1. A sperm-linker-DNA complex comprising:
a) a sperm cell
b) at least one anti-sperm monoclonal antibody linker, wherein the anti-sperm monoclonal antibody linker does not inhibit fertilization, and wherein said monoclonal antibody linker specifically binds sperm cells; and
c) at least one DNA molecule;
wherein fertilization of an oocyte by the sperm-linker-DNA complex can effectuate fertilization of an oocyte and introduce the DNA molecule into the oocyte.
2. The sperm-linker-DNA complex of claim 1, wherein the DNA molecule is a gene.
3. The sperm-linker-DNA complex of claim 2, wherein the DNA molecule encodes an anti-sense RNA molecule to inhibit translation and production of a preselected protein.
4. The sperm-linker-DNA complex of claim 2, wherein the gene encodes a preselected protein.
5. The sperm-linker-DNA complex of claim 3, wherein the preselected protein is implicated in a disease.
6. The sperm-linker-DNA complex of claim 4, wherein the preselected protein has anti-inflammatory, antiviral or anticancer activity.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor memory device comprising:
a semiconductor substrate;
an insulator film formed on said substrate;
a ferroelectric capacitor having a bottom electrode, a ferroelectric film and a top electrode, which are sequentially stacked on said insulator film, said ferroelectric film being patterned on said bottom electrode having a predetermined pattern so as to have an area smaller than an area of said bottom electrode;
an interlayer insulation layer covering the ferroelectric capacitor; and
a hydrogen barrier film deposited on the interlayer insulation layer so that at least a top and side of said ferroelectric capacitor are enveloped via said interlayer insulation layer, wherein an extending portion of said hydrogen barrier film is at a level lower than said insulator film by a predetermined amount.
2. A semiconductor memory device comprising:
a semiconductor substrate;
a first insulator film formed on said substrate;
a ferroelectric capacitor having a bottom electrode, a ferroelectric film and a top electrode, which are sequentially stacked on said first insulator film, said ferroelectric film being patterned on said bottom electrode having a predetermined pattern so as to have an area smaller than an area of said bottom electrode;
a first interlayer insulation layer covering the ferroelectric capacitor;
a first hydrogen barrier film deposited on the first interlayer insulation layer so that at least a top and side of said ferroelectric capacitor are enveloped via said first interlayer insulation layer;
a second interlayer insulation layer covering said first hydrogen barrier film; and
a second hydrogen barrier film deposited on said second interlayer insulation layer, wherein said first and second hydrogen barrier films are disposed in a parallel plane.
3. A semiconductor memory device comprising:
a semiconductor substrate;
an insulator film formed on said substrate;
a ferroelectric capacitor having a bottom electrode, a ferroelectric film and a top electrode, which are sequentially stacked on said insulator film, said ferroelectric film being patterned on said bottom electrode having a predetermined pattern so as to have an area smaller than an area of said bottom electrode;
an interlayer insulation layer covering the ferroelectric capacitor;
a hydrogen barrier film deposited on the interlayer insulation layer so that at least a top and side of said ferroelectric capacitor are enveloped via said interlayer insulation layer; and
a protective film formed on said hydrogen barrier film for protecting against at least one of hydrogen gas and a halogen gas such that a surface of said top electrode and sides of said ferroelectric film and said bottom electrode are covered.
4. The semiconductor memory device as set forth in claim 3, wherein a surface of said top electrode and sides of said ferroelectric film and said bottom electrode are covered with a protective film for protecting against at least one of hydrogen gas and a halogen gas.
5. A semiconductor device comprising:
a semiconductor substrate;
an insulator film formed on said substrate;
a ferroelectric capacitor having a bottom electrode, a ferroelectric film and a top electrode, which are sequentially stacked on said insulator film, said ferroelectric film being patterned on said bottom electrode having a predetermined pattern so as to have an area smaller than an area of said bottom electrode; and
an interlayer insulation layer covering the ferroelectric capacitor, said interlayer insulation layer containing metal oxide material exhibiting hydrogen barrier characteristics.