1-8. (canceled)
9. A detector for detecting a state of an electrical storage device, wherein the electrical storage device comprises a capacitor and a chargedischarge circuit for charging or discharging the capacitor, the detector comprising:
a plurality of capacitor blocks including:
an electric current detector disposed between the capacitor and the chargedischarge circuit;
a plurality of the capacitors coupled together one of in series, in parallel, and in serial parallel;
a temperature sensor disposed near the capacitor;
a switch for selecting the capacitor, the switch coupled to each one of the capacitors or a plurality of the capacitors in groups;
a voltage detector for measuring a voltage of the capacitor selected by the switch;
a microprocessor for switching over the switch, and receiving outputs from the voltage detector and the temperature sensor; and
a data communication medium for receiving and outputting data of the microprocessor; and
a main computer for exchanging data with the capacitor blocks and receiving an electric current output from the electric current detector;
wherein the data communication medium carries state information which includes an electric current value supplied to the main computer, a temperature data supplied to the microprocessors of the respective blocks, and a prediction data, found by the microprocessor, about deterioration of the capacitor.
10. The detector of claim 9, wherein the switch is a multiplexer, and voltages of each one of the capacitors or voltages of a plurality of the capacitors in groups are output from the multiplexer to the microprocessor via a resistor-divided circuit working as the voltage detector.
11. (canceled)
12. The detector of claim 9, wherein the main computer predicts deterioration of the capacitor based on an electric current value detected by the electric current detector, voltage values of the capacitors, changing speeds of the voltage values, and temperatures of the capacitor blocks.
13-14. (canceled)
15. The detector of claim 9, wherein the data communication medium gives a higher priority to information of an abnormality of the capacitors before transmitting the information to the main computer.
16. The detector of claim 9, wherein a minimum voltage of voltages across the plurality of the capacitors coupled together in series in each one of the capacitor blocks is set as a grounding level of each one of the capacitor blocks, and the detector further includes a voltage regulator receiving the minimum voltage and a maximum voltage of the voltages across the plurality of the capacitors for supplying a predetermined voltage to respective circuits in each one of the capacitor blocks.
17. The detector of claim 16 further comprising an electrical indirect coupler disposed in the capacitor blocks and coupled to the data communication medium.
18. The detector of claim 9, wherein the data communication medium is formed of a wired network which couples the capacitor blocks to the main computer.
19. The detector of claim 9, wherein the data communication medium disposed between the capacitor blocks and the main computer is actualized by radio wave.
20. The detector of claim 9, wherein the microprocessor stores electrical specifications of the capacitor blocks and history of abnormality of the capacitors, and the specification and the history are transmitted via the data communication medium to the main computer.
21-23. (canceled)
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A magnetic tunnel junction device, comprising:
a lower conductive electrode;
a seed layer on said lower conductive electrode;
an antiferromagnetic layer on said seed layer;
an AP2 layer on said antiferromagnetic layer;
an antiferromagnetic coupling layer on said AP2 layer;
an AP1 layer on said antiferromagnetic coupling layer;
a tunneling layer of aluminum oxide on said AP1 layer;
on said tunneling layer, a free layer comprising first and second free sub-layers;
said first free sub-layer further comprising a layer of CoFeB containing at least 10 atomic percent boron, having an amorphous structure, a thickness of at least 15 Angstroms, and a magnetostriction constant whose absolute value is no greater than about 1.5\xd710\u22125;
said second free sub-layer further comprising a layer of material selected from the group consisting of CoB, CoNb, and CoNbHf, having an amorphous structure, a thickness of at least 15 Angstroms, and a magnetostriction constant whose absolute value and sign are negative such that it effectively cancels out magnetostriction due to said first free sub-layer, whereby said magnetic tunnel junction device has a magnetostriction constant whose absolute value is greater than 0.5\xd710\u22125;
a capping layer on said free layer; and
an upper conductive electrode on said capping layer.
2. The magnetic tunnel junction device described in claim 1 wherein said antiferromagnetic layer is selected from the group consisting of PtMn, NiMn, OsMn, IrMn, and PtPdMn.
3. The magnetic tunnel junction device described in claim 1 wherein said seed layer is selected from the group consisting of Ta, NiCr, NiFeCr.
