1. Shielding element for electric andor electronic components of an electric andor electronic circuit, comprising:
an annular side wall (11) for surrounding those elements (25) of a circuit that have to be shielded against electromagnetic radiation, said side wall (11) defining a bottom and a ceiling opening (15), and
a cover (12, 12\u2032) for closing the ceiling opening (15), characterized, in that
said cover (12, 12\u2032) is detachable attached to said side wall (11) by joint means that comprises a predetermined breaking line and has to be destroyed for detaching said cover (12, 12\u2032) from said side wall (11), and
said predetermined breaking line is formed in an overlapping area of said cover (12, 12\u2032) and said side wall (11).
2. Shielding element as claimed in claim 1, characterized in that said cover (12\u2032) is provided with a peripheral flange (19) extending substantially perpendicular to its main surface and forming said portion for overlapping said annular side wall (11).
3. Shielding element as claimed in claim 2, characterized in that said annular side wall is provided with an annular flange (14) extending into said ceiling opening (15) and forming said portion to be overlapped by said cover (12).
4. Shielding element as claimed in claim 2, characterized in that said breaking line (26) is formed by spot-welding said cover (12, 12\u2032) to said annular side wall (11) in said overlapping area.
5. Shielding element as claimed in claim 2, characterized in that said breaking line (26) is formed by soldering said cover (12, 12\u2032) to said annular side wall (11) in said overlapping area.
6. Shielding element as claimed in claim 2, characterized in that said breaking line is formed by gluing said cover (12\u2032, 12) to said annular side wall (11) in said overlapping area.
7. Shielding element as claimed in claim 2, characterized in that said cover (12, 12\u2032) is provided with tear open means (16, 18) for removing said cover (12, 12\u2032) from said side wall (11) to open said ceiling opening (15).
8. Shielding element as claimed in claim 7, characterized in that said cover (12) is provided with a tongue (16) for engaging a tear open tool.
9. Shielding element as claimed in claim 8, characterized in that a tear off wire or strap (18) is integrated into said predetermined breaking line (26) formed by gluing.
10. Shielding element for electric andor electronic components of an electric andor electronic circuit, comprising:
an annular side wall (11) for surrounding those elements (25) of a circuit that have to be shielded against electromagnetic radiation, said side wall (11) defining a bottom and a ceiling opening (15), and
a cover (12) for closing the ceiling opening (15),
wherein
said annular side wall (11) and said cover (12) are defined as parts of an integral cap (23) by a predetermined breaking line (26),
characterized, in that
said predetermined breaking line (26) is formed by two parallel notches (21) andor perforations (29) to define a tear open strap (31).
11. Shielding element as claimed in claim 10, characterized in that said two parallel notches (21) are both formed in one surface of said cap (23).
12. Shielding element as claimed in claim 11, characterized in that said cover (12) is provided with an engaging element (27, 34), for being engaged by a tear open tool.
13. Shielding element as claimed in claim 11, characterized in that said engaging element is formed by a hole (27) for insert of a tear open tool.
14. Shielding element as claimed in claim 11, characterized in that said engaging element is formed by a tongue (34) defined by said predetermined breaking line or lines (26, 26\u2032).
15. Shielding element as claimed in claim 13, characterized in that said predetermined breaking line (26) is provided in a side wall portion (11) adjacent to an upper edge thereof.
16. Shielding element as claimed in claim 14, characterized in that said predetermined breaking line (26) is provided in cover (12) portion adjacent to its peripheral edge.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) exposing the substrate to a non-boron-containing reducing agent;
(c) exposing the substrate to a tungsten-containing precursor to form a portion of a tungsten nucleation layer;
(d) exposing the substrate to a boron-containing species to form a boron-containing layer on the substrate;
(e) contacting the boron-containing layer with a tungsten-containing precursor to form a portion of the tungsten nucleation layer; and
(f) depositing a bulk tungsten layer over the tungsten nucleation layer to form the tungsten film;
wherein the substrate temperature is maintained at about 450 C or less during steps (b)-(e).
2. The method of claim 1 further comprising repeating steps (b)-(e) at least one time to form the tungsten nucleation layer.
3. The method of claim 2 wherein steps (b)-(e) are repeated from 2-20 times.
4. The method of claim 2 wherein steps (b)-(e) are repeated from 2-5 times.
5. The method of claim 1 wherein the substrate temperature is maintained at about 350 C or less during steps (b)-(e).
6. The method of claim 1 wherein the non-boron-containing reducing agent is a silane.
7. The method of claim 1 further comprising a purge step between each reactive gas introduction.
8. The method of claim 1 further comprising exposing the substrate to a first dose of a tungsten-containing precursor prior to step (b).
9. The method of claim 8 further comprising exposing the substrate to a boron-containing species prior to the exposing the substrate to the first dose of a tungsten-containing precursor.
10. The method of claim 1 further comprising repeating steps (b) and (c) from 1-10 times prior to performing step (d).
11. A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) exposing the substrate to a flow comprising a non-boron-containing reducing agent and a boron-containing species to form a boron-containing layer on the substrate;
(c) contacting the boron-containing layer with a tungsten-containing precursor to form a portion of a tungsten nucleation layer;
(d) depositing a bulk tungsten layer over the tungsten nucleation layer to form the tungsten film.
