What is claimed is:
1. A static memory cell array, comprising:
a plurality of cells comprising a first inverter cross-coupled to a second inverter connected in at least a first row by a first supply line connected to said first inverters and a second supply line connected to said second inverters and at least a first column connected in at least a first column by a third supply line connected to said first inverters and a fourth supply line connected to said second inverters.
2. The static memory cell array of claim 1, wherein said first inverters comprise a first NFET and a first PFET and said second inverters comprise a second NFET and a second PFET.
3. The static memory cell array of claim 1, wherein said plurality of cells is comprised only of said first inverters and said second inverters.
4. The static memory cell array of claim 1, wherein said first inverters have a first input node and a first output node and said second inverters have a second input node and a second output node and said first output node is only connected to said second input node and said second output node is only connected to said first input node.
5. The static memory cell array of claim 1, wherein said first supply line and said second supply line provide a positive supply voltage and said third supply line and said fourth supply line provide a negative supply voltage.
6. The static memory cell array of claim 1, wherein said first supply line and said second supply line provide a negative supply voltage and said third supply line and said fourth supply line provide a positive supply voltage.
7. An array of static memory cells, comprising:
two row-supply lines per row of cells, wherein said cells consist of a pair of cross-coupled inverters and each of said two row-supply lines supplies a separate one of said pair of cross-coupled inverters; and,
two column supply-lines per column of cells, wherein each of said two column-supply lines supplies a separate one of said cross-coupled inverters.
8. The array of static memory cells of claim 7, wherein said row-supply lines provide a positive supply voltage to said pair of cross-coupled inverters and said column-supply lines provide a negative supply voltage to said pair of cross-coupled inverters.
9. The array of static memory cells of claim 7, wherein said row-supply lines provide a negative supply voltage to said pair of cross-coupled inverters and said column-supply lines provide a positive supply voltage to said pair of cross-coupled inverters.
10. A memory array, comprising:
memory cells consisting of a first inverter having a first output, a first input, a first positive supply node, and a first negative supply node and a second inverter having a second output, a second input, a second positive supply node, and a second negative supply node wherein said first output is connected to said second input and said second output is connected to said first input;
and wherein said cells are connected in rows by said first positive supply node and said second positive supply node;
and wherein said cells are connected in columns by said first negative supply node and said second negative supply node.
11. A memory array, comprising:
memory cells consisting of a first inverter having a first output, a first input, a first positive supply node, and a first negative supply node and a second inverter having a second output, a second input, a second positive supply node, and a second negative supply node wherein said first output is connected to said second input and said second output is connected to said first input;
and wherein said cells are connected in columns by said first positive supply node and said second positive supply node;
and wherein said cells are connected in rows by said first negative supply node and said second negative supply node.
12. An array of four-transistor memory cells, comprising:
cells consisting of a first inverter comprised of a first two transistors and a second inverter comprised of a second two transistors wherein said are arranged in rows and columns;
and wherein said cells in each of said rows are connected to each other by a first supply line and second supply line and said first supply line and said second supply line for each of said rows are not connected to each other and not connected to any first supply lines of another row and not connected to any second supply lines of another row;
and wherein said cells in each of said columns are connected to each other by a third supply line and fourth supply line and said third supply line and said fourth supply line for each of said columns are not connected to each other and not connected to any third supply lines of another column and not connected to any fourth supply lines of another column.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A deicing composition comprising a mixture of:
a deicing agent; and
a corrosion inhibitor comprising at least one salt of an aldonic or aldaric acid chosen from salts of D-erythronic acid, D-gulonic acid, L-mannonic acid, and mixtures thereof,
wherein the deicing composition is capable of reducing corrosion of mild steel by at least about 70%, as compared to a 3% solution of sodium chloride devoid of the corrosion inhibitor,
wherein the corrosion inhibitor is present in an amount ranging from about 1.0% to about 3.0%, and
with the proviso that said deicing composition does not comprise molasses solids.
2. The deicing composition of claim 1, wherein the deicing agent is present in an amount ranging from about 20% to about 30% by weight.
3. The deicing composition of claim 1, wherein the deicing agent comprises a liquid deicing agent.
4. The deicing composition of claim 3, wherein the liquid deicing agent comprises a water solution of salts of sodium, magnesium, potassium, calcium, or mixtures thereof.
5. The deicing composition of claim 4, wherein the corrosion inhibitor is capable of reducing the corrosion rate of mild steel in an aqueous solution of 0.153 M sodium chloride by at least about 70% when the corrosion inhibitor is present in the solution at a concentration of 4.0 mM or lower.
6. A method of deicing, comprising
mixing a brine of a deicing agent with from about 1.0% to about 3.0% by weight of a corrosion inhibitor comprising at least one salt of an aldonic or aldaric acid, with the proviso that said brine does not contain molasses solids; and
applying said brine to a surface,
wherein the brine is capable of reducing corrosion of mild steel by at least about 70%. as compared to a 3% solution of sodium chloride devoid of the corrosion inhibitor.
7. The method of claim 6, wherein the brine comprises from about 20% to about 30% by weight the deicing agent.
8. The method of claim 6, further comprising prewetting a solid deicer with the combination of the brine and the corrosion inhibitor.
9. The deicing composition of claim 6, wherein the water solution of salts comprises calcium salts of sodium, magnesium, potassium, calcium, or mixtures thereof.
10. A liquid deicing composition, comprising an aqueous mixture of:
from about 20% to about 30% by weight relative to the total weight of the aqueous mixture of a deicing agent;
from about 1.5% to about 3.0% by weight relative to the total weight of the aqueous mixture of a corrosion inhibitor comprising at least one salt of an aldonic or aldaric acid; and
water,
wherein the liquid deicing composition is capable of reducing corrosion of mild steel by at least about 70%, as compared to a 3% solution of sodium chloride devoid of the corrosion inhibitor,
with the proviso that said liquid deicing composition does not comprise molasses solids.
11. The deicing composition of claim 10, wherein the deicing agent is present in an amount ranging from about 23% to about 27%.
12. The deicing composition of claim 10, wherein the deicing agent is present in an amount ranging from about 25% to about 26%.
13. The deicing composition of claim 10, wherein the at least one salt of an aldonic or aldaric acid is selected from the group consisting of salts of gluconic acid, D-erythronic acid, D-gulonic acid, saccharic acid, meso-tartaric acid, tartaric acid, L-mannonic acid, and mixtures thereof.
14. The deicing composition of claim 10, wherein the corrosion inhibitor is capable of reducing the corrosion rate of mild steel in an aqueous solution of 0.153 M sodium chloride by at least about 70% when the corrosion inhibitor is present in the solution at a concentration of 4.0 mM or lower.