1. A semiconductor package, comprising:
a first semiconductor chip having an upper surface;
a second semiconductor chip having an upper surface and an opposing lower surface, the lower surface of the second chip being positioned on the upper surface of the first chip to define an exposed portion of the upper surface of the first chip, the first chip further including a first plurality of bond pads disposed on the exposed portion, and the second chip further including a second plurality of bond pads disposed on the upper surface of the second chip;
a plurality of interconnections that extend from the first plurality of bond pads to the second plurality of bond pads, the interconnections being disposed on selected portions of the first and second chips to electrically couple the first and second chips; and
a plurality of castellations disposed on selected portions of the first chip that extend outwardly from the first plurality of bond pads to form leadless inputoutput locations for the package.
2. The semiconductor package according to claim 1 wherein the second semiconductor chip is further comprised of a peripheral surface that extends between the upper and the lower surface, and further wherein the plurality of interconnections disposed on selected portions of the first and second chips extend inwardly along the upper surface of the first chip from the first plurality of bond pads and extend upwardly along the peripheral surface to the second plurality of bond pads.
3. The semiconductor package according to claim 1 wherein the first semiconductor chip is further comprised of a lower surface having a lower edge, the lower surface opposing the upper surface and having a peripheral surface that extends between the upper and the lower surfaces.
4. The semiconductor package according to claim 3 wherein the plurality of castellations is further comprised of a plurality of planar members that extend upwardly from the lower edge and along the peripheral surface to the first plurality of bond pads.
5. The semiconductor package according to claim 3 wherein the plurality of castellations is further comprised of a plurality of semi-circular members each having an axis that is approximately parallel to the peripheral surface that extend inwardly into the peripheral surface and upwardly from the lower edge to the first plurality of bond pads.
6. The semiconductor package of claim 1, further comprising a dielectric layer interposed between the plurality of interconnections and the first and second chips.
7. The semiconductor package of claim 1, further comprising a dielectric layer interposed between the plurality of castellations and the first chip.
8. The semiconductor package of claim 1, further comprising a dielectric layer disposed on the second chip that substantially encapsulates the second chip and extends onto at least a portion of the first chip.
9. The semiconductor package according to claim 3, further comprising an insulating layer disposed on the lower surface of the first chip.
10. The semiconductor package according to claim 9, wherein the insulating layer is comprised of a dielectric polymer.
11. The semiconductor package according to claim 9, wherein the insulating layer is comprised of a glass substrate.
12. The semiconductor package of claim 1, further comprising an insulating layer interposed between the first and second chips.
13. The semiconductor package according to claim 12, wherein the insulating layer is further comprised of a dielectric adhesive.
14. The semiconductor package according to claim 12, wherein the insulating layer is further comprised of a dielectric polymer adhesively joined to the upper surface of the first chip and the lower surface of the second chip.
15. The semiconductor package according to claim 12, wherein the insulating layer is further comprised of a glass substrate adhesively joined to the upper surface of the first chip and the lower surface of the second chip.
16. The semiconductor package according to claim 12, wherein the insulating layer is further comprised of a self-adhering dielectric film.
17. The semiconductor package according to claim 1 wherein the plurality of interconnections are further comprised of a plurality of metallic films.
18. The semiconductor package according to claim 17 wherein the plurality of metallic films are comprised of aluminum.
19. The semiconductor package according to claim 17 wherein the plurality of metallic films are comprised of copper.
20. The semiconductor package according to claim 17 wherein the plurality of metallic films are comprised of a refractory metal.
21. The semiconductor package according to claim 1 wherein the plurality of interconnections further comprises a plurality of bonding wires that extend from the first plurality of bond pads to the second plurality of bond pads.
22. The semiconductor package according to claim 1 wherein the plurality of castellations are further comprised of a plurality of metallized films.
23. The semiconductor package according to claim 22 wherein the plurality of metallic films are comprised of aluminum.
24. The semiconductor package according to claim 22 wherein the plurality of metallic films are comprised of copper.
25. The semiconductor package according to claim 22 wherein the plurality of metallic films are comprised of a refractory metal.
