1. A method for manufacturing a semiconductor device, comprising:
forming a gate electrode layer over a substrate having an insulating surface;
stacking a gate insulating layer, an oxide semiconductor film, and a conductive film over the gate electrode layer;
forming a first mask layer over the gate insulating layer, the oxide semiconductor film, and the conductive film;
performing a first etching with the first mask layer to etch the oxide semiconductor film and the conductive film so that an oxide semiconductor layer and a conductive layer are formed;
forming a second mask layer by ashing the first mask layer; and
performing a second etching with the second mask layer to etch the oxide semiconductor layer and the conductive layer so that an oxide semiconductor layer having a depression, a source electrode layer, and a drain electrode layer are formed,
wherein the first mask layer is formed using a light-exposure mask,
wherein each of the first etching and the second etching is dry etching with use of an etching gas, and
wherein the oxide semiconductor layer having a depression includes a region with a smaller thickness than a region overlapping with the source electrode layer or the drain electrode layer.
2. The method for manufacturing a semiconductor device, according to claim 1, wherein the oxide semiconductor film includes indium, gallium, and zinc.
3. The method for manufacturing a semiconductor device, according to claim 1, wherein the etching gas includes chlorine.
4. The method for manufacturing a semiconductor device, according to claim 3, wherein the etching gas further includes oxygen.
5. The method for manufacturing a semiconductor device, according to claim 1, wherein a half-tone mask or a gray-tone mask is used as the light-exposure mask.
6. A method for manufacturing a semiconductor device, comprising:
forming a gate electrode layer over a substrate having an insulating surface;
stacking a gate insulating layer, a first oxide semiconductor film, a second oxide semiconductor film, and a conductive film over the gate electrode layer;
forming a first mask layer over the gate insulating layer, the first oxide semiconductor film, the second oxide semiconductor film, and the conductive film;
performing a first etching with the first mask layer to etch the first oxide semiconductor film, the second oxide semiconductor film, and the conductive film so that a first oxide semiconductor layer, a second oxide semiconductor layer, and a conductive layer are formed;
forming a second mask layer by ashing the first mask layer; and
performing a second etching with the second mask layer to etch the first oxide semiconductor layer, the second oxide semiconductor layer, and the conductive layer so that an oxide semiconductor layer having a depression, a source region, a drain region, a source electrode layer, and a drain electrode layer are formed,
wherein the first mask layer is formed using a light-exposure mask,
wherein each of the first etching and the second etching is dry etching with use of an etching gas, and
wherein the oxide semiconductor layer having a depression includes a region with a smaller thickness than a region overlapping with the source region or the drain region.
7. The method for manufacturing a semiconductor device, according to claim 6, wherein the first oxide semiconductor film has lower electrical conductivity than the second oxide semiconductor film.
8. The method for manufacturing a semiconductor device, according to claim 6, wherein the etching gas includes chlorine.
9. The method for manufacturing a semiconductor device, according to claim 8, wherein the etching gas further includes oxygen.
10. The method for manufacturing a semiconductor device, according to claim 6, wherein each of the first oxide semiconductor film and the second oxide semiconductor film includes indium, gallium, and zinc.
11. The method for manufacturing a semiconductor device, according to claim 6, wherein a half-tone mask or a gray-tone mask is used as the light-exposure mask.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A recording apparatus having a print head formed by an array of a plurality of chips, each chip having a plurality of recording elements for recording an image arranged in a first direction, the print head being arranged in the first direction so as to have an overlap portion, in which adjacent chips overlap for a predetermined number of recording elements, and for recording, while transporting a recording medium in a second direction perpendicular to the first direction, an image to be recorded on the recording medium by driving the recording elements of the print head based on print data corresponding to the image to be recorded, comprising:
a first determination unit for determining whether or not an end of the image to be recorded is included in the overlap portion;
a first control unit for controlling, if a determination that the end is included in the overlap portion is made by the first determination unit, so as to use only one of the chips overlapping at the overlap portion for recording the image;
a second determination unit for determining whether or not the end of the image to be recorded runs over the overlap portion by a predetermined amount or less; and
a second control unit for controlling, if a determination that the end of the image to be recorded runs over the overlap portion by the predetermined amount or less is made by the second determination unit, so as to use only one of the chips overlapping at the overlap portion for recording the image by correcting the print data such that the end of the image is included in the overlap portion.
2. The recording apparatus according to claim 1,
wherein the predetermined amount is the number of recording elements corresponding to a width of a margin surrounding the image defined by the print data.