1. A display device conversion device, converting a video signal inputted to a display device so as to output the video signal to a display panel,
wherein said conversion device converts the video signal by using an inverse function of a sigmoid function obtained by approximating an inputoutput characteristic indicative of a relationship between an input to the display panel and a display output of the display panel,
wherein the sigmoid function is a monotonically increasing function having a saturation characteristic, and
wherein the sigmoid function contains three or more parameters.
2. A display device correction circuit, which corrects a video signal inputted to a display device so as to output the video signal to a display panel, comprising:
a \u03b3 conversion circuit for converting the video signal so that the video signal has a desired \u03b3 characteristic; and
a display device conversion device for converting the video signal by using an inverse function of a sigmoid function obtained by approximating an inputoutput characteristic indicative of a relationship between an input to the display panel and a display output of the display panel, and
a state amount calculation setting circuit for calculating a state amount of an image displayed by the video signal, in accordance with the video signal, so as to set the \u03b3 characteristic of the \u03b3 conversion circuit in accordance with the state amount.
3. The display device correction circuit as set forth in claim 2, wherein the state amount indicates dispersion and an average value of luminance in the image displayed in the display panel.
4. The display device correction circuit as set forth in claim 3, wherein
the state amount calculation setting circuit includes: a luminance calculating section for calculating each pixel luminance of an image displayed in the display panel;
an average calculating section for calculating average luminance of a single image by using said each pixel luminance;
a dispersion calculating section for calculating dispersion of luminance of the single image by using said each pixel luminance; and
data generating section for setting the y characteristic in accordance with the average luminance and the dispersion of the luminance.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a bi-layer attenuating phase shifting mask blank, comprising:
providing a transparent substrate;
forming a first thickness of a first aluminum-silicon oxide blanket attenuating phase shifting layer on said transparent substrate, wherein said first aluminum-silicon oxide blanket attenuating phase shifting layer has a formula of AlSix1Oy1; and
forming a second thickness of a second aluminum-silicon oxide blanket attenuating phase shifting layer on said first aluminum-silicon oxide blanket attenuating phase shifting layer, wherein said second aluminum-silicon oxide blanket attenuating phase shifting layer has a formula of AlSix2Oy2.
2. The method of claim 1 wherein x1 is between about 0.38 and 0.52 and y1 is between about 0.48 and 0.66.
3. The method of claim 1 wherein x2 is between about 0.18 and 0.29 and y2 is between about 1.02 and 1.17.
4. The method of claim 1 wherein the transmittance of said first aluminum-silicon oxide blanket attenuating phase shifting layer is between about 5% and 35%.
5. The method of claim 1 wherein the transmittance of said second aluminum-silicon oxide blanket attenuating phase shifting layer is between about 20% and 60%.
6. The method of claim 1 wherein the transmittance of said transparent substrate, said first thickness of said first aluminum-silicon oxide blanket attenuating phase shifting layer formed on said transparent substrate, and said second thickness of said second aluminum-silicon oxide blanket attenuating phase shifting layer formed on said first aluminum-silicon oxide blanket attenuating phase shifting layer is between about 15% and 45%.
7. The method of claim 1 wherein the combination of said second thickness of said second aluminum-silicon oxide blanket attenuating phase shifting layer formed on said first thickness of said first aluminum-silicon oxide blanket attenuating phase shifting layer provides a phase shift of 180.degree.
8. The method of claim 1 wherein said first thickness is between about 24 and 60 Angstroms.
9. The method of claim 1 wherein said second thickness is between about 24 and 60 Angstroms.
10. The method of claim 1 wherein said first aluminum-silicon oxide blanket attenuating phase shifting layer and said second aluminum-silicon oxide blanket attenuating phase shifting layer are each formed using sputter deposition in a sputter chamber comprising an aluminum target, a silicon target, a direct current power supplied to said silicon target, oxygen gas supplied to said sputtering chamber at a first flow rate, and argon gas supplied to said sputtering chamber at a second flow rate.
