1. A system comprising:
a control module that controls a valve of a variable intake manifold when the system operates in a first mode, that commands the valve to a first position when a desired airflow through the variable intake manifold is greater than a threshold, and that commands the valve to a second position when the desired airflow is less than the threshold;
a valve control module that controls the valve of the variable intake manifold when the system operates in a second mode and that commands the valve to move from the second position to the first position when the desired airflow is less than the threshold; and
a diagnostic module that determines an operating state of the valve based on whether the valve is detected at the first position a predetermined period after the valve control module commands the valve.
2. The system of claim 1 wherein the control module and the valve control module command the valve to modify a configuration of an intake tract of the variable intake manifold, wherein the intake tract guides air into cylinders of an engine.
3. The system of claim 2 wherein the control module and the valve control module command the valve to modify at least one of a length of the intake tract, a diameter of the intake tract, a volume of the intake tract, and a number of runners that guide air into the cylinders.
4. The system of claim 1 wherein the control module commands the valve to the first position to increase an amount of air guided into cylinders of an engine and commands the valve to the second position to reduce the amount of air guided into the cylinders of the engine.
5. The system of claim 1 wherein the desired airflow is determined based on at least one of a speed of an engine, a position of a throttle, and a speed of a vehicle.
6. The system of claim 5 wherein the valve control module commands the valve to move from the second position to the first position when at least one of the speed of the engine is less than a predetermined speed and the speed of the vehicle is less than a predetermined vehicle speed.
7. The system of claim 1 wherein the valve control module commands the valve to move from the second position to the first position when at least one of a temperature of an engine is greater than a predetermined temperature and an operating period of the engine is greater than a predetermined operating period.
8. The system of claim 1 wherein the diagnostic module determines that the operating state of the valve is a fault state when the valve is not detected at the first position.
9. The system of claim 8 wherein the diagnostic module sets at least one of a malfunction indicator light and a diagnostic trouble code when the operating state of the valve is the fault state.
10. A method comprising:
commanding a valve of a variable intake manifold to a first position when a desired airflow through the variable intake manifold is greater than a threshold when operating in a first mode;
commanding the valve to a second position when the desired airflow is less than the threshold when operating in the first mode;
commanding the valve to move from the second position to the first position when the desired airflow is less than the threshold when operating in a second mode; and
determining an operating state of the valve based on whether the valve is detected at the first position a predetermined period after commanding the valve to move from the second position to the first position in the second mode.
11. The method of claim 10 further comprising commanding the valve to modify a configuration of an intake tract of the variable intake manifold, wherein the intake tract guides air into cylinders of an engine.
12. The method of claim 11 further comprising commanding the valve to modify at least one of a length of the intake tract, a diameter of the intake tract, a volume of the intake tract, and a number of runners that guide air into the cylinders.
13. The method of claim 10 further comprising:
commanding the valve to the first position to increase an amount of air guided into cylinders of an engine; and
commanding the valve to the second position to reduce the amount of air guided into the cylinders of the engine.
14. The method of claim 10 further comprising determining the desired airflow based on at least one of a speed of an engine, a position of a throttle, and a speed of a vehicle.
15. The method of claim 14 further comprising commanding the valve to move from the second position to the first position in the second mode when at least one of the speed of the engine is less than a predetermined speed and the speed of the vehicle is less than a predetermined vehicle speed.
16. The method of claim 10 further comprising commanding the valve to move from the second position to the first position in the second mode when at least one of a temperature of an engine is greater than a predetermined temperature and an operating period of the engine is greater than a predetermined operating period.
17. The method of claim 10 further comprising determining that the operating state of the valve is a fault state when the valve is not detected at the first position.
