1. A minus ion generating apparatus comprising:
a mixing flow path comprising;
plural circular flow paths that are arranged in parallel and that are communicated in a radial direction,
plural inlets and plural outlets formed in said circular flow paths so that the location of the inlets and the location of the outlets are mutually different in a radial direction in each of said circular flow paths, and
plural communicating flow paths by which the inlet formed in one circular flow path communicates with the outlet formed in another circular flow path,
a supplying flow path for fluid which communicates with the mixing flow path, and
a discharging flow path for fluid which communicates with the mixing flow path.
2. The minus ion generating apparatus according to claim 1, wherein a tank is connected to said supplying flow path.
3. The minus ion generating apparatus according to claim 1 or 2, wherein a tank is connected to said discharging flow path.
4. The minus ion generating apparatus according to claim 1, in which a spray nozzle is connected to said supplying flow path.
5. The minus ion generating apparatus according to claim 1, in which a gas-and-liquid separator is connected to said discharging flow path.
6. The minus ion generating apparatus according to claim 1, wherein a device for supplying air is connected to the minus ion generating apparatus.
7. The minus ion generating apparatus according to claim 1, or 6, wherein a device for supplying water is connected to the minus ion generating apparatus.
8. A minus ion generating system wherein the minus ion generating apparatus according to claim 1, are connected to a pipe for sending wind in a single system manner at plural locations.
9. A minus ion generating method for generating minus ions by sending water and air to the minus ion generating apparatus according to claim 1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A photon detector for detecting high-energy photons, the photon detector comprising:
a p-i-n semiconductor diode including:
a p-type semiconductor region;
an n-type semiconductor region; and
a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region;
wherein the compensated i-region has a width of about 100 \u03bcm to about 400 \u03bcm;
wherein the compensated i-region is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount; and
wherein the compensated i-region is doped to include a free carrier concentration of less than about 1010 cm\u22123.
2. The photon detector of claim 1 wherein the free carrier concentration of the compensated i-region is less than about 108 cm\u22123.
3. The photon detector of claim 1 wherein the width of the compensated i-region is about 100 \u03bcm to about 300 \u03bcm.
4. The photon detector of claim 1 wherein the width of the compensated i-region is about 250 \u03bcm to about 350 \u03bcm.
5. The photon detector of claim 1 wherein a drift region is formed in the p-i-n semiconductor diode when the p-i-n semiconductor diode is forward biased that has a width of about 150 \u03bcm to about 300 \u03bcm.
6. The photon detector of claim 1 wherein the p-type semiconductor region and the n-type semiconductor region are laterally adjacent to the compensated i-region.
7. The photon detector of claim 1 wherein the compensated i-region is sandwiched between the p-type semiconductor region and the n-type semiconductor region.
8. The photon detector of claim 1, further comprising:
a voltage source; and
a controller operably coupled to the voltage source and configured to direct the voltage source to apply a forward bias to the p-i-n semiconductor diode such that the compensated i-region exhibits the Gunn effect while subjected to the forward bias.
9. The photon detector of claim 1, further comprising:
a voltage source; and
a controller operably coupled to the voltage source and programmed to direct the voltage source to apply a forward bias to the p-i-n semiconductor diode such that the compensated i-region exhibits the Gunn effect while subjected to the forward bias.
10. The photon detector of claim 1 wherein each of the p-type semiconductor region, the n-type semiconductor region, and the compensated i-region includes a III-V semiconductor compound.
11. The photon detector of claim 10 wherein the III-V semiconductor compound includes gallium arsenide.
12. The photon detector of claim 1:
wherein each of the p-type semiconductor region, the n-type semiconductor region, and the compensated i-region includes gallium arsenide;
wherein the free carrier concentration of the compensated i-region is less than about 107 cm\u22123; and
wherein the p-i-n semiconductor diode exhibits a drift region having a width of about 150 \u03bcm to about 300 \u03bcm when the p-i-n semiconductor diode is forward biased.
13. The method of claim 12 wherein the high-energy photons includes at least one of x-rays or gamma rays.
14. The method of claim 12 wherein the drift region has a width of about 150 \u03bcm to about 300 \u03bcm when being forward biased.
15. The method of claim 12 wherein the p-i-n semiconductor diode includes a compensated i-region having a free carrier concentration of less than about 107 cm\u22123.
16. The method of claim 12 wherein the p-i-n semiconductor diode includes a III-V semiconductor compound.
17. The method of claim 16 wherein the III-V semiconductor compound includes gallium arsenide.
18. A method for detecting high-energy photons, the method comprising:
forward biasing a p-i-n semiconductor diode of a photon detector such that a compensated i-region of the p-i-n semiconductor diode exhibits the Gunn effect while being forward biased;
while the p-i-n semiconductor diode is forward biased, receiving the high-energy photons at a drift region of the p-i-n semiconductor diode of the photon detector to generate a photoresponse in the photon detector; and
determining the presence of the high-energy photons at least partially based on the photoresponse of the photon detector.
19. A photon detector for detecting high-energy photons, the photon detector comprising a p-i-n semiconductor diode, a voltage source, and a controller, wherein:
the p-i-n semiconductor diode includes a p-type semiconductor region, an n-type semiconductor region, and a compensated i-semiconductor region disposed between the p-type semiconductor region and the n-type semiconductor region;
the controller is operably coupled to the voltage source and configured to direct the voltage source to apply a forward bias to the p-i-n semiconductor diode; and
the compensated i-semiconductor region exhibits the Gunn effect while subjected to the forward bias.