1. A semiconductor device comprising:
at least two layers of interlayer-insulator-films stacked above a substrate and at least partially formed by a low-relative-dielectric-constant-film having a relative-dielectric-constant of 3.4 or less respectively;
a plurality of wirings provided, wherein at least one wiring is within each of the interlayer-insulator-film and at least partially located within the low-relative-dielectric-constant-films;
a plurality of plugs provided, wherein at least one plug is within each of the interlayer-insulator-film and connected to a lower part of the wirings; and
a plurality of reinforcement members provided, wherein at least one reinforcement member is within each of the interlayer-insulator-film while being separated from the wirings at a predetermined interval, electrically cut from the wirings and the plugs, and at least partially located within the low-relative-dielectric-constant-films; and wherein,
for each of the reinforcement member, a value obtained by dividing an area of a part that is exposed on an upper face of each of the interlayer-insulator-film by a length of a part contacting each of the interlayer-insulator-film of the part that is exposed on the upper face of each of the interlayer-insulator-film is defined to be S;
a Young’s modulus of a respective layer on which the plug is provided among the interlayer-insulator-films is defined to be EP;
a Young’s modulus of a respective layer on which the wiring is provided among the interlayer-insulator-films is defined to be EW;
a Young’s modulus of the wirings is defined to be EM;
a film thickness of a respective layer on which the plug is provided among the interlayer-insulator-films is defined to be dP;
a film thickness of a respective layer on which the wiring is provided among the interlayer-insulator-films are defined to be dW;
a coverage of the reinforcement member per unit area in an area in the interlayer-insulator-films where the reinforcement members are provided is defined to be R; and
the S, the Ep, the EW, the EM, the dP, the dW, and the R satisfy a relation shown in the following formula for each of the interlayer-insulator-film:
0.025
\xd7
(
E
P
\xd7
d
P
+
(
E
W
\xd7
(
1
–
R
)
+
E
M
\xd7
R
)
\xd7
d
W
d
P
+
d
W
)
0.4
<
S
<
0.0625
\xd7
(
E
P
\xd7
d
P
+
(
E
W
\xd7
(
1
–
R
)
+
E
M
\xd7
R
)
\xd7
d
W
d
P
+
d
W
)
0.4
.
2. The device according to claim 1, wherein
the S, the EP, the EW, the EM, the dP, the dW, and the R satisfy a relation shown in the following formula for each of the interlayer-insulator-film:
0.03
\xd7
(
E
P
\xd7
d
P
+
(
E
W
\xd7
(
1
–
R
)
+
E
M
\xd7
R
)
\xd7
d
W
d
P
+
d
W
)
0.4
<
S
<
0.05
\xd7
(
E
P
\xd7
d
P
+
(
E
W
\xd7
(
1
–
R
)
+
E
M
\xd7
R
)
\xd7
d
W
d
P
+
d
W
)
0.4
.
3. The device according to claim 1, wherein
at least one layer of the layers on which the plugs are provided and the layers on which the wirings are provided of the interlayer-insulator-films, comprises a stacking film of at least two layers of insulator films;
a Young’s modulus of an i-th insulator film from top or bottom of this stacking film is defined to be Ei;
a film thickness of the i-th insulator film is defined to be di;
a complex Young’s modulus that is a Young’s modulus of the entire stacking film is defined to be EC;
a total film thickness of the entire stacking film is defined to be dT;
the Ei, the di, the EC, and the dT satisfy a relation shown in the following formulas;
E
C
=
\u2211
i
\u2062
E
i
\u2062
d
i
\u2211
i
\u2062
d
i
\u2062
\u2062
(
i
\u2062
:
\u2062
\u2062
Natural
\u2062
\u2062
number
\u2062
\u2062
not
\u2062
\u2062
less
\u2062
\u2062
than
\u2062
\u2062
1
)
d
T
=
\u2211
i
\u2062
d
i
\u2062
(
i
\u2062
:
\u2062
\u2062
Natural
\u2062
\u2062
number
\u2062
\u2062
not
\u2062
\u2062
less
\u2062
\u2062
than
\u2062
\u2062
1
)
a Young’s modulus of the entire layer formed by the stacking film among the Young’s modulus EP of the layers where the plugs are provided and the Young’s modulus EW of the layers where the wirings are provided is defined to be the complex Young’s modulus EC; and
a film thickness of the entire layer formed by the stacking film among the film thickness dP of the layers where the plugs are provided and a film thickness dW of the layers where the wirings are provided is defined to be the total film thickness dT.
