1. A lithography apparatus, comprising:
an illumination system configured to condition a beam of radiation;
a patterning device configured to pattern the beam of radiation, the patterning device comprising,
a control system configured to convert analog signals having respective first voltage values to corresponding differential control signals having second, higher voltage values, and
an array of individually controllable elements, corresponding ones of the individually controllable elements in the array of individually controllable elements being configured to actuate based on receiving a corresponding one of the differential control signals; and
a projection system configured to project the patterned beam onto a target area of a substrate.
2. The lithographic apparatus of claim 1, wherein the control system comprises:
a plurality of pins that receive a respective one of the analog signals; and
a plurality of differential amplifiers coupled to each of the plurality of pins, each of the differential amplifiers being coupled to a respective column of individually controllable elements in the array of individually controllable elements.
3. The lithographic apparatus of claim 2, wherein the control system is configured to generate a row address signal that controls which row of the respective column receives the corresponding one of the differential control signals.
4. The lithographic apparatus of claim 3, wherein each of the single or multiple stage switched-capacitor sample and hold amplifier circuits comprise:
a switched-capacitor portion;
a bias power source coupled to the switched-capacitor portion; and
first and second operational amplifiers coupled to the switched capacitor portion.
5. The lithographic apparatus of claim 4, wherein each of the single or multiple stage switched-capacitor sample and hold amplifier circuits further comprise:
first and second capacitors coupled to feedback loops of respective ones of the first and second operational amplifiers; and
first and second switches positioned in respective ones of the feedback loops, the first and second switches configured to move between a reset position and a hold position.
6. The lithographic apparatus of claim 2, wherein each of the differential amplifiers comprises a single stage or multiple stage switched-capacitor sample and hold amplifier circuit.
7. The lithographic apparatus of claim 2, wherein each of the single or multiple stage switched-capacitor sample and hold amplifier circuits comprise:
a push-pull output stage; and
a non-linear push-pull boost circuit.
8. The lithographic apparatus of claim 2, wherein the patterning device further comprises driving sections each coupled to respective ones of the individually controllable elements, the driving sections comprising:
first and second field effect transistors having gates that receive a respective portion of the control signal from a respectively selected row select line;
first and second electrodes coupled to respective ones of the first and second field effect transistors; and
first and second capacitors coupled between respective ones of the first and second field effect transistors and the first and second electrodes,
wherein the first and second capacitors are configured to store a charge correlating to the received respective portion of the differential control signal during a programming mode, and
wherein the first and second electrodes are configured to actuate movement of a corresponding one of the individually controllable elements based on the respective stored charges during an exposure mode.
9. The lithographic apparatus of claim 8, wherein the patterning device includes four quadrants and wherein:
bottom plates of the first capacitors in each of the driving sections of each of the four quadrants are coupled together; and
bottom plates of the second capacitors in each of the driving sections of each of the four quadrants are coupled together.
10. The lithographic apparatus of claim 1, wherein the array comprises at least about 10 million of the individually controllable elements.
11. The lithographic apparatus of claim 1, wherein the individually controllable elements comprise SiGe mirrors.
12. The lithographic apparatus of claim 1, wherein the individually controllable elements comprises mirrors having about a 8 \u03bcm width and length.
13. The lithographic apparatus of claim 1, further comprising:
first and second electrodes associated with each of the individually controllable elements, wherein each of the individually controllable elements comprises a bias electrode, such that the bias electrode receives a slow attack, fast decay negative raised cosine pulse during energizing of the driving electrodes to produce fast resonant free mirror position settling in within about 2 \u03bcs.
14. The lithographic apparatus of claim 1, wherein the patterning device further comprises a testing system coupled to the array of individually controllable devices and the control system.
15. The lithographic apparatus of claim 14, wherein the testing system is configured to test the control system.
16. The lithographic apparatus of claim 14, wherein the testing system is configured to test the individually controllable elements.
17. The lithographic apparatus of claim 1, wherein the patterning device further comprises a temperature sensor or an array of temperature sensors.
