1. An aggregate comprising a synthetic CO2-sequestering component wherein the aggregate has a Mohs hardness of 3 or greater.
2. The aggregate of claim 1, wherein the CO2-sequestering component comprises one or more carbonate compounds.
3. The aggregate of claim 2, wherein the one or more carbonate compounds make up at least 50% ww of the aggregate; or at least 90% ww of the aggregate; or at least 98% ww of the aggregate.
4. The aggregate of claim 2, wherein the carbonate compounds comprise magnesium carbonate, calcium carbonate, magnesium calcium carbonate, or a combination thereof.
5. The aggregate of claim 4, wherein the molar ratio of calcium to magnesium in the aggregate is (i) from 11 CaMg to 110 CaMg, or (ii) from 1501 CaMg to 101 CaMg, or (iii) from 21 CaMg to 12 CaMg.
6. The aggregate of claim 1 having carbon isotopic fractionation (\u03b413C) value more negative than \u221210%, optionally more negative than \u221220%.
7. The aggregate of claim 1 that has a bulk density of between 75 lbft3 and 125 lbft3, or between 90 lbft3 and 115 lbft3.
8. The aggregate of claim 2, also comprising a sulfate andor a sulfite, wherein the combined sulfate andor sulfite comprise at least 0.1% ww of the aggregate.
9. A structure comprising the aggregate of claim 1, wherein the structure is a building, a roadway, or a dam.
10. The structure of claim 9, that is a roadway, wherein the roadway sequesters at least 1 ton of CO2 per lane mile of roadway, and wherein the roadway sequesters at least 100 tons of CO2 per lane mile of roadway, or wherein the roadway sequesters at least 1000 tons of CO2 per lane mile of roadway.
11. A method of producing aggregate comprising:
(i) precipitating a CO2-sequestering carbonate compound composition from a divalent cation-containing water to form a precipitate; and
(ii) processing the CO2-sequestering carbonate compound composition under conditions that produce aggregate with a Mohs hardness of at least 3 Mohs.
12. The method of claim 11, wherein producing the aggregate comprises; either
(i) subjecting the precipitate of claim 11 to elevated temperature, elevated pressure, or a combination thereof, optionally wherein said elevated temperature, elevated pressure, or combination thereof is produced by an extruder; or
(ii) subjecting the precipitate of claim 11 to exposure to the open environment and mechanically processing, optionally wherein mechanically processing comprises compression applied with a steel roller or a press; or
(iii) producing aggregate of a predetermined size and shape.
13. The method of claim 11, further comprising contacting the divalent cation-containing water with CO2 from an industrial waste gas stream, optionally wherein the industrial waste gas stream is a flue gas from a power plant or a cement plant, and wherein the power plant is a coal-fired power plant.
14. The method of claim 11, further comprising contacting the divalent cation-containing water with CO2 from the combustion of a fossil fuel, wherein the fossil fuel comprises natural gas or coal, and wherein the fossil fuel comprises coal.
15. The method of claim 11, wherein the divalent cation-containing water comprises divalent cations from a saltwater, wherein the saltwater comprises seawater or brine.
16. The method of claim 11, wherein the processing of the precipitate comprises either;
(i) combining the precipitate with a cementitous material and water, and allowing the combination to set to provide a solidified material; or
(ii) mechanically spreading the precipitate, irrigating the spread precipitate, and compacting the spread precipitate until a desired depth and desired chemical and mechanical properties are obtained;
and further comprising breaking up the solidified material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a mask for use in a lithographic process, the method comprising:
forming a planarizing layer comprising a material that is anti-reflective and has a low thermal
expansion on a substrate that comprises a low thermal expansion material; and
depositing a plurality of reflective layers in contact with the planarizing layer.
2. The method of claim 1, wherein forming a planarizing layer comprising a material that is anti-reflective and has a low thermal expansion on a substrate comprises forming the planarizing layer on a substrate that comprises a low thermal expansion glass or a low thermal expansion glass ceramic.
3. The method of claim 1, wherein forming a planarizing layer comprising a material that is anti-reflective and has a low thermal expansion on a substrate comprises forming the planarizing layer on a substrate formed from a material with a coefficient of thermal expansion of less than approximately 1.0 ppm\xb0 C.
4. The method of claim 1, wherein forming a planarizing layer comprising a material that is anti-reflective and has a low thermal expansion on a substrate comprises forming the planarizing layer on a substrate formed from a material with a coefficient of thermal expansion of less than approximately 0.5 ppm\xb0 C.
5. The method of claim 1, wherein forming a planarizing layer comprising a material that is anti-reflective and has a low thermal expansion on a substrate comprises forming the planarizing layer on a substrate formed from a material with a coefficient of thermal expansion of less than approximately 0.1 ppm\xb0 C.