11. The method of claim 10 wherein said direct current power is between about 100 and 200 watts.
12. The method of claim 10 wherein said first flow rate is between about 0.8 and 2.2 standard cubic centimeters per minute.
13. The method of claim 1 wherein said first thickness of said first aluminum-silicon oxide blanket attenuating phase shifting layer has an index of refraction of between about 1.5 and 2.6.
14. The method of claim 1 wherein said second thickness of said second aluminum-silicon oxide blanket attenuating phase shifting layer has an index of refraction of between about 1.5 and 2.6.
15. The method of claim 1 wherein said first thickness of said first aluminum-silicon oxide blanket attenuating phase shifting layer has an extinction coefficient of between about 0.11 and 0.41.
16. The method of claim 1 wherein said second thickness of said second aluminum-silicon oxide blanket attenuating phase shifting layer has an extinction coefficient of between about 0.11 and 0.41.
17. A bi-layer attenuating phase shifting mask blank, comprising:
a transparent substrate;
a first thickness of a first aluminum-silicon oxide blanket attenuating phase shifting layer formed on said transparent substrate, wherein said first aluminum-silicon oxide blanket attenuating phase shifting layer has a formula of AlSix1Oy1; and
a second thickness of a second aluminum-silicon oxide blanket attenuating phase shifting layer formed on said first aluminum-silicon oxide blanket attenuating phase shifting layer, wherein said second aluminum-silicon oxide blanket attenuating phase shifting layer has a formula of AlSix2Oy2.
18. The bi-layer attenuating phase shifting mask blank of claim 17 wherein x1 is between about 0.38 and 0.52 and y1 is between about 0.48 and 0.66.
19. The bi-layer attenuating phase shifting mask blank of claim 17 wherein x2 is between about 0.18 and 0.29 and y2 is between about 1.02 and 1.17.
20. The hi-layer attenuating phase shifting mask blank of claim 17 wherein the transmittance of said first aluminum-silicon oxide blanket attenuating phase shifting layer is between about 5% and 35%.
21. The bi-layer attenuating phase shifting mask blank of claim 17 wherein the transmittance of said second aluminum-silicon oxide blanket attenuating phase shifting layer is between about 20% and 60%.
22. The bi-layer attenuating phase shifting mask blank of claim 17 wherein the transmittance of said transparent substrate, said first thickness of said first aluminum-silicon oxide blanket attenuating phase shifting layer formed on said transparent substrate, and said second thickness of said second aluminum-silicon oxide blanket attenuating phase shifting layer formed on said first aluminum-silicon oxide blanket attenuating phase shifting layer is between about 15% and 45%.
23. The bi-layer attenuating phase shifting mask blank of claim 17 wherein the combination of said second thickness of said second aluminum-silicon oxide blanket attenuating phase shifting layer formed on said first thickness of said first aluminum-silicon oxide blanket attenuating phase shifting layer provides a phase shift of 180.degree.
24. The bi-layer attenuating phase shifting mask blank of claim 17 wherein said first thickness is between about 24 and 60 Angstroms.
25. The bi-layer attenuating phase shifting mask blank of claim 17 wherein said second thickness is between about 24 and 60 Angstroms.
26. The bi-layer attenuating phase shifting mask blank of claim 17 wherein said first thickness of said first aluminum-silicon oxide blanket attenuating phase shifting layer has an index of refraction of between about 1.5 and 2.6.
27. The bi-layer attenuating phase shifting mask blank of claim 17 wherein said second thickness of said second aluminum-silicon oxide blanket attenuating phase shifting layer has an index of refraction of between about 1.5 and 2.6.
28. The bi-layer attenuating phase shifting mask blank of claim 17 wherein said first thickness of said first aluminum-silicon oxide blanket attenuating phase shifting layer has an extinction coefficient of between about 0.11 and 0.41.
29. The bi-layer attenuating phase shifting mask blank of claim 17 wherein said second thickness of said second aluminum-silicon oxide blanket attenuating phase shifting layer has an extinction coefficient of between about 0.11 and 0.41.