4. The magnetic tunnel junction device described in claim 1 wherein said capping layer is selected from the group consisting of Ru, Rh, Ta, TaO, Al2O3, Cu, and TaN.
5. The magnetic tunnel junction device described in claim 1 wherein said antiferromagnetic coupling layer is selected from the group consisting of Rh, Ru, Cr, Cu, and Ir.
6. The magnetic tunnel junction device described in claim 1 wherein said free layer has its anisotropy maximized along a direction of its long axis.
7. A magnetic tunnel junction device, comprising:
a lower conductive electrode;
a seed layer on said lower conductive electrode;
an antiferromagnetic layer on said seed layer;
an AP2 layer on said antiferromagnetic layer;
an antiferromagnetic coupling layer on said AP2 layer;
an AP1 layer on said antiferromagnetic coupling layer;
a tunneling layer of magnesium oxide on said AP1 layer;
free layer on said tunneling layer;
said free layer having an amorphous structure, a thickness of at least 15 Angstroms, and further comprising at least two layers whose magnetostriction constants are of opposite sign, including first and second free sub-layers, said first free sub-layer being CoFeB, having an amorphous structure and a thickness of at least 15 Angstroms whereby said first free sub-layer and said second free sub-layer together have a net magnetostriction constant whose absolute value is less than 0.5\xd710\u22125;
a capping layer on said free layer; and
an upper conductive electrode on said capping layer.
8. The magnetic tunnel junction device described in claim 7 wherein said antiferromagnetic layer is selected from the group consisting of PtMn, NiMn, OsMn, IrMn, and PtPdMn.
9. The magnetic tunnel junction device described in claim 7 wherein said seed layer is selected from the group consisting of Ta, NiCr, NiFeCr.
10. The magnetic tunnel junction device described in claim 7 wherein said capping layer is selected from the group consisting of Ru, Rh, Ta, TaO, Al2O3, Cu, and TaN.
11. The magnetic tunnel junction device described in claim 7 wherein said antiferromagnetic coupling layer is selected from the group consisting of Ru, Rh, Ir, Cr, and Cu.
12. The magnetic tunnel junction device described in claim 7 wherein said free layer has its crystalline anisotropy maximized along a direction of its long axis.
13. A process, to form a magnetic tunnel junction device, comprising:
providing a lower conductive electrode and depositing thereon a seed layer;
depositing an antiferromagnetic layer on said seed layer;
depositing an AP2 layer on said antiferromagnetic layer;
depositing an antiferromagnetic coupling layer on said AP2 layer;
depositing, to a thickness of at least 15 Angstroms, an AP1 layer on said antiferromagnetic coupling layer;
depositing a dielectric tunneling layer of aluminum oxide on said AP1 layer;
by depositing a layer of amorphous material to a thickness of at least 15 Angstroms, forming, on said tunneling layer, a free layer comprising first and second free sub-layers, said second free sub-layer being selected from the group consisting of CoB, CoNb, and CoNbHf;
depositing a capping layer on said free layer; and
depositing an upper conductive electrode on said capping layer.
14. The process recited in claim 13 wherein said tunneling layer is aluminum oxide, said first free sub-layer is CoFeB containing at least 10 atomic percent boron, and said AP1 layer has a magnetostriction constant whose absolute value is no greater than 1.5\xd710\u22125.
15. A process to form a magnetic tunnel function device, comprising:
providing a lower conductive electrode and depositing thereon a seed layer;
depositing an antiferromagnetic layer on said seed layer;
depositing an AP2 layer on said antiferromagnetic layer;
depositing an antiferromagnetic coupling layer on said AP2 layer;
depositing, to a thickness of at least 15 Angstroms, an AP1 layer on said antiferromagnetic coupling layer;
depositing a dielectric tunneling layer of magnesium oxide on said AP1 layer;
forming said free layer by depositing at least two layers whose magnetostriction constants are of opposite sign to each other, thereby causing said free layer to have a net magnetostriction constant whose absolute value is less than 0.5\xd710\u22125;
depositing a capping layer on said free layer; and
depositing an upper conductive electrode on said capping layer.