1. An electric shaver comprising:
a plurality of outer blades which comprise a metal thin plate, have an elongated shape in a first direction and are arranged in a second direction perpendicular to the first direction;
a plurality of outer blade frames having an elongated shape in the first direction and to which the outer blades are respectively attached;
a plurality of inner blades which are reciprocally and linearly moved in the first direction to slide on inner faces of the outer blades, and are arranged in the second direction;
a driver that has a plurality of inner blade attaching bases protruding outward in a third direction perpendicular to both of the first direction and the second direction and that drives the inner blades reciprocally and linearly in the first direction;
an outer blade mounting base which is provided on a top portion of the driver and includes a pair of protrusions provided at positions near both ends of the outer blade mounting base in the first direction, said protrusions protrude upward in the third direction and are elongated in the second direction; and
a frame holder which is attached to the outer blade mounting base and has a pair of end walls arranged in parallel with the second direction and disposed inside of the protrusions of the outer blade mounting base in the first direction and a pair of engaging rims provided at both ends in the first direction that enclose and engage with the protrusions, when the frame holder is attached to the outer blade mounting base, wherein each of the end walls has a plurality of guide grooves elongated in the third direction to which the outer blade frames are engaged and hold the outer blade frames movable in the third direction.
2. The electric shaver in accordance with claim 1, wherein
each of the end walls has a height, in the third direction, substantially equal to a height of the protrusions, in the third direction and
the frame holder has a pair of engaging arms configured to protrude outward in the first direction and inward in the third direction from center portions of top faces of the end walls in the third direction so as to enclose the protrusions when the frame holder is attached to the outer blade mounting base.
3. The electric shaver in accordance with claim 2, wherein
each engaging arm crosses the engaging rim at a middle portion thereof and is integrally formed with the engaging rim.
4. The electric shaver in accordance with claim 2,
wherein a rigidity of the engaging arm is larger than a rigidity of the engaging rim.
5. The electric shaver in accordance with claim 2, wherein
a rigidity adjusting groove is provided on the engaging arm that adjusts the rigidity of the engaging arm.
6. The electric shaver in accordance with claim 5, wherein
a rigidity of the engaging arm is larger than a rigidity of the engaging rim.
7. The electric shaver in accordance with claim 2, wherein
the frame holder has engaging portions integrally formed with the engaging arms or the engaging rims to be fixed to a housing of the driving unit.
8. The electric shaver in accordance with claim 1, wherein
the electric shaver has a main body which is grippable by a user and a head portion which is swingable in at least one of the first direction and the second direction;
the head portion includes the driver and a swing mechanism which enables swinging of the head portion in at least one of the first direction and the second direction, a housing containing the driver and the swing mechanism and head cover attached to the housing;
the outer blade mounting base serves as a top cover of the housing;
each of the end walls has a height in the third direction, substantially equal to a height of the protrusions in the third direction;
the frame holder has a pair of engaging arms that protrude outward in the first direction and inward in the third direction from center portions of top faces of the end walls so as to enclose the protrusions when the frame holder is attached to the outer blade mounting base;
each the engaging arm crosses the engaging rim at a middle portion thereof and is integrally formed with the engaging rim; and
an end of each engaging arm, that protrudes inward in the third direction, serves as an engaging portion engageable with both of the head cover and the outer blade mounting base so that the head cover is attached to the housing via the frame holder.
9. The electric shaver in accordance with claim 3, wherein
rigidity of the engaging arm is larger than that of the engaging rim.
10. The electric shaver in accordance with claim 3, wherein
a rigidity adjusting groove is formed on the engaging arm adjusts the rigidity of the engaging arm.
11. The electric shaver in accordance with claim 10, wherein
a rigidity of the engaging arm is larger than a rigidity of the engaging rim.
12. The electric shaver in accordance with claim 3, wherein,
the frame holder has engaging portions integrally formed with the engaging arms or the engaging rims to be fixed to a housing of the driving unit.
13. The electric shaver in accordance with claim 1, wherein
a pair of the engaging rims are provided so as to protrude outward to bind an end of the rear side wall to an end of the front side wall at both ends of the frame holder in the first direction.
14. The electric shaver in accordance with claim 1, wherein an aperture is defined by each end wall of the frame holder and each engaging rim of the frame holder, the protrusions of the outer blade mounting base being engaged within the apertures.
15. The electric shaver according to claim 1, wherein the frame holder is attached to the outer blade mounting base such that the frame holder is positioned over the outer blade mounting base, the protrusions of the outer blade mounting base projecting upwardly, in the third direction, to be engaged by the engaging rims of the frame holder.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A nonvolatile memory device comprising:
a plurality of impurity regions that are formed in a substrate;
a first contact that is electrically connected to at least one of the impurity regions;
a second contact that is electrically connected to at least one of the impurity regions;
a first information storage portion that is formed at a first height from the substrate and electrically connected to the first contact;
a second information storage portion that is formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact; and
an insulating layer pattern that is interposed between the substrate and the first information storage portion and between the substrate and the second information storage portion,
wherein the insulating layer pattern comprises a protrusion that is defined by a trench formed in the insulating layer pattern,
wherein the first information storage portion is formed on the protrusion to expose side surfaces of the protrusion, and
wherein the second information storage portion is formed on a bottom surface of the trench.
