1. A method for producing and applying a screening profile of a resilient and electrically conductive sealing material, in which this latter is applied in a paste-like condition to a portion of a housing part for electrical function elements, in particular to a housing portion of a radio telephone, and hardens there, characterised in that
a) in a first step of the method the sealing material (4) is introduced into a groove-shaped mold cavity (2) of a negative mold (1), the course and cross-section of which corresponds to the course and the cross-section of the screening profile to be applied to the housing (5), regions of the sealing material (4) which is introduced projecting somewhat above the mold cavity (2);
b) in a second step of the method those faces of the housing (5) which are to be provided with the screening profile are placed on the sealing material (4) located in the mold cavity (2), such that the protruding region of the sealing material (4) in contact with these faces is pressed back into the mold cavity (2);
c) the housing (5) is fixed in position on the negative mold (1) until the sealing material (4) has hardened sufficiently;
d) the housing (5) having an adherent screening seal (4) is removed from the negative mold (1).
2. A method according to claim 1, characterised in that the hardening of the sealing material (4) is accelerated by heating.
3. A method according to claim 2, characterised in that the negative mold (1) is heated.
4. A method according to one of the preceding claims, characterised in that the mold cavity (2) of the negative mold (1) is filled with sealing material (4) with the aid of a dispensing needle (3), which is guided along the course of the mold cavity (2).
5. A method according to one of claims 1 to 3, characterised in that the mold cavity (2) of the negative mold (1) is filled with sealing material with the aid of a doctor blade.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method comprising:
providing a wafer assembly comprising one or more semiconductor dies disposed on a carrier substrate;
depositing at least two metal layers above the one or more semiconductor dies to create at least a portion of a metal substrate;
removing the carrier substrate from the wafer assembly; and
manipulating the wafer assembly via the metal substrate for further processing.
2. The method of claim 1, wherein depositing the at least two metal layers comprises at least one of electrochemical deposition (ECD), electroless chemical deposition (ElessCD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), evaporation, or a plasma spray technique.
3. The method of claim 1, wherein one of the at least two metal layers comprises at least one of Cu, Ni, Au, Ag, Co, W, Mo, or alloys thereof.
4. The method of claim 1, wherein each of the at least two metal layers has a thickness between 10 and 400 \u03bcm.
5. The method of claim 1, further comprising depositing a seed metal layer above the semiconductor dies as one of the at least two metal layers.
6. The method of claim 5, wherein depositing the seed metal layer comprises at least one of evaporation, sputtering, chemical vapor deposition (CVD), physical vapor deposition (PVD), metal organic chemical vapor deposition (MOCVD), or electrochemical deposition (ECD).
7. The method of claim 5, wherein the seed metal layer comprises at least one of Cu, Ni, W, TaCu, TaTaNCu, TaNCu, TiTaNCu, TaTiNCu, TiCu, TiTiNCu, TiNCu, CrAu, CrAuNiAu, TiAu, or TiNiAu.
8. The method of claim 5, wherein a reflective layer functions as the seed metal layer.
9. The method of claim 8, wherein the reflective layer comprises at least one of AgTiAu, AgTiNCu, AgTaAu, AgWAu, AgTaNCu, AlTaAu, or AlTaNCu.
10. The method of claim 1, further comprising plasma treating the surface of the one or more dies before forming the at least two metal layers above the dies.
11. The method of claim 1, further comprising depositing an oxidation protection layer above the at least two metal layers.
12. The method of claim 11, where the oxidation protection layer comprises at least one of CrAu, Ni, or NiAu.
13. The method of claim 1, wherein the one or more semiconductor dies are light-emitting diode (LED) dies, power device dies, laser diode dies, or vertical cavity surface emitting device dies.
14. The method of claim 1, wherein removing the carrier substrate comprises at least one of pulse laser irradiation, selected photo-enhanced chemical etching, wet etching, or chemical mechanical polishing.
15. A method comprising:
providing a wafer assembly comprising one or more vertical light-emitting diode (VLED) dies disposed on a carrier substrate;
depositing at least two metal layers above the one or more VLED dies to create at least a portion of a metal substrate;
removing the carrier substrate from the wafer assembly; and
handling the wafer assembly via the metal substrate for further semiconductor processing.
16. The method of claim 15, wherein the VLED dies comprise at least one of GaN, AlGaN, InGaN, or Al InGaN.
17. The method of claim 15, wherein depositing the at least two metal layers comprises at least one of electrochemical deposition (ECD), electroless chemical deposition (ElessCD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), evaporation, or a plasma spray technique.
18. The method of claim 15, wherein one of the at least two metal layers comprises at least one of Cu, Ni, Au, Ag, Co, W, Mo, or alloys thereof.
19. The method of claim 15, wherein each of the at least two metal layers has a thickness between 10 and 400 \u03bcm.
20. The method of claim 15, further comprising depositing a seed metal layer above the VLED dies as one of the at least two metal layers.