1. A bit line equalizing control circuit of a semiconductor memory apparatus, comprising:
a control signal generating unit that receives a bank active signal to generate a control signal such that a bit line equalizing signal is delayed and enabled;
a bit line equalizing selecting unit that generates a bit line equalizing detection signal in response to a plurality of mat select signals and the control signal; and
a driver that receives the bit line equalizing detection signal to generate the bit line equalizing signal.
2. The bit line equalizing control circuit of claim 1, wherein the bit line equalizing selecting unit includes:
a signal combining unit that combines the plurality of mat select signals with each other; and
a detection signal generating unit that receives an output of the signal combining unit and the control signal to generate the bit line equalizing detection signal.
3. The bit line equalizing control circuit of claim 2, wherein the detection signal generating unit generates the bit line equalizing detection signal enabled if the output of the signal combining unit and the control signal are enabled.
4. The bit line equalizing control circuit of claim 1, wherein the plurality of mat select signals includes a mat select address and a redundancy fuse output that is enabled when a substitute mat is selected from a redundancy circuit.
5. The bit line equalizing control circuit of claim 1, wherein the control signal generating unit delays the bank active signal, and the control signal generating unit includes a driver that receives the bank active signal to generate the control signal.
6. The bit line equalizing control circuit of claim 2, wherein the control signal generating unit generates the control signal, which is enabled at a time period later than a time to enable the output of the signal combining unit and disabled simultaneously with or at a time period later than a time to disable the output of the signal combining unit.
7. A bit line equalizing control circuit of a semiconductor memory apparatus, comprising:
a control signal generating unit that receives a bank active signal to generate a control signal such that a bit line equalizing signal is delayed and enabled;
a first bit line equalizing selecting unit that generates a first bit line equalizing detection signal in response to the control signal and a plurality of first mat select signals when a mat is selected from a first core cell;
a second bit line equalizing selecting unit that generates a second bit line equalizing detection signal in response to the control signal and a plurality of second mat select signals when a mat is selected from a second core cell different from the first core cell; and
a bit line equalizing driver that receives the first and second bit line equalizing detection signals to generate the bit line equalizing signal.
8. The bit line equalizing control circuit of claim 7, wherein the first bit line equalizing selecting unit includes:
a first signal combining unit that combines the plurality of first mat select signals; and
a first detection signal generating unit that receives an output of the first signal combining unit and the control signal to generate the first bit line equalizing detection signal.
9. The bit line equalizing control circuit of claim 8, wherein the first detection signal generating unit generates the first bit line equalizing detection signal enabled when the output of the first signal combining unit and the control signal are enabled.
10. The bit line equalizing control circuit of claim 7, wherein the second bit line equalizing selecting unit includes:
a second signal combining unit that combines the plurality of second mat select signals; and
a second detection signal generating unit that receives an output of the second signal combining unit and the control signal to generate the second bit line equalizing detection signal.
11. The bit line equalizing control circuit of claim 10, wherein the second detection signal generating unit generates the second bit line equalizing detection signal enabled when the output of the second signal combining unit and the control signal are enabled.
12. The bit line equalizing control circuit of claim 7, wherein the plurality of first mat select signals include a mat select address signal generated when the mat is selected from the first core cell and a redundancy fuse output signal generated when a substitute mat is selected from a redundancy circuit.
13. The bit line equalizing control circuit of claim 7, wherein the plurality of second mat select signals include a mat select address signal generated when the mat is selected from the second core cell and a redundancy fuse output signal when a substitute mat is selected from a redundancy circuit.
14. The bit line equalizing control circuit of claim 7, wherein the control signal generating unit delays the bank active signal, and the control signal generating unit includes a driver that receives the bank active signal to generate the control signal.
15. The bit line equalizing control circuit of claim 7, wherein the control signal generating unit generates the control signal, which is enabled at a time period later than a time to enable outputs of first and second signal combining units and disabled simultaneously with or at a time later than a time to disable the outputs of the first and second signal combining units.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is;
1. An electrically insulating non-woven fabric comprising para-aramid fiber chops bonded with each other by a binder, said non-woven fabric characterized by said para-aramid fiber chops including chops of poly-p-phenylene-diphenylether-terephthalamide fibers and poly-p-phenylene-terephthalamide fibers with a blend ratio by weight of said poly-p-phenylene-diphenylether-terephthalamide fibers relative to said poly-p-phenylene-terephthalamide fibers ranging from 1090 to 9010.
2. An electrically insulating non-woven fabric as set forth in claim 1 and wherein said blend ratio by weight of said poly-p-phenylene-diphenylether-terephthalamide fibers relative to said poly-p-phenylene-terephthalamide fibers ranges from 3070 to 7030.
3. An electrically insulating non-woven fabric as set forth in claim 1 or 2 and wherein said binder is a thermosetting resin binder adhered to their intersections of said fibers each other.