2. The nonvolatile memory device of claim 1, wherein the first information storage portion is formed on a top surface of the protrusion and is not formed on the side surfaces of the protrusion.
3. The nonvolatile memory device of claim 1, further comprising a second bit line contact that electrically connects the second information storage portion and a bit line.
4. The nonvolatile memory device of claim 3, further comprising a first bit line contact that electrically connects the first information storage portion and the bit line.
5. The nonvolatile memory device of claim 1, further comprising:
insulating spacers that are formed on side surfaces of the first information storage portion and the side surfaces of the protrusion; and
a bit line that is electrically connected to the first information storage portion and the second information storage portion and that fills the trench.
6. The nonvolatile memory device of claim 5, wherein the insulating spacers overlap the second information storage portion.
7. The nonvolatile memory device of claim 1, further comprising a tunneling insulating layer that is conformally formed on the insulating layer pattern,
wherein the insulating layer pattern comprises the protrusion and the trench.
8. The nonvolatile memory device of claim 7,
wherein the first information storage portion and the second information storage portion respectively comprise a first tunnel barrier pattern and a second tunnel barrier pattern,
wherein the tunneling insulating layer formed on the top surface of the protrusion is the first tunnel barrier pattern, and
wherein the tunneling insulating layer formed on the bottom surface of the trench is the second tunnel barrier pattern.
9. The nonvolatile memory device of claim 7, further comprising a bit line that is electrically connected to the first information storage portion and the second information storage portion and that fills the trench,
wherein the tunneling insulating layer is disposed between the bit line and the insulating layer pattern.
10. The nonvolatile memory device of claim 1,
wherein the first contact comprises a first lower contact and a first upper contact,
wherein the first upper contact is on the first lower contact, and
wherein the first lower contact is at the same level as the second contact.
11. The nonvolatile memory device of claim 1, wherein the protrusion is shaped like an inverted quadrangular pyramid.
12. The nonvolatile memory device of claim 1, wherein each of the first information storage portion and the second information storage portion comprises a magnetic tunnel junction.
13. A nonvolatile memory device comprising:
a plurality of first information storage portions that are at a first height from a substrate and separated from each other along a first direction and a second direction that is different from the first direction; and
a plurality of second information storage portions formed at a second height from the substrate and that is different from the first height, the plurality of second information storage portions being arranged between the first information storage portions that are separated from each other,
wherein each of the first and second information storage portions comprises a magnetic tunnel junction,
wherein the first information storage portions are on a protrusion that is defined by a trench, and
wherein the second information storage portions are on a bottom surface of the trench.
14. The nonvolatile memory device of claim 13, wherein the first information storage portions and the second information storage portions are alternately arranged along the first direction and the second direction.
15. A nonvolatile memory device comprising:
a first information storage portion that includes a first magnetic tunnel junction and that is at a first height from a substrate;
a second information storage portion that includes a second magnetic tunnel junction and that is at a second height from the substrate, the second height being different from the first height; and
an insulating layer pattern that is interposed between the first information storage portion and the substrate and between the second information storage portion and the substrate,
wherein the insulating layer pattern comprises a protrusion defined by a trench in the insulating layer pattern,
wherein the first information storage portion is on the protrusion, and
wherein the second information storage portion is on a bottom surface of the trench.
16. The nonvolatile memory device of claim 15, wherein the first information storage portion is on a top surface of the protrusion and is not on the side surfaces of the protrusion.
17. The nonvolatile memory device of claim 15, further comprising:
insulating spacers which are on side surfaces of the first information storage portion and the side surfaces of the protrusion; and
a bit line which is electrically connected to the first information storage portion and the second information storage portion and fills the trench.
18. The nonvolatile memory device of claim 15, wherein the protrusion is shaped like an inverted quadrangular pyramid.
19. The nonvolatile memory device of claim 15, further comprising:
a first bit line contact that electrically connects the first information storage portion and a bit line; and
a second bit line contact that electrically connects the second information storage portion and the bit line.
20. The nonvolatile memory device of claim 15, further comprising a tunneling insulating layer conformally formed on the insulating layer pattern that includes the protrusion and the trench.
21. The nonvolatile memory device of claim 15, further comprising:
a first contact that is electrically connected to at least one of a plurality of impurity regions in the substrate and to the first information storage portion;
a second contact that is electrically connected to at least one of the plurality of impurity regions in the substrate and to the second information storage portion,
wherein the first contact comprises a first lower contact and a first upper contact,
wherein the first upper contact is on the first lower contact, and
wherein the first lower contact is at the same level as the second contact.