1. A lead assembly of an implantable medical device, said lead assembly comprising:
an elongated tubular body extending between a proximal connector end and a distal leading end, the body having a plurality of elongated conductors disposed in the body, the connector end of the body having a plurality of conductive terminals coupled with the conductors;
a plurality of electrodes disposed on the body and configured to be located at or near an anatomy of interest of a patient, the plurality of electrodes being conductively coupled with the terminals of the body by the conductors, the electrodes configured to at least one of sense electric activity of the anatomy of interest or deliver stimulus pulses to the anatomy of interest;
a position tracking sensor disposed in the body and conductively coupled with one or more of the terminals of the body by one or more of the conductors;
a first and second electrode of the plurality of electrodes are conductively coupled with a first and second conductor of the plurality of elongated conductors, respectively, and the tracking sensor is conductively coupled in series with each of the first and second electrodes; and
wherein the tracking sensor generates an electric position signal representative of a position of the tracking sensor when the body is being implanted into the patient.
2. The lead assembly of claim 1, wherein the tracking sensor includes a conductive coil disposed in the body closer to the distal end of the body than the electrode.
3. The lead assembly of claim 1, further comprising an electronic isolation component disposed in series with the first electrode, the second electrode, and the tracking sensor, the isolation component electrically isolating the first electrode from the second electrode by preventing stimulus pulses conveyed to the first electrode from flowing to the anatomy of interest through the second electrode or by preventing the electric activity sensed by the first electrode from being conveyed to the implantable medical device along the second conductor.
4. The lead assembly of claim 3, wherein the isolation component includes a resistor having an electric resistance characteristic that is greater than the electric resistance characteristic of any of the first electrode, the second electrode, or the tracking sensor.
5. The lead assembly of claim 3, wherein the isolation component includes a capacitor having an electric impedance characteristic that increases when the capacitor is exposed to the external magnetic field and decreases when the capacitor is removed from the external magnetic field.
6. The lead assembly of claim 3, wherein the isolation component includes a resistor and a capacitor disposed in series with the first electrode, the second electrode, and the tracking sensor.
7. The lead assembly of claim 3, wherein the isolation component includes an overcurrent protection fuse disposed between and in series with the first and second electrodes, the overcurrent protection fuse configured to fail and open a conductive pathway that conductively couples the first and second electrodes when an electric current of at least a threshold energy is conveyed through the fuse.
8. The lead assembly of claim 3, wherein the isolation component includes a dissolving fuse disposed between and in series with the first and second electrodes, the dissolving fuse configured to dissolve and open a conductive pathway that conductively couples the first and second electrodes after the dissolving fuse is disposed within the patient for at least a predetermined time period.
9. A lead assembly of an implantable medical device, said lead assembly comprising:
an elongated tubular body extending between a proximal connector end and a distal leading end, the body having first and second elongated conductors disposed in the body, the connector end of the body having first and second conductive terminals coupled with the first and second conductors, respectively;
first and second electrodes disposed on the body and configured to be located at or near an anatomy of interest of a patient, the first and second electrodes conductively coupled with the first and second terminals, respectively, by the first and second conductors, the first and second electrodes configured to at least one of sense electric activity of the anatomy of interest or deliver stimulus pulses to the anatomy of interest; and
a position tracking sensor disposed in the body and conductively coupled in series with the first and second electrodes, the tracking sensor configured to generate an electric signal that represents a position of the tracking sensor in the patient when the body is implanted in the patient, wherein the tracking sensor conductively couples the first and second electrodes when the body is being implanted into the patient.
10. The lead assembly of claim 9, wherein the tracking sensor includes a conductive coil disposed in the body closer to the distal end of the body than one or more of the first and second electrodes.
11. The lead assembly of claim 9, further comprising an electronic isolation component disposed in series with the first electrode, the second electrode, and the tracking sensor, the isolation component electrically isolating the first electrode from the second electrode by preventing stimulus pulses conveyed to the first electrode from flowing to the anatomy of interest through the second electrode or by preventing the electric activity sensed by the first electrode from being conveyed to the implantable medical device along the second conductor.
12. The lead assembly of claim 11, wherein the isolation component includes a resistor having an electric resistance characteristic that is greater than the electric resistance characteristic of any of the first electrode, the second electrode, or the tracking sensor.
13. The lead assembly of claim 11, wherein the isolation component includes a capacitor having an electric impedance characteristic that increases when the capacitor is exposed to the external magnetic field and decreases when the capacitor is removed from the external magnetic field.
