ge\u2014Te\u2014Sn\u2014Au, Ge\u2014Te\u2014Sn\u2014Pd, Ge\u2014Te\u2014Se, Ge\u2014Te\u2014Ti, (Ge, Sn)\u2014Sb\u2014Te, Ge\u2014Sb\u2014(Se, Te), or Ge\u2014Sb\u2014Te\u2014S.
11. The method of claim 1, wherein the radicalized Te source is supplied to the reaction chamber together with a carrier gas.
12. The method of claim 1, wherein the radicalized Te source is supplied to the reaction chamber together with a carrier gas and a reaction gas.
13. The method of claim 1, further comprising purging physically adsorbed Te source and unreacted Te source by supplying an inert gas and a reaction gas into the reaction chamber after supplying the radicalized Te source into the reaction chamber.
14. A method of fabricating a phase change memory device comprising:
loading a substrate on which a lower electrode is formed into a reaction chamber;
radicalizing a first source that contains Te to form a radicalized Te source;
forming a phase change material film containing Te on the lower electrode by supplying the radicalized Te source into the reaction chamber; and
forming an upper electrode on the phase change material film.
15. The method of claim 14, wherein the first source is chemically expressed by at least one of Formulae 1 and 2:
R1\u2014Te\u2014R2\u2003\u2003Formula 1
where R1 and R2 are independently at least one of a C1-C10 alkyl group, a C2-C12 olefinic group, a C2-C13 acetylenic group, an allenic group (\u2014CHCCH2), a cyan group (\u2014CN), an \u2014NCX group (where X is O, S, Se, or Te), an azide ligand (N3), an amide ligand (NR3R4, where R3 and R4 are independently are an C1-C10 alkyl group, a C2-C12 olefinic group, a C2-C13 acetylenic group, or an allenic group).
16. The method of claim 14, further comprising forming a mold insulating film including a via hole that exposes a portion of the lower electrode before forming the phase change material film,
wherein the phase change material film is formed in the via hole.
17. The method of claim 14, wherein radicalizing the first source comprises heating the first source.
18. The method of claim 14, wherein forming the phase change material film containing Te is performed at a temperature between about 200\xb0 C. and about 300\xb0 C.
19. The method of claim 14, further comprising supplying a second source into the reaction chamber.
20. The method of claim 19, wherein the second source is at least one selected from the group consisting of a Ge source, an Sb source, a Bi source, an As source, a Sn source, an O source, a Au source, a Pd source, a Se source, a Ti source, and a S source.