1. A container-insertable anti-theft device, which comprises:
a main housing containing an electronic article surveillance marker, said main housing being waterproof; and
at least one elongated protrusion extending from said main housing, said elongated protrusion being flexible and having a length equal to at least the longest dimension of said main housing.
2. The container-insertable anti-theft device of claim 1 wherein said at least one elongated protrusion is at least two elongated protrusions.
3. The container-insertable anti-theft device of claim 1 wherein there is one elongated protrusion.
4. The container-insertable anti-theft device of claim 1 wherein there is one elongated protrusion and said one elongated protrusion has a proximal end connected to said main housing and has a distal end positioned away from said main housing, said distal end having at least two at least partially non-parallel segments extending therefrom away from said main housing.
5. The container-insertable anti-theft device of claim 4 wherein said elongated protrusion and said at least two segments are arranged in Y-shape.
6. The container-insertable anti-theft device of claim 4 wherein there are three segments.
7. The container-insertable anti-theft device of claim 6 wherein said three segments include one segment being a linear extension of and in the same plane as said one elongated protrusion.
8. The container-insertable anti-theft device of claim 1 wherein said elongated protrusion has a length equal to at least twice the longest dimension of said housing.
9. The container-insertable anti-theft device of claim 1 wherein there are at least four elongated protrusions extending from said main housing.
10. The container-insertable anti-theft device of claim 9 wherein said four elongated protrusions are symmetrically arranged to form a spider catch.
11. A container and container-insertable anti-theft device, which comprises:
a) a container for strong flowable material having a hollow main body, a pour orifice and a closure for said pour orifice, said container having a maximum internal diagonal dimension x; and,
b) a container-insertable anti-theft device that includes:
a main housing containing an electronic article surveillance marker, said main housing being waterproof and having a predetermined length y; and,
at least one elongated protrusion, said elongated protrusion being flexible and having a length, wherein the sum of the lengths y and y are greater than x, such that said container-insertable anti-theft device may be flexed and force-fitted into a maximum internal diagonal of said container, locking it therein so as to deter easy removal therefrom.
12. The container and container-insertable anti-theft device of claim 11 wherein said protrusion is at least two elongated protrusions.
13. The container and container-insertable anti-theft device of claim 11 wherein there is one elongated protrusion.
14. The container and container-insertable anti-theft device of claim 11 wherein there is one elongated protrusion and said one elongated protrusion has a proximal end connected to said main housing and has a distal end positioned away from said main housing, said distal end having at least two at least partially non-parallel segments extending therefrom away from said main housing.
15. The container and container-insertable anti-theft device of claim 14 wherein said elongated protrusion and said at least two segments are arranged in Y-shape.
16. The container and container-insertable anti-theft device of claim 14 wherein there are three segments.
17. The container and container-insertable anti-theft device of claim 16 wherein said three segments include one segment being a linear extension of and in the same plane as said one elongated protrusion.
18. The container and container-insertable anti-theft device of claim 10 wherein said elongated protrusion has a length equal to at least the longest dimension of said main housing.
19. The container and container-insertable anti-theft device of claim 11 wherein there are at least four elongated protrusions extending from said main housing.
20. The container and container-insertable anti-theft device of claim 19 wherein said four elongated protrusions are symmetrically arranged to form a spider catch.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A high-frequency switching transistor comprising:
a collector area, having a first conductivity type;
a first barrier area bordering on the collector area, the first barrier area having a second conductivity type which differs from the first conductivity type;
a semiconductor area adjacent to the first barrier area, the semiconductor area having a dopant concentration which is at least one of the group consisting of lower than a dopant concentration of the first barrier area and equal to zero;
a second barrier area adjacent to the semiconductor area, the second barrier area having the first conductivity type;
a base area adjacent to the second barrier area, the base area having the second conductivity type;
a third barrier area adjacent to the semiconductor area, the third barrier area having the second conductivity type and a higher dopant concentration than the semiconductor area; and
an emitter area adjacent to the third barrier area, which has the base area having the first conductivity type.
2. The high-frequency switching transistor according to claim 1, wherein a the first conductivity type comprises n-doped and the second conductivity type comprises p-doped.
3. The high-frequency switching transistor according to claim 1, wherein the second barrier area borders on the third barrier area or is disposed in a predetermined distance to the third barrier area.
4. The high-frequency switching transistor according to claim 3, wherein the predefined distance has a value of at most 20 \u03bcm.