4. The device according to claim 1, wherein
the coverage R of at least one layer among the interlayer-insulator-films is different from the coverage R of other layer.
5. The device according to claim 1, wherein
the shape of the reinforcement member of at least one layer among the interlayer-insulator-films are different from the shape of the reinforcement member of other layer.
6. The device according to claim 1, wherein
the reinforcement members are provided to be located at the same height as the wirings, at least partially contacting the low-relative-dielectric-constant-films within the interlayer-insulator-films.
7. The device according to claim 1, wherein
the reinforcement member is provided inside of each of the interlayer-insulator-film with being separated from the wiring by at least 2 \u03bcm.
8. The device according to claim 1, wherein
a plurality of the reinforcement members are provided surrounding the periphery of the wiring inside of each of the interlayer-insulator-film.
9. The device according to claim 8, wherein
a closest interval between a region provided with the plurality of the reinforcement members and the wiring inside of each of the interlayer-insulator-film is 250 \u03bcm or less.
10. The device according to claim 8, wherein
the plurality of the reinforcement members are arranged regularly inside of each of the interlayer-insulator-film.
11. The device according to claim 1, wherein
the reinforcement members are formed so that a planar shape thereof is any of a square shape, a rectangular shape, a crisscross shape, a L-shape, a key-shape, a T-shape, a mesh-like shape, a comb-like shape, a shelf-like shape, and a fence-like shape.
12. The device according to claim 1, wherein
each of the interlayer-insulator-film comprises a stacking film of at least one layer of the low-relative-dielectric-constant-film and at least one layer of an insulator film having a relative-dielectric-constant more than 3.4.
13. The device according to claim 12, wherein
the plugs are provided with being partially contacted the insulator films having a relative-dielectric-constant more than 3.4 at least inside of the interlayer-insulator-films.
14. The device according to claim 1, further comprising:
at least one layer of other interlayer-insulator-film, entirely formed by an insulator film having a relative-dielectric-constant more than 3.4 and stacked continuously on the interlayer-insulator-film of the upper layer among the interlayer-insulator-films;
at least one other wiring provided within the other interlayer-insulator-film;
at least one other plug provided in the other interlayer-insulator-film with being connected to the lower part of the other wiring; and
at least one other reinforcement member provided in the other interlayer-insulator-film with being separated from the other wiring at a predetermined interval, and electrically cut from the other wiring and the other plug; and wherein
for the other reinforcement member, a value obtained by dividing an area of a part that is exposed on an upper face of the other interlayer-insulator-film by a length of a part contacting the other interlayer-insulator-film of the part that is exposed on the upper face of the other interlayer-insulator-film is defined to be S;
a Young’s modulus of a layer on which the other plug is provided among the other interlayer-insulator-film is defined to be EP;
a Young’s modulus of a layer on which the other wiring is provided among the other interlayer-insulator-film is defined to be EW;
a Young’s modulus of the other wiring is defined to be EM;
a film thickness of a layer on which the other plug is provided among the other interlayer-insulator-film is defined to be dP;
a film thickness of a layer on which the other wiring is provided among the other interlayer-insulator-films is defined to be dW;
a coverage of the other reinforcement member per unit area in an area in the other interlayer-insulator-film where the other reinforcement member is provided is defined to be R; and
the S, the EP, the EW, the EM, the dP, the dW, and the R satisfy a relation shown in the following formula for the other interlayer-insulator-film:
0.025
\xd7
(
E
P
\xd7
d
P
+
(
E
W
\xd7
(
1
–
R
)
+
E
M
\xd7
R
)
\xd7
d
W
d
P
+
d
W
)
0.4
<
S
<
0.0625
\xd7
(
E
P
\xd7
d
P
+
(
E
W
\xd7
(
1
–
R
)
+
E
M
\xd7
R
)
\xd7
d
W
d
P
+
d
W
)
0.4
.
15. The device according to claim 14, wherein
the S, the EP, the EW, the EM, the dP, the dW, and the R satisfy a relation shown in the following formula for the other interlayer-insulator-film:
0.03
\xd7
(
E
P
\xd7
d
P
+
(
E
W
\xd7
(
1
–
R
)
+
E
M
\xd7
R
)
\xd7
d
W
d
P
+
d
W
)
0.4
<
S
<
0.05
\xd7
(
E
P
\xd7
d
P
+
(
E
W
\xd7
(
1
–
R
)
+
E
M
\xd7
R
)
\xd7
d
W
d
P
+
d
W
)
0.4
.
