1. A method of forming devices comprising:
forming a first region and a second region in a semiconductor substrate;
forming a semiconductive material over the first region, wherein the semiconductive material has a different electrical property than the semiconductor substrate;
forming a first dielectric material over the first region;
depositing a second dielectric material over the first dielectric material and over the second region, wherein the second dielectric material is different than the first dielectric material; and
depositing a gate electrode material over the second dielectric material.
2. The method of claim 1 further comprising:
forming a third region and a fourth region in the semiconductor substrate; wherein:
forming the semiconductive material over the first region further comprises forming the semiconductive material over the third region;
forming the first dielectric material over the first region further comprises forming the first dielectric material over the fourth region; and
depositing the second dielectric material over the first dielectric material and over the second region further comprises depositing the second dielectric material over the third region.
3. The method of claim 2, wherein forming the semiconductive material over the first region, further comprises epitaxially growing the semiconductive material.
4. The method of claim 1, wherein depositing the first dielectric material occurs at a temperature between approximately 750 degrees Celsius and approximately 900 degrees Celsius.
5. The method of claim 1 further comprising:
implanting the first region with a first dopant, wherein the first region has a first conductivity; and
implanting the second region with a second dopant, wherein the second region has a second conductivity, and wherein the first conductivity and the second conductivity are a same conductivity.
6. The method of claim 1, further comprising:
implanting the first region with a first dopant, wherein the first region has a first conductivity; and
implanting the second region with a second dopant, wherein the second region has a second conductivity and the first conductivity and the second conductivity are different conductivities.
7. The method of claim 2 further comprising:
implanting the first region and the third region with a first dopant, wherein the first region and the third region have a first conductivity; and
implanting the second region and the fourth region with a second dopant, wherein the second region and the fourth region have a second conductivity and wherein the first conductivity is different from the second conductivity.
8. The method of claim 1, wherein forming the semiconductive material further comprises forming the semiconductor material comprising a material selected from the group consisting of germanium and carbon.
9. The method of claim 8, wherein forming the semiconductive material comprises forming the semiconductive material comprising a material selected from the group consisting of silicon germanium and silicon carbon.
10. The method of claim 1, wherein forming the first dielectric material over the first region further comprises depositing the first dielectric material.
11. The method of claim 1, wherein the second dielectric material comprises a high dielectric constant material.
12. A method of forming devices comprising:
forming a thick gate dielectric device in a first region of a semiconductor substrate, wherein the thick gate dielectric device has a first channel region and the semiconductor substrate comprises a first material;
forming a thin gate dielectric device in a second region of a semiconductor substrate, wherein the thin gate dielectric device has a gate dielectric that is thinner than that of the thick gate dielectric device, the thin gate dielectric device has a second channel region and forming the thick gate dielectric device and the thin gate dielectric device further comprises:
epitaxially growing the first channel region over the first region, wherein the first channel region comprises a second material, wherein the second material is different from the first material;
forming a first gate dielectric over the first channel region;
forming a second gate dielectric over the first gate dielectric and the second region; and
depositing a gate electrode material over the second gate dielectric.
13. The method of claim 12, wherein the second material changes band gap of the first channel region relative to the second channel region.
14. The method of claim 12, wherein the second material comprises a material selected from the group consisting of silicon germanium and silicon carbon.
15. The method of claim 12, wherein the second gate dielectric comprises a high dielectric constant material.
16. The method of claim 12, wherein forming the first gate dielectric comprises depositing the first gate dielectric.
17. The method of claim 16, wherein depositing the first gate dielectric further comprises chemically vapor depositing the first gate dielectric at a temperature between approximately 750 and approximately 900 degrees Celsius.
18. The method of claim 12, wherein the semiconductor substrate further comprises a third region and a fourth region and the method further comprises:
forming a second thick gate dielectric device in the third region, wherein the second thick gate dielectric device has a third channel region,
forming a second thin gate dielectric device in the fourth region, wherein the second thin gate dielectric device has a fourth channel region and the second thin gate dielectric device has a gate dielectric that is thinner than that of the second thick gate dielectric device; and wherein:
epitaxially growing the first channel region further comprises epitaxially growing the fourth channel region;
forming the first gate dielectric further comprises forming the first gate dielectric over the third channel region; and
forming the second gate dielectric further comprises forming the second gate dielectric over the fourth region.
