What is claimed is:
1. A method for improving the bond strength and quality between a borate-treated wood material and a phenolic resin in a wood composite product, the method comprising the steps of bonding the wood material with an adhesive system comprising the resin and an additional base, the base providing an increase in the alkalinity of the adhesive system over that provided by the resin, the increase sufficient to limit the bonding of borate molecules with the phenolic resin molecules to such an extent as to allow a substantially complete cross-linking of the phenolic resin molecules to occur.
2. The method of claim 1 wherein the base is added to the phenolic resin before application of the resin to the wood material, thereby increasing the alkalinity percentage of the resin, expressed as NaOH%, by more than 50%.
3. The method of claim 1 wherein the base is added to the wood material before application of the resin to the wood, thereby increasing the alkalinity percentage of the resin, expressed as NaOH%, by more than 50%.
4. The method of claim 2 wherein the base is chosen from the group of sodium hydroxide, sodium carbonate, potassium hydroxide, ammonia, and alkyl amines.
5. An adhesive system for use in the production of a wood composite product from borate-treated wood material, the adhesive system comprising a phenolic resin formulation having an alkalinity percentage, expressed as NaOH%, and a base, wherein the base provides the adhesive system with an alkalinity percentage of more than 50% than that of the resin.
6. The adhesive system claimed in claim 5, wherein the base is added to the resin.
7. The adhesive system claimed in claim 5, wherein the base is added to the wood material.
8. The use of the adhesive system claimed in claim 5 in the production of a wood composite product.
9. A method for producing a wood composite product from a borate-treated wood material and a highly-alkaline adhesive system containing a phenolic resin, the method comprising bonding the wood product together with the adhesive system, wherein the adhesive system comprises a resin formulation and a base added thereto, the base increasing the alkalinity percentage of the phenolic resin by between 50% and 500%.
10. A method as claimed in claim 9 wherein the borate-treated wood material is chosen from the group of lumber, veneer, strand, flake, stick, fiber and particle.
11. A wood composite product produced by the method claimed in claim 9.
12. A method for producing a wood composite product from a borate-treated wood material and a glue mix having a phenolic resin, the steps in the method comprising:
(a) adding a base to the glue mix prior to introducing the glue mix to the wood material, thereby increasing the alkalinity percentage of the phenolic resin by at least 50%, producing a more highly-alkaline glue mix;
(b) applying the more highly-alkaline glue mix to the wood material;
(c) placing the wood material in a desired holding assembly;
and
(d) allowing the phenolic resin to cure;
wherein the addition of the base to the glue mix increases the alkalinity percentage of the phenolic resin when applied to the wood material by at least 50%.
13. A method for producing a wood composite product from a borate-treated wood material and a glue mix having a phenolic resin, the steps in the method comprising:
(a) adding a base to the borate treated wood material;
(b) applying the glue mix to the wood material;
(c) placing the wood material in a desired holding assembly; and
(d) allowing the phenolic resin to cure;
wherein the addition of the base to the borate-treated wood material increases the alkalinity percentage of the phenolic resin when applied to the wood material by at least 50%.
14. A method as claimed in claim 9 wherein the wood composite product is Glulam produced by bonding borate-treated lumber with an adhesive system containing a phenol-resorcinol-formaldehyde resin in which the ratio between alkalinity % (expressed as NaOH %) of the phenol-resorcinol-formaldehyde resin and solids % of the same phenol-resorcinol-formaldehyde resin is between 0.06 and 0.2.
15. A method as claimed in claim 9 wherein the wood composite product is finger jointed lumber produced by bonding borate-treated lumber with an adhesive system containing a phenol-resorcinol-formaldehyde resin in which the ratio between alkalinity % (expressed as NaOH %) of the phenol-resorcinol-formaldehyde resin and solids % of the same phenol-resorcinol-formaldehyde resin is between 0.06 and 0.2.
16. A method as claimed in claim 9 wherein the wood composite product is oriented strand board produced by bonding borate-treated wood strands with an adhesive system containing a phenol-formaldehyde face resin in which the ratio between alkalinity % (expressed as NaOH %) of the resin and solids % of the same resin is between 0.12 and 0.4.
17. A method as claimed in claim 9 wherein the wood composite product is oriented strand board produced by bonding borate-treated wood strands with an adhesive system containing a phenol-formaldehyde core resin in which the ratio between alkalinity % (expressed as NaOH %) of the resin and solids % of the same resin is between 0.24 and 0. 8.