16. The device according to claim 14, wherein
at least one layer of the layer on which the other plug is provided and the layer on which the other wiring is provided in the other interlayer-insulator-film comprises a stacking film of at least two layers of insulator films;
a Young’s modulus of an i-th insulator film from top or bottom of said stacking film is defined to be Ei;
the film thickness of the i-th insulator film is defined to be di;
a complex Young’s modulus that is a Young’s modulus of the entire stacking film is defined to be EC;
a total film thickness of the entire stacking film is defined to be dT;
the Ei, the di, the EC, and the dT satisfy a relation shown in the following formulas;
E
C
=
\u2211
i
\u2062
E
i
\u2062
d
i
\u2211
i
\u2062
d
i
\u2062
\u2062
(
i
\u2062
:
\u2062
\u2062
Natural
\u2062
\u2062
number
\u2062
\u2062
not
\u2062
\u2062
less
\u2062
\u2062
than
\u2062
\u2062
1
)
d
T
=
\u2211
i
\u2062
d
i
\u2062
(
i
\u2062
:
\u2062
\u2062
Natural
\u2062
\u2062
number
\u2062
\u2062
not
\u2062
\u2062
less
\u2062
\u2062
than
\u2062
\u2062
1
)
a Young’s modulus of the entire layer formed by the stacking film among the Young’s modulus EP of the layer where the other plug is provided and a Young’s modulus EW of the layer where the other wiring is provided is defined to be the complex Young’s modulus EC; and
a film thickness of the entire layer formed by the stacking film among the film thickness dP of the layer where the other plug is provided and a film thickness dW of the layer where the other wiring is provided is defined to be the total film thickness dT.
17. The device according to claim 14, wherein
the other reinforcement member is provided to be located at the same height as the other wiring within the other interlayer-insulator-film.
18. The device according to claim 14, wherein
the other reinforcement member is provided inside of the other interlayer-insulator-film with being separated from said other wiring by at least 2 \u03bcm.
19. The device according to claim 14, wherein
a plurality of the other reinforcement members are provided surrounding the periphery of the other wiring inside of the other interlayer-insulator-film.
20. The device according to claim 14, wherein
the other reinforcement member is formed so that a planar shape thereof is any of a square shape, a rectangular shape, a crisscross shape, a L-shape, a key-shape, a T-shape, a mesh-like shape, a comb-like shape, a shelf-like shape, and a fence-like shape.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A circuit board, comprising:
a supporting substrate;
light emitting elements mounted to the supporting substrate;
a through hole passing through the supporting substrate; and
a connector inserted into the through hole and for supplying an electric current to the light emitting elements.
2. The circuit board of claim 1, wherein the light emitting elements are plural in number, and the through hole is formed at a position corresponding to a spaced portion between the light emitting elements.
3. The circuit board of claim 1, wherein the through hole is formed at a position corresponding to a lower side of the light emitting elements.
4. The circuit board of claim 1, wherein the supporting substrate comprises a first region and a second region extending to be bent from the first region, and the through hole is formed in at least one of the first region and the second region.
5. The circuit board of claim 4, wherein the light emitting elements are mounted to one surface of the first region of the supporting substrate, and the circuit board further comprises a pad portion having pad wirings connected to the light emitting elements on one surface of the first region; and a string portion having string wirings for transmitting electrical signals to the light emitting elements in the first region or the second region.
6. The circuit board of claim 5, further comprising a bending hole formed in a bending portion between the first region and the second region.
7. The circuit board of claim 6, wherein the connector is mounted to the second region, and the string portion has the string wirings formed on another surface opposite to the one surface of the first region so as to be connected to the pad wirings through the bending hole.
8. A lighting device, comprising:
a circuit board of claim 1; and
an outer housing including an external through hole corresponding to a through hole of the circuit board.
9. A circuit board, comprising:
a supporting substrate;
light emitting elements mounted to the supporting substrate; and
a through hole through which the supporting substrate passes, and into which a connector for supplying currents to the light emitting elements is inserted.
10. The circuit board of claim 9, wherein the light emitting elements are plural in number, and the through hole is formed at a position corresