1. An optical structure, comprising:
an optical active medium of a solid state laser, wherein the optical active medium has a first coefficient of thermal expansion; and
at least one protective structure that is directly cladded at least a portion of an outside surface of the optical active medium,
wherein the at least one protective structure has a second coefficient of thermal expansion which sufficiently matches the first coefficient of thermal expansion of the optical active medium of the solid state laser, and
wherein the at least one protective structure is sufficiently transparent to at least one wavelength, wherein the at least one wavelength is within at least one absorption band of the optical active medium of the solid state laser;
hereby resulting in the optical structure of the solid state laser having:
i) the optical active medium of the solid state laser that is protected from a physical damage when the optical active medium of the solid state laser is heated to a temperature above 80 degrees Celsius, wherein the physical damage renders the optical active medium of the solid state laser inoperable, and
ii) the optical active medium of the solid state laser that is capable of generating a laser beam having a first energy that is larger than a second energy generated by a control optical structure that comprises the optical active medium of the solid state laser without the at least one protective structure.
2. The optical structure of claim 1, wherein the at least one protective structure is a thermal insulator.
3. The optical structure of claim 1, wherein the at least one protective structure is sufficiently water-resistant at the temperature above 80 degrees Celsius.
4. The optical structure of claim 1, wherein the at least one protective structure seals at least one surface of the optical active medium of the solid state laser.
5. The optical structure of claim 1, wherein the at least one protective structure contacts an entire portion of the outside surface of the optical active medium of the solid state laser.
6. The optical structure of claim 1, wherein the at least one protective structure is created when at least one protective composition is deposited onto the optical active medium of the solid state laser.
7. The optical structure of claim 1, wherein the at least one protective structure is created when at least one protective composition having a semi-fluid character wets the at least portion of the optical active medium of the solid state laser when the at least one protective composition is drawn over the at least portion of the optical active medium of the solid state laser.
8. The optical structure of claim 7, wherein the at least one protective structure comprises at least one protective composition having one or more glass or glass-like properties.
9. The optical structure of claim 1, wherein the optical active medium of the solid state laser comprises a laser crystal.
10. The optical structure of claim 1, wherein the laser crystal is selected from the group consisting of: alexandrite, Cr:LiSAF, Cr:LiCAF, Nd:YAG, NdCrYAG, Er:YAG, Nd:YLF, Ti:sapphire, Nd:YVO4, Nd:YCOB, Nd:Glass, Tm:YAG, Yb:YAG, Ytterbium:2O3 (glass or ceramics), Ho:YAG, Cr:ZnSe, Promethium 147 doped phosphate glass (147Pm+3:Glass), Erbium doped and erbium-ytterbium codoped glass, U:CaF2, and Sm:CaF2.
11. An optical system, comprising:
an optical structure, comprising:
an optical active medium of a solid state laser, wherein the optical active medium has a first coefficient of thermal expansion; and
at least one protective structure that is directly cladded at least a portion of an outside surface of the optical active medium,
wherein the at least one protective structure has a second coefficient of thermal expansion which sufficiently matches the first coefficient of thermal expansion of the optical active medium of the solid state laser, and
wherein the at least one protective structure is sufficiently transparent to at least one wavelength, wherein the at least one wavelength is within at least one absorption band of the optical active medium of the solid state laser;
hereby resulting in the optical structure of the solid state laser having:
i) the optical active medium of the solid state laser that is protected from a physical damage when the optical active medium of the solid state laser is heated to a temperature above 80 degrees Celsius, wherein the physical damage renders the optical active medium of the solid state laser inoperable, and
ii) the optical active medium of the solid state laser that is capable of generating a laser beam having a first energy that is larger than a second energy generated by a control optical structure that comprises the optical active medium of the solid state laser without the at least one protective structure.
12. The optical system of claim 11, wherein the at least one protective structure is a thermal insulator.
13. The optical system of claim 11, wherein the at least one protective structure is sufficiently water-resistant at the temperature above 80 degrees Celsius.
14. The optical system of claim 11, wherein the at least one protective structure directly contacts the optical active medium of the solid state laser.
15. The optical system of claim 11, wherein the at least one protective structure seals at least one surface of the optical active medium of the solid state laser.
16. The optical system of claim 11, wherein the at least one protective structure contacts an entire portion of the outside surface of the optical active medium of the solid state laser.
17. The optical system of claim 11, wherein the at least one protective structure is created when at least one protective composition is deposited onto the optical active medium of the solid state laser.
