We claim:
1. A friction clutch comprising:
a housing having an axis of rotation;
pressure plate connected to said housing for rotation in common about said axis;
a force exerting arrangement supported against the housing and the pressure plate;
an actuator mechanism which acts on said force exerting arrangement to load said pressure plate axially with respect to said housing; and
a bearing arrangement for supporting said actuator mechanism axially with respect to said housing so that said actuator mechanism is prevented from moving in either of two axial directions with respect to said housing.
2. A friction clutch as in claim 1 further comprising a retaining element which cooperates with said housing to form an opening, and a locking element which is received in said opening to support said bearing arrangement in one axial direction with respect to said housing.
3. A friction clutch as in claim 2 wherein said retaining element supports the bearing arrangement in the other axial direction with respect to said housing.
4. A friction clutch as in claim 3 wherein said retaining element is formed with a support section which supports the bearing arrangement in the other axial direction with respect to the housing.
5. A friction clutch as in claim 1 further comprising a plurality of pins which support said bearing arrangement axially with respect to said housing both axial directions.
6. A friction clutch as in claim 1 wherein said bearing arrangement comprises a bearing component formed with a thread which engages a thread formed on said housing.
7. A friction clutch as in claim 1 further comprising
a first retaining element fixed to said housing and supporting said bearing arrangement in a first axial direction; and
a second retaining element fixed to said housing and supporting said bearing arrangement in a second axial direction.
8. A friction clutch as in claim 7 wherein at least one of said retaining elements is formed with a thread which engages a thread formed on said housing.
9. A friction clutch as in claim 7 wherein one of said retaining elements is latched to said housing.
10. A friction clutch as in claim 9 wherein one of said retaining elements is formed with retaining tongues which extend behind the other retaining element.
11. A friction clutch as in claim 7 wherein said bearing arrangement comprises a first sliding bearing element supported axially on the first retaining element and a second sliding bearing element supported axially on the second retaining element.
12. A friction clutch as in claim 11 wherein at least one of said sliding bearing elements comprises a radial support area.
13. A friction clutch as in claim 11 wherein said bearing arrangement further comprises a lubricant tight encapsulation of said first and second bearing elements.
14. A friction clutch as in claim 1 further comprising
a retaining element which is permanently axially connected to said housing, and
a locking element provided on said bearing arrangement, said locking element having a first axial side which is supported against said housing and a second axial side which is supported against said retaining element.
15. A friction clutch as in claim 14 wherein said retaining element is connected to said housing by one of riveting, welding, brazing, adhesive bonding, deformation, and press fitting.
16. A friction clutch as in claim 1 further comprising an insert element which is permanently attached to the housing and supports said bearing arrangement in two axial directions.
17. A friction clutch as in claim 16 wherein said insert element comprises an axial stop which supports said bearing arrangement in a first axial direction and a locking element which supports the bearing arrangement in a second axial direction.
18. A friction clutch as in claim 1 wherein said friction clutch is a dual clutch having a first clutch area and a second clutch area, each said clutch area comprising a pressure plate and a force-exerting arrangement.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor apparatus, comprising:
a p-type doped layer;
an n-type doped layer; and
an internal electrical connection layer deposited between the p-type doped layer and the n-type doped layer, and electrically coupled between the p-type doped layer and the n-type doped layer;
wherein the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer;
wherein the internal electrical connection layer is a defect-induced internal electrical connection layer, which provides a first defect density with respect to a second defect density at a growth surface of the defect-induced internal electrical connection layer, the first defect density being at least five times the second defect density, and the defect-induced internal electrical connection layer having a thickness less than or equal to 100 nanometers.
2. The apparatus of claim 1, wherein a reverse voltage drop is less than or equal to 1 volt when the p-n junction formed by the p-type doped layer and the n-type doped layer is reversely driven.
3. The apparatus of claim 1, wherein the internal electrical connection layer further comprises a carbon element with a concentration greater than 1017 atomscm3.
4. The apparatus of claim 1, wherein the p-type doped layer comprises a carbon element with a concentration greater than 1017 atomscm3.
5. The apparatus of claim 1, wherein the n-type doped layer comprises a carbon element with a concentration greater than 1017 atomscm3.
6. The apparatus of claim 1, wherein the internal electrical connection layer further comprises magnesium with a concentration greater than 1017 atomscm3.
