1. A pluggable module for use with a cage that is adapted to receive modules of different widths, the pluggable module comprising:
a module body; and
a plurality of module connectors, wherein, when the pluggable module is received by the cage, each of the plurality of module connectors is connected with a corresponding board connector on a host board on which the cage is mounted; and
wherein the cage comprises a septum engagement mechanism for removably securing a septum, and wherein the module body comprises means for engaging with the septum engagement mechanism when the septum is removed and the pluggable module is received by the cage.
2. A pluggable module as recited in claim 1, wherein the module body comprises an optical transceiver.
3. A pluggable module as recited in claim 1, wherein each of two or more of the plurality of module connectors is adapted to receive power from the corresponding board connector.
4. A pluggable module as recited in claim 1, wherein the module body is adapted to be received by a chamber of the cage when all the removable septum that divides the chamber into laterally displaced subchamber is removed.
5. A cage for receiving pluggable modules of different widths and enabling the pluggable modules to be connected to connectors of a host board, the cage comprising:
a cage body that forms a chamber for receiving pluggable modules, the cage body having sidewalls, the cage body further defining an opening for receiving the pluggable modules;
a septum engagement mechanism that is adapted to removably secure a septum, wherein, when the septum is secured by the septum engagement mechanism, the septum subdivides the chamber into laterally displaced subchambers; and
a plurality of heat sinks, each being disposed over and corresponding to one of the laterally displaced subchambers and forming a top wall of said corresponding laterally displaced subchamber.
6. A cage as recited in claim 5, wherein each of the plurality of heat sinks is independently attached to the cage body and, when the corresponding laterally displaced subchambers receives a module, is capable of displacement in a direction perpendicular to a plane defined by the top wall.
7. A cage for receiving pluggable modules of different widths and enabling the pluggable modules to be connected to connectors of a host board, the cage comprising:
a cage body that forms a chamber for receiving pluggable modules, the cage body having sidewalls, the cage body further defining an opening for receiving the pluggable modules;
a septum engagement mechanism that is adapted to removably secure a septum, wherein, when the septum is secured by the septum engagement mechanism, the septum subdivides the chamber into laterally displaced subchambers; and
a heat sink that is attached to the cage body and defines a top wall of each of the laterally displaced subchambers.
8. A cage as recited in claim 7, wherein the heat sink is substantially rigidly attached to the cage body, the cage body comprising a plurality of leaf springs on a bottom wall opposite the top wall, wherein, when the chamber receives a pluggable module, at least one of the plurality of leaf springs biases the pluggable module against the heat sink.
9. A cage as recited in claim 8, wherein the plurality of leaf springs comprises a first leaf spring associated with a first of the laterally displaced subchambers and a second leaf spring associated with a second of the laterally displaced subchambers.
10. A cage as recited in claim 8, wherein at least a portion of the septum engagement mechanism is formed on the heat sink such that, when the septum is secured by the septum engagement mechanism, the septum is attached to the heat sink.
11. A cage as recited in claim 10, wherein the heat sink has defined thereon a longitudinal groove that constrains motion of the septum when the septum is received by or removed from the cage.
12. A septum for subdividing a chamber of a cage that receives pluggable modules, the septum comprising:
a septum body having:
a cage engagement mechanism that permits the septum to be removably secured by the cage; and
a first side and an opposite second side that, when the septum is received by the cage, define a wall of a first subchamber and a second subchamber, respectively, of the cage;
a first latching mechanism on the first side that is adapted to removably secure a pluggable module in the first subchamber; and
a second latching mechanism on the second side that is adapted to removable secure a plug able module in the second subchamber; and
means formed on the septum for permitting a user to selectively disengage the first latching mechanism so as to release a pluggable module from the first subchamber.
13. A heat sink for use with a cage that receives pluggable modules of different widths, the heat sink comprises:
a heat transfer surface that is adapted to contact a pluggable module when the pluggable module is received in a chamber of the cage, wherein the heat transfer surface defines a wall of the chamber when the heat sink is attached to the cage;
an attachment mechanism by which the heat sink can be attached to the cage;
a septum engagement mechanism that is adapted to removably engage a septum associated with the cage, wherein, when the septum is engaged by the septum engagement mechanism, the septum subdivides the chamber into laterally displaced subchambers, each adapted for receiving a pluggable module having a first width.
