1. A protective bird apron comprising:
a back covering shaped to cover a back of a bird, the back covering having:
a main body area having a length and a width;
a first lateral section attached to a first side of the main body area and having a length less than the length of the main body area and a width dimensioned to extend away from the main body area and beneath a first wing of the bird; and
a second lateral section attached to a second side of the main body area opposite the first side and having a length less than the length of the main body area and a width dimensioned to extend away from the main body area and beneath a second wing of the bird;
a first securing strap coupled to an outer portion of the first lateral section and to the second side of the main body area;
a second securing strap coupled to an outer portion of the second lateral section and to the first side of the main body area, the first and second securing straps defining a first wing capturing portion, a second wing capturing portion, and a neck capturing portion; and
a shoulder protector coupled to the back covering, disposed to protect shoulders of the bird, and having a width substantially the same or greater than a width of the back covering.
2. The protective bird apron according to claim 1, wherein:
the shoulder protector is removably coupled to the back covering.
3. The protective bird apron according to claim 1, wherein the shoulder protector further comprises:
a neck-securing loop shaped to secure the shoulder protector to a neck of the bird.
4. The protective bird apron according to claim 1, wherein the shoulder protector further comprises:
a substantially V-shaped lower edge.
5. The protective bird apron according to claim 1, wherein the back covering is of a first material and further comprises:
an interior layer insulating the back covering from the bird, the interior layer being of a second material different from the first material.
6. The protective bird apron according to claim 5, further comprising:
an inner layer disposed between the interior layer and the bird.
7. The protective bird apron according to claim 1, wherein the back covering further comprises:
a substantially V-shaped lower edge shaped to accept a tail of the bird.
8. A protective bird apron comprising:
a back covering shaped to cover a back of a bird, the back covering having:
a main body area having a length and a width; and
a pair of opposing lateral sections attached to the main body area at corresponding opposing edges thereof, each lateral section having a length less than the length of the main body area and a width dimensioned to extend beneath respective wings of the bird;
at least one securing strap coupled to an upper portion of the main body area and to an upper portion of at least one of the lateral sections, the main body area, the at least one of the lateral sections, and the at least one securing strap defining at least one shoulder securing area; and
a shoulder protector coupled to the back covering, disposed to protect shoulders of the bird, and having a width substantially the same or greater than a width of the back covering.
9. The protective bird apron according to claim 8, wherein:
the shoulder protector is removably coupled to the back covering.
10. The protective bird apron according to claim 8, wherein the shoulder protector further comprises:
a neck-securing loop shaped to secure the shoulder protector to a neck of the bird.
11. The protective bird apron according to claim 8, wherein the shoulder protector further comprises:
a substantially V-shaped lower edge.
12. The protective bird apron according to claim 8, further comprising:
the back covering being of a first material; and
an interior layer insulating the back covering from the bird, the interior layer being of a second material different from the first material.
13. The protective bird apron according to claim 12, further comprising:
an inner layer disposed between the interior layer and the bird.
14. The protective bird apron according to claim 8, wherein the back covering further comprises:
a substantially V-shaped lower edge shaped to accept a tail of the bird.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for constructing an organic field effect transistor, comprising the steps of:
a) providing a substrate having a gate electrode;
b) providing the substrate with source and drain electrodes; and
c) providing upon the substrate directly from solution, a layer of regioregular, head-to-tail poly 3-hexylthiophene semiconducting polymer, characterized in that said transistor has a high mobility correlating to an improved structural order of the semiconducting polymer layer, said layer having the improved structural order demonstrated by an absorbance of a 0-0 absorption band in an optical spectrum.
2. The process of claim 1, further comprising the step of: d) heat treating the layered substrate at about 150\xb0 C. to 170\xb0 C. for about three minutes in an inert atmosphere.
3. The process of claim 1, wherein the layer is about 20 \u212b to 1 \u03bcm.
4. The process of claim 1, wherein the mobility is about 0.2 cm2V\u22121s\u22121.
5. The process of claim 1, wherein the layer of semiconducting polymer is provided upon the substrate by dip-coating.
6. The process of claim 1, wherein the 0-0 absorption band is greater than about 86% of that of a maximum absorbance for regioregular poly 3-hexylthiophene.
7. A process for constructing an organic field effect transistor, comprising the steps of:
a) providing a substrate having a gate electrode;
b) providing the substrate with source and drain electrodes; and
c) depositing upon the substrate directly from solution, a layer of semiconducting regioregular head-to-tail poly 3-hexylthiophene, characterized in that said transistor has a high mobility of about 0.2 cm2V\u22121s\u22121 correlating to an improved structural order of the regioregular head-to-tail poly 3-hexylthiophene layer, said layer having the improved structural order demonstrated by an absorbance of a 0-0 absorption band in an optical spectrum, wherein the 0-0 absorption band is greater than about 86% of that of a maximum absorbance for regioregular poly 3-hexylthiophene; and
d) heat treating the layered substrate at about 150\xb0 C. to 170\xb0 C. for about three minutes in an inert atmosphere.
8. The process of claim 7, wherein the layer is about 20 \u212b to 1 \u03bcm.
9. A field effect transistor fabricated from the process of claim 1.
10. A field effect transistor, comprising:
a first electrode layer accommodating a source and drain electrode;
a regioregular, head-to-tail poly 3-hexylthiophene semiconducting polymer layer;
an insulating layer;
a second electrode layer accommodating a gate electrode, characterized in that said transistor has a high mobility correlating to an improved structural order of the semiconducting polymer layer, said layer having the improved structural order demonstrated by an absorbance of a 0-0 absorption band in an optical spectrum.
11. The field effect transistor of claim 10, wherein said semiconducting layer has a thickness of about 20 \u212b to 1 \u03bcm.
12. The field effect transistor of claim 10, wherein the mobility is about 0.2 cm2V\u22121s\u22121.
13. The field effect transistor of claim 16, wherein the 0-0 absorption band is greater than about 86% of that of a maximum absorbance for regioregular poly 3-hexylthiophene.
14. An integrated circuit comprising a field effect transistor obtained by a method as claimed in claim 1.