7. The apparatus of claim 1, wherein the internal electrical connection layer does not comprise a group III element.
8. The apparatus of claim 1, wherein the internal electrical connection layer has a thickness less than or equal to 100 nanometers.
9. The apparatus of claim 1, wherein the p-type doped layer has a p-dopant concentration of 1018-1021 atomscm3.
10. The apparatus of claim 1, wherein the n-type doped layer has an n-dopant concentration of 1018-1021 atomscm3.
11. The apparatus of claim 1 comprising at least two semiconductor devices, wherein the p-type doped layer is deposited in one of the semiconductor devices, the n-type doped layer is deposited in another of the semiconductor devices, and the internal electrical connection layer is deposited between two of the semiconductor devices to electrically couple said two semiconductor devices, and the p-type doped layer and the n-type doped layer include a group III nitride.
12. The apparatus of claim 11, wherein the semiconductor device is a light-emitting diode, a photodetector, a solar cell, a transistor, a diode, or a laser diode.
13. The apparatus of claim 1, wherein the internal electrical connection layer is a discontinuous layer.
14. The apparatus of claim 1, wherein the internal electrical connection layer is a non-single crystal layer.
15. A semiconductor apparatus, comprising:
a p-type doped layer;
an n-type doped layer; and
an internal electrical connection layer deposited between the p-type doped layer and the n-type doped layer, and electrically coupled between the p-type doped layer and the n-type doped layer;
wherein the internal electrical connection layer includes a carbon element with a concentration greater than 1017 atomscm3;
wherein the internal electrical connection layer is a defect-induced internal electrical connection layer, which provides a first defect density with respect to a second defect density at a growth surface of the defect-induced internal electrical connection layer, the first defect density being at least five times the second defect density, and the defect-induced internal electrical connection layer having a thickness less than or equal to 100 nanometers.
16. The apparatus of claim 15, wherein a reverse voltage drop is less than or equal to 1 volt when the p-n junction formed by the p-type doped layer and the n-type doped layer is reversely driven.
17. The apparatus of claim 15, wherein the p-type doped layer comprises a carbon element with a concentration greater than 1017 atomscm3.
18. The apparatus of claim 15, wherein the n-type doped layer comprises a carbon element with a concentration greater than 1017 atomscm3.
19. The apparatus of claim 15, wherein the internal electrical connection layer further comprises magnesium with a concentration greater than 1017 atomscm3.
20. The apparatus of claim 15, wherein the internal electrical connection layer does not comprise a group III element.
21. The apparatus of claim 15, wherein the internal electrical connection layer has a thickness less than or equal to 100 nanometers.
22. The apparatus of claim 15, wherein the p-type doped layer has a p-dopant concentration of 1018-1021 atomscm3.
23. The apparatus of claim 15, wherein the n-type doped layer has an n-dopant concentration of 1018-1021 atomscm3.
24. The apparatus of claim 15 comprises at least two semiconductor devices, wherein the p-type doped layer is deposited in one of the semiconductor devices, the n-type doped layer is deposited in another of the semiconductor devices, and the internal electrical connection layer is deposited between two of the semiconductor devices to electrically couple said two semiconductor devices, and the p-type doped layer and the n-type doped layer include a group III nitride.
25. The apparatus of claim 24, wherein the semiconductor device is a light-emitting diode, a photodetector, a solar cell, a transistor, a diode, or a laser diode.
26. The apparatus of claim 15, wherein the internal electrical connection layer is a discontinuous layer.
27. The apparatus of claim 15, wherein the internal electrical connection layer is a non-single crystal layer.
28. The apparatus of claim 15, wherein the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer.
29. A semiconductor apparatus, comprising:
a p-type doped layer;
an n-type doped layer; and
a low-temperature internal electrical connection layer deposited between the p-type doped layer and the n-type doped layer, and electrically coupled between the p-type doped layer and the n-type doped layer;
wherein the low-temperature internal electrical connection layer is formed at a temperature lower than a temperature at which the p-type doped layer is formed, and lower than a temperature at which the n-type doped layer is formed;
wherein the internal electrical connection layer is a defect-induced internal electrical connection layer, which provides a first defect density with respect to a second defect density at a growth surface of the defect-induced internal electrical connection layer, the first defect density being at least five times the second defect density, and the defect-induced internal electrical connection layer having a thickness less than or equal to 100 nanometers.
30. The apparatus of claim 29, wherein a reverse voltage drop is less than or equal to 1 volt when the p-n junction formed by the p-type doped layer and the n-type doped layer is reversely driven.
