What is claimed is:
1. A semiconductor device, comprising:
a lower layer including at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element;
a shielding film formed on said lower layer for shielding an energy beam used for detecting a positional detection mark; and
an upper layer including a positional detection mark formed on said shielding film.
2. The semiconductor device as recited in claim 1, wherein
said shielding film has a substantially flat upper surface.
3. The semiconductor device as recited in claim 1, wherein
said shielding film is a metal film.
4. The semiconductor device as recited in claim 3, wherein
said metal film is an aluminum film.
5. The semiconductor device as recited in claim 3, wherein
said metal film has a substantially flat upper surface.
6. The semiconductor device as recited in claim 1, wherein
said lower layer includes an insulating film, and
the positional detection mark included in said lower layer is a groove formed in said insulating film.
7. The semiconductor device as recited in claim 6, wherein
said upper layer includes an upper layer insulating film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer insulating film.
8. The semiconductor device as recited in claim 6, wherein
said upper layer includes an upper layer metal film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer metal film.
9. The semiconductor device as recited in claim 6, wherein
said shielding film is a metal film.
10. The semiconductor device as recited in claim 1, wherein
said lower layer includes a lower layer metal film, and
the positional detection mark included in said lower layer is a groove formed in said lower layer metal film.
11. The semiconductor device as recited in claim 10, wherein
said upper layer includes an upper layer insulating film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer insulating film.
12. The semiconductor device as recited in claim 10, wherein
said upper layer includes an upper layer metal film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer metal film.
13. The semiconductor device as recited in claim 1, wherein
said upper layer includes an upper layer insulating film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer insulating film.
14. The semiconductor device as recited in claim 1, wherein
said upper layer includes an upper layer metal film, and
the positional detection mark included in said upper layer is a groove formed in said upper layer metal film.
15. The semiconductor device as recited in claim 1, wherein
said positional detection mark is formed by a polysilicon film.
16. A semiconductor device, comprising:
a lower layer including at least one of a positional detection mark and a quality testing element;
an isolation insulating film formed on said lower layer; and
an upper layer formed on said isolation insulating film and including at least one selected from the group consisting of a quality testing element, an external electrode, and a dummy layer.
17. The semiconductor device as recited in claim 16, wherein
said lower layer includes an insulating film, and
the positional detection mark included in said lower layer is a groove formed in said insulating film.
18. The semiconductor device as recited in claim 16, wherein
said lower layer includes a metal film, and
the positional detection mark included in said lower layer is a groove formed in said metal film.
19. A method of manufacturing a semiconductor device, comprising the steps of:
forming a lower layer including at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element;
forming a shielding film for shielding an energy beam used for detecting a positional detection mark on said lower layer; and
forming an upper layer including a positional detection mark on said shielding film.
20. The method as recited in claim 19, further comprising the steps of:
forming an interlayer insulating film between said lower layer and said shielding film; and
planarizing an upper surface of said interlayer insulating film.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a GaN-based light emitting diode (LED) comprising:
preparing a GaN substrate;
sequentially forming an active layer and a p-type nitride semiconductor layer on a surface of the GaN substrate having Ga-polarity through an epitaxial growth method;
forming a p-electrode on the p-type nitride semiconductor layer;
forming a mask on a surface of the GaN substrate having N-polarity, the mask defining a surface-irregularity formation region;
wet-etching portions of the second surface of the GaN substrate having N-polarity by using the mask as an etching mask such that standardized surface irregularities are formed; and
forming an n-electrode on the GaN substrate having the surface irregularities formed thereon,
wherein the wet-etching of the GaN substrate is performed until an end of one surface of the GaN substrate to be formed by the wet-etching using the mask meets an end of another surface of the GaN substrate to be formed by the wet-etching using the mask, the another surface being adjacent to the one surface, and
wherein when the end of one surface of the GaN substrate to be formed by the wet-etching using the mask meets the end of another surface of the GaN substrate to be formed by the wet-etching using the mask, an angle of 60 to 70 degrees is formed between the adjacent surfaces of the GaN substrate.
2. The method according to claim 1,
wherein the mask is formed of one or more materials selected from the group of formed of photoresist, SiO2, SiN, Au, Cr, Ni, Pd, Pt, Cu, Ag, and Ti.
3. The method according to claim 1,
wherein the wet-etching is performed by using, as an etching solution, any one material selected from the group of a mixed solution, in which KOH and NaOH are mixed with H2O or ethylene glycol, H2SO4, and H3PO4.