What is claimed is:
1. A method of manufacturing a semiconductor device, said method comprising the steps of:
forming a source region, a drain region and a channel forming region in a crystalline semiconductor film over a substrate;
forming at least one impurity region locally in said channel forming region; and
forming a gate insulating film and a gate electrode over said channel forming region;
wherein impurity elements added to said impurity region in said channel region shift an energy band width (Eg).
2. A method according to claim 1, wherein regions other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
3. A method according to claim 1, wherein assuming that rates of said impurity regions and a width between said impurity regions with respect to a width W of said channel forming region are Wpi and Wpa, respectively, relational expressions of WpiW0.1 to 0.9, WpaW0.1 to 0.9 and WpiWpa{fraction (19)} to 9 are accomplished between W, Wpi and Wpa.
4. A method according to claim 1, wherein at least one section perpendicular to a channel direction of said channel forming region is substantially regarded as an assembly of a plurality of channel forming regions which are sectioned by said impurity regions.
5. A method according to claim 1, wherein said impurity regions are arranged at intervals of 100 to 3000 in said channel forming region.
6. A method according to claim 1, wherein said impurity elements are elements of group XIII or XV.
7. A method according to claim 7, wherein the elements of group XIII are boron, and the elements of group XV are one of phosphorus and arsenic.
8. A method according to claim 1, wherein said impurity regions are in a dot pattern.
9. A method according to claim 1, wherein a concentration of said impurity elements in said impurity regions is 11017 to 11020 atomscm3.
10. A method of manufacturing a semiconductor device, said method comprising the steps of:
forming a source region, a drain region and a channel forming region in a crystalline semiconductor film over a substrate;
forming a gate insulating film and a gate electrode over said channel forming region; and
locally adding impurity elements that shift an energy band width (Eg) to said channel forming region, in order to form at least one impurity region which pins a depletion layer that expands from said drain region toward said channel forming region and said source region.
11. A method according to claim 10, wherein regions other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
12. A method according to claim 10, wherein assuming that rates of said impurity regions and a width between said impurity regions with respect to a width W of said channel forming region are Wpi and Wpa, respectively, relational expressions of WpiW0.1 to 0.9, WpaW0.1 to 0.9 and WpiWpa{fraction (19)} to 9 are accomplished between W, Wpi and Wpa.
13. A method according to claim 10, wherein at least one section perpendicular to a channel direction of said channel forming region is substantially regarded as an assembly of a plurality of channel forming regions which are sectioned by said impurity regions.
14. A method according to claim 10, wherein said impurity regions are arranged at intervals of 100 to 3000 in said channel forming region.
15. A method according to claim 10, wherein said impurity elements are elements of group XIII or XV.
16. A method according to claim 15, wherein the elements of group XIII are boron, and the elements of group XV are one of phosphorus and arsenic.
17. A method according to claim 10, wherein said impurity regions are in a dot pattern.
18. A method according to claim 10, wherein a concentration of said impurity elements in said impurity regions is 11017 to 11020 atomscm3.
19. A method of manufacturing a semiconductor device, said method comprising the steps of:
forming a source region, a drain region and a channel forming region in a crystalline semiconductor film over a substrate;
forming a gate insulating film and a gate electrode over said channel forming region; and
locally adding impurity elements that shift an energy band width (Eg) to said channel forming region, in order to form at least one impurity region,
wherein said impurity region in said channel forming region is formed in order to control to a predetermined threshold value voltage and control a path through which the carriers move.
20. A method according to claim 19, wherein said regions other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
21. A method according to claim 19, wherein assuming that rates of said impurity regions and a width between said impurity regions with respect to a width W of said channel forming region are Wpi and Wpa, respectively, relational expressions of WpiW0.1 to 0.9, WpaW0.1 to 0.9 and WpiWpa{fraction (19)} to 9 are accomplished between W, Wpi and Wpa.
22. A method according to claim 19, wherein at least one section perpendicular to a channel direction of said channel forming region is substantially regarded as an assembly of a plurality of channel forming regions which are sectioned by said impurity regions.
23. A method according to claim 19, wherein said impurity regions are arranged at intervals of 100 to 3000 in said channel forming region.
24. A method according to claim 19, wherein said impurity elements are elements of group XIII or XV.
25. A method according to claim 24, wherein the elements of group XIII are boron, and the elements of group XV are one of phosphorus and arsenic.
26. A method according to claim 19, wherein said impurity regions are in a dot pattern.
27. A method according to claim 19, wherein a concentration of said impurity elements in said impurity regions is 11017 to 11020 atomscm3.
28. A method of manufacturing a semiconductor device, said method comprising the steps of:
forming a source region, a drain region and a channel forming region in a crystalline semiconductor film over a substrate; and
locally forming at least one impurity region by addition of impurity elements that shift an energy band width (Eg) in said channel forming region; and
forming a gate insulating film and a gate electrode formed over said channel forming region;
wherein said impurity region has an insulating property; and
wherein regions other than said impurity region in said channel forming region are not added with said impurity elements.
29. A method according to claim 28, wherein a region other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
30. A method according to claim 28, wherein said regions other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
31. A method according to claim 28, wherein assuming that rates of said impurity regions and a width between said impurity regions with respect to a width W of said channel forming region are Wpi and Wpa, respectively, relational expressions of WpiW0.1 to 0.9, WpaW0.1 to 0.9 and WpiWpa{fraction (19)} to 9 are accomplished between W, Wpi and Wpa.
32. A method according to claim 28, wherein at least one section perpendicular to a channel direction of said channel forming region is substantially regarded as an assembly of a plurality of channel forming regions which are sectioned by said impurity regions.
33. A method according to claim 28, wherein said impurity regions are arranged at intervals of 100 to 3000 in said channel forming region.
34. A method according to claim 28, wherein said impurity elements are elements of group XIII or XV.
35. A method according to claim 34, wherein the elements of group XIII are boron, and the elements of group XV are one of phosphorus and arsenic.
36. A method according to claim 28, wherein said impurity regions are in a dot pattern.
37. A method according to claim 28, wherein a concentration of said impurity elements in said impurity regions is 11017 to 11020 atomscm3.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of delivering one or more goods or services via a medium, comprising:
issuing an encoded medium in an inactive state, the encoded medium identifying goods andor services that may be received by a holder of the medium;
assigning the encoded medium to one or more assignees;
generating data in a database associated with a central computing station in response to the assignee communicatively linking the encoded medium with the central computing station, wherein the data generated in the database identifies the assignments, the identity of the assignees, and the identity of goods andor services identified by the medium assigned;
generating data in the database associated with the central computing station in response to a provider of goods or services communicatively linking the encoded medium with the central computing station, wherein the data generated in the database identifies the goods andor services provided;
establishing a value for the medium, wherein the medium assumes different values based on various conditions;
updating the value of the medium and recording the updated value in the database in response to the provider of goods or services providing goods andor services to the holder of the medium.
2. The method of claim 1 wherein the value of the medium is a function of time, user activity, or geography.
3. The method of claim 2 wherein the value of the medium varies with the manner of activation.
4. The method of claim 3 wherein the value of the medium is established at one value when activation is made via telephone, a second value when activation is made via the global network, or a third value when activation is made by responding via mail or other carrier.
5. The method of claim 1 wherein the value of the medium is a function of the transaction entered into between the holder and the provider.
6. The method of claim 1 wherein the value of the medium is a function of the identity of the assignee.
7. The method of claim 1 wherein the value of the medium is a function of a referral.