1. A method for generating a financial derivative instrument on an option right to attend a future event, said method implemented on a computer system, the method comprising the steps of:
storing on a first computer, information on one or more future events, said future events are events at which spectators pay to view activities and that have restricted attendance for a fee, said stored information includes details regarding said future events and comprises details regarding an offer to sell contingent rights, said contingent rights provide a right to purchase access at a specified price to said future event upon the occurrence of a future outcome that is uncertain at the time of said offer;
providing a communication link to said first computer to allow potential contingent rights purchasers to access said information associated with said contingent rights offer;
selling, either as a principal or on behalf of a third party, said contingent rights to one or more third parties that accept said offer;
allowing the one or more third parties to trade and re-sell the contingent rights;
maintaining a data warehouse of third party trades and contingent rights holdings; and
running an analytic algorithm against the trade and outstanding position information in the data warehouse for the purpose of generating a financial derivative instrument on the contingent rights.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A polishing pad for mirror-polishing a semiconductor wafer by use of a polishing machine comprising a turn table on which a polishing pad is attached, a unit for feeding a polishing agent onto a surface of the polishing pad, and a mechanism for pressing a semiconductor wafer onto the surface of the polishing pad, wherein the polishing pad comprises:
a top layer formed of a porous soft material;
a bottom layer formed of a rubber elastomer; and
a hard plastic sheet disposed between the top layer and the bottom layer and bonded to the bottom layer.
2. A polishing pad for mirror-polishing a semiconductor wafer according to claim 1, wherein the tensile strength of the hard plastic sheet is 1 MPa or more.
3. A polishing pad for mirror-polishing a semiconductor wafer according to claim 1, wherein the material of the hard plastic sheet is selected from the group of polyethylene terephthalate, polyimide, polyethylene, and polyurethane.
4. A polishing pad for mirror-polishing a semiconductor wafer according to claim 2, wherein the material of the hard plastic sheet is selected from the group of polyethylene terephthalate, polyimide, polyethylene, and polyurethane.
5. A polishing pad for mirror-polishing a semiconductor wafer according to claim 1, wherein the thickness of the hard plastic sheet is 0.02 to 0.2 mm.
6. A polishing pad for mirror-polishing a semiconductor wafer according to claim 2, wherein the thickness of the hard plastic sheet is 0.02 to 0.2 mm.
7. A polishing pad for mirror-polishing a semiconductor wafer according to claim 3, wherein the thickness of the hard plastic sheet is 0.02 to 0.2 mm.
8. A polishing pad for mirror-polishing a semiconductor wafer according to claim 4, wherein the thickness of the hard plastic sheet is 0.02 to 0.2 mm.
9. A polishing pad for mirror-polishing a semiconductor wafer according to claim 1, wherein the t op layer formed of a porous soft material has an Asker C hardness of 80 or less.
10. A polishing pad for mirror-polishing a semiconductor wafer according to claim 1, wherein the bottom layer formed of a rubber elastomer has an Asker C hardness of 15 to 40.
11. A polishing pad for mirror-polishing a semiconductor wafer in a finish polishing process by use of a polishing machine comprising a turn table on which a polishing pad is attached, a unit for feeding a polishing agent onto a surface of the polishing pad, and a mechanism for pressing a semiconductor wafer onto the surface of the polishing pad, wherein the polishing pad comprises:
a top layer formed of a suede-type polishing cloth;
a bottom layer formed of a rubber elastomer; and
a hard plastic sheet disposed between the top layer and the bottom layer and bonded to the bottom layer.
12. A polishing pad for mirror-polishing a semiconductor wafer according to claim 11, wherein the thickness of the hard plastic sheet is 0.1 to 0.4 mm.
13. A polishing pad for mirror-polishing a semiconductor wafer according to claim 11, wherein the bottom layer formed of a rubber elastomer has an Asker C hardness of 20 to 60 .
14. A polishing pad for mirror-polishing a semiconductor wafer according to claim 11, wherein the thickness of the nap layer of the top layer formed of a suede-type polishing cloth is 400 to 800 m.
15. A mirror-polishing method for a semiconductor wafer, wherein a semiconductor wafer is mirror-polished by use of a polishing pad for mirror-polishing a semiconductor wafer according to claim 1.
16. A mirror-polishing method for a semiconductor wafer, wherein a semiconductor wafer is finish-polished by use of a polishing pad for mirror-polishing a semiconductor wafer according to claim 11.
17. A mirror-polishing machine for a semiconductor comprising a turn table on which a polishing pad is attached, a unit for feeding a polishing agent onto a surface of the polishing pad, and a mechanism for pressing a semiconductor wafer onto the surface of the polishing pad, wherein a mirror-polishing pad according to claim 1 is attached to the turn table.
18. A mirror-polishing machine for a semiconductor comprising a turn table on which a polishing pad is attached, a unit for feeding a polishing agent onto a surface of the polishing pad, and a mechanism for pressing a semiconductor wafer onto the surface of the polishing pad, wherein a polishing pad according to claim 11 is attached to the turn table.