26. A semiconductor package, comprising:
a first semiconductor chip having an upper surface;
a second semiconductor chip having an upper surface and an opposing lower surface, the lower surface of the second chip being positioned on the upper surface of the first chip to define an exposed portion of the upper surface of the first chip, the first chip further including a first plurality of bond pads disposed on the exposed portion, and the second chip further including a second plurality of bond pads disposed on the upper surface of the second chip;
a plurality of wire bond elements that extend from the first plurality of bond pads to the second plurality of bond pads to electrically couple the first and second chips; and
a plurality of castellations disposed on selected portions of the first chip that extend outwardly from the first plurality of bond pads to form leadless inputoutput locations for the package.
27. The semiconductor package according to claim 26 wherein the first semiconductor chip is further comprised of a lower surface having a lower edge, the lower surface opposing the upper surface and having a peripheral surface that extends between the upper and the lower surfaces.
28. The semiconductor package according to claim 27 wherein the plurality of castellations is further comprised of a plurality of planar members that extend upwardly from the lower edge and along the peripheral surface to the first plurality of bond pads.
29. The semiconductor package according to claim 27 wherein the plurality of castellations is further comprised of a plurality of semi-circular members each having an axis that is approximately parallel to the peripheral surface that extend inwardly into the peripheral surface and upwardly from the lower edge to the first plurality of bond pads.
30. The semiconductor package of claim 26, further comprising a dielectric layer interposed between the plurality of castellations and the first chip.
31. The semiconductor package of claim 26, further comprising a dielectric layer disposed on the second chip that substantially encapsulates the second chip and extends onto at least a portion of the first chip.
32. The semiconductor package according to claim 27, further comprising an insulating layer disposed on the lower surface of the first chip.
33. The semiconductor package according to claim 32, wherein the insulating layer is comprised of a dielectric polymer.
34. The semiconductor package according to claim 32, wherein the insulating layer is comprised of a glass substrate.
35. The semiconductor package of claim 26, further comprising an insulating layer interposed between the first and second chips.
36. The semiconductor package according to claim 35, wherein the insulating layer is further comprised of a dielectric adhesive.
37. The semiconductor package according to claim 35, wherein the insulating layer is further comprised of a dielectric polymer adhesively joined to the upper surface of the first chip and the lower surface of the second chip.
38. The semiconductor package according to claim 35, wherein the insulating layer is further comprised of a glass substrate adhesively joined to the upper surface of the first chip and the lower surface of the second chip.
39. The semiconductor package according to claim 35, wherein the insulating layer is further comprised of a self-adhering dielectric film.
40. The semiconductor package according to claim 26 wherein the plurality of castellations are further comprised of a plurality of metallized films.
41. The semiconductor package according to claim 40 wherein the plurality of metallic films are comprised of aluminum.
42. The semiconductor package according to claim 40 wherein the plurality of metallic films are comprised of copper.
43. The semiconductor package according to claim 40 wherein the plurality of metallic films are comprised of a refractory metal.
44. A package for a photosensitive device capable of sensing incident light, comprising:
a semiconductor chip having an upper surface that supports the photosensitive device, the chip having a plurality of bond pads exposed at the upper surface that are coupled to the device;
at least one optical layer disposed on the photosensitive device; and
a plurality of castellations disposed on selected portions of the chip that extend outwardly from the bond pads to form a plurality of leadless inputoutput locations for the package.
45. The package according to claim 44 wherein the semiconductor chip is further comprised of an opposing lower surface having a lower edge and a peripheral surface that extends between the upper surface and the lower surface.
46. The package according to claim 45 wherein the plurality of castellations is further comprised of a plurality of planar members extending upwardly from the lower edge and along the peripheral surface to the bond pads.
47. The package according to claim 45 wherein the plurality of castellations is further comprised of a plurality of semi-circular members each having an axis that is approximately parallel to the peripheral surface that extend inwardly into the peripheral surface and upwardly from the lower edge to the plurality of bond pads.