19. The method of claim 18 further comprising:
implanting the first region and second region with a first dopant, wherein the first region and the second region have a first conductivity; and
implanting the third region and fourth region with a second dopant, wherein the third region and the fourth region have a second conductivity and wherein the first conductivity is different from the second conductivity.
20. A method comprising:
forming an isolation region in a semiconductor substrate to form a first semiconductive region and a second semiconductive region in a semiconductor substrate;
epitaxially growing a semiconductive material over the first semiconductive region, wherein the semiconductive material comprises an element selected from a group consisting of germanium and carbon;
depositing a first dielectric material over the first semiconductive region;
depositing a second dielectric material over the first dielectric material and the second semiconductive region; and
depositing a gate electrode material over the second dielectric material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a composite structure comprising:
breaking oxygen molecules into their atomic form with a corona discharge;
bonding the atomic form of the oxygen molecules to molecules in a first surface of a removable backing material;
applying a pre-preg material to the first surface of the removable backing material to form a pre-preg material with removable backing, the pre-preg material comprising a curable resin;
positioning the pre-preg material with removable backing on at least one forming surface of a tool;
pressing a second surface of the removable backing material of the pre-preg material to apply the pre-preg material on the at least one forming surface of the tool and form the pre-preg material into a desired shape;
removing the removable backing material from the pre-preg material with removable backing material after the pre-preg material is shaped; and
curing the pre-preg material.
2. The method of claim 1, further comprising:
removing air pockets between the pre-preg material and the removable backing material to enhance adhesion.
3. The method of claim 2, wherein removing the air pockets further comprises at least one of applying a squeegee and applying a vacuum debulking.
4. The method of claim 1, further comprising:
forming the pre-preg material from a feedstock.
5. The method of claim 1, wherein the pre-preg material is one of a uni-tape and a woven fabric.
6. The method of claim 1, further comprising:
vacuum debulking the pre-preg material with removable backing material to enhance adhesion between the pre-preg material and the removable backing material.
7. The method of claim 6, wherein vacuum debulking the pre-preg material with removable backing comprises applying the vacuum debulking for less than 5 seconds at a temperature of about 45 degrees C.
8. The method of claim 1, further comprising:
preparing the pre-preg material to achieve a desired fiber orientation.
9. The method of claim 8, wherein preparing the pre-preg material to achieve a desired fiber orientation further comprises:
cutting a feedstock in sections at select angles; and
coupling the sections of feedstock end to end to form pre-preg material having the desired fiber orientation.
10. The method of claim 1, wherein pressing a second surface of the removable backing material of the pre-preg material to apply the pre-preg material on the at least one forming surface of the tool and form the pre-preg material into a desired shape further comprises:
applying forming rollers of a forming head to the second surface of the removable backing material of the pre-preg material with removable backing.
11. The method of claim 1, further comprising:
after removing the backing material from the pre-preg material, applying and pressing at least one other layer of pre-preg material before curing.
12. The method of claim 1, further comprising:
after curing, removing the formed pre-preg material from the tool; and
trimming the formed pre-preg material.
13. The method of claim 1, wherein the removable backing material is made from one of polyethylene, polyurethane, polyester, a paper, nylon and fluorinated hydrocarbons.
14. The method of claim 1, wherein bonding the atomic form of the oxygen molecules to molecules in a first surface of a removable backing material further comprises applying an energy level to the first surface of the removable backing material, the energy level selected in consideration of an adhesion level between the first surface of the removable backing material and the pre-preg material on the removable backing material.
15. A method of forming a composite structure comprising:
applying sections of a feedstock comprising a resin and fibers to a removable backing material to form a sheet of pre-preg having a desired fiber orientation relative to a side of the sheet of pre-preg, the desired fiber orientation comprising a non-zero degree angle fiber orientation, and a first surface of the removable backing material bonded to the feedstock through oxygen molecules broken into their atomic form with a corona discharge;
applying the sheet of pre-preg having the desired fiber orientation to at least one surface of a tool to form a pre-preg having a desired shape;
removing the removable backing material from the pre-preg having the desired shape; and
curing the pre-preg having the desired shape.
