1. A method for fabricating a capacitor, the method comprising:
providing a three dimensional electrically conductive substrate having a surface and a trench extending into the substrate from the surface;
depositing, onto the surface of the substrate and along surfaces of the trench, a first conformal film from a mixture of a supercritical gas and a first precursor material to subsequently provide a dielectric layer;
depositing, onto the first conformal film, a second conformal film from a solution of second precursor material to subsequently provide a top electrode layer; and
forming a gas barrier atop the top electrode layer.
2. A method as set forth in claim 1, wherein, in the step of providing, the three dimensional substrate includes a high aspect ratio feature over 5:1.
3. A method as set forth in claim 1, wherein the step of depositing the first conformal film onto the surface of the substrate includes oxidizing the first conformal film to provide the dielectric layer.
4. A method as set forth in claim 1, wherein, in the step of depositing the first conformal film, the supercritical gas includes CO2 and the first precursor includes one of Hf, HfSi, Ta, Al, Bi, Pb, Zr, Ti, SrTa, SrTi, BiTi, BiSrTa, BiLaTi, PbZrTi, SrTaNiNb, or a combination thereof.
5. A method as set forth in claim 1, wherein the step of depositing the second conformal film includes oxidizing the second conformal film to provide the top electrode layer.
6. A method as set forth in claim 5, wherein the step forming the gas barrier results from oxidizing the second conformal film.
7. A method as set forth in claim 1, wherein, in the step of depositing the second conformal film, the solution of a second precursor includes one of Ru, Ir, Pt, Al, Ag, Au, Pd, Cu, AlCu, AlCuSi, or a combination thereof.
8. A method as set forth in claim 1, wherein the step of depositing a second conformal film employs a mixture of a supercritical gas and reaction reagent for the second precursor material.
9. A method as set forth in claim 8, wherein, in the step of depositing the second conformal film, the supercritical gas includes CO2 and the solution of a second precursor includes one of Ru, Ir, Pt, Al, Ag, Au, Pd, Cu, AlCu, AlCuSi, or a combination thereof.
10. A method as set forth in claim 8, wherein the step of depositing the second conformal film includes oxidizing the second conformal film to provide the top electrode layer.
11. A method as set forth in claim 10, wherein the step forming the gas barrier results from oxidizing the second conformal film.
12. A method as set forth in claim 1, further including:
simultaneously oxidizing the first conformal film and the second conformal film to form the dielectric layer and the top electrode layer thereon.
13. A method as set forth in claim 1, wherein the step of forming the gas barrier includes:
depositing, onto the top electrode layer, a third conformal film from a solution of third precursor material to subsequently provide a gas barrier; and
oxidizing the third conformal film to form the gas barrier.
14. A method as set forth in claim 13, wherein the step of depositing the third conformal film employs a mixture of a supercritical gas and a reaction reagent for the third precursor material.
15. A method as set forth in claim 13, wherein, in the step of depositing the third conformal film, the supercritical gas includes CO2 and the second precursor includes one of Ru, Ir, Pt, Al, Ag, Au, Pd, Cu or a combination thereof.
16. A method for fabricating a capacitor, the method comprising:
providing a three dimensional substrate having a surface and a trench extending into the substrate from the surface;
depositing, onto the surface of the substrate and along surfaces of the trench, a first conformal film from a mixture of a supercritical gas and a first precursor material to subsequently provide a bottom electrode;
depositing, onto the first conformal film, a second conformal film from a mixture of a supercritical gas and a second precursor material to subsequently provide a dielectric layer; and
depositing, onto the second conformal film, a third conformal film from a mixture of a supercritical gas and a third precursor material to subsequently provide a top electrode layer.
17. A method as set forth in claim 16, wherein, in the step of providing, the three dimensional substrate includes a high aspect ratio feature over 5:1.
18. A method as set forth in claim 16, wherein the step of depositing the first conformal film onto the surface of the substrate includes oxidizing the first conformal film to provide the bottom electrode layer.
