1. Gemstone, characterized by a preferably plate-shaped support having a surface with at least one pyramid-shaped depression and supporting a precious stone layer (1) produced by gas phase deposition.
2. Gemstone according to claim 1, characterized in that the support is silicon wafer.
3. Gemstone according to claim 2, characterized in that the support is a wafer of (100) or (111) orientation.
4. Gemstone according to claim 1, characterized in that the support is comprised of a precious metal.
5. Gemstone according to claim 1, characterized in that the support is comprised of hard metal.
6. Gemstone according to claim 1, characterized in that the support is comprised of a refractive metal such as tungsten or molybdenum.
7. Gemstone according to one of the claims 1 through 6, characterized in that the pyramid-shaped depressions are produced by mechanical, for example, cutting or stamping, means.
8. Gemstone according to one of the claims 1 through 6, characterized in that the pyramid-shaped depressions are produced by etching.
9. Gemstone according to one of the preceding claims, characterized in that the pyramid angle of the depressions within a support may differ.
10. Gemstone according to one of the preceding claims, characterized in that the pyramid angle of the depressions is approximately 109.
11. Gemstone, according to one of the preceding claims, characterized in that the grain boundaries of the precious stone layer (1) are aligned in a column shape.
12. Gemstone according to one of the preceding claims, characterized in that the pyramid-shaped depressions have a mirror surface.
13. Gemstone according to one of the preceding claims, characterized in that the surface of the precious stone layer (1) is cut.
14. Gemstone according to one of the preceding claims, characterized in that the gemstone layer (1) has its, own color produced by doping.
15. Gemstone according to one of the proceeding claims, characterized in that the surface of the support supporting the precious stone layer (1) is curved.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A display device having an anode and a plurality of emitters comprising:
at least one emitter located opposite to the anode being electrically isolated therefrom;
an insulating layer having at least one conductive line embedded therein;
a PN junction disposed adjacent the at least one emitter; and
a radiation blocker for passing electrons emitted from the at least one emitter to the anode while blocking radiation from at least a portion of the anode.
2. The device as in claim 1, further comprising a grid located between the at least one emitter and the anode and the radiation blocker disposed on the grid.
3. The device as in claim 2, further comprising a grid located between the at least one emitter and the anode, the grid comprising the radiation blocker.
4. The device as in claim 2, wherein the radiation blocker comprises an X-ray-absorbing material.
5. The device as in claim 4, wherein the radiation blocker comprises a material chosen from a group consisting of: Tungsten, Lead, and Titanium.
6. The device as in claim 4, wherein the radiation blocker comprises: two layers of X-ray-absorbing material having different X-ray-absorbing abilities.
7. The device as in claim 6, wherein a first X-ray-absorbing layer comprises Tungsten.
8. The device as in claim 7, wherein a second X-ray-absorbing layer comprises Titanium.