1. An integrated device for oxygenating and filtering blood flowing through an extracorporeal blood circuit comprising:
a blood reservoir having an inlet for receiving venous blood and an outlet for supplying venous blood;
a blood pump having an inlet connected to receive blood from the outlet of the blood reservoir and an outlet;
a heat exchanger having a blood inlet connected to receive venous blood from the outlet of the pump and a blood outlet for supplying temperature controlled venous blood;
an oxygenator having an inlet connected to receive venous blood from the outlet of the heat exchanger and an outlet for supplying oxygenated blood;
an arterial blood filter having an inlet connected to receive oxygenated blood from the outlet of the oxygenator and an outlet for supplying filtered oxygenated blood; and
a monolithic housing including a first portion for defining the blood reservoir, a second portion for defining the blood pump, a third portion for defining the heat exchanger, a fourth portion for defining the oxygenator and a fifth portion for defining the arterial blood filter, the second portion being configured such that the outlet of the blood pump is located at a top of the second portion of the monolithic housing.
2. The integrated device of claim 1 wherein the blood pump comprises a centrifugal pump.
3. The integrated device of claim 2 wherein the centrifugal pump has an axis and wherein the centrifugal pump is positioned within the monolithic housing such that the axis of the centrifugal pump is horizontal.
4. The integrated device of claim 1 wherein the blood reservoir comprises a venous reservoir and a cardiotomy reservoir.
5. The integrated device of claim 4 wherein the monolithic housing comprises connection means for allowing removable connection of the first portion.
6. A system for establishing an extracorporeal blood circuit comprising:
a blood reservoir;
a blood pump;
a heat exchanger;
an oxygenator;
an arterial blood filter; and
a housing for incorporating and interconnecting the blood reservoir, the blood pump, the heat exchanger, the oxygenator and the arterial blood filter into a monolithic structure, the housing having an inlet for supplying venous blood to the blood reservoir and an outlet for supplying oxygenated blood from the arterial blood filter, the housing further having a portion which defines the blood pump including a blood pump inlet and a blood pump outlet, the outlet of the blood pump being located at a top of the portion.
7. The system of claim 6 wherein the blood pump comprises a centrifugal pump.
8. The system of claim 7 wherein the centrifugal pump has an axis and wherein the centrifugal pump is positioned within the housing such that the axis of the centrifugal pump is horizontal.
9. The system of claim 6 wherein the blood reservoir comprises a venous reservoir and a cardiotomy reservoir.
10. The integrated device of claim 9 wherein the housing comprises connection means for allowing removable connection of the blood reservoir.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A pixel structure of a solid-state image sensor employing a charge sorting method that distributes electrons generated by photoelectric conversion to perform charge storage, said structure comprising:
a photodiode that generates electrons by photoelectric conversion;
a plurality of charge-storage sections that store electrons generated in said photodiode; and
a gate structure
that is arranged between said photodiode and said charge-storage sections and
controls transfer of electrons generated in said photodiode to said plurality of the charge- storage sections, wherein
said gate structure is made up of three stages of gates,
said three stages of gates have:
a first-stage gate
that is arranged adjacent to said photodiode
on the rear stage of the photodiode and
controls read-out of electrons generated in said photodiode;
a second-stage gate
that is adjacent to said first-stage gate
on the rear stage of the gate
at a predetermined gap and
controls moving of electrons read out by the readout control of said first-stage gate to said plurality of the charge-storage sections; and
a third-stage gate constituted of a plurality of distribution gates that
are adjacent to said second-stage gate on the rear stage of the gate at a predetermined gap,
severally arranged corresponding to said plurality of the charge-storage sections, and
perform control of distributing the electrons moved by the movement control of said second-stage gate severally to said plurality of the charge-storage sections,
wherein said photodiode comprises
a P-type impurity middle-concentration doped region
having a shape in planar view of a square region from which a trapezoid is cut out and
having an edge positioned adjacent to the trapezoid and the first-stage gate side in planar view, and
an N-type impurity low-concentration doped region
having a square shape
which is stacked on the P-type impurity middle-concentration doped region, and
wherein electrons from the photodiode are moved in the vicinity of said first stage gate by generating a gradient on the potential of said photodiode.
2. The pixel structure of a solid-state image sensor employing a charge sorting method according to claim 1, wherein
said photodiode is formed so as to narrow a potential well in which electrons could exist proportional to distance from said first-stage gate.
3. The pixel structure of a solid-state image sensor employing a charge sorting method according to claim 2, wherein
a substrate impurity doping concentration directly under the end portion of said photodiode on the opposite side of said first-stage gate side and a peripheral area of said photodiode is increased, and the potential well of said photodiode is allowed to unevenly exist at the central portion of said photodiode and in the vicinity of said first-stage gate.
