1. A substrate processing apparatus comprising:
a substrate mounting portion provided in a process chamber and capable of mounting a plurality of substrates in a circumferential direction;
a rotating mechanism that rotates the substrate mounting portion at a predetermined angular velocity;
dividing structures provided in a radial form from a center of a lid of the process chamber so as to divide the process chamber into a plurality of areas; and
gas supply areas disposed between adjacent dividing structures, wherein
an angle between the adjacent dividing structures with one gas supply area interposed is set to an angle corresponding to the angular velocity and a period in which a portion of the substrate mounting portion passes through the gas supply area.
2. The substrate processing apparatus according to claim 1, wherein
a gas introduction mechanism is provided in each of the gas supply areas,
the gas introduction mechanism includes an upstream-side introduction mechanism connected to a gas supply pipe and a downstream-side introduction mechanism that has a gas injection hole, and
the upstream-side introduction mechanism and the downstream-side introduction mechanism being either separated or not separated.
3. The substrate processing apparatus according to claim 2, wherein
a gas guiding unit formed in a radial form is connected to the gas introduction mechanism, and the gas guiding unit is fixed to the lid.
4. The substrate processing apparatus according to claim 2, wherein
the downstream-side introduction mechanism is fixed to the lid.
5. The substrate processing apparatus according to claim 1, wherein
the lid being either separated or not separated from a process chamber wall of the process chamber.
6. The substrate processing apparatus according to claim 5, wherein
a gas introduction mechanism is provided in each of the gas supply areas,
the gas introduction mechanism includes an upstream-side introduction mechanism connected to a gas supply pipe and a downstream-side introduction mechanism that has a gas injection hole, and
the upstream-side introduction mechanism and the downstream-side introduction mechanism being either separated or not separated.
7. A substrate processing apparatus comprising:
a substrate mounting portion provided in a process chamber and capable of mounting a plurality of substrates in a circumferential direction;
a rotating mechanism that rotates the substrate mounting portion;
dividing structures provided in a radial form from a center of a lid of the process chamber so as to divide the process chamber into a plurality of areas; and
gas supply areas disposed between the adjacent dividing structures, wherein
an angle between the adjacent dividing structures with one gas supply area interposed is set to an angle that is proportional to periods in which a portion of the substrate mounting portion passes through the gas supply areas.
8. The substrate processing apparatus according to claim 7, wherein
the periods in which the portion of the substrate mounting portion passes through the gas supply areas are different.
9. The substrate processing apparatus according to claim 8, wherein
the lid being either separated from or not separated from a process chamber wall of the process chamber.
10. The substrate processing apparatus according to claim 9, wherein
a gas introduction mechanism is provided in each of the gas supply areas,
the gas introduction mechanism includes an upstream-side introduction mechanism connected to a gas supply pipe and a downstream-side introduction mechanism that has a gas injection hole, and
the upstream-side introduction mechanism and the downstream-side introduction mechanism being either separated or not separated.
11. The substrate processing apparatus according to claim 7, wherein
the lid can be separated from a process chamber wall of the process chamber.
12. The substrate processing apparatus according to claim 11, wherein
a gas introduction mechanism is provided in each of the gas supply areas,
the gas introduction mechanism includes an upstream-side introduction mechanism connected to a gas supply pipe and a downstream-side introduction mechanism that has a gas injection hole, and
the upstream-side introduction mechanism and the downstream-side introduction mechanism being either separated or not separated.
13. The substrate processing apparatus according to claim 7, wherein
a gas introduction mechanism is provided in each of the gas supply areas,
the gas introduction mechanism includes an upstream-side introduction mechanism connected to a gas supply pipe and a downstream-side introduction mechanism that has a gas injection hole, and
the upstream-side introduction mechanism and the downstream-side introduction mechanism being either separated or not separated.
14. A method of manufacturing a semiconductor device, comprising:
loading a plurality of substrates into a process chamber which includes processing areas divided by dividing structures provided in a radial form from a center of a lid of the process chamber and a rotatable substrate mounting portion on which the plurality of substrates is mounted, in which an angle between the adjacent dividing structures with one gas supply area interposed is set to an angle corresponding to the angular velocity and a period in which a portion of the substrate mounting portion passes through the gas supply area;
placing the plurality of substrates on the substrate mounting portion;
supplying gas to the processing areas while rotating the substrate mounting portion; and
unloading the substrate from the process chamber.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A power amplifying device that amplifies a modulation signal containing an amplitude modulation component and a phase modulation component, comprising:
a radio frequency amplifier that amplifies said modulation signal and outputs the resultant signal;
a linear amplifying section that adds an output voltage to a power supply voltage supplied to said radio frequency amplifier and negatively feeds back the power supply voltage supplied to said radio frequency amplifier such that the power supply voltage matches the amplitude modulation component of said modulation signal with a predetermined ratio;
a control signal generation section that detects a direction in which an output current of said linear amplifying section flows and generates a pulse modulation signal according to the direction of the current;
a switching amplifying section that controls connection and disconnection of a DC current based on said pulse modulation signal as a control signal so as to perform switching amplification for an output signal of said linear amplifying section and to supply the resultant signal as said power supply voltage to said radio frequency amplifier; and
a DC power supply that supplies said DC current to said switching amplifying section.
2. A power amplifying device that amplifies a modulation signal containing an amplitude modulation component and a phase modulation component, comprising:
a radio frequency amplifier that amplifies the phase modulation component of said modulation signal and outputs the resultant signal;
a linear amplifying section that adds an output voltage to a power supply voltage supplied to said radio frequency amplifier and negatively feeds back the power supply voltage supplied to said radio frequency amplifier such that the power supply voltage matches the amplitude modulation component of said modulation signal with a predetermined ratio;
a control signal generation section that detects a direction in which an output current of said linear amplifying section flows and generates a pulse modulation signal according to the direction of the current;
a switching amplifying section that controls connection and disconnection of a DC current based on said pulse modulation signal as a control signal so as to perform switching amplification for an output signal of said linear amplifying section and to supply the resultant signal as said power supply voltage to said radio frequency amplifier; and
a DC power supply that supplies said DC current to said switching amplifying section.
3. The power amplifying device according to claim 1,
wherein said switching amplification section, includes:
at least one switching device that is controlled based on said pulse modulation signal; and
a filter device including at least one inductor that smoothens an output signal of said switching device.
4. The power amplifying device according claim 1,
wherein said control signal generation section includes:
a current detection resistor in which an output current of said linear amplifying section flows; and
a hysteresis comparator that determines the direction of the output current of said linear amplifying section based on a voltage generated on both ends of said current detection resistor and outputs the determined result as a pulse modulation signal.
5. The power amplifying device according to claim 2,
wherein said switching amplification section, includes:
at least one switching device that is controlled based on said pulse modulation signal; and
a filter device including at least one inductor that smoothens an output signal of said switching device.
6. The power amplifying device according to claim 2,
wherein said control signal generation section includes:
a current detection resistor in which an output current of said linear amplifying section flows; and
a hysteresis comparator that determines the direction of the output current of said linear amplifying section based on a voltage generated on both ends of said current detection resistor and outputs the determined result as a pulse modulation signal.