14. The lead assembly of claim 11, wherein the isolation component includes a resistor and a capacitor disposed in series with the first electrode, the second electrode, and the tracking sensor.
15. The lead assembly of claim 11, wherein the isolation component includes an overcurrent protection fuse disposed between and in series with the first and second electrodes, the overcurrent protection fuse configured to fail and open a conductive pathway that conductively couples the first and second electrodes when an electric current of at least a threshold energy is conveyed through the fuse.
16. The lead assembly of claim 11, wherein the isolation component includes a dissolving fuse disposed between and in series with the first and second electrodes, the dissolving fuse configured to dissolve and open a conductive pathway that conductively couples the first and second electrodes after the dissolving fuse is disposed within the patient for at least a predetermined time period.
17. A method of manufacturing a lead assembly of an implantable medical device, said method comprising:
providing an elongated tubular body extending between a proximal connector end and a distal leading end, the body having first and second elongated conductors disposed in the body, the connector end of the body having first and second conductive terminals coupled with the first and second conductors, respectively;
positioning first and second electrodes on the body, the first and second electrodes configured to be located at or near an anatomy of interest of a patient, the first and second electrodes conductively coupled with the first and second terminals, respectively, by the first and second conductors, the first and second electrodes configured to at least one of sense electric activity of the anatomy of interest or deliver stimulus pulses to the anatomy of interest; and
providing a position tracking sensor in the body that conductively couples, in series, with the first and second electrodes, the tracking sensor configured to generate an electric signal that represents a position of the tracking sensor in the patient when body is in the patient, wherein the tracking sensor conductively couples the first and second electrodes when the body is implanted into the patient.
18. The method of claim 17, further comprising conductively coupling an electronic isolation component in series with the first electrode, the second electrode, and the tracking sensor, the isolation component electrically isolating the first electrode from the second electrode by preventing stimulus pulses conveyed to the first electrode from flowing to the anatomy of interest through the second electrode or by preventing the electric activity sensed by the first electrode from being conveyed to the implantable medical device along the second conductor.
19. The method of claim 18, wherein the isolation component includes a resistor having an electric resistance characteristic that is greater than the electric resistance characteristic of any of the first electrode, the second electrode, or the tracking sensor.
20. The method of claim 18, wherein the isolation component includes a capacitor having an electric impedance characteristic that increases when the capacitor is exposed to the external magnetic field and decreases when the capacitor is removed from the external magnetic field.
21. The lead assembly of claim 18, wherein the isolation component includes an overcurrent protection fuse disposed between and in series with the first and second electrodes, the overcurrent protection fuse configured to fail and open a conductive pathway that conductively couples the first and second electrodes when an electric current of at least a threshold energy is conveyed through the fuse.
22. The lead assembly of claim 18, wherein the isolation component includes a dissolving fuse disposed between and in series with the first and second electrodes, the dissolving fuse configured to dissolve and open a conductive pathway that conductively couples the first and second electrodes after the dissolving fuse is disposed within the patient for at least a predetermined time period.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor light-emitting device comprising:
a light-emitting structure that includes a plurality of compound semiconductor layers, at least one of the plurality of compound semiconductor layers including an active layer, and the light-emitting structure having a rounded side surface;
a first electrode unit on the light-emitting structure;
a second electrode layer under the light-emitting structure; and
a channel layer around a region between the second electrode layer and the light-emitting structure,
wherein the channel layer has a top surface and a bottom surface, and a portion of the top surface of the channel layer has an exposed surface and an unexposed surface opposite to each other, the unexposed surface overlapping a portion of the active layer, and
wherein a first thickness between the exposed surface and the bottom surface is substantially identical to a second thickness between the unexposed surface and the bottom surface.
2. The semiconductor light-emitting device according to claim 1, wherein the light-emitting structure is provided in a pillar shape.
3. The semiconductor light-emitting device according to claim 1, wherein the channel layer comprises at least one of SiO2, SiOx, SiOxNy, Si3N4, Al2O3, TiO2, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), and GZO (gallium zinc oxide).
4. The semiconductor light-emitting device according to claim 1, wherein the light-emitting structure comprises a Group III-V compound semiconductor and comprises:
a first conductivity type semiconductor layer under the first electrode unit;
the active layer under the first conductivity type semiconductor layer; and
a second conductivity type semiconductor layer between the active layer and the second electrode layer.
5. The semiconductor light-emitting device according to claim 4, further comprising at least one of a third conductivity type semiconductor layer, a non-metallic layer and an ohmic layer between the second conductivity type semiconductor layer and the second electrode layer.