18. The method of claim 17 further comprising setting at least one of a malfunction indicator light and a diagnostic trouble code when the operating state of the valve is the fault state.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a semiconductor device comprising:
forming at least a first thin film transistor and a second thin film transistor over a substrate;
forming at least a first antenna and a second antenna over the substrate, the first antenna being on and electrically connected to the first thin film transistor, and the second antenna being on and electrically connected to the second thin film transistor;
placing the substrate between a first support medium having at least first and second inspection antennas and a second support medium having inspection electrodes, so that the first antenna and the second antenna are located over the first inspection antenna and the second inspection antenna, respectively, with the substrate interposed therebetween;
supplying a signal or power supply voltage to the first and second antennas via the first and second inspection antennas without contact with the first and second antennas;
moving the inspection electrodes over an arbitrary portion or a whole portion of at least the first and second antennas with a space therebetween;
conducting an inspection for grasping a first operating state of the first thin film transistor and the first antenna from a first voltage of the inspection electrodes and a first position of the inspection electrodes with respect to the first antenna, and a second operating state of the second thin film transistor and the second antenna from a second voltage of the inspection electrodes and a second position of the inspection electrodes with respect to the second antenna;
separating the first thin film transistor with the first antenna and the second thin film transistor from the substrate; and
attaching at least one of the first thin film transistor and the first antenna to a third support medium.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the substrate is an insulator.
3. The method for manufacturing a semiconductor device according to claim 1, wherein the substrate is a glass substrate or a plastic substrate.
4. The method for manufacturing a semiconductor device according to claim 1, wherein the spaces are controlled by flowing a fluid thereinto.
5. The method for manufacturing a semiconductor device according to claim 1, wherein an inspection method by voltages applied to the first and second antennae are calculated by a method of successive approximation, a Fourier transform method using a projection slice theorem, or a convolution theorem method to grasp the first and second operating states is employed.
6. The method for manufacturing a semiconductor device according to claim 1, wherein the inspection electrodes are rotated.
7. The method for manufacturing a semiconductor device according to claim 1, wherein further comprising a step of forming an insulating film over the first thin film transistor, wherein then the first antenna is formed over the insulating film.
8. A method for manufacturing a semiconductor device comprising:
forming a first thin film transistor and a second thin film transistor over a substrate;
forming a first antenna on the first thin film transistor and a second antenna on the second thin film transistor over the substrate, the first antenna being electrically connected to the first thin film transistor, and the second antenna electrically connected to the second thin film transistor;
placing the substrate between a first support medium having first and second inspection antennas and a second support medium having first and second inspection electrodes so that the first antenna and the second antenna are located over a first inspection antenna and a second inspection antenna respectively, with the substrate interposed therebetween;
supplying a signal or power supply voltage to the first and second antennas via the first and second inspection antennas without contact with the first and second antennas;
moving first and second inspection electrodes with an arbitrary portion or a whole portion of the first and second antennas with a space therebetween;
conducting an inspection for grasping a first operating state of the first thin film transistor and the first antenna from a first voltage of the first inspection electrode and a first position of the first inspection electrode with respect to the first antenna, a second operating state of the second thin film transistor and the second antenna from a second voltage of the first inspection electrode and a second position of the first inspection electrode with respect to the second antenna, a third operating state of the first thin film transistor and the first antenna from a third voltage of a second inspection electrode and a third position of the second inspection electrode with respect to the first antenna, a fourth operating state of the second thin film transistor and the second antenna from a fourth voltage of the second inspection electrode and a fourth position of the second inspection electrode with respect to the second antenna,
separating the first thin film transistor with the first antenna and the second thin film transistor from the substrate; and
attaching at least one of the first thin film transistor and the first antenna to a third support medium.
9. The method for manufacturing a semiconductor device according to claim 8, wherein the substrate is an insulator.
10. The method for manufacturing a semiconductor device according to claim 8, wherein the substrate is a glass substrate or a plastic substrate.
11. The method for manufacturing a semiconductor device according to claim 8, wherein the spaces are controlled by flowing a fluid thereinto.
12. The method for manufacturing a semiconductor device according to claim 8, wherein an inspection method by which voltages applied to first and second antennae are calculated by a method of successive approximation, a Fourier transform method using a projection slice theorem, or a convolution theorem method to grasp the first, second, third and fourth operating states is employed.
13. The method for manufacturing a semiconductor device according to claim 8, wherein the first and second inspection electrodes are rotated.
14. The method for manufacturing a semiconductor device according to claim 8, wherein further comprising a step of forming an insulating film over the first thin film transistor, wherein then the first antenna is formed over the insulating film.