14. A heat sink as recited in claim 13, wherein, when the septum is removed from the septum engagement mechanism, the chamber of the cage is adapted to receive a pluggable module having a second width that is wider than the first width.
15. A cage for receiving pluggable modules of different widths and enabling the pluggable modules to be connected to connectors of a host board, the cage comprising:
a cage body that forms a chamber for receiving pluggable modules, the cage body having sidewalls, the cage body further defining an opening for receiving the pluggable modules;
a septum that, when positioned in the chamber, subdivides the chamber into laterally displaced subchambers;
a septum engagement mechanism that is adapted to removably secure the septum in the chamber; and
conductive fingers formed on the cage body and the septum adjacent to the opening, such that the conductive fingers contact a pluggable module when the pluggable module is received by the cage so as to reduce electromagnetic interference from the pluggable module.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-14. (canceled)
15. A method for manufacturing a semiconductor device, comprising the step of:
superposing a mounting member and a semiconductor element including an electrode part, the mounting member including:
an insulation member made of a material containing a resin;
an electrode-part-connection electrode provided in the insulation member; and
an external electrode provided in the insulation member and connected electrically with the electrode-part-connection electrode, and bonding the electrode part and the electrode-part-connection electrode so that the mounting member and the semiconductor element are integrated,
wherein
in the step, the electrode part is prepared so as to include a metal layer, the electrode-part-connection electrode is prepared so as to include a metal layer, and the metal layer of the electrode part and the metal layer of the electrode-part-connection electrode are connected by metal joint.
16. The method for manufacturing a semiconductor device according to claim 15, wherein
in the step, the insulation member is formed with a material containing a thermosetting resin in a non-cured state, and the mounting member and the semiconductor element that are superposed are subjected to heat and pressure so that the thermosetting resin is cured.
17. The method for manufacturing a semiconductor device according to claim 16, wherein the step further includes a sub-step of, after curing the thermosetting resin, heating the metal layer of the electrode part and the metal layer of the electrode-part-connection electrode using ultrasonic vibration.
18. The method for manufacturing a semiconductor device according to claim 15, wherein in the step, the metal layer of the electrode part and the metal layer of the electrode-part-connection electrode are formed with at least one kind of metal selected from the group consisting of noble metals and solder alloys.
19. The method for manufacturing a semiconductor device according to claim 16, wherein the step includes sub-steps of preparing a transfer carrier provided with a wiring pattern, superposing the transfer carrier provided with the wiring pattern and the insulation member so that the wiring pattern and the insulation member are brought into contact with each other, and removing only the transfer carrier from the insulation member, so that the electrode-part-connection electrode is formed on the insulation member.
20. The method for manufacturing a semiconductor device according to claim 16, wherein the step includes sub-steps of filling a conductive material inside the insulation member, providing the electrode-part-connection electrode on a surface of the insulation member on one side thereof, and providing the external electrode on the other surface of the insulation member on an opposite side thereof, so that the mounting member is formed.
21. The method for manufacturing a semiconductor device according to claim 20, wherein the step further includes sub-steps of preparing a plurality of sheet-like materials that are made of the material containing a thermosetting resin in a non-cured state, that have through holes, and that are to become the insulation member when they are laminated, filling a conductive material in the through holes, and laminating the sheet-like materials in a manner such that a wiring layer is arranged between the different sheet-like materials, so that the insulation member filled with the conductive material is prepared.
22. The method for manufacturing a semiconductor device according to claim 15, further comprising a step of processing the semiconductor element so that the semiconductor element has a thickness of not less than 30 \u03bcm and not more than 100 \u03bcm, the processing step being carried out after the mounting and bonding step.
23. The method for manufacturing a semiconductor device according to claim 16, wherein the material containing a thermosetting resin in a non-cured state contains 75 wt % to 91 wt % of an inorganic filler, and 9 wt % to 25 wt % of a resin composition containing a thermosetting resin.