31. The apparatus of claim 29, wherein the internal electrical connection layer further comprises a carbon element with a concentration greater than 1017 atomscm3.
32. The apparatus of claim 29, wherein the p-type doped layer comprises a carbon element with a concentration greater than 1017 atomscm3.
33. The apparatus of claim 29, wherein the n-type doped layer comprises a carbon element with a concentration greater than 1017 atomscm3.
34. The apparatus of claim 29, wherein the internal electrical connection layer further comprises magnesium with a concentration greater than 1017 atomscm3.
35. The apparatus of claim 29, wherein the internal electrical connection layer does not comprise a group III element.
36. The apparatus of claim 29, wherein the internal electrical connection layer has a thickness less than or equal to 100 nanometers.
37. The apparatus of claim 29, wherein the p-type doped layer has a p-dopant concentration of 1018-1021 atomscm3.
38. The apparatus of claim 29, wherein the n-type doped layer has an n-dopant concentration of 1018-1021 atomscm3.
39. The apparatus of claim 29 comprises at least two semiconductor devices, wherein the p-type doped layer is deposited in one of the semiconductor devices, the n-type doped layer is deposited in another of the semiconductor devices, and the internal electrical connection layer is deposited between two of the semiconductor devices to electrically couple said two semiconductor devices, and the p-type doped layer and the n-type doped layer include group III nitride.
40. The apparatus of claim 39, wherein the semiconductor device is a light-emitting diode, a photodetector, a solar cell, a transistor, a diode, or a laser diode.
41. The apparatus of claim 29, wherein the internal electrical connection layer is a discontinuous layer.
42. The apparatus of claim 29, wherein the internal electrical connection layer is a non-single crystal layer.
43. The apparatus of claim 29, wherein the low-temperature internal electrical connection layer comprises oxide, nitride, silicide, oxynitride, carbonitride, carbide, carbon, silicon, metal, or a combination thereof.
44. The apparatus of claim 29, wherein the low-temperature internal electrical connection layer comprises a metal-based compound that is non-stoichiometric with an excess metal element.
45. The apparatus of claim 44, wherein the low-temperature internal electrical connection layer further comprises a layer made of oxide, nitride, silicide, oxynitride, carbonitride, carbide, carbon, silicon, metal, or a combination thereof.
46. The apparatus of claim 29, wherein the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer.
47. A semiconductor apparatus, comprising:
a p-type doped layer;
an n-type doped layer;
an internal electrical connection layer deposited between the p-type doped layer and the n-type doped layer, and electrically coupled between the p-type doped layer and the n-type doped layer; and
at least two semiconductor devices, wherein the p-type doped layer is deposited in one of the semiconductor devices, the n-type doped layer is deposited in another of the semiconductor devices, and the internal electrical connection layer is deposited between two of the semiconductor devices to electrically couple said two semiconductor devices, and the p-type doped layer and the n-type doped layer include a group III nitride;
wherein the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer.
48. A semiconductor apparatus, comprising:
a p-type doped layer;
an n-type doped layer;
an internal electrical connection layer deposited between the p-type doped layer and the n-type doped layer, and electrically coupled between the p-type doped layer and the n-type doped layer; and
at least two semiconductor devices, wherein the p-type doped layer is deposited in one of the semiconductor devices, the n-type doped layer is deposited in another of the semiconductor devices, and the internal electrical connection layer is deposited between two of the semiconductor devices to electrically couple said two semiconductor devices, and the p-type doped layer and the n-type doped layer include a group III nitride;
wherein the internal electrical connection layer includes a carbon element with a concentration greater than 1017 atomscm3.
49. A semiconductor apparatus, comprising:
a p-type doped layer;
an n-type doped layer;
a low-temperature internal electrical connection layer deposited between the p-type doped layer and the n-type doped layer, and electrically coupled between the p-type doped layer and the n-type doped layer; and
at least two semiconductor devices, wherein the p-type doped layer is deposited in one of the semiconductor devices, the n-type doped layer is deposited in another of the semiconductor devices, and the internal electrical connection layer is deposited between two of the semiconductor devices to electrically couple said two semiconductor devices, and the p-type doped layer and the n-type doped layer include group III nitride;
wherein the low-temperature internal electrical connection layer is formed at a temperature lower than a temperature at which the p-type doped layer is formed, and lower than a temperature at which the n-type doped layer is formed.