1. A microelectronic package comprising:
(a) at least one lower chip;
(b) a connecting element extending above said at least one lower chip and extending in at least one horizontal direction beyond said at least one lower chip;
(c) a bottom plane element defining at least a portion of a bottom surface of the package below said at least one lower chip and including a plurality of terminals exposed at said bottom surface and a thermal conductor exposed at said bottom surface, said thermal conductor having area larger than the area of each of said terminals, said thermal conductor being at least partially aligned with said at least one lower chip, at least some of said terminals being electrically connected to at least some of said contacts of said at least one lower chip by said connecting element, said terminals including a plurality of active terminals, and a plurality of active leads projecting upwardly from said active terminals to said connecting element.
2. A package as claimed in claim 1 wherein said connecting element includes at least one dielectric layer and conductive traces extending along said at least one dielectric layer, at least some of said terminals being connected to at least some of said contacts of said least one lower chip by said traces.
3. A package as claimed in claim 1 wherein said active leads are formed integrally with said active terminals.
4. A package as claimed in claim 3 wherein said active leads are thicker than said traces.
5. A package as claimed in claim 1 wherein said bottom plane element includes one or more ground busses substantially coplanar with said thermal conductor.
6. A package as claimed in claim 3 further comprising ground leads formed integrally with said ground busses projecting upwardly from said ground busses to said connecting element.
7. A package as claimed in claim 5 wherein said ground buses are spaced laterally from said thermal conductor and said bottom plane element includes ground struts extending between said thermal conductor and said ground busses.
8. A package as claimed in claim 3 wherein said thermal conductor has a plurality of edges, said one or more ground busses extending alongside one or more edges of said thermal conductor, said active contacts being disposed in one or more rows alongside one or more other edges of said thermal conductor.
9. A microelectronic package comprising:
(a) a connecting element including a dielectric element and traces extending along said dielectric element, said connecting element having top and bottom surfaces;
(b) at least one lower chip mounted to said bottom surface of said connecting element, said at least one lower chip having a surface remote from said connecting element defining a lower datum at a level below said connecting element;
(c) a plurality of active terminals disposed at or below said lower datum; and
(d) a plurality of active leads in the form of elongated strips extending between said active terminals and said connecting element, said active leads being connected to at least some of said traces, at least some of said active leads being thicker than said traces.
10. A package as claimed in claim 9 further comprising a mass of encapsulant covering said connecting element and said at least one lower chip, said active leads being embedded in said encapsulant.
11. A package as claimed in claim 10 wherein said mass of encapsulant defines a bottom surface at or below said lower datum, said active terminals being exposed at said bottom surface of the mass.
12. A package as claimed in claim 11 wherein said mass of encapsulant defines edge surfaces extending upwardly from said bottom surface, said active terminals being disposed at said edge surfaces.
13. A package as claimed in claim 9 further comprising at least one upper chip mounted to said top surface of said connecting element.
14. A package as claimed in claim 9 wherein said traces are less than 40 \u03bcm thick and said active leads are at least 50 \u03bcm thick.
15. A package as claimed in claim 1 wherein said bottom plane element further includes a bottom plane dielectric layer, said terminals being attached to said bottom plane dielectric layer.
16. A package as claimed in claim 1 further comprising at least one upper chip mounted to said top surface of said connecting element.
17. A package as claimed in claim 16 wherein said at least one upper chip is an integrated passive chip including one or more passive components, and wherein said passive chip has horizontal dimensions smaller than the horizontal dimensions of said connecting element.
18. A package as claimed in claim 17 wherein said at least one lower chip is an active RF chip.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A modified asphalt binder composition prepared by:
combining asphalt binder, phosphorus pentasulfide, and less than 2.5 parts by weight unsaturated polymer, per 100 parts by weight asphalt binder, to thereby produce a modified asphalt binder composition characterized by an elongation recovery at 25\xb0 C., as determined according to AASHTO T301, of greater than 75%.
2. The composition of claim 1, where the binder composition is prepared by combining from about 0.05 to about 5 parts by weight phosphorus pentasulfide per 100 parts by weight asphalt binder.
3. The composition of claim 1, where the binder composition is characterized by an elongation recovery at 25\xb0 C., as determined according to AASHTO T301, of greater than 77%.
4. The composition of claim 1, where the binder composition is characterized by an elongation recovery at 25\xb0 C., as determined according to AASHTO T301, of greater than 80%.
5. The composition of claim 1, where the binder composition is prepared by combining less than 2.0 parts by weight unsaturated polymer per 100 parts by weight asphalt binder.
6. The composition of claim 1, where the binder composition is prepared by combining less than 1.8 parts by weight unsaturated polymer per 100 parts by weight asphalt binder.
7. The process of claim 1, where the polymer includes a block copolymer including at least one block including units deriving from the polymerization of conjugated diene monomer, and at least one block including units deriving from the polymerization of vinyl aromatic monomer.
8. An asphalt paving composition prepared by combining the modified asphalt binder composition of claim 1 with aggregate.
9. A road surface prepared from the asphalt paving composition of claim 3.
10. The process of claim 1, where the polymer and phosphorus pentasulfide are added simultaneously to the asphalt binder.
11. The process of claim 1, where the polymer and phosphorus pentasulfide are added sequentially to the molten asphalt binder.
12. The process of claim 1, where the weight ratio of polymer to phosphorus pentasulfide is at least 0.7:1 and less than 7:1.
13. The process of claim 7, where the weight ratio of polymer to phosphorus pentasulfide at least 1:1 and less than 6:1.
14. The process of claim 8, where the weight ratio of polymer to phosphorus pentasulfide is at least 1.3:1 and less than 5:1.
15. The process of claim 1, where the polymer is an unsaturated polymer including at least 5 non-conjugated double bonds per 100 carbon atoms in the polymer.
16. The process of claim 1, where the phosphorus pentasulfide is introduced to the asphalt binder by direct addition of the phosphorus pentasulfide to the asphalt.
17. A modified asphalt binder composition prepared by:
combining asphalt binder, phosphorus pentasulfide, and less than 2.5 parts by weight unsaturated polymer, per 100 parts by weight asphalt binder, to thereby produce a modified asphalt binder composition characterized by a phase angle at 76\xb0 C., as determined according to AASHTO T315, of less than 80\xb0.
18. The composition of claim 17, where the modified asphalt binder composition characterized by a phase angle at 76\xb0 C., as determined according to AASHTO T315, of less than 77\xb0.
19. The composition of claim 17, where the modified asphalt binder composition characterized by a phase angle at 76\xb0 C., as determined according to AASHTO T315, of less than 75\xb0.