18. The optical system of claim 11, wherein the at least one protective structure is created when at least one protective composition having a semi-fluid character wets the at least portion of the optical active medium of the solid state laser when the at least one protective composition is drawn over the at least portion of the optical active medium of the solid state laser.
19. The optical system of claim 18, wherein the at least one protective structure comprises at least one protective composition having one or more glass or glass-like properties.
20. The optical system of claim 11, wherein the optical active medium of the solid state laser comprises a laser crystal.
21. The optical system of claim 11, wherein the laser crystal is selected from the group consisting of: alexandrite, Cr:LiSAF, Cr:LiCAF, Nd:YAG, NdCrYAG, Er:YAG, Nd:YLF, Ti:sapphire, Nd:YVO4, Nd:YCOB, Nd:Glass, Tm:YAG, Yb:YAG, Ytterbium:2O3 (glass or ceramics), Ho:YAG, Cr:ZnSe, Promethium 147 doped phosphate glass (147Pm+3:Glass), Erbium doped and erbium-ytterbium codoped glass, U:CaF2, and Sm:CaF2.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electron beam apparatus which is provided with at least an electron gun, an electron lens that includes an objective lens, and accelerates and converges an electron discharged from the electron gun to form the electron into a probe electron beam, a deflector that deflects the probe electron beam, a sample stage on which an observation sample is mounted, display means that displays an observed image of the observation sample, and a controller that controls the functions, and converges the probe electron beam on the observation sample to detect the electron generated from the observation sample for observation of a microstructure of the observation sample, comprising:
a visualizing means that is selected from the group consisting of a reflective plate, an optical system, andor a detector having a hole or a dead zone at a center thereof, the visualizing means including a retarding power source that applies an electric field for decelerating the probe electron beam between the objective lens and the observation sample, and visualizes a displacement, that arises from an irregular cross-sectional shape of the observation sample surface, of a retarding electric field from an axial symmetry in a region through which the probe electron beam passes between the objective lens and the observation sample upon application of a retarding voltage, and
displacement reducing means that reduces the displacement of the electric field based on a result of the visualization, wherein
the displacement reducing means is a mechanism that inclines the sample stage, and includes 2-axis or 1-axis inclination and 1-axis rotation,
the visualizing means includes first means that directly detects the electron generated from the observation sample using the detector, which is located above the observation sample, or second detection means that detects an electron generated from a plate with a circular hole, which has been generated as a result of impingement of the electron generated from the sample on the plate, and
the controller has a function of setting a deflection range of the probe electron beam and a lens condition of the electron lens for convergence so as to provide a circular dark region representing that the electron generated from the observation sample is in the hole or the dead zone of the first means, or the hole of the plate, and a bright region or a bright annular region representing that the detection electron is increased by irradiating a sensitive zone of the first means or a rim of the hole of the plate, and controlling the inclination mechanism of the sample stage so that the annular region is brought to a center of the image, and further has a control panel or a switch for activating the function.
2. An electron beam apparatus which is provided with at least an electron gun, an electron lens that includes an objective lens, and accelerates and converges an electron discharged from the electron gun to form the electron into a probe electron beam, a deflector that deflects the probe electron beam, a sample stage on which an observation sample is mounted, display means that displays an observed image of the observation sample, and a controller that controls the functions, and converges the probe electron beam on the observation sample to detect the electron generated from the observation sample for observation of a microstructure of the observation sample, comprising:
a visualizing means that is selected from the group consisting of a reflective plate, an optical system, andor a detector having a hole or a dead zone at a center thereof, the visualizing means including a retarding power source that applies an electric field for decelerating the probe electron beam between the objective lens and the observation sample, and visualizes a displacement, that arises from an irregular cross-sectional shape of the observation sample surface of a retarding electric field from an axial symmetry in a region through which the probe electron beam passes between the objective lens and the observation sample upon application of a retarding voltage, and
displacement reducing means that reduces the displacement of the electric field based on a result of the visualization, wherein
the visualizing means has a function that changes the retarding voltage to have a desired period to visualize a visual field displacement of the observed image; and
the controller has a function that controls a sample stage inclination mechanism so that an oscillation of the observed image is set to zero or minimized, and includes a control panel or a switch for activating the functions.
3. The electron beam apparatus according to claim 1, wherein the visualizing means changes the retarding voltage, and visualizes the displacement of the electric field as a non-symmetry of the observed image under a mirror condition in which an energy generated upon incidence of the probe electron beam to the sample is set to a value around 0 eV, and application of the probe electron beam to the sample is not allowed.
4. The electron beam apparatus according to claim 1, wherein a function that automatically adjusts an inclination of the sample stage is provided so that the displacement from the axial symmetry is minimized.