4. An electrically insulating non-woven fabric as set forth in claim 1 or 2 and wherein said binder is a thermoplastic resin having a softening temperature of 220 C. or higher and bonded to said para-aramid fiber chops by at least one of thermal adhesion and intertwinement.
5. An electrically insulating non-woven fabric as set forth in claim 1 or 2 and wherein said binder is both of a thermosetting resin binder adhered to intersections of said fibers each other and a thermoplastic resin having a softening temperature of 220 C. or higher and bonded to said para-aramid fiber chops by at least one of thermal adhesion and intertwinement.
6. An electrically insulating non-woven fabric as set forth in claim 4 and wherein said thermoplastic resin having the softening temperature of 220 C. or higher is at least one selected from a group of fiber chops, fibrids and pulps.
7. An electrically insulating non-woven fabric as set forth in claim 5 and wherein said thermoplastic resin having the softening temperature of 220 C. or higher is at least one selected from a group of fiber chops, fibrids and pulps.
8. An electrically insulating non-woven fabric as set forth in claim 1 and further comprising para-aramid fiber pulps as auxiliary fibers.
9. A prepreg comprising sheet-like laminate base material impregnated and dried with a thermosetting resin, said sheet-like laminate base material comprising an electrically insulating non-woven fabric comprising para-aramid fiber chops bonded with each other by a binder, said non-woven fabric characterized by said para-aramid fiber chops including chops of poly-p-phenylene-diphenylether-terephthalamide fibers and poly-p-phenylene-terephthalamide fibers with a blend ratio by weight of said poly-p-phenylene-diphenylether-terephthalamide fibers relative to said poly-p-phenylene-terephthalamide fibers ranging from 1090 to 9010.
10. A prepreg as set forth in claim 9 and wherein said blend ratio by weight of said poly-p-phenylene-diphenylether-terephthalamide fibers relative to said poly-p-phenylene-terephthalamide fibers ranging from 3070 to 7030.
11. A prepreg as set forth in claim 9 or 10 and wherein said binder is a thermosetting resin binder adhered to intersections of said fibers each other.
12. A prepreg as set forth in claim 9 or 10 and wherein said binder is a thermoplastic resin having a softening temperature of 220 C. or higher and bonded to said para-aramid fiber chops by at least one of thermal adhesion and intertwinement.
13. A prepreg as set forth in claim 9 or 10 and wherein said binder is both of a thermosetting resin binder adhered to intersections of said fibers each other and a thermoplastic resin having a softening temperature of 220 C. or higher and bonded to said para-aramid fiber chops by at least one of thermal adhesion and intertwinement.
14. A prepreg as set forth in claim 12 and wherein said thermoplastic resin having the softening temperature of 220 C. or higher is at least one selected from a group of fiber chops, fibrids and pulps.
15. A prepreg as set forth in claim 13 and wherein said thermoplastic resin having the softening temperature of 220 C. or higher is at least one selected from a group of fiber chops, fibrids and pulps.
16. A prepreg as set forth in claim 9 and further comprising para-aramid fiber pulps as auxiliary fibers.
17. A laminate comprising sheet-like laminate base material impregnated and dried with a thermosetting resin and formed by being heated and pressed, said sheet-like laminate base material comprising an electrically insulating non-woven fabric comprising para-aramid fiber chops bonded with each other by a binder, said non-woven fabric characterized by said para-aramid fiber chops having a combination of poly-p-phenylene-diphenylether-terephthalamide fibers and poly-p-phenylene-terephthalamide fibers with a blend ratio by weight of said poly-p-phenylene-diphenylether-terephthalamide fibers relative to said poly-p-phenylene-terephthalamide fibers ranging from 1090 to 9010.
18. A laminate as set forth in claim 17 and wherein said blend ratio by weight of said poly-p-phenylene-diphenylether-terephthalamide fibers relative to said poly-p-phenylene-terephthalamide fibers ranging from 3070 to 7030.
19. A laminate as set forth in claim 17 or 18 and wherein said binder is a thermosetting resin binder adhered to intersections of said fibers each other.
20. A laminate as set forth in claim 17 or 18 and wherein said binder is a thermoplastic resin having a softening temperature of 220 C. or higher and bonded to said para-aramid fiber chops by at least one of thermal adhesion and intertwinement.
21. A laminate as set forth in claim 17 or 18 and wherein said binder is both of a thermosetting resin binder adhered to intersections of said fibers each other and a thermoplastic resin having a softening temperature of 220 C. or higher and bonded to said para-aramid fiber chops by at least one of thermal adhesion and intertwinement.
22. A laminate as set forth in claim 20 and wherein said thermoplastic resin having the softening temperature of 220 C. or higher is at least one selected from a group of fiber chops, fibrids and pulps.
23. A laminate as set forth in claim 21 and wherein said thermoplastic resin having the softening temperature of 220 C. or higher is at least one selected from a group of fiber chops, fibrids and pulps.
24. A laminate as set forth in claim 17 and further comprising para-aramid fiber pulps as auxiliary fibers.