18. The lithographic apparatus of claim 1, the patterning device further comprising a plurality of bias electrodes, each of the bias electrode being coupled to a respective one of the individually controllable elements.
19. The lithographic apparatus of claim 18, wherein the bias electrodes are coupled together.
20. A device manufacturing method, comprising:
generating differential control signals having respective first voltages from analog input signals having second, lower voltages;
controlling respective ones of individually controllable elements within an array of individually controllable elements using corresponding ones of the differential control signals;
patterning a beam of radiation using the array of individually controllable elements; and
projecting the patterned beam onto a target portion of a substrate.
21. A patterning device, comprising:
a control system configured to convert analog signals having respective first voltage values to corresponding differential control signals having second, higher voltage values, and
an array of individually controllable elements, corresponding ones of the individually controllable elements in the array of individually controllable elements being configured to actuate based on receiving a corresponding one of the differential control signals.
22. The patterning device of claim 21, wherein the control system comprises:
a plurality of pins that receive a respective one of the analog signals; and
a plurality of differential amplifiers coupled to each of the plurality of pins, each of the differential amplifiers being coupled to a respective column of individually controllable elements in the array of individually controllable elements.
23. The patterning device of claim 22, wherein the control system is configured to generate a row address signal that controls which row of the respective column receives the corresponding one of the differential control signals.
24. The patterning device of claim 23, wherein each of the single or multiple stage switched-capacitor sample and hold amplifier circuits comprise:
a switched-capacitor portion;
a bias power source coupled to the switched-capacitor portion; and
first and second operational amplifiers coupled to the switched capacitor portion.
25. The patterning device of claim 24, wherein each of the single or multiple stage switched-capacitor sample and hold amplifier circuits further comprise:
first and second capacitors coupled to feedback loops of respective ones of the first and second operational amplifiers; and
first and second switches positioned in respective ones of the feedback loops, the first and second switches configured to move between a reset position and a hold position.
26. The patterning device of claim 22, wherein each of the differential amplifiers comprises a single stage or multiple stage switched-capacitor sample and hold amplifier circuit.
27. The patterning device of claim 22, wherein each of the single or multiple stage switched-capacitor sample and hold amplifier circuits comprise:
a push-pull output stage; and
a non-linear push-pull boost circuit.
28. The patterning device of claim 22, further comprising driving sections each coupled to respective ones of the individually controllable elements, the driving sections comprising:
first and second field effect transistors having gates that receive a respective portion of the control signal from a respectively selected row select line;
first and second electrodes coupled to respective ones of the first and second field effect transistors; and
first and second capacitors coupled between respective ones of the first and second field effect transistors and the first and second electrodes,
wherein the first and second capacitors are configured to store a charge correlating to the received respective portion of the differential control signal during a programming mode, and
wherein the first and second electrodes are configured to actuate movement of a corresponding one of the individually controllable elements based on the respective stored charges during an exposure mode.
29. The patterning device of claim 28, comprising four quadrants and wherein:
bottom plates of the first capacitors in each of the driving sections of each of the four quadrants are coupled together; and
bottom plates of the second capacitors in each of the driving sections of each of the four quadrants are coupled together.
30. The patterning device of claim 21, wherein the array comprises at least about 10 million of the individually controllable elements.
31. The patterning device of claim 21, wherein the individually controllable elements comprise SiGe mirrors.
32. The patterning device of claim 31, wherein the individually controllable elements comprises mirrors having about a 8 \u03bcm width and length.
33. The patterning device of claim 31, further comprising:
first and second electrodes associated with each of the individually controllable elements, wherein each of the individually controllable elements comprises a bias electrode, such that the bias electrode receives a slow attack, fast decay negative raised cosine pulse during energizing of the driving electrodes to produce fast resonant free mirror position settling in within about 2 \u03bcs.
34. The patterning device of claim 21, further comprising a testing system coupled to the array of individually controllable devices and the control system.
35. The patterning device of claim 34, wherein the testing system is configured to test the control system.
36. The patterning device of claim 34, wherein the testing system is configured to test the individually controllable elements.
37. The patterning device of claim 21, further comprising a temperature sensor or an array of temperature sensors.
38. The patterning device of claim 21, further comprising a plurality of bias electrodes, each of the bias electrode being coupled to a respective one of the individually controllable elements.
39. The patterning device of claim 38, wherein the bias electrodes are coupled together.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for impregnating a molecular sieve primary catalyst with an aromatic co-catalyst, the method comprising:
contacting the molecular sieve primary catalyst having a porous framework structure with a combination of from at least 50 wt % to about 99.9 wt % of an aromatic co-catalyst and from about 0.1 wt % to less than 50 wt % of a polar impregnation agent containing one or more heteroatoms selected from the group consisting of nitrogen, oxygen, sulfur, phosphorus, and boron, under conditions sufficient to impregnate the porous framework structure of the primary catalyst with the aromatic co-catalyst, thus forming an integrated catalyst system,
removing at least a portion of the polar impregnation agent from the porous framework structure by further thermally treating the integrated catalyst system at a treatment temperature from about 275\xb0 C. to about 500\xb0 C., but higher than the temperature sufficient to impregnate the porous framework structure, for a treatment time of at least about 10 minutes;
wherein the molecular sieve primary catalyst (i) has an 8-membered ring porous framework structure, (ii) has a porous framework structure that is defined by a pore size not greater than 5.0 Angstroms and that exhibits an AEI framework type, a CHA framework type, or both, or (iii) has both (i) and (ii); and
wherein the integrated catalyst system contains within its porous framework structure at least 85 wt % of the aromatic co-catalyst and not more than 15 wt % of the polar impregnation agent, based on thermally programmed oxidation analysis, carbon nuclear magnetic resonance analysis, or both.
2. The method of claim 1, wherein one or more of the following are satisfied:
(a) the combination contains from about 85 wt % to about 99.5 wt % of the aromatic co-catalyst and from about 0.5 wt % to about 15 wt % of the polar impregnation agent;
(b) the aromatic co-catalyst is selected from the group consisting of benzene, toluene, xylene, ethylbenzene, methylethylbenzene, and combinations thereof;
(c) the polar impregnation agent is selected from the group consisting of water (vapor); ammonia; hydrogen sulfide; hydroxylamine; a C1-C5 alcohol, a C1-C5 diol, an amine compound NR3, where each R group is independently hydrogen or a C1-C5 hydrocarbon; a hydroxy-amino-compound R2N\u2014R\u2032\u2014OH, where each R group is independently hydrogen or a C1-C5 hydrocarbon, and R\u2032 is a C1-C5 hydrocarbon; a thio-amino-compound R2N\u2014R\u2032\u2014SH, where each R group is independently hydrogen or a C1-C5 hydrocarbon, and R\u2032 is a C1-C5 hydrocarbon; a hydroxy-thio-compound RS\u2014R\u2032\u2014OH, where each R group is independently hydrogen or a C1-C5 hydrocarbon, and R\u2032 is a C1-C5 hydrocarbon; a boron compound BR3, where each R group is independently hydrogen or a C1-C5 hydrocarbon; mixtures thereof; and reaction products thereof;
(d) the molecular sieve primary catalyst has both (i) and (ii) and comprises a silicoaluminophosphate, an aluminophosphate, or a metal-modified version thereof; and
(e) the conditions sufficient to impregnate the porous framework structure of the primary catalyst with the aromatic co-catalyst comprise a temperature from about 200\xb0 C. to about 450\xb0 C., a pressure from about 250 psig to about 3000 psig, and an exposure time of at least about 3 minutes.
3. The method of claim 2, wherein (a) and (e) are satisfied, wherein the aromatic co-catalyst comprises toluene andor 2,3-dimethyl-2 butene, wherein the polar impregnation agent comprises methanol, ethanol, diisopropylethylamine, water, or ammonia, and wherein the molecular sieve is a silicoaluminophosphate molecular sieve having both AEI and CHA framework-type character.
4. The method of claim 1, wherein the removal step takes place in an inert gas atmosphere.