1. A method of forming a MOSFET structure, comprising:
forming an epitaxial layer;
forming a cap layer above the epitaxial layer;
forming a first trench above the epitaxial layer; and
depositing a protection layer within the first trench,
wherein the protection layer is a material selected from the group consisting of germanium and silicon-germanium.
2. The method of claim 1, further comprising:
performing a chemical mechanical polishing (CMP) process on the protection layer.
3. The method of claim 1, wherein the forming the first trench above the epitaxial layer comprises:
patterning an inter-layer dielectric (ILD) layer of the MOSFET structure to form the first trench.
4. The method of claim 3, further comprising:
forming a bottom photoresist layer above the protection layer and the ILD layer;
forming a first photoresist layer above the bottom photoresist layer; and
forming a second photoresist layer above the first photoresist layer.
5. The method of claim 4, further comprising:
substantially etching the second photoresist layer to pattern the bottom photoresist layer and the first photoresist layer for forming a second trench.
6. The method of claim 5, wherein the substantially etching the second photoresist layer to pattern the bottom photoresist layer and the first photoresist layer for forming the second trench comprises substantially etching the second photoresist layer to pattern the bottom photoresist layer and the first photoresist layer for forming the second trench using gas selected from the group consisting of N2H2-mixed gas, O2 gas, and CO2 gas.
7. The method of claim 5, further comprising:
substantially etching the first photoresist layer, the first portion of the ILD layer, and the first portion of the protection layer to form a third trench.
8. The method of claim 7, wherein the substantially etching the first photoresist layer, the first portion of the ILD layer, and the first portion of the protection layer to form the third trench comprises substantially etching the first photoresist layer, the first portion of the ILD layer, and the first portion of the protection layer to form the third trench using CF4CHF3-mixed gas.
9. The method of claim 7, further comprising:
substantially etching the bottom photoresist layer.
10. The method of claim 9, wherein the substantially etching the bottom photoresist layer comprises substantially etching the bottom photoresist layer using O2 gas, or N2H2-mixed gas, CO2 gas, CO gas, SO2 gas, and etc.
11. The method of claim 9, further comprising:
substantially etching the second portion of the protection layer.
12. The method of claim 11, wherein the substantially etching the second portion of the protection layer comprises substantially etching the second portion of the protection layer using dry etching.
13. The method of claim 11, wherein the substantially etching the second portion of the protection layer comprises substantially etching the second portion of the protection layer using wet etching.
14. The method of claim 11, wherein the substantially etching the second portion of the protection layer comprises substantially etching the second portion of the protection layer using a sulfuric peroxide mixture (SPM).
15. The method of claim 11, wherein the substantially etching the second portion of the protection layer using an ammonia peroxide mixture (APM).
16. A MOSFET structure, comprising:
an epitaxial layer;
a cap layer formed above the epitaxial layer; and
a protection layer deposited within a first trench of the MOSFET structure above the epitaxial layer,
wherein the protection layer is a material selected from the group consisting of germanium and silicon-germanium.
17. The MOSFET structure of claim 16, further comprising:
an inter-layer dielectric (ILD) layer patterned on the MOSFET structure to form the first trench;
a bottom photoresist layer formed above the protection layer and the ILD layer;
a first photoresist layer formed above the bottom photoresist layer; and
a second photoresist layer formed above the first photoresist layer.
18. The MOSFET structure of claim 17, wherein the first photoresist layer is formed using silicon and PR mixture.
19. The MOSFET structure of claim 17, wherein the epitaxial layer is formed using silicon-germanium, and the cap layer is formed using silicon.
20. A method of forming a MOSFET structure, comprising:
forming an epitaxial layer;
forming a cap layer above the epitaxial layer;
patterning an inter-layer dielectric (ILD) layer of the MOSFET structure to form a first trench above the epitaxial layer;
depositing a protection layer within the first trench;
forming a bottom photoresist layer above the protection layer and the ILD layer;
forming a first photoresist layer above the bottom photoresist layer; and
forming a second photoresist layer above the first photoresist layer,
wherein the protection layer is a material selected from the group consisting of germanium and silicon-germanium.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An image processing apparatus comprising:
a storage configured for storing image data comprising data of a first model; and
a processor configured for determining a final model parameter set and a final inlier scale of the first model by iteratively performing a model estimation process and an inlier scale estimation process, wherein the model estimation process determines a model parameter set from the image data by using an initial inlier scale, and the inlier scale estimation process determines an inlier scale by using the model parameter set,
wherein when the model estimation process is repeated, in the repeated model estimation process, a new model parameter set is determined by using an inlier scale determined according to an immediately previously performed inlier scale estimation process, and
wherein in the inlier scale estimation process, a new inlier scale is determined using a model parameter set determined according to an immediately previously performed model estimation process.