48. The package of claim 44, further comprising a dielectric layer interposed between the castellations and the chip.
49. The package according to claim 45, further comprising an insulating layer disposed on the lower surface of the chip.
50. The package according to claim 49, wherein the insulating layer is comprised of a dielectric polymer.
51. The package according to claim 49, wherein the insulating layer is comprised of a glass substrate.
52. The package according to claim 44 wherein the plurality of castellations are further comprised of a plurality of metallized films.
53. The package according to claim 52 wherein the plurality of metallic films are comprised of aluminum.
54. The package according to claim 52 wherein the plurality of metallic films are comprised of copper.
55. The package according to claim 52 wherein the plurality of metallic films are comprised of copper.
56. The package according to claim 52 wherein the plurality of metallic films are comprised of a refractory metal.
57. A method for forming a leadless, interconnected semiconductor package, comprising:
disposing a second semiconductor chip onto a first semiconductor chip, each chip having a plurality of exposed bond pads;
forming a plurality of interconnections that extend from bond pads on the first chip to corresponding bond pads on the second chip; and
forming a plurality of castellations that extend from the bond pads on the first chip.
58. The method according to claim 57 wherein the step of disposing is further comprised of bonding the second chip to the first chip with an adhesive.
59. The method according to claim 57 wherein the step of bonding is further comprised of bonding the second chip to the first chip using an double-backed adhesive tape.
60. The method according to claim 57 wherein the step of disposing is further comprised of interposing an insulating layer between the first and second semiconductor chips.
61. The method according to claim 57 wherein the step of forming a plurality of interconnections further comprises:
applying a dielectric layer to a surface portion of the first and the second semiconductor chips; and
depositing a metallic film on the dielectric layer.
62. The method according to claim 57 wherein the step of forming a plurality of castellations further comprises:
applying a dielectric layer to a surface portion of the first semiconductor chip; and
depositing a metallic film on the dielectric layer.
63. The method according to claim 57 further comprising:
applying a dielectric layer to the second semiconductor chip that extends at least partially onto a surface of the first semiconductor chip.
64. A method for fabricating a plurality of vertically stacked, interconnected and leadless semiconductor packages, comprising:
supporting a substrate having a plurality of first semiconductor chips formed therein, the first chips having a first plurality of bond pads exposed at an upper surface of the substrate;
positioning a plurality of second semiconductor chips onto the substrate, each second chip being positioned on a single first chip and having a second plurality of bond pads;
depositing a plurality of interconnections onto the first chips and the second chips that extend between corresponding bond pads on the first and second chips;
singulating the substrate to obtain a plurality of separated semiconductor packages; and
depositing a plurality of castellations to the first chips that extend outwardly from the first plurality of bond pads.
65. The method according to claim 64 wherein the step of positioning is further comprised of bonding the second chips to the substrate using an adhesive.
66. The method according to claim 64 wherein the step of bonding is further comprised of applying one side of a double-backed adhesive tape to the substrate; and disposing the second chip onto an opposing side of the double-backed adhesive tape.
67. The method according to claim 64 wherein the step of depositing a plurality of interconnections further comprises: depositing a dielectric layer onto selected surface portions of the first and second chips; and forming a metallic film on the dielectric layer.
68. The method according to claim 64 wherein the step of depositing a plurality of castellations further comprises: depositing a dielectric layer onto selected surface portions of the first chips; and forming a metallic film on the dielectric layer.
69. The method according to claim 64 wherein the step of singulating the substrate further comprises: thinning the substrate at a lower surface that opposes the upper surface to obtain a thinned substrate; and dicing the thinned substrate to form a plurality of separated semiconductor packages.
70. The method according to claim 64 wherein the step of singulating the substrate further comprises: forming a plurality of holes that project through the substrate that are positioned between adjacent first chips; thinning the substrate at a lower surface that opposes the upper surface to obtain a thinned substrate; and dicing the thinned substrate along a direction that substantially bisects the holes.
71. The method according to claim 70 wherein the step of thinning the substrate is further comprised of backgrinding the substrate.