6. The method of claim 1, wherein forming a planarizing layer comprising a material that is anti-reflective and has a low thermal expansion on a substrate comprises coating the planarizing layer, depositing the planarizing layer by chemical vapor deposition, or depositing the planarizing layer by physical vapor deposition.
7. The method of claim 1, wherein forming a planarizing layer comprising a material that is anti-reflective and has a low thermal expansion on a substrate comprises forming the planarizing layer to a thickness ranging from approximately 1000 \u212b to approximately 10,000 \u212b.
8. The method of claim 1, wherein forming a planarizing layer comprising a material that is anti-reflective and has a low thermal expansion on a substrate comprises forming the planarizing layer with a peak-to-valley surface flatness of less than approximately 20 \u212b.
9. The method of claim 1, wherein forming a planarizing layer comprising a material that is anti-reflective and has a low thermal expansion on a substrate comprises forming the planarizing layer with a peak-to-valley surface flatness of less than approximately 10 \u212b.
10. The method of claim 1, wherein forming a planarizing layer comprising a material that is anti-reflective and has a low thermal expansion on a substrate comprises forming the planarizing layer with a peak-to-valley surface flatness of less than approximately 50 \u212b.
11. A method of fabricating a mask for use in a lithographic process, the method comprising:
forming a layer of material that is anti-reflective and has a low thermal expansion over a layer of ultra-low thermal expansion glass having a coefficient of thermal expansion of less than approximately 0.1 ppm\xb0 C., wherein the layer of material that is anti-reflective and has a low thermal expansion has a peak-to-valley surface flatness of approximately 20 \u212b; and
depositing a plurality of reflective layers in contact with the layer of material that is anti-reflective and has a low thermal expansion.
12. The method of claim 11, wherein forming a layer of material that is anti-reflective and has a low thermal expansion over a layer of ultra-low thermal expansion glass comprises forming the layer of material that is anti-reflective and has a low thermal expansion to a thickness ranging from approximately 1000 \u212b to approximately 10,000 \u212b.
13. The method of claim 11, wherein forming a layer of material that is anti-reflective and has a low thermal expansion over a layer of ultra-low thermal expansion glass comprises forming the layer of material that is anti-reflective and has a low thermal expansion to a peak-to-valley surface flatness of less than approximately 10 \u212b.
14. A mask for use in a lithographic process, comprising:
a planarizing layer in contact with a surface of a substrate, wherein the planarizing layer
comprises a material that is anti-reflective and has a low thermal expansion; and a plurality of reflective layers in contact with the planarizing layer.
15. The mask of claim 14, wherein the substrate comprises a low thermal expansion glass or a low thermal expansion glass ceramic.
16. The mask of claim 14, wherein the substrate comprises a material with a coefficient of thermal expansion of less than approximately 1.0 ppm\xb0 C.
17. The mask of claim 14, wherein the substrate comprises a material with a coefficient of thermal expansion of less than approximately 0.5 ppm\xb0 C.
18. The mask of claim 14, wherein the substrate comprises a material with a coefficient of thermal expansion of less than approximately 0.1 ppm\xb0 C.
19. The mask of claim 14, wherein the planarizing layer has a thickness ranging from approximately 1000 \u212b to approximately 10,000 \u212b.
20. The mask of claim 14, wherein the planarizing layer has a peak-to-valley surface flatness of less than approximately 20 \u212b.
21. The mask of claim 14, wherein the planarizing layer has a peak-to-valley surface flatness of less than approximately 10 \u212b.
22. The mask of claim 14, wherein the planarizing layer has a peak-to-valley surface flatness of less than approximately 50 \u212b.
23. A mask for use in a lithographic process, comprising:
a layer of material that is anti-reflective and has a low thermal expansion in contact with a surface of an ultra-low thermal expansion material, wherein the layer of material that is anti-reflective and has a low thermal expansion has a peak-to-valley surface flatness of approximately 20 \u212b; and
a plurality of reflective layers in contact with the layer of material that is anti-reflective and has a low thermal expansion.
24. The mask of claim 23, wherein the ultra-low thermal expansion material comprises an ultra-low thermal expansion glass or an ultra-low thermal expansion glass ceramic.
25. The mask of claim 23, wherein the ultra-low thermal expansion material comprises a material with a coefficient of thermal expansion of less than approximately 0.1 ppm\xb0 C.
26. The mask of claim 23, wherein the layer of material that is anti-reflective and has a low thermal expansion has a thickness ranging from approximately 1000 \u212b to approximately 10,000 \u212b.
27. The mask of claim 23, wherein the layer of material that is anti-reflective and has a low thermal expansion has a peak-to-valley surface flatness of less than approximately 10 \u212b.