19. A method as set forth in claim 16, wherein, in the step of depositing the first conformal film, the supercritical gas includes CO2 and the first precursor includes one Ru, Ir, Pt, Al, Ag, Au, Pd, Cu, AlCu, AlCuSi, or a combination thereof.
20. A method as set forth in claim 16, wherein the step of depositing the second conformal film includes oxidizing the second conformal film to provide the dielectric layer.
21. A method as set forth in claim 16, wherein, in the step of depositing the second conformal film, the supercritical gas includes CO2 and the second precursor includes one of Hf, HfSi, Ta, Al, Bi, Pb, Zr, Ti, SrTa, SrTi, BiTi, BiSrTa, BiLaTi, PbZrTi, SrTaNiNb, or a combination thereof.
22. A method as set forth in claim 16, wherein the step of depositing the third conformal film includes oxidizing the third conformal film to provide the top electrode layer.
23. A method as set forth in claim 22, wherein the step of oxidizing generates a gas barrier atop the top electrode layer.
24. A method as set forth in claim 16, wherein, in the step of depositing the third conformal film, the supercritical gas includes CO2 and the third precursor includes one of Ru, Ir, Pt, Al, Ag, Au, Pd, Cu, AlCu, AlCuSi, or a combination thereof.
25. A method as set forth in claim 16, further including:
simultaneously oxidizing the first conformal film, the second conformal film, and the third conformal film to form the bottom electrode layer, the dielectric layer and the top electrode layer respectively.
26. A method as set forth in claim 16, further including:
depositing, onto the top electrode layer, a fourth conformal film from a mixture of a supercritical gas and a fourth precursor material to subsequently provide a gas barrier; and
oxidizing the fourth conformal film to form the gas barrier.
27. A method as set forth in claim 26, wherein, in the step of depositing the fourth conformal film, the supercritical gas includes CO2 and the fourth precursor includes one of Ru, Ir, Pt, Al, Ag, Au, Pd, Cu, or a combination thereof.
28. A capacitor comprising:
a three dimensional electrically conductive substrate having a surface and a trench extending into the substrate from the surface;
a conformal dielectric layer positioned on the surface of the substrate and along surfaces of the trench;
a conformal top electrode positioned on the dielectric layer; and
a conformal gas barrier layer positioned on the top electrode.
29. A capacitor as set forth in claim 28, wherein the three dimensional substrate includes a high aspect ratio feature over 5:1.
30. A capacitor as set forth in claim 28, wherein the trench is sub-micron or nanometer in size.
31. A capacitor as set forth in claim 28, wherein the dielectric layer is generated from a high k material.
32. A capacitor as set forth in claim 31, wherein the high k material includes one of Hf, HfSi, Ta, Al, Bi, Pb, Zr, Ti, SrTa, SrTi, BiTi, BiSrTa, BiLaTi, PbZrTi, SrTaNiNb, or a combination thereof.
33. A capacitor as set forth in claim 28, wherein the top electrode and the gas barrier layer are made from a material including a metal, metal alloy, superconducting mixture or a combination thereof.
34. A capacitor as set forth in claim 33, wherein the material includes Ru, Ir, Pt, Al, Ag, Au, Pd, Cu, AlCu, AlCuSi, or a combination thereof.
35. A capacitor as set forth in claim 28, wherein each of the conformal layers is provided with about 2% to about 5% thickness uniformity.
36. A capacitor as set forth in claim 28, wherein each of the conformal layers is deposited substantially without an appreciable amount of Carbon therein.
37. A capacitor as set forth in claim 28 wherein the three dimensional substrate includes an array of trenches, each provided with a conformal dielectric layer, a conformal top electrode layer, and a conformal gas barrier layer.
38. A capacitor as set forth in claim 28, wherein the array further includes a common top electrode and a common bottom electrode.
39. A capacitor comprising:
a three dimensional substrate having a surface and a trench extending from the surface into the substrate;
a conformal bottom electrode positioned on the surface of the substrate and along surfaces of the trench;
a conformal dielectric layer positioned on the bottom electrode; and
a conformal top electrode positioned on the dielectric layer.