72. The method according to claim 64, further comprising applying a dielectric layer to the second semiconductor chips that substantially encapsulates the second chips and at least partially extends onto the first chips.
73. A method for fabricating a plurality of photosensing packages, comprising:
supporting a substrate having a plurality of photosensitive devices formed on an upper surface of the substrate, each photosensitive device having a plurality of bond pads disposed on the upper surface;
disposing at least one optical layer onto the photosensitive device;
forming a plurality of drains in the upper surface of the substrate that are positioned between adjacent photosensitive devices and project at least partially into the substrate;
thinning the substrate at a lower surface that opposes the upper surface to expose the plurality of drains; and
depositing a plurality of castellations onto the packages that extend outwardly from the plurality of bond pads.
74. The method according to claim 73 wherein the step of depositing a plurality of castellations further comprises: depositing a dielectric layer onto selected surface portions of the package; and forming a metallic film on the dielectric layer.
75. The method according to claim 73 wherein the step of thinning the substrate further comprises: forming a plurality of holes that project through the substrate that are positioned between adjacent photosensitive devices; backgrinding the substrate at the lower surface to obtain a thinned substrate; and dicing the thinned substrate along a direction that substantially bisects the holes.
76. The method according to claim 73 wherein the step of disposing at least one optical layer onto the photosensitive device further comprises positioning an optical layer onto the photosensitive device that substantially blocks infrared radiation.
77. The method according to claim 73 wherein the step of disposing at least one optical layer onto the photosensitive device further comprises applying an optical layer by spin coating an optically transparent material onto the photosensitive device.
78. The method according to claim 77 wherein the step of applying an optical layer by spin coating an optically transparent material onto the photosensitive device is further comprised of planarizing a surface of the optical layer.
79. The method according to claim 73 wherein the step of disposing at least one optical layer onto the photosensitive device further comprises: sputtering a layer of an optically transparent material onto the photosensitive device; and planarizing the sputtered layer to obtain an optically flat surface.
80. The method according to claim 73 wherein the step of disposing at least one optical layer onto the photosensitive device further comprises: growing an epitaxial layer on the photosensitive device; and planarizing the epitaxial layer to obtain an optically flat surface.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A write once disc, comprising:
at least one record layer on which data is recorded;
a temporary defect management area having first temporary defect information regarding only a defect in the recorded data detected during a corresponding first recording operation other than a prior recording operation, and first temporary defect management information for managing the first temporary defect information; and
at least one defect management area in which the temporary defect information and temporary defect management information recorded in the temporary defect management area are recorded as defect information and defect management information, respectively,
wherein the defect information and defect management information andor the temporary defect information and temporary defect management information are used by a recording andor reproducing apparatus to perform defect management with respect to the data recorded on the at least one record layer.
2. The write once disc of claim 1, wherein the at least one defect management area comprises at least two defect management areas.
3. The write once disc of claim 1, wherein the temporary defect information and temporary defect management information are recorded as a pair of information adjacent to each other in the temporary defect management area.
4. The write once disc of claim 3, wherein the temporary defect information and temporary defect management information are recorded several times, and the temporary defect management information includes information regarding a location of corresponding temporary defect information.
5. The write once disc of claim 3, wherein the temporary defect management information includes information regarding a location of previous temporary defect information recorded in the prior recording operation before the first temporary defect information.
6. The write once disc of claim 1, further comprising a replacement area in which a replacement is recorded to replace the defect in the recorded data, wherein the temporary defect information includes a pointer pointing to a location of the defect and a pointer pointing to a location of the replacement for the defect.
7. The write once disc of claim 6, wherein the temporary defect information further includes state information specifying and distinguishing between whether the defect occurs in one of continuous defect blocks and a single defect block.
8. The write once disc of claim 7, wherein the state information specifies that the defect occurs in the continuous defect blocks and that the pointer for the defect and the pointer for the replacement indicate starting positions of the defect and the replacement, respectively.
