1. A heat exchanger comprising: a first manifold; a second manifold; a plurality of multichannel tubes extending lengthwise between and in fluid communication with the first and second manifolds, the plurality of multichannel tubes being configured to receive an external fluid flowing across the width of each multichannel tube from a leading edge to a trailing edge and configured to flow an internal fluid along the length of each multichannel tube such that the internal fluid exchanges heat with the external fluid and a vapor quality of the internal fluid changes as it progresses along the length; a plurality of generally parallel flow paths disposed within each multichannel tube and extending lengthwise through each multichannel tube; and a flow control mechanism included within at least one multichannel tube, the flow control mechanism being configured to allow more of the internal fluid to flow near the leading edge than near the trailing edge of the at least one multichannel tube, wherein the flow control mechanism includes a crimped flow path disposed near the trailing edge and an uncrimped flow path disposed near the leading edge.
2. The heat exchanger of claim 1, wherein the crimped flow path has a uniform cross-section across the length of the at least one multichannel tube.
3. The heat exchanger of claim 1, wherein the flow control mechanism includes a crushed flow path disposed near the trailing edge and an uncrushed flow path disposed near the leading edge.
4. The heat exchanger of claim 1, wherein the flow control mechanism disposed near a lengthwise end of the at least one multichannel tube containing the internal fluid with a lower vapor quality relative to an opposite lengthwise end of the at least one multichannel tube.
5. A heat exchanger comprising: a first manifold; a second manifold; a plurality of multichannel tubes in fluid communication with the first and second manifolds, the plurality of multichannel tubes being configured to receive an external fluid flowing across a width dimension extending from a leading edge to a trailing edge; a plurality of generally parallel flow paths disposed within each of the plurality of multichannel tubes extending lengthwise through each of the plurality of multichannel tubes, each flow path being configured to flow an internal fluid such that the internal fluid exchanges heat with the external fluid and a vapor quality of the internal fluid changes as it progresses lengthwise through each of the plurality of multichannel tubes; a first flow path of the plurality of generally parallel flow paths disposed near the leading edge; a second flow path disposed near the trailing edge; and a crimp in the second flow path disposed near an end of the second flow path containing the internal fluid with a lowest vapor quality relative to other portions of the second flow path, wherein the crimp is configured to manage flow by reducing the size of the second flow path such that the second flow path is smaller than the first flow path.
6. The heat exchanger of claim 5, wherein the first flow path has a uniform cross-section across the length of the first flow path.
7. The heat exchanger of claim 5, comprising fins disposed between the plurality of multichannel tubes.
8. The heat exchanger of claim 5, wherein the plurality of generally parallel flow paths is configured to allow more of the internal fluid to flow within each of the plurality of multichannel tubes near the leading edge relative to an amount flowing near the trailing edge.
9. A heat exchanger comprising: a first manifold; a second manifold; a plurality of multichannel tubes in fluid communication with the first and second manifolds, the plurality of multichannel tubes being configured to receive an external fluid flowing across a width dimension extending from a leading edge to a trailing edge; a plurality of generally parallel flow paths disposed within each of the plurality of multichannel tubes and extending lengthwise through each of the plurality of multichannel tubes, wherein a distance between each of the plurality of generally parallel flow paths increases along the width dimension from the leading edge to the trailing edge; a first flow path disposed near the leading edge of a first multichannel tube of the plurality of multichannel tubes; and a second flow path disposed near the trailing edge of the first multichannel tube, the second flow path having an opening that is partially obstructed by a flow control mechanism to reduce a size of the opening such that the second flow path is smaller than the first flow path, wherein the flow control mechanism includes a crimped flow path.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electronic component package comprising:
a ReDistribution Line (RDL) pattern comprising a redistribution pattern terminal;
a buildup dielectric layer coupled to the RDL pattern, the buildup dielectric layer comprising a redistribution pattern terminal aperture exposing the redistribution pattern terminal; and
an interconnection ball within the redistribution pattern terminal aperture and coupled to the redistribution pattern terminal, the interconnection ball comprising an enclosed portion within the buildup dielectric layer, the enclosed portion comprising an outer concave surface, wherein the enclosed portion is cylindrical.
2. The electronic component package of claim 1 wherein an angle of intersection between the outer concave surface of the interconnection ball and the redistribution pattern is less than 90\xb0.
3. The electronic component package of claim 1 wherein the interconnection ball further comprises an exposed portion exposed from the buildup dielectric layer.
4. The electronic component package of claim 3 wherein the exposed portion is spherical.
5. The electronic component package of claim 1 wherein the buildup dielectric layer comprises a dielectric material having an elongation of 100% and a cure temperature of 150-200\xb0 C.
6. The electronic component package of claim 1 further comprising:
an electronic component comprising an active surface; and
a first buildup dielectric layer coupled to the active surface, the buildup dielectric layer being a second buildup layer that is an entirely different layer than the first buildup dielectric layer, the first buildup dielectric layer comprising a dielectric material having an elongation of 100% and a cure temperature of 150-200\xb0 C., the RDL pattern being coupled to the first buildup dielectric.