40. A capacitor as set forth in claim 39, wherein the three dimensional substrate includes a high aspect ratio feature over 5:1.
41. A capacitor as set forth in claim 39, wherein the trench is sub-micron or nanometer in size.
42. A capacitor as set forth in claim 39, wherein the bottom electrode layer and the top electrode layer are made from a material including a metal, metal alloy, superconducting mixture or a combination thereof.
43. A capacitor as set forth in claim 42, wherein the materials of Ru, Ir, Pt, Al, Ag, Au, Pd, Cu, AlCu, AlCuSi, or a combination thereof.
44. A capacitor as set forth in claim 39, wherein the dielectric layer is generated from a high k material.
45. A capacitor as set forth in claim 44, wherein the high k material includes one of Hf, HfSi, Ta, Al, Bi, Pb, Zr, Ti, SrTa, SrTi, BiTi, BiSrTa, BiLaTi, PbZrTi, SrTaNiNb, or a combination thereof.
46. A capacitor as set forth in claim 39, further including a gas barrier positioned on the top electrode layer.
47. A capacitor as set forth in claim 46, wherein the gas barrier layer is made from a material including a metal, metal alloy, superconducting mixture or a combination thereof.
48. A capacitor as set forth in claim 47, wherein the material of Ru, Ir, Pt, Al, Ag, Au, Pd, Cu, or a combination thereof.
49. A capacitor as set forth in claim 46, wherein each of the conformal layers is provided with about 2% to about 5% thickness uniformity.
50. A capacitor as set forth in claim 46, wherein each of the conformal layers is deposited substantially without an appreciable amount of Carbon therein.
51. A capacitor as set forth in claim 39, wherein the three dimensional substrate includes an array of trenches, each provided with a conformal dielectric layer, a conformal top electrode layer, and a conformal gas barrier layer.
52. A capacitor as set forth in claim 51, wherein the array further includes a common top electrode and a common bottom electrode.
53. A capacitor as set forth in claim 51, wherein the array includes a gas barrier layer within each of the trenches.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating an orthodontic aligner for a patient, comprising the steps of:
acquiring a physical model of a dental arch of a patient, said dental arch comprising a plurality of teeth;
producing a virtual model of a patient’s dental arch, said virtual model comprising a plurality of virtual teeth that correspond with said plurality of teeth of said dental arch of said patient;
processing said virtual model to accommodate individual movement of at least one of said plurality of virtual teeth;
creating a first activated iteration of said virtual model and comprising moving each member of a first virtual tooth set that comprises at least one of said plurality of virtual teeth;
producing a first positioning guide from said first activated iteration of said virtual model;
creating a first activated iteration of said physical model using said first positioning guide being applied to said physical model; and
fabricating a first aligner based upon said first activated iteration of said physical model.
2. The method of claim 1, wherein said acquiring step comprises receiving said physical model from an orthodontist.
3. The method of claim 2, wherein said acquiring step comprises producing said physical model.
4. The method of claim 1, wherein said physical model comprises a plurality of model teeth that correspond with said plurality of teeth of said dental arch of said patient, said method further comprising:
processing said physical model to accommodate individual movement of at least one of a plurality of model teeth of said physical model.
5. The method of claim 4, wherein said processing said physical model step comprises resetting said physical model.
6. The method of claim 5, wherein said processing said physical model step comprises processing said physical model to accommodate individual movement of each of said plurality of model teeth.
7. The method of claim 6, further comprising:
producing a template aligner for said physical model prior to said processing said physical model step;
positioning said template aligner on said physical model after said processing said physical model step, wherein said positioning said template aligner step comprises presenting said plurality of model teeth at least substantially in a position corresponding with a position of said plurality of model teeth prior to said processing said physical model step.
8. The method of claim 7, wherein said creating a first activated iteration of said physical model step comprises individually engaging each said model tooth, whose corresponding said virtual tooth was moved by said creating a first activated iteration of said virtual model step, and manually moving the same into engagement with a corresponding portion of said first positioning guide.