9. The write once disc of claim 7, wherein the state information specifies that the defect occurs in the continuous defect block and that the pointer for the defect and the pointer for the replacement indicate end positions of the defect and the replacement, respectively.
10. A method of managing disc defects, comprising:
recording only information regarding a defect detected in data, which is recorded in a data area of a disc during a recording operation having an index of i, where i is an integer, as ith temporary defect information in a temporary defect management area of the disc;
recording management information for managing the ith temporary defect information as ith temporary defect management information in the temporary defect management area;
repeating the recording temporary defect information and the recording the temporary defect management information at least once while increasing the index i given to the recording operation, the temporary defect information, and the temporary defect management information by 1 so as to record temporary defect information and temporary defect management information having only defect information for the corresponding one of the recording operations; and
reading and writing all of the recorded temporary defect management information and temporary defect information in a defect management area of the disc.
11. The method of claim 10, wherein the reading and writing is performed after recording of data in the data area according to a last recording operation.
12. The method of claim 10, wherein the recording the temporary defect information and the recording the temporary defect management information comprises sequentially recording the temporary defect information and the temporary defect management information as a pair of information adjacent to each other, starting from an end of the temporary defect management area.
13. The method of claim 12, wherein the recording the temporary defect information and the recording the temporary defect management information comprises recording the temporary defect information and the temporary defect management information several times.
14. The method of claim 12, wherein the recording the temporary defect management information comprises recording information regarding a location of the temporary defect information corresponding to the temporary defect management information, and information regarding a location of temporary defect information recorded during another recording operation having the index of at least i\u22121.
15. The method of claim 10, wherein the recording the temporary defect information and the recording the temporary defect management information comprises recording the temporary defect information and the temporary defect management information sequentially as a pair of information adjacent to each other, starting from an end of the temporary defect management area.
16. The method of claim 15, wherein the recording the temporary defect information and the recording the temporary defect management information comprises recording the temporary defect information and the temporary defect management information several times.
17. The method of claim 15, wherein the recording the temporary defect management information comprises recording information regarding a location of the temporary defect information corresponding to the temporary defect management information, and information regarding a location of temporary defect information recorded during another recording operation having the index of at least i\u22121.
18. The method of claim 10, wherein the recording the temporary defect information comprises:
recording the data in predetermined units during the ith recording operation:
verifying the recorded data to detect a defective area of the disc where a defect exists;
storing information regarding the defective area and information regarding a replacement area for the defective area as the ith temporary defect information in a memory of a recording apparatus;
repeating the recording data in predetermined units and the verifying the recorded data at least once; and
reading the information stored in the memory and writing the read information as the ith temporary defect information in the temporary defect management area when the recording operation ends.
19. A recording andor reproducing apparatus comprising:
a recordingreading unit that records data on andor reads data from a disc; and
a controller that controls the recordingreading unit to record in a temporary defect management area temporary defect information regarding a defect detected from a portion of the data recorded in a data area of the disc in a corresponding one of recording operation units, and to record in the temporary defect management area temporary defect management information for managing the temporary defect information in the temporary defect management area, where the temporary defect information does not include information regarding another defect defected during a prior recording operation unit.
20. The recording andor reproducing apparatus of claim 19, wherein the controller controls the recordingreading unit to record corresponding temporary defect information and temporary defect management information as a pair of information adjacent to each other.
21. The recording andor reproducing apparatus of claim 19, wherein the controller controls the recordingreading unit to record corresponding temporary defect information and temporary defect management information in the temporary defect management area for each of the recording operation units, and to read all of recorded temporary defect information and temporary defect management information and to record the read temporary defect information and temporary defect management information in a defect management area during disc finalization.
22. A recording andor reproducing apparatus comprising:
a recordingreading unit that records data on andor reads data from a disc; and
a controller that controls the recordingreading unit to record information regarding a defect detected from data, which is recorded in a data area of the disc according to recording operation having an index of i, where i is an integer as ith temporary defect information in a temporary defect management area; to record defect management information for managing the ith temporary defect information as ith temporary defect management information in the temporary defect management area; record data in the data area while increasing the index; given to a corresponding recording operation, a corresponding temporary defect information, and a corresponding temporary defect management information by 1; and to record all of the recorded temporary defect information and temporary defect management information in a defect management area during disc finalization.