16. The method of claim 15, further comprising exposing the removable backing material to a surface energy level selected based on a material used as the removable backing material.
17. The method of claim 15, wherein applying the sections of the feedstock to the removable backing material comprises removing air between the sections of the feedstock and the removable backing material.
18. The method of claim 15, wherein applying the sheet of pre-preg having the desired fiber orientation to at least one surface of a tool to form a pre-preg having a desired shape comprises stretching the sheet of pre-preg having the desired fiber orientation and the removable backing material over the tool.
19. The method of claim 15, wherein applying the sheet of pre-preg having the desired fiber orientation to at least one surface of a tool to form a pre-preg having a desired shape comprises applying the sheet of pre-preg having the desired fiber orientation and removable backing material to the at least one surface of the tool.
20. The method of claim 15, further comprising applying additional sheets of pre-preg having the desired fiber orientation to form the pre-preg having the desired shape.
21. The method of claim 15, wherein the removable backing material is stretchable.
22. The method of claim 15, wherein the removable backing material is pliable.
23. The method of claim 15, wherein the removable backing material is flexible.
24. A method of forming a composite structure comprising:
positioning a sheet of pre-preg material with a removable backing material on at least one forming surface of a tool, the sheet of pre-preg material with the removable backing material comprising sections of a feedstock having a fiber orientation relative to a side of the sheet of pre-preg of a non-zero degree angle fiber orientation applied to a first surface of the removable backing material, the first surface of the removable backing material bonded to the sheet of pre-preg material through oxygen molecules broken into their atomic form with a corona discharge;
forcing the sheet of pre-preg material onto the at least one forming surface of the tool by pressing a second surface of the removable backing material to form the sheet of pre-preg material into a desired shape;
removing the removable backing material from the sheet of pre-preg material after the sheet of pre-preg material is shaped; and
curing the sheet of pre-preg material.
25. The method of claim 24, further comprising selecting the first surface of the removable backing material to exhibit an enhanced surface adhesiveness relative to the second surface of the removable backing material.
26. The method of claim 24, further comprising forcing another sheet of pre-preg material onto the sheet of pre-preg material on the at least one forming surface of the tool by pressing a second surface of another removable backing material of the another sheet of pre-preg material to form the another sheet of pre-preg material into the desired shape.
27. A method of forming a sheet of pre-preg material with a removable backing for a composite structure, the method comprising:
breaking oxygen molecules into their atomic form with a corona discharge;
bonding the atomic form of the oxygen molecules to molecules in a first surface of a removable backing;
orienting a feedstock comprising a resin and fibers at a desired fiber orientation relative to a lateral side of the removable backing comprising a non-zero degree angle fiber orientation;
applying sections of the feedstock to the first surface of the removable backing to form a sheet of pre-preg material including the fibers at the desired fiber orientation relative to the lateral side of the removable backing;
positioning the sheet of pre-preg material on at least one forming surface of a tool;
pressing a second surface of the removable backing to apply the sheet of pre-preg material on the at least one forming surface of the tool and form the sheet of pre-preg material into a desired shape;
removing the removable backing from the sheet of pre-preg material after the sheet of pre-prep material is shaped; and
curing the sheet of pre-preg material.
28. The method of claim 27, further comprising selecting the removable backing to exhibit an enhanced surface adhesion relative to the second surface of the removable backing.
29. A method of forming a composite structure comprising:
applying a pre-preg material to a first surface of a removable backing material to form a pre-preg material with removable backing, the pre-preg material comprising a curable resin, and the first surface of the removable backing material bonded to the pre-preg material through oxygen molecules broken into their atomic form with a corona discharge;
positioning the pre-preg material with removable backing on at least one forming surface of a tool;
pressing a second surface of the removable backing material of the pre-preg material to apply the pre-preg material on the at least one forming surface of the tool and form the pre-preg material into a desired shape;
removing the removable backing material from the pre-preg material with removable backing material after the pre-preg material is shaped; and
curing the pre-preg material.