4. The pixel structure of a solid-state image sensor employing a charge sorting method according to claim 1,
wherein said second-stage gate
is provided on a substrate and
covers a channel region of the substrate comprising a P-type impurity concentration and P well regions having a higher P-type impurity doping concentration than remaining portions of the channel region;
wherein
the P wells resist an inversion while
the remaining portions of the channel region invert
when a gate voltage is applied to the second stage gate such that
said second-stage gate
allows electrons to intensively move to an area directly under the central portion of said second-stage gate and
controls the movement of electrons to an area near the boundaries of said plurality of the third-stage gates
when a voltage is applied to said first-stage gate and said second-stage gate.
5. The pixel structure of a solid-state image sensor employing a charge sorting method according to claim 1, wherein
a region
having a low substrate impurity doping concentration
is provided directly under the boundary between each distribution gate in said plurality of the third-stage gates, and
a channel
being a moving route of electrons is formed when a voltage is applied to said distribution gates.
6. The pixel structure of a solid-state image sensor employing a charge sorting method according to claim 1,
wherein said second-stage gate
is provided on a substrate and
covers a channel region of the substrate comprising a P-type impurity concentration and P well regions having a higher P-type impurity doping concentration than remaining portions of the channel region;
wherein
the P wells resist an inversion while
the remaining portions of the channel region invert
when a gate voltage is applied to the second stage gate such that
said second-stage gate
allows electrons to intensively move to an area directly under the central portion of said second-stage gate and
controls the movement of electrons to an area near the boundaries of said plurality of the third-stage gates
when a voltage is applied to said first-stage gate and said second-stage gate; and
a region
having a low substrate impurity doping concentration
is provided directly under the boundary between each distribution gate in said plurality of the third-stage gates, and
a channel
being a moving route of electrons is formed when a voltage is applied to said distribution gates.
7. The pixel structure of a solid-state image sensor employing a charge sorting method according to claim 1, wherein
a pixel structure of said solid-state image sensor is a basic constituent unit, and
four of said basic constituent units are used, said four basic constituent units are symmetrically arranged in vertical and horizontal directions into two pairs, said four basic constituent units are connected in series, and arranged to lighten imbalance of electrons distribution.
8. A pixel structure of a solid-state image sensor employing a charge sorting method that distributes electrons generated by photoelectric conversion to perform charge storage, said structure comprising:
a substrate;
a photodiode in said substrate that generates electrons by photoelectric conversion;
a plurality of charge-storage sections that store electrons generated in said photodiode; and
a gate structure on said substrate
that is arranged between said photodiode and said charge-storage sections and
controls transfer of electrons generated in said photodiode to said plurality of the charge-storage sections, wherein
said gate structure is made up of three stages of gates,
said three stages of gates have:
a first-stage gate
that is arranged adjacent to said photodiode and
controls read-out of electrons generated in said photodiode;
a second-stage gate
that is adjacent to said first-stage gate on the rear stage of the gate at a predetermined gap,
covers a channel region of the substrate comprising a P-type impurity concentration and P well regions having a higher P-type impurity doping concentration than remaining portions of the channel region, and
controls moving of electrons read out by the readout control of said first-stage gate to said plurality of the charge-storage sections; and
a third-stage gate constituted of a plurality of distribution gates
that are adjacent to said second-stage gate on the rear stage of the gate at a predetermined gap,
severally arranged corresponding to said plurality of the charge-storage sections, and
perform control of distributing the electrons moved by the movement control of said second-stage gate severally to said plurality of the charge-storage sections,
wherein
the P wells resist an inversion while
the remaining portions of the channel region invert
when a gate voltage is applied to the second stage gate such that
said second-stage gate
allows electrons to intensively move to an area directly under the central portion of said second-stage gate and
controls the movement of electrons to an area near the boundaries of said plurality of the third-stage gates,
when a voltage is applied to said first-stage gate and said second-stage gate, and
a region of a boundary between said each distribution gate in said third-stage gate is shorter than a gate dimension of said each distribution gate in planar view.
9. The pixel structure of a solid-state image sensor employing a charge sorting method according to claim 8, wherein
a region having a low substrate impurity doping concentration is provided directly under the boundary between each distribution gate in said plurality of the third-stage gates, and an additional channel being a moving route of electrons is formed when a voltage is applied to said distribution gates, and
said region which forms said additional channel is between said each distribution gate in said third- stage gate, and is composed of 30-70% length of said dimension of said gate length of said each distribution gate in planar view.
10. The pixel structure of a solid-state image sensor employing a charge sorting method according to claim 8, wherein
a pixel structure of said solid-state image sensor is a basic constituent unit, and
four of said basic constituent units are used, said four basic constituent units are symmetrically arranged in vertical and horizontal directions into two pairs, said four basic constituent units are connected in series, and arranged to lighten imbalance of electrons distribution.