24. The method for manufacturing a semiconductor device according to claim 23, wherein the thermosetting resin contains at least one kind of resin selected from the group consisting of epoxy resins, phenol resins, cyanate resins, and thermosetting polyimide.
25. The method for manufacturing a semiconductor device according to claim 24, wherein in the case where the material containing the thermosetting resin in a non-cured state does not contain thermosetting polyimide, the material containing the thermosetting resin in a non-cured state contains a thermosetting resin with a glass transition temperature of not higher than 150\xb0 C.
26. A method for manufacturing a semiconductor device, comprising the steps of:
(a) superposing a mounting member and a semiconductor element material including a plurality of semiconductor elements having electrode parts, the mounting member including:
an insulation member made of a material containing a resin;
a plurality of sets of electrode-part-connection electrodes provided on a surface of the insulation member on one side thereof; and
a plurality of sets of external electrodes provided on a surface of the insulation member on an opposite side thereof,
wherein the electrode-part-connection electrodes and the external electrodes are connected electrically with each other,
and bonding the electrode parts and the electrode-part-connection electrodes, so that the mounting member and the semiconductor element material are integrated; and
(b) cutting the semiconductor element material and the mounting member together so that the individual semiconductor elements are separated from one another, the step (b) being carried out after the step (a),
wherein
in the step (a), the electrode parts are prepared so as to include metal layers, the electrode-part-connection electrodes are prepared so as to include metal layers, and the metal layers of the electrode parts and the metal layers of the electrode-part-connection electrodes are connected by metal joint.
27. The method for manufacturing a semiconductor device according to claim 26, wherein
in the step (a), the insulation member is formed with a material containing a thermosetting resin in a non-cured state, and the mounting member and the semiconductor element material that are superposed are subjected to heat and pressure so that the thermosetting resin is cured.
28. The method for manufacturing a semiconductor device according to claim 27, wherein the step (a) further includes a sub-step of, after curing the thermosetting resin, heating the metal layers of the electrode parts and the metal layers of the electrode-part-connection electrodes using ultrasonic vibration.
29. The method for manufacturing a semiconductor device according to claim 26, further comprising a step of processing the semiconductor elements so that the semiconductor elements have a thickness of not less than 30 \u03bcm and not more than 100 \u03bcm each, the step being carried out after the step (a) and prior to the step (b).
30. The method for manufacturing a semiconductor device according to claim 26, wherein in the step (a), the metal layers of the electrode parts and the metal layers of the electrode-part-connection electrodes are formed with at least one kind of metal selected from the group consisting of noble metals and solder alloys.
31. The method for manufacturing a semiconductor device according to claim 27, wherein the step (a) includes sub-steps of preparing a transfer carrier provided with a wiring pattern, superposing the transfer carrier provided with the wiring pattern and the insulation member so that the wiring pattern and the insulation member are brought into contact with each other, and removing only the transfer carrier from the insulation member, so that the electrode-part-connection electrodes are formed on the insulation member.
32. The method for manufacturing a semiconductor device according to claim 27, wherein the step (a) further includes sub-steps of preparing a plurality of sheet-like materials that are made of the material containing a thermosetting resin in a non-cured state, that have through holes, and that are to become the insulation member when they are laminated, filling a conductive material in the through holes, and laminating the sheet-like materials in a manner such that a wiring layer is arranged between the different sheet-like materials, so that the insulation member filled with the conductive material is prepared.
33. The method for manufacturing a semiconductor device according to claim 27, wherein the material containing a thermosetting resin in a non-cured state contains 75 wt % to 91 wt % of an inorganic filler, and 9 wt % to 25 wt % of a resin composition containing a thermosetting resin.
34. The method for manufacturing a semiconductor device according to claim 33, wherein the thermosetting resin contains at least one kind of resin selected from the group consisting of epoxy resins, phenol resins, cyanate resins, and thermosetting polyimide.
35. The method for manufacturing a semiconductor device according to claim 34, wherein in the case where the material containing the thermosetting resin in a non-cured state does not contain thermosetting polyimide, the material containing the thermosetting resin in a non-cured state contains a thermosetting resin with a glass transition temperature of not higher than 150\xb0 C.