18. A method as claimed in claim 9 wherein the wood composite product is oriented strand board produced by bonding untreated wood strands with an adhesive system in the presence of a borate compound, wherein the adhesive system contains a phenol-formaldehyde face resin, and the ratio between alkalinity % (expressed as NaOH %) of the resin and solids % of the same resin is more than 0.12.
19. A method as claimed in claim 9 wherein the wood composite product is oriented strand board produced by bonding untreated wood strands with an adhesive system containing a phenol-formaldehyde core resin in the presence of a borate compound, wherein the ratio between alkalinity % (expressed as NaOH %) of the resin and solids % of the same resin is more than 0.24.
20. A method as claimed in claim 9 wherein the wood composite product is plywood produced by bonding borate-treated wood veneers with a glue mix containing a phenol-formaldehyde resin in which the ratio between alkalinity % (expressed as NaOH %) of the resin and solids % of the same resin is between 0.33 and 1.11.
21. A method as claimed in claim 9 wherein the wood composite product is laminated veneer lumber produced by bonding borate-treated wood veneers with a phenol-formaldehyde resin in which the ratio between alkalinity % (expressed as NaOH %) of the resin and solids % of the same resin is between 0.33 and 1.11.
22. A method as claimed in claim 9 wherein the wood composite product is fiberboard produced by bonding wood fibers with a phenol-formaldehyde resin in the presence of a borate compound, wherein the ratio between alkalinity % (expressed as NaOH %) of the resin and solids % of the same resin is more than 0.24.
23. A method as claimed in claim 9 wherein the wood composite product is particleboard produced by bonding wood particles with a phenol-formaldehyde resin in the presence of a borate compound, wherein the ratio between alkalinity % (expressed as NaOH %) of the resin and solids % of the same resin is more than 0.24.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A structure comprising:
a semiconductor;
a capacitor disposed on one surface portion of the semiconductor;
a transistor device disposed on a second surface portion of the semiconductor;
wherein the capacitor comprising:
a capacitor dielectric, and
a pair of capacitor electrodes separated by the capacitor dielectric;
wherein the transistor device has three electrodes;
wherein a first one of the transistor device electrodes is separated from a second one of the transistor device electrodes by a first portion of a device dielectric and the second one of the transistor device electrodes is separated from a third one of the transistor device electrodes by a second portion of the device dielectric;
wherein the first portion of the device dielectric and the second portion of the device dielectric are in direct contact with the semiconductor;
wherein the capacitor dielectric and the device dielectric are the same material and have different thicknesses; and
wherein the capacitor dielectric and the device dielectric have different hydrogen contents; and
wherein an etch rate of the capacitor dielectric is at least fourteen to one greater than an etch rate of the device dielectric to the same etchant.
2. The structure recited in claim 1 wherein the device dielectric and the capacitor dielectric are silicon nitride.
3. The structure recited in claim 1 wherein the first and third transistor device electrodes are source and drain electrodes and the second transistor device electrode is a gate electrode.
4. The structure recited in claim 3 wherein the device dielectric and the capacitor dielectric are silicon nitride.
5. A structure comprising:
a semiconductor;
a capacitor disposed on one surface portion of the semiconductor;
a transistor device disposed on a second surface portion of the semiconductor;
wherein the capacitor comprising:
a capacitor dielectric, and
a pair of capacitor electrodes separated by the capacitor dielectric;
wherein the transistor device has three electrodes;
wherein a first one of the transistor device electrodes is separated from a second one of the transistor device electrodes by a first portion of a device dielectric and the second one of the transistor device electrodes is separated from a third one of the transistor device electrodes by a second portion of the device dielectric;
wherein the first portion of the device dielectric and the second portion of the device dielectric are in direct contact with the semiconductor;
wherein the capacitor dielectric and the device dielectric are the same material and have different thicknesses; and
wherein a hydrogen concentration of the capacitor dielectric is at least one hundred to one greater than a hydrogen concentration of the device dielectric.
6. The structure recited in claim 5 wherein an etch rate of the capacitor dielectric is at least fourteen to one greater than an etch rate of the device dielectric to the same etchant.
7. The structure recited in claim 1 wherein the etchant is buffered hydrofluoric acid (BHF).
8. The structure recited in claim 6 wherein the etchant is buffered hydrofluoric acid (BHF).