12. The method of claim 11 further comprising repeating steps (b) and (c) at least one time to form the tungsten nucleation layer.
13. The method of claim 11 wherein steps (b) and (c) are repeated from 2-5 times.
14. The method of claim 11 wherein the substrate temperature ranges from about 200-450 C during steps (b) and (c).
15. The method of claim 14 wherein the substrate temperature ranges from about 275-350 C during steps (b) and (c).
16. The method of claim 11 wherein the non-boron-containing reducing agent is a silane.
17. The method of claim 11 wherein the ratio of the boron-containing species to the non-boron-containing reducing agent ranges from 0.1 to 5.
18. The method of claim 11 further comprising a purge step between each reactive gas introduction.
19. The method of claim 11 further comprising exposing the substrate to a first dose of a tungsten-containing precursor prior to step (b).
20. The method of claim 19 further comprising exposing the substrate to a boron-containing species prior to the exposing the substrate to the first dose of a tungsten-containing precursor.
21. A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) performing multiple pulse nucleation layer cycles at a temperature at or below about 350 C to form a portion of a tungsten nucleation layer;
(c) after step (b), performing a pulse nucleation layer cycle at a temperature at or greater than about 350 C to form a portion of the tungsten nucleation layer; and
(d) depositing a bulk tungsten layer over the tungsten nucleation layer to form the tungsten film.
22. The method of claim 21 wherein step (b) comprises performing between 3 and 20 pulse nucleation cycles.
23. The method of claim 21 wherein step (b) comprises performing the following steps from 3-6 times:
(e) exposing the substrate to a silane; and
(f) contacting the substrate with a tungsten-containing precursor.
24. The method of claim 21 wherein step (b) further comprises prior to step (e) performing the steps of:
(g) exposing the substrate to a boron-containing species to form a boron-containing layer; and
(h) contacting the boron-containing layer with a tungsten-containing precursor.
25. The method of claim 21 wherein step (c) is performed between 1 and ten times.
26. A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) exposing the substrate to a boron-containing species to form a boron-containing layer on the substrate;
(c) contacting the boron-containing layer with a tungsten-containing precursor to form a portion of a tungsten nucleation layer;
(d) exposing the substrate to a non-boron-containing reducing agent;
(e) exposing substrate to a tungsten-containing precursor to form a portion of the tungsten nucleation layer;
(f) repeating steps (d) and (e) at least one time to form a portion of the tungsten nucleation layer;
(g) after step (f), exposing the substrate to a boron-containing species to form a boron-containing layer on the substrate layer;
(h) contacting the boron-containing layer with a tungsten-containing precursor to form the tungsten nucleation layer; and
(i) depositing a bulk tungsten layer over the tungsten nucleation layer to form the tungsten film.
27. The method of claim 26 wherein the substrate temperature ranges from about 275-350 C during steps (b)-(e).
28. The method of claim 26 wherein the substrate temperature ranges from about 375-415 C during steps (g) and (h).
29. A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) exposing the substrate to a non-boron-containing reducing agent;
(c) exposing substrate to a tungsten-containing precursor to form a portion of the tungsten nucleation layer;
(d) after step (c), exposing the substrate to a boron-containing species to form a boron-containing layer on the substrate layer;
(e) contacting the boron-containing layer with a tungsten-containing precursor to form a portion of the tungsten nucleation layer;
(f) repeating steps (b)-(e) at least one time to form a portion of the tungsten nucleation layer;
(g) after step (f), exposing the substrate to a boron-containing species to form a boron-containing layer on the substrate layer;
(h) contacting the boron-containing layer with a tungsten-containing precursor to form the tungsten nucleation layer; and
(i) depositing a bulk tungsten layer over the tungsten nucleation layer to form the tungsten film.
30. (canceled)
31. The method of claim 26 further comprising:
(j) prior to step (g), exposing the substrate to a non-boron-containing reducing agent;
(k) exposing substrate to a tungsten-containing precursor to form a portion of the tungsten nucleation layer; and
(l) after step (h), repeating steps (j), (k), (g) and (h) at least one time.
32. The method of claim 26 further comprising repeating steps (b)-(i) at least one time to form a tungsten layer having reduced roughness and low resistivity.
33. The method of claim 32 wherein the portion of the film deposited in (i) is several hundred angstroms thick.
34. The method of claim 2 wherein the portion of the film deposited in (i) is about 500 angstroms.
35. A method of forming a tungsten film having reduced roughness and low resistivity on a substrate in a reaction chamber, the method comprising:
(a) positioning the substrate in a reaction chamber;
(b) performing multiple pulse nucleation layer cycles at a temperature at or below about 350 C to form a portion of a tungsten nucleation layer;
(c) after operation (b), performing a pulse nucleation layer cycle at a temperature at or greater than about 350 C to form a portion of the tungsten nucleation layer; and
(d) after operation (c), performing a chemical vapor deposition process to deposit a bulk tungsten layer over the tungsten nucleation layer to form a portion of the tungsten film, and
(e) repeating (b)-(d) at least once to form the tungsten film.
36. The method of claim 35 wherein the portion of the film deposited in (d) is several hundred angstroms thick.
37. The method of claim 35 wherein (d) is terminated after the bulk layer grows to about 500 angstroms.