6. The semiconductor light-emitting device according to claim 4, wherein a first pattern branches outward from a first electrode pad in at least one shape, and a second pattern is formed in a circular shape or in a same shape as an outer shape of the first conductivity type semiconductor layer.
7. The semiconductor light-emitting device according to claim 1, further comprising a conductive support member under the second electrode layer.
8. A semiconductor light-emitting device comprising:
a cylindrical light-emitting structure that includes a plurality of compound semiconductor layers, at least one of the plurality of compound semiconductor layers including an active layer;
a polygonal second electrode layer under the light-emitting structure;
a channel layer around a region between the polygonal second electrode layer and the cylindrical light-emitting structure;
a first electrode pad on the light-emitting structure; and
a circular pattern disposed along a top edge of the light-emitting structure and being connected electrically to the first electrode pad,
wherein the circular pattern has a rounded shape that is spaced apart by substantially a same first distance from a side surface of the cylindrical light-emitting structure, and the circular pattern having the rounded shape is spaced apart by a second distance from the first electrode pad, the second distance being greater than the first distance, and
wherein the channel layer has a top surface and a bottom surface, and a portion of the top surface of the channel layer has an exposed surface and an unexposed surface opposite to each other, the unexposed surface overlapping a portion of the active layer, and
wherein a first thickness between the exposed surface and the bottom surface is identical to a second thickness between the unexposed surface and the bottom surface.
9. The semiconductor light-emitting device according to claim 8, wherein the light-emitting structure comprises a Group III-V compound semiconductor and comprises:
an N-type semiconductor layer under the first electrode pad;
the active layer under the N-type semiconductor layer; and
a P-type semiconductor layer under the active layer.
10. The semiconductor light-emitting device according to claim 8, wherein the second electrode layer comprises a reflective metal having a polygonal plate shape, and the light-emitting device comprises a conductive support member under the second electrode layer.
11. The semiconductor light-emitting device according to claim 9, wherein the compound semiconductor layers comprise disk shapes with a same diameter or different diameters.
12. The semiconductor light-emitting device according to claim 9, further comprising a transparent channel layer at an outer edge between the P-type semiconductor layer and the second electrode layer, and the channel layer comprises at least one of an oxide-based material or a nitride-based material.
13. The semiconductor light-emitting device according to claim 8, wherein an outer side of the second electrode layer extends outward from an outer side of the light-emitting structure.
14. The semiconductor light-emitting device according to claim 9, wherein the P-type semiconductor layer has a larger diameter than the N-type semiconductor layer.
15. A light-emitting device package comprising:
a light-emitting device comprising:
a cylindrical light-emitting structure that includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer;
a second electrode layer under the second conductivity type semiconductor layer;
a channel layer around a region between the second electrode layer and the cylindrical light-emitting structure; and
a first electrode unit on the first conductivity type semiconductor layer;
a body unit having an opened cavity at a top of the body unit, and
a plurality of lead electrodes disposed in the cavity of the body unit and connected electrically to the first electrode unit and the second electrode layer,
wherein the channel layer has a top surface and a bottom surface, and a portion of the top surface of the channel layer has an exposed surface and an unexposed surface opposite to each other, the unexposed surface overlapping a portion of the active layer, and
wherein a first thickness between the exposed surface and the bottom surface is substantially identical to a second thickness between the unexposed surface and the bottom surface.
16. The light-emitting device package according to claim 15, further comprising a resin material formed in the cavity.
17. The semiconductor light-emitting device according to claim 4, wherein a portion of the channel layer does not vertically overlap the first conductivity type semiconductor layer.
18. The semiconductor light-emitting device according to claim 4, wherein a diameter of the active layer is greater than a diameter of the first conductivity type semiconductor layer, and a diameter of the second conductivity type semiconductor layer is greater than a diameter of the active layer.
19. The semiconductor light-emitting device according to claim 4, wherein an edge portion of the second electrode layer is disposed at a position lower than the second conductivity type semiconductor layer.
20. The semiconductor light-emitting device according to claim 1, wherein the first electrode unit comprises:
a first electrode pad on the light-emitting structure;
a first pattern branched from the first electrode pad; and
a second pattern coupled to an end of the first pattern and that encircles the first electrode pad,
wherein the second pattern of the first electrode unit has a rounded shape that is spaced apart by substantially a same first distance from the rounded side surface of the light-emitting structure, and the second pattern having the rounded shape is spaced apart by a second distance from the first electrode pad, the second distance being greater than the first distance.