7. The electronic component package of claim 6 wherein the second buildup dielectric layer has a thickness within the range of 15 microns (\u03bcm) to 40 \u03bcm.
8. The electronic component package of claim 7 wherein the thickness of the second buildup dielectric layer is 20 \u03bcm.
9. The electronic component package of claim 6 further comprising a bond pad coupled to the active surface, the first buildup dielectric layer comprising a first buildup dielectric layer bond pad aperture exposing the bond pad, wherein the RDL pattern is coupled to the bond pad through the first buildup dielectric layer bond pad aperture.
10. An electronic component package comprising:
a ReDistribution Line (RDL) pattern comprising a redistribution pattern terminal;
a buildup dielectric layer coupled to the RDL pattern, the buildup dielectric layer comprising a redistribution pattern terminal aperture exposing the redistribution pattern terminal; and
an interconnection ball within the redistribution pattern terminal aperture and coupled to the redistribution pattern terminal, the interconnection ball comprising a cylindrical enclosed portion within the buildup dielectric layer, the enclosed portion comprising a protruding lip at the RDL pattern.
11. The electronic component package of claim 10 wherein the RDL pattern comprises:
a first RDL layer;
a second RDL layer coupled to the first RDL layer; and
a third RDL layer coupled to the second RDL layer.
12. The electronic component package of claim 10 wherein the RDL pattern has a thickness of 9 microns (\u03bcm) and has a uniform thickness.
13. The electronic component package of claim 10 wherein a thickness of the buildup dielectric layer is less than 15% of a height that the interconnection ball protrudes above the buildup dielectric layer.
14. The electronic component package of claim 13 wherein the thickness of the buildup dielectric layer is 20 \u03bcm and the height that the interconnection ball protrudes above the buildup dielectric layer is within the range of 150 \u03bcm to 180 \u03bcm.
15. A method of forming an electronic component package comprising:
forming a ReDistribution Line (RDL) pattern comprising a redistribution pattern terminal;
applying a buildup dielectric layer to the RDL pattern; and
patterning the buildup dielectric layer to form a redistribution pattern terminal aperture exposing the redistribution pattern terminal, the patterning comprises spraying the buildup dielectric layer with a buildup dielectric layer removal fluid at a pressure within the range of 100 pounds per square inch (PSI) to 1000 PSI.
16. The method of claim 15 wherein the pressure is 300 PSI.
17. The method of claim 15 wherein the buildup dielectric layer removal fluid comprises Propylene Glycol Methyl Ether Acetate (PGMEA).
18. The method of claim 15 wherein a wafer comprises singulation streets, the applying a buildup dielectric layer comprising applying the buildup dielectric layer to the singulation streets, the method further comprising:
singulating the wafer and the buildup dielectric layer along the singulation streets.
19. The method of claim 15 further comprising:
performing a solder ball reflow to form an interconnection ball within the redistribution pattern terminal aperture and coupled to the redistribution pattern terminal, wherein the buildup dielectric layer is cured during the solder ball reflow.
20. The method of claim 19 wherein the solder ball reflow comprises heating the electronic component package to 250\xb0 C. for one minute.
21. The method of claim 19 wherein the interconnection ball comprises an enclosed portion within the buildup dielectric layer, the enclosed portion comprising an outer concave surface.
22. The method of claim 19 wherein the interconnection ball comprises a protruding lip at the RDL pattern.
23. The method of claim 19 wherein a thickness of the buildup dielectric layer is less than 15% of a height that the interconnection ball protrudes above the buildup dielectric layer.
24. An electronic component package comprising:
a ReDistribution Line (RDL) pattern comprising a redistribution pattern terminal;
a buildup dielectric layer coupled to the RDL pattern, the buildup dielectric layer comprising a dielectric material having an elongation of 100% and a cure temperature of 150-200\xb0 C., the buildup dielectric layer comprising a redistribution pattern terminal aperture exposing the redistribution pattern terminal; and
an interconnection ball within the redistribution pattern terminal aperture and coupled to the redistribution pattern terminal, wherein a thickness of the buildup dielectric layer is less than 15% of a height that the interconnection ball protrudes above the buildup dielectric layer.
25. The electronic component package of claim 24 wherein the thickness of the buildup dielectric layer is 20 \u03bcm and the height that the interconnection ball protrudes above the buildup dielectric layer is within the range of 150 \u03bcm to 180 \u03bcm.
26. An electronic component package comprising:
a ReDistribution Line (RDL) pattern comprising a redistribution pattern terminal; and
a buildup dielectric layer coupled to the RDL pattern, the buildup dielectric layer comprising a redistribution pattern terminal aperture exposing the redistribution pattern terminal, the redistribution pattern terminal aperture comprising a cylindrical concave sidewall.
27. The electronic component package of claim 26 wherein the redistribution pattern terminal aperture comprises a flared base at the redistribution pattern terminal.