1. An epitaxial reactor comprised of a first and a second reaction chamber or station, coupled on a single support frame, operated by a dual output power generator, wherein the first reaction chamber can be operated at one time while the second reaction chamber has to carry out a purge step, a loading step and an unloading step, having a time overlap between an operating time of the first reaction chamber and an operating time of the second operating chamber beginning when the first reaction chamber is still operating and ending when a susceptor of the second reaction chamber is at a working temperature.
2. The epitaxial reactor of claim 1, wherein the time overlap is between 1 and 20 minutes.
3. The epitaxial reactor of claim 2, wherein the first and second reaction chambers are induction heated by an induction coil supplied by a medium frequency AC power generator comprising two alternatively actuated solid state inverters, so that when the first reaction chamber is heated for carrying out a deposition process, the second reaction chamber is purged, loaded and unloaded resulting in the time overlap lasting for 10 minutes.
4. The epitaxial reactor of claim 3, wherein the medium frequency AC power generator is further comprised of a pair of DC to AC inverters supplied by a rectifier assembly connected to an electric main and controlled by a computerized controller.
5. The epitaxial reactor of claim 4, wherein the rectifier assembly further comprises a rectifier bridge containing silicon rectifier diodes.
6. The epitaxial reactor of claim 4, wherein the rectifier assembly further comprises a rectifier bridge containing silicon rectifier diodes and silicon controlled rectifiers (SCR).
7. The epitaxial reactor of claim 4, wherein the rectifier assembly further comprises a rectifier bridge containing silicon controlled rectifiers (SCR).
8. The epitaxial reactor of claim 4, wherein the induction coils are powered by a controlled DC voltage supplied to the pair of DC to AC inverters.
9. The epitaxial reactor of claim 8, wherein the controlled DC voltage is controlled by the rectifier assembly and the rectifier assembly is connected to the electric main.
10. The epitaxial reactor of claim 4, wherein the induction coils are powered by a controlled duty cycle to the pair of DC to AC inverters.
11. The epitaxial reactor of claim 4, wherein the computerized controller begins to actuate the first reaction chamber by a loading a first set of one or more wafers into the first reaction chamber, purging the first reaction chamber, powering a susceptor of the first reaction chamber for a time period, cooling the susceptor of the first reaction chamber; the computerized controller begins to actuate the second reaction chamber, before the susceptor of the first reaction chamber is cooled, by loading a second set of one or more wafers into the second reaction chamber, purging the second reaction chamber, powering the susceptor of the second reaction chamber, obtaining a time overlap between the powering of the first and second reaction chambers.
12. The method of claim 11, wherein the computerized controller can shut down the first or second reaction chamber and operate the un-shut down reaction chamber independently.
13. The epitaxial reactor of claim 10, wherein the computerized controller begins to actuate the first reaction chamber by a loading a first set of one or more wafers into the first reaction chamber, purging the first reaction chamber, powering a susceptor of the first reaction chamber for a time period, cooling the susceptor of the first reaction chamber, the computerized controller begins to actuate the second reaction chamber, before the susceptor of the first reaction chamber is cooled, by loading a second set of one or more wafers into the second reaction chamber, purging the second reaction chamber, powering the susceptor of the second reaction chamber, obtaining a time overlap between the powering of the first and second reaction chambers.
14. The method of claim 13, wherein the computerized controller can shut down the first or second reaction chamber and operate the un-shut down reaction chamber independently.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for polishing a glass hard disk platter, comprising polishing a glass hard disk platter using a stable slurry in which cerium(IV) oxide particles having an average secondary particle size of 0.1 to 0.5 \u03bcm are dispersed in water, which contains CeO2 in a concentration of 0.2 to 30 wt %, and contains a quaternary ammonium ion (NR4+, where R is an organic group) in a (NR4+)(CeO2) molar ratio in a range of 0.001 to 1, wherein a proportion of cerium expressed as a ratio of (cerium oxide)(cerium oxide + other rare earth oxides) in the cerium(IV) oxide particles is 95% or more based on weight, the stable slurry is a slurry of surface-modified cerium(IV) oxide obtained by heat-treating cerium(IV) oxide that is obtained by blowing oxygen or a gas containing oxygen into a suspension obtained by reacting a cerium (III) salt with an alkaline substance in a (OH)(Ce3+) molar ratio of 3 to 30, in an aqueous medium in the presence of an ammonium salt having a non-oxidative anionic component selected from the group consisting of ammonium carbonate, ammonium hydrogen carbonate, and mixtures thereof, the stable slurry has a pH from 5 to 6, and an average surface roughness of the polished glass hard disk platter is from 2.7-3.0 angstrom.
2. The method according to claim 1, wherein a specific surface area of the cerium(IV) oxide particles is 2 to 200 m2g.
3. The method according to claim 1, wherein the cerium (III) salt and the alkaline substance are reacted under an inert gas atmosphere.
4. The method according to claim 1, wherein the cerium (III) salt and the alkaline substance are reacted at an atmospheric pressure.