2. The apparatus of claim 1, wherein model parameter sets and inlier scales determined by iteratively performing the model estimation process and the inlier scale estimation process converge to the final model parameter set and the final inlier scale of the first model, respectively.
3. The apparatus of claim 1,
wherein the image data comprises data of multiple models including the first model and a second model, and
wherein the processor is further configured for:
performing an inlier removal process whereby first inlier data located within the final inlier scale of the first model is removed from the image data based on the final model parameter set and the final inlier scale of the first model, and
performing a final determination process whereby a final model parameter set and a final inlier scale of the second model are determined by iteratively performing the model estimation process and the inlier scale estimation process on the image data from which the first inlier data has been removed.
4. The apparatus of claim 3, wherein the processor determines final model parameter sets and final inlier scales of all of the multiple models by iteratively performing, each time a final model parameter set and a final inlier scale of one of the multiple models are determined, the inlier removal process and the final determination process on another one of the multiple models.
5. The apparatus of claim 1, wherein the first inlier scale is set by a user input.
6. The apparatus of claim 1, wherein the model estimation process is performed using Maximum Feasible Subsystem (MaxFS) as a deterministic method.
7. The apparatus of claim 1, wherein the inlier scale estimation process is performed using at least one method from among Iterative Kth Ordered Scale Estimator (IKOSE), Median (MED), Median Absolute Deviation (MAD), and KOSE.
8. The apparatus of claim 1,
wherein the image data comprises an ultrasound image, and
wherein the first model is a geometric shape, and is one of a straight line, a circle, an ellipse, a plane, a sphere, and a curved surface.
9. The apparatus of claim 1, wherein the first model is a linear or non-linear model that is estimated from the image data and is at least one from among homography estimation, fundamental matrix estimation, optical flow estimation, and motion estimation.
10. An image processing method comprising:
iteratively performing a model estimation process and an inlier scale estimation process on image data including data of a first model, wherein the model estimation process determines a model parameter set from the image data by using an initial inlier scale, and the inlier scale estimation process determines an inlier scale by using the model parameter set, and
determining a final model parameter set and a final inlier scale of the first model based on a result obtained by the iteratively performing of the model estimation process and the inlier scale estimation process,
wherein when the model estimation process is repeated, in the repeated model estimation process, a new model parameter set is determined by using an inlier scale determined according to an immediately previously performed inlier scale estimation process, and
wherein in the inlier scale estimation process, a new inlier scale is determined using a model parameter set determined according to an immediately previously performed model estimation process.
11. The method of claim 10, wherein model parameter sets and inlier scales determined by iteratively performing the model estimation process and the inlier scale estimation process converge to the final model parameter set and the final inlier scale of the first model, respectively.
12. The method of claim 10, when the image data comprises data of multiple models including the first model and a second model, the method further comprising:
performing an inlier removal process whereby first inlier data located within the final inlier scale of the first model is removed from the image data based on the final model parameter set and the final inlier scale of the first model; and
performing a final determination process whereby a final model parameter set and a final inlier scale of the second model are determined by iteratively performing the model estimation process and the inlier scale estimation process on the image data from which the first inlier data has been removed.
13. The method of claim 12, wherein final model parameter sets and final inlier scales of all of the multiple models are determined by iteratively performing, each time a final model parameter set and a final inlier scale of one of the multiple models are determined, the inlier removal process and the final determination process on another one of the multiple models.
14. The method of claim 10, wherein the first inlier scale is set by a user input.
15. The method of claim 10, wherein the model estimation process is performed using Maximum Feasible Subsystem (MaxFS) as a deterministic method.
16. The method of claim 10, wherein the inlier scale estimation process is performed using at least one method from among Iterative Kth Ordered Scale Estimator (IKOSE), Median (MED), Median Absolute Deviation (MAD), and KOSE.
17. The method of claim 10,
wherein the image data comprises an ultrasound image, and
wherein the first model is a geometric shape, and is one of a straight line, a circle, an ellipse, a plane, a sphere, and a curved surface.
18. The method of claim 10, wherein the first model is a linear or non-linear model that is estimated from the image data and is at least one from among homography estimation, fundamental matrix estimation, optical flow estimation, and motion estimation.
19. A non-transitory computer-readable recording medium having recorded thereon a program for executing the method of claim 10 on a computer.