5. The electron beam apparatus according to claim 2, wherein a function that automatically adjusts an inclination of the sample stage is provided so that the displacement from the axial symmetry is minimized.
6. The electron beam apparatus according to claim 3, wherein a function that adjusts an inclination of the sample stage is provided so that the displacement from the axial symmetry is minimized.
7. The electron beam apparatus according to claim 4, wherein the visualizing means further includes a function that changes the retarding voltage to have a desired period and visualizes the visual field displacement of the observed image.
8. The electron beam apparatus according to claim 4, wherein the visualizing means further changes the retarding voltage, and visualizes the displacement of the electric field as a non-symmetry of the observed image under a mirror condition in which an energy generated upon incidence of the probe electron beam to the sample is set to a value around 0 eV, and application of the probe electron beam to the sample is not allowed.
9. The electron beam apparatus according to claim 5, wherein the visualizing means further changes the retarding voltage, and visualizes the displacement of the electric field as a non-symmetry of the observed image under a mirror condition in which an energy generated upon incidence of the probe electron beam to the sample is set to a value around 0 eV, and application of the probe electron beam to the sample is not allowed.
10. The electron beam apparatus according to claim 7, wherein the visualizing means further changes the retarding voltage, and visualizes the displacement of the electric field as a non-symmetry of the observed image under a mirror condition in which an energy generated upon incidence of the probe electron beam to the sample is set to a value around 0 eV, and application of the probe electron beam to the sample is not allowed.
11. The electron beam apparatus according to claim 3, wherein means for changing an incident energy of the probe electron beam to the observation sample is allowed to select at least three points of the retarding voltage.
12. The electron beam apparatus according to claim 4, wherein means for changing the incident energy of the probe electron beam to the observation sample is allowed to select at least three points of the retarding voltage.
13. The electron beam apparatus according to claim 12, wherein the sample stage includes a sample stage for observing a semiconductor cross-section sample, and an acceleration of the probe electron beam is set to a value in a range from 3 kV to 5 kV upon observation of a cross-section of the sample.
14. An electron beam apparatus which includes an electron gun, acceleration means that accelerates an electron discharged from the electron gun so as to be formed into a probe electron beam, a sample stage on which a sample is mounted, deceleration means that decelerates the accelerated probe electron beam so as to be radiated to the sample, a controller for controlling of them, and a display device connected to the controller, comprising:
a visualizing means that is selected from the group consisting of a reflective plate, an optical system, andor a detector having a hole or a dead zone at a center thereof, the visualizing means visualizing a displacement, that arises from an irregular cross-sectional shape of the observation sample surface, of an electric field generated by the deceleration means from an axial symmetry,
reducing means that reduces the displacement from the axial symmetry, and
an operation panel that reduces the displacement from the axial symmetry by the reducing means based on an image visualized by the visualizing means, wherein
the reflective plate has a hole through which the probe electron passes, and
the visualizing means includes image forming control means that allows formation of a focal point of a secondary electron and a backscattered electron from the sample on the reflective plate, and deflector control means that deflects the secondary electron and the backscattered electron so as to be impinged on the reflective plate with the hole.
15. An electron beam apparatus which includes an electron gun, acceleration means that accelerates an electron discharged from the electron gun so as to be formed into a probe electron beam, a sample stage on which a sample is mounted, deceleration means that decelerates the accelerated probe electron beam so as to be radiated to the sample, a controller for controlling of them, and a display device connected to the controller, comprising:
a visualizing means that is selected from the group consisting of a reflective plate, an optical system, andor a detector having a hole or a dead zone at a center thereof, the visualizing means visualizing a displacement, that arises from an irregular cross-sectional shape of the observation sample surface, of an electric field generated by the deceleration means from an axial symmetry,
reducing means that reduces the displacement from the axial symmetry, and
an operation panel that reduces the displacement from the axial symmetry by the reducing means based on an image visualized by the visualizing means, wherein
the visualizing means includes a wobbler power source that superposes an alternating-current signal on the deceleration means.
16. The electron beam apparatus according to claim 14, wherein:
the displacement reducing means includes an inclination rotation mechanism of the sample stage; and
the operation panel includes rotation angle adjustment means that adjusts a rotation angle of the sample stage and inclination angle adjustment means that adjusts an inclination angle using the inclination rotation mechanism via the controller, and is used for reducing the displacement from the axial symmetry.
17. The electron beam apparatus according to claim 16, wherein the operation panel further includes incident energy adjustment means that adjusts the incident energy of the probe electron beam to the sample by the deceleration means via the controller.