1. A CMOS image sensor comprising:
a semiconductor substrate having an active region;
a photodiode formed in the active region of the semiconductor substrate, and generating an optical electric charge in accordance with irradiation of light;
an insulating interlayer formed on an entire surface of the semiconductor substrate; and
a micro lens formed on the insulating interlayer in perpendicular to the photodiode,
wherein, a back-bias voltage is applied to the semiconductor substrate to vary a width of a depletion area of the photodiode and the value of the back-bias voltage corresponds to a wavelength of red, green or blue light.
2. The CMOS image sensor of claim 1, further comprising:
a back-bias voltage generation part converting the back-bias voltage to a plurality of different values;
an optical electric charge transmission part formed in the active region of the semiconductor substrate, and transmitting the optical electric charge generated in the photodiode; and
an optical color sensitivity calculation part formed in the active region of the semiconductor substrate, and calculating the color sensitivity of red, green and blue light in accordance with an optical wavelength within the depletion area from the width of the depletion area of the photodiode and a current value of the optical electric charge.
3. The CMOS image sensor of claim 1, further comprising a planarization layer between the insulating interlayer and the micro lens.
4. A CMOS image sensor comprising:
a p-type semiconductor substrate having a plurality of active regions;
a plurality of photodiodes formed in the respective active regions of the p-type semiconductor substrate, and converting light signals to electric signals;
a plurality of p-type impurity regions formed on the p-type semiconductor substrate at one side in each photodiode;
an insulating interlayer formed on the p-type semiconductor substrate; and
a plurality of micro lens formed on the insulating interlayer corresponding to the photodiodes,
wherein, different back-bias voltages are applied to the p-type impurity regions to vary a width of a depletion area in each photodiode and the back-bias voltages applied to the p-type impurity region each correspond to a wavelength of blue, green and red light.
5. The CMOS image sensor of claim 4, further comprising a planarization layer between the insulating interlayer and the micro lens.
6. A method for sensing optical color sensitivity of a CMOS image sensor, having a photodiode in an active region of a semiconductor substrate without forming a color filter layer, comprising:
applying a first back-bias voltage to the semiconductor substrate so as to form a first width in a depletion area of the photodiode;
measuring a first current value of an optical electric charge generated in the photodiode in accordance with the applied first back-bias voltage;
applying a second back-bias voltage to the semiconductor substrate so as to form a second width in a depletion area of the photodiode;
measuring a second current value of an optical electric charge generated in the photodiode in accordance with the applied second back-bias voltage;
applying a third back-bias voltage to the semiconductor substrate so as to form a third width in a depletion area of the photodiode;
measuring a third current value of an optical electric charge generated in the photodiode in accordance with the applied third back-bias voltage; and
calculating the optical color sensitivity by applying the measured first, second and third current values.
7. The method of claim 6, wherein the first, second and third back-bias voltages are respectively corresponding to the wavelength of blue, green and red light.
8. The method of claim 6, wherein any one of the first, second and third back-bias voltages is set as 0V.
9. A method for sensing optical color sensitivity of a CMOS image sensor, having at least a first, a second and a third photodiode, at least a first, a second and a third impurity region to apply a back-bias voltage to each photodiode without forming a color filter layer, comprising:
applying first, second and third back-bias voltages different from one another to the first, second and third impurity regions;
measuring first, second and third current values of optical electric charges generated in the first, second and third photodiodes in accordance with the applied first, second and third back-bias voltages; and
calculating the color sensitivity of light by applying the measured first, second and third current values.
10. The method of claim 9, wherein the first, second and third back-bias voltages are respectively corresponding to the wavelength of blue, green and red light.
11. The method of claim 9, wherein any one of the first, second and third back-bias voltages is set as 0V.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A functional device comprising:
a movable member that can be displaced along a first axis;
a movable electrode part extended from the movable member;
a fixed electrode part provided to be opposed to the movable electrode part; and
a stopper part that regulates displacement of the movable member,
wherein a projecting part projecting along the first axis is provided on the movable member, and
a distance between an end of the projecting part and the stopper part is shorter than a distance between the movable electrode part and the fixed electrode part.
2. The functional device according to claim 1, further comprising a fixed part connected to the movable member,
wherein the fixed part and the stopper part are integrally provided.
3. The functional device according to claim 1, further comprising a first fixed part and a second fixed part connected to the movable member,
wherein the first fixed part and the second fixed part are provided on both sides of the stopper part, and
the first fixed part and the movable member are connected by a first beam part and the second fixed part and the movable member are connected by a second beam part.
4. The functional device according to claim 3, wherein at least a part of the projecting part is provided between the first beam part and the second beam part.
5. The functional device according to claim 1, wherein the movable member and the stopper part are at the same potential.
6. The functional device according to claim 1, wherein a projection is provided on at least one of opposed surfaces of the stopper part and the projection part.
7. A functional device comprising:
a movable member that can be displaced along a first axis;
a movable electrode part extended from the movable member;
a fixed electrode part provided to be opposed to the movable electrode part;
a stopper part that regulates displacement of the movable member;
a first fixed part and a second fixed part provided on both sides of the stopper part;
a first beam part that connects the first fixed part and the movable member; and
a second beam part that connects the second fixed part and the movable member,
wherein the stopper part is provided to project toward the movable member, and
a distance between the stopper part and the movable member is shorter than a distance between the movable electrode part and the fixed electrode part.
8. The functional device according to claim 7, wherein at least a part of the stopper part is provided between the first beam part and the second beam part.
9. The functional device according to claim 7, wherein the movable member and the stopper part are at the same potential.
10. The functional device according to claim 7, wherein a projection is provided on a surface opposed to the movable member in the stopper part.
11. An electronic apparatus comprising the functional device according to claim 1.
12. An electronic apparatus comprising the functional device according to claim 7.
13. A moving object comprising the functional device according to claim 1.
14. A moving object comprising the functional device according to claim 7.