1. A method of manufacturing a flip-chip type semiconductor device comprising the steps of:
forming a pad electrode on a semiconductor substrate;
forming an insulating film on the entire surface of the semiconductor substrate and removing the insulating film on the pad electrode to form an opening;
forming a metal thin film layer on the entire surface of the semiconductor substrate and patterning the metal thin film layer to form a wiring portion;
forming a resist film on the entire surface of the semiconductor substrate, patterning the resist film to remove the resist film on the wiring portion, and forming an opening to form an electrode in the opening;
forming a metal bump on the electrode;
arranging a support plate above the semiconductor substrate with an appropriate interval between said support plate and said semiconductor substrate, said support plate having holes each having a diameter larger than the diameter of the metal bump and formed at positions adjusted to the positions where the metal bump are arranged; and
injecting an insulating resin between the semiconductor substrate and the support plate.
2. A method of manufacturing a flip-chip type semiconductor device according to claim 1, wherein the support plate is made of a conductive material, and an insulating film and a metal film are formed on the support plate in the order named, and said method comprises burying a conductive adhesive agent into the hole of the support plate located at the metal bump, having the ground potential, of the metal bumps is held.
3. A method of manufacturing a flip-chip type semiconductor device according to claim 1, wherein the support plate is made of an insulating material, and a metal film is formed on the surface of the insulating material, and said method comprises burying a conductive adhesive agent into a hole of the support plate located at a metal bump, having a ground potential, of the metal bumps.
4. A method of manufacturing a flip-chip type semiconductor device according to claim 1, wherein the support plate is arranged above the semiconductor substrate by arranging jigs each having an appropriate thickness at both ends of the semiconductor substrate and placing the support plate on said jigs.
5. A method of manufacturing a flip-chip type semiconductor device according to claim 1, wherein a periphery of a joint portion between the metal bump and the electrode is covered with the insulating resin layer.
6. A method of manufacturing a flip-chip type semiconductor device according to claim 1, wherein the insulating resin layer contains at least one resin selected from the group consisting of an epoxy-based resin, a silicon based resin, a polymide-based resin, a polyolefin-based resin, a cyanate ester-based resin, a phenol-based resin, a naphthalene-based resin, and a fluorene-based resin.
7. A method of manufacturing a flip-chip type semiconductor device according to claim 1, wherein the insulating film is made of a photosensitive material.
8. A method of manufacturing a flip-chip type semiconductor device according to claim 1, wherein the insulating film has a thermal decomposition temperature of not less than 200 degrees Celsius.
9. A method of manufacturing a flip-chip type semiconductor device comprising the steps of:
providing a semiconductor substrate including a pad electrode and an insulating film on a first area of a surface of the semiconductor substrate, the first surface not including the pad electrode;
providing a patterned metal thin film layer on a second area of the surface of the semiconductor substrate to form a wiring portion;
providing a patterned resist film on a third area of the surface of the semiconductor substrate, the third area not overlapping the first and second areas; providing at least one metal bump on the electrode;
arranging a support plate above and spaced away from the semiconductor substrate, the support plate having at least one hole; and
injecting an insulating resin between the semiconductor substrate and the support plate; wherein a first number of holes is equal to a second number of metal bumps, each hole includes a first diameter larger than a second diameter of each metal bump, and each hole is at a first position corresponding to a second position of each metal bump.
10. A method of manufacturing a flip-chip type semiconductor device according to claim 9, wherein the support plate is made of a conductive material, and an insulating film and a metal film are formed on the support plate in the order named, and said method comprises burying a conductive adhesive agent into the hole of the support plate located at the metal bump, having the ground potential, of the metal bumps is held.
11. A method of manufacturing a flip-chip type semiconductor device according to claim 9, wherein the support plate is made of an insulating material, and a metal film is formed on the surface of the insulating material, and said method comprises burying a conductive adhesive agent into a hole of the support plate located at a metal bump, having a ground potential, of the metal bumps.
12. A method of manufacturing a flip-chip type semiconductor device according to claim 9, wherein the support plate is arranged above the semiconductor substrate by arranging jigs each having an appropriate thickness at both ends of the semiconductor substrate and placing the support plate on said jigs.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A mobile communication device, comprising:
a liquid crystal (LC) panel consisting of a first substrate and a second substrate;
a drive integrated circuit mounted at the end of an upper surface of the second substrate;
a keypad printed circuit board (PCB) having a keypad connected to the drive integrated circuit;
a flexible printed circuit board (FPCB) for connecting the drive integrated circuit and the keypad PCB to each other;
a conductive tape attached to one end of the first substrate, the second substrate that is not overlapping the first substrate, and a region of the FPCB, and provided with a second groove having a size equal to or larger than that of the drive integrated circuit so that a part of the second substrate is exposed through the second groove and the drive integrated circuit is mounted on the exposed region of the second substrate, thereby the conductive tape is not overlapped with the drive integrated circuit; and
a backlight assembly having an outer case, for supplying light to the LC panel,
wherein, each region of the conductive tape that is attached to first substrate, second substrate and FPCB are connected.
2. The mobile communication device of claim 1, wherein a fixing member is provided at an intersection between the FPCB and one end of the outer case of the backlight assembly, thereby fixing the FPCB and the backlight assembly.
3. The mobile communication device of claim 2, wherein the fixing member is a ultraviolet rays hardened material.