9. The method of claim 8, wherein said creating a first activated iteration of said physical model step comprises moving each said model tooth, whose corresponding said virtual tooth was moved by said creating a first activated iteration of said virtual model step, into engagement with either a facially-disposed reference datum of said first positioning guide or a lingually-disposed reference datum of said first positioning guide.
10. The method of claim 9, wherein said each said facially-disposed reference datum of said first positioning guide and each said lingually-disposed reference datum of said first positioning guide corresponds with an entire mesio-distal extent of the corresponding said model tooth.
11. The method of claim 7, wherein said creating a first activated iteration of said physical model step comprises moving at least some of said plurality of model teeth during and responsive to applying said first positioning guide to said physical model.
12. The method of claim 11, wherein said first positioning guide comprises a continuous cavity that captures each of said plurality of model teeth after said applying step.
13. The method of claim 12, wherein said first positioning guide comprises an anterior section, a first posterior section for a first arch side of said physical model, and a second posterior section for a second arch side of said physical model, wherein said anterior section, said first posterior section, and said second posterior section are independently movable.
14. The method of claim 12, wherein only a first portion of said plurality of virtual teeth are moved by said creating a first activated iteration of said virtual model step, wherein a remainder of said plurality of virtual teeth remain in an original position for said first activated iteration of said virtual model, and wherein said method further comprises the step of:
registering said first positioning guide to said physical model prior to execution of said creating a first activated iteration of said physical model step, said registering step comprising disposing said first positioning guide in interfacing relation with each said model tooth, whose corresponding said virtual tooth is within said remainder.
15. The method of claim 14, wherein said first positioning guide interfaces with an entire mesio-distal extent of each said model tooth, whose corresponding said virtual tooth is within said remainder, on at least one of a facial side and a lingual side of said model tooth.
16. The method of claim 14, wherein said first positioning guide interfaces with an entire mesio-distal extent of each said model tooth, whose corresponding said virtual tooth is within said remainder, on only one of a facial side and a lingual side of said model tooth.
17. The method of claim 1, wherein said producing a virtual model step comprises scanning at least one of said dental arch of said patient and said physical model.
18. The method of claim 17, wherein said producing a virtual model step comprises acquiring a data set that at least substantially replicates said dental arch of said patient.
19. The method of claim 1, wherein said first positioning guide has a thickness of no more than about 1 mm (0.040\u2033), wherein said thickness is defined by an occlusalgingival dimension when said first positioning guide is applied to said physical model.
20. The method of claim 1, further comprising:
producing a second positioning guide from said first activated iteration of said virtual model, wherein said creating a first activated iteration of said physical model step comprises applying each of said first and second positioning guides to said physical model.
21. The method of claim 20, wherein said first and second positioning guides are spaced in an occlusalgingival dimension when applied to said physical model.
22. The method of claim 1, wherein said producing a first positioning guide step comprises creating a two-dimensional first positioning guide.
23. The method of claim 22, wherein said first positioning guide has a thickness within a range of about 2 mm to about 3 mm, wherein said thickness is defined by an occlusalgingival dimension when said first positioning guide is applied to said physical model.
24. The method of claim 23, wherein said producing a first positioning guide step comprises creating at least one two-dimensional reference datum on said first positioning guide for each model tooth of said physical model.
25. The method claim 1, wherein said producing a first positioning guide step comprises providing a corresponding occlusal surface and at least one of a lingual surface and a facial surface for each said physical tooth of said physical model.
26. The method of claim 25, wherein said producing a first positioning guide step comprises creating a cavity for each said model tooth of said physical model that is defined by at least occlusal and lingual surfaces.
27. The method of claim 26, wherein said producing a first positioning guide step comprises creating a three-dimensional cavity such that each model tooth of said physical model is disposed with a corresponding portion of said three-dimensional cavity by said creating a first activated iteration of said physical model step.
28. The method of claim 1, wherein said creating a first activated iteration of said physical model step comprises registering said first positioning guide to said physical model using at least one model tooth of said physical model that is not being moved by said creating a first activated iteration of said physical model step.