5. The high-frequency switching transistor according to claim 1, wherein at least one of the group consisting of the first barrier area, the second barrier area and the third barrier area have a dopant concentration substantially between 1015 and 1018 dopant atoms per cm3.
6. The high-frequency switching transistor according to claim 5, wherein at least one of the group consisting of the first barrier area, the second barrier area and of the third barrier area have a dopant concentration substantially between 1016 and 1017 dopant atoms per cm3.
7. The high-frequency switching transistor according to claim 1, wherein the semiconductor area has a dopant concentration which is less than 1014 dopant atoms per cm3.
8. The high-frequency switching transistor according to claim 1, wherein at least one of the group consisting of the collector area, the base area and the emitter area have a dopant concentration which equal to or greater than 1019 dopant atoms per cm3.
9. The high-frequency switching transistor according to claim 1, wherein at least one of the group consisting of the first barrier area, the second barrier area and the third barrier area has a thickness which lies within a range of values substantially between 0.1 \u03bcm and 2 \u03bcm.
10. The high-frequency switching transistor according to claim 9, wherein at least one of the group consisting of the first barrier area, the second barrier area and the third barrier area has a thickness which lies within a range of values substantially between 0.2 \u03bcm and 1 \u03bcm.
11. The high-frequency switching transistor according to claim 1, wherein the base area and the emitter area are formed in a substrate and are disposed at least in part laterally adjacent to each other.
12. The high-frequency switching transistor according to claim 1, wherein the collector area and the emitter area are formed in a substrate and are at least in part vertically displaced with respect to one another.
13. The high-frequency switching transistor according to claim 12, wherein the semiconductor area has a thickness which lies within a range of values substantially between 4 \u03bcm and 10 \u03bcm.
14. The high-frequency switching transistor according to claim 13, wherein the semiconductor area has a thickness which lies within a range of values substantially between 5 \u03bcm and 8 \u03bcm.
15. The high-frequency switching transistor according to claim 13, wherein a boundary structure is disposed on the side of the semiconductor area, the second barrier area and the third barrier area, through which a lateral extension of the semiconductor area, the second barrier area and the third barrier area is defined.
16. The high-frequency switching transistor according to claim 15, wherein the boundary structure includes an isolating material.
17. The high-frequency switching transistor according to claim 15, wherein the lateral extension of the semiconductor area, the second barrier area and the third barrier area lies within a range of values substantially between 20 \u03bcm and 200 \u03bcm.
18. The high-frequency switching transistor according to claim 15, wherein the semiconductor area has a square base area, wherein the base area is disposed in parallel to a main area of the first barrier area and has a base area side edge which is maximally the lateral extension.
19. The high-frequency switching transistor according to claim 12, wherein the collector area is configured to be contacted electrically conductively via a contact point of a contacting structure, wherein the contact structure is disposed higher over the collector area than a boundary area between the second barrier area and the base area.
20. The high-frequency switching transistor according to claim 19, wherein the contacting structure comprises at least a portion of an isolating material.
21. High-frequency switching transistor according to claim 12, wherein the collector area is disposed on a substrate which comprises a semi-isolating material.
22. A high-frequency circuit, comprising:
a switch with a high-frequency switching transistor, the high-frequency switching transistor including a collector area having a first conductivity type, a first barrier area bordering on the collector area, the first barrier area having a second conductivity type which differs from the first conductivity type, a semiconductor area adjacent to the first barrier area, the semiconductor area having a dopant concentration which is at least one of the group consisting of lower than a dopant concentration of the first barrier area and equal to zero, a second barrier area adjacent to the semiconductor area, the second barrier area having the first conductivity type, a base area adjacent to the second barrier area, the base area having the second conductivity type, a third barrier area adjacent to the semiconductor area, the third barrier area having the second conductivity type and a higher dopant concentration than the semiconductor area, and an emitter area adjacent to the third barrier area, the base area having the first conductivity type; and
a control circuit, which is formed to open or close the switch depending on a control signal, wherein the control means is formed to apply a negative switching voltage between the base area and the emitter area for closing the switch.
23. The high-frequency circuit according to claim 22, wherein a circuit input can be coupled to a high-frequency source, wherein a voltage signal can be supplied from the high-frequency source, the voltage signal having has a high-frequency voltage amplitude and wherein the switching voltage is smaller or equal to half the high-frequency voltage amplitude.