23. The recording andor reproducing apparatus of claim 22, wherein the controller controls the recordingreading unit to record data in the data area according to a last recording operation, and to record all of recorded temporary defect information and temporary defect management information as final defect information and defect management information, respectively, in the defect management area.
24. The recording andor reproducing apparatus of claim 22, wherein the controller controls the recordingreading unit to sequentially record corresponding temporary defect information and temporary defect management information as a pair of information, starting from a start of the temporary defect management area.
25. The recording andor reproducing apparatus of claim 22, wherein the controller controls the recordingreading unit to sequentially record corresponding temporary defect information and temporary defect management information as a pair of information, starting from an end of the temporary defect management area.
26. The recording andor reproducing apparatus of claim 24, wherein the controller controls the recordingreading unit to record information regarding a location of the temporary defect information corresponding to the temporary defect management information and information regarding a location of temporary defect information recorded during another recording operation having the index of at least i\u22121.
27. The recording andor reproducing apparatus of claim 22, further comprising a memory unit,
wherein the controller controls the recordingreading unit to record data in predetermined units according to a predetermined recording operation having a common index; verifies the recorded data to detect a defective area of the disc in which a defect exists; creates information regarding the defective area and information regarding a replacement area for the defective area; stores the created information as temporary defect information in the memory unit; and controls the recordingreading unit to record the data recorded in an area following the defective area in predetermined units according to the recording operation, read the temporary defect information from the memory unit, and record the read temporary defect information in the temporary defect management area.
28. The write once disc of claim 1, wherein:
the first temporary defect information includes only the defect in the recorded data detected during the first recording operation without having information on another defect occurring during the prior recording operation,
the write once disc further comprises a temporary finalized defect management area having temporary finalized defect information that includes at least a portion of the first temporary defect information recorded in the temporary defect management area, and temporary finalized defect management information for managing the temporary finalized defect information; and
the at least one defect management area includes of the recorded temporary defect information and temporary defect management information recorded as the defect information and the defect management information, respectively, during disc finalization, and
the temporary defect information and the temporary defect management information are recorded as a pair of information in the temporary defect management area.
29. The write once disc of claim 28, wherein:
the temporary finalized defect management information is recorded whenever the temporary defect management information is recorded k times, and
k is an integer that is more than or equal to 2.
30. The write once disc of claim 29, wherein the temporary finalized defect management information is obtained based on all temporary management information recorded when the temporary finalized defect management information is to be recorded.
31. The write once disc of claim 30, wherein the temporary finalized defect management information comprises all of the temporary defect information included in the temporary management information recorded when the temporary finalized defect management information is desired to be recorded.
32. The write once disc of claim 29, wherein the at least one defect management area comprises at least two defect management areas.
33. The write once disc of claim 28, wherein the temporary defect information and the temporary defect management information are recorded adjacent to each other in the temporary defect management area.
34. The write once disc of claim 28, wherein the temporary defect information and the temporary defect management information are recorded as a pair of information in the temporary defect management area in units of a predetermined number of blocks.
35. The write once disc of claim 33, wherein the temporary defect information and the temporary defect management information are recorded several times, and the temporary defect management information further includes information regarding a recording location of corresponding temporary defect information.
36. The write once disc of claim 33, wherein the temporary defect information includes a pointer pointing to the location of a defect and a pointer pointing to a location of a replacement area for the defect.
37. The write once disc of claim 35, wherein the temporary defect management area is divided into a plurality of parts, and a copy of the temporary defect information and the temporary defect management information are recorded in each of the plurality of parts.
38. The method of claim 10, wherein:
the recording the temporary defect information comprises recording the temporary defect information regarding the data, which is recorded in the data area of the disc according to the recording operation having the index of i, as the ith temporary management information in the temporary defect management area in units of a predetermined number of blocks,
the method further comprising recording temporary finalized defect management information, which is obtained based on all of the recorded temporary management information, in a temporary finalized defect management area whenever the temporary management information is recorded k times, wherein k is an integer more than or equal to 2;
repeating the recording of the recording the temporary finalized defect management information at least once; and
the reading and writing further comprises reading all of the recorded temporary defect management information including temporary management information recorded in the temporary finalized defect management information and temporary defect information and recording the temporary defect management information and temporary defect information in the defect management area.
39. The method of claim 38, wherein the reading and recording the temporary defect management information are performed after recording of data in the data area according to a last recording operation.
40. The method of claim 38, wherein: the recording the temporary defect management information comprises sequentially recording the temporary defect information and the temporary defect management information as a pair of information adjacent to each other, starting from a start of the temporary defect management area.
41. The method of claim 40, wherein:
the recording the temporary defect management information comprises recording the temporary defect information and the temporary defect management information repeatedly, and
each temporary defect management information specifies a location of a corresponding temporary defect information and a location of a temporary defect information that is recorded during another recording operation having the index of at least i\u22121.
42. The method of claim 41, wherein:
the disc includes a plurality of temporary defect management areas, and
the recording the temporary defect management information comprises recording a copy of the temporary defect information and the temporary defect management information in each of the plurality of temporary defect management areas.
43. The method of claim 38, wherein the recording the temporary defect management information comprises recording the temporary defect information and the temporary defect management information sequentially as a pair of information adjacent to each other, starting from an end of the temporary defect management area.
44. The method of claim 43, wherein the recording the temporary defect management information comprises recording the temporary defect information and the temporary defect management information repeatedly.
45. The method of claim 44, wherein:
the disc includes a plurality of temporary defect management areas, and
the recording the temporary defect management information comprises recording a copy of the temporary defect information and the temporary defect management information in each of the plurality of temporary defect management areas.
46. The method of claim 44, wherein:
the recording the temporary defect management information comprises recording the temporary defect information and the temporary defect management information repeatedly, and
each of the temporary defect management information specifies a location of corresponding temporary defect information and a location of temporary defect information that is recorded during another recording operation having the index of at least i\u22121.
47. The method of claim 38, wherein the recording the temporary defect management information comprises:
recording data in predetermined units during a corresponding recording operation having a common index:
verifying the recorded data to detect a defective area of the disc in which a defect exists;
storing information regarding the defective area and information regarding a replacement area for the defective area as temporary defect information in a memory of a recording apparatus;
repeating the recording the data, the verifying the recorded data, and the storing the information at least once; and
reading temporary defect information from the memory, and recording the temporary defect information and temporary defect management information for managing the temporary defect information in the temporary defect management area in units of a predetermined number of blocks, when the recording operation ends.
48. The recording andor reproducing apparatus of claim 19 wherein the controller controls the recordingreading unit to:
further record the temporary management information in the temporary defect management area in units of a predetermined number of blocks, and
record temporary finalized defect management information obtained based on all of the recorded temporary defect management information in a temporary finalized defect management area whenever the temporary management information is recorded k times after k recording operations.
49. The recording andor reproducing apparatus of claim 48, wherein the controller controls the recordingreading unit to record the temporary defect information and the temporary defect management information, which constitute the temporary defect information, as a pair of information to be adjacent to each other.
50. The recording andor reproducing apparatus of claim 48, wherein the controller controls the recordingreading unit to record information regarding the location of temporary defect information corresponding to the temporary defect management information, and information regarding the location of temporary defect information recorded in a prior recording operation right before the recording operation of the corresponding temporary defect information.
51. The recording andor reproducing apparatus of claim 48, wherein the controller controls the recordingreading unit to record defect information and defect management information, which is obtained based on all recorded temporary management information and temporary finalized defect management information, in a defect management area during disc finalization.
52. The recording andor reproducing apparatus of claim 48, wherein:
the disc includes a plurality of temporary defect management areas, and
the controller controls the recordingreading unit to record a copy of the temporary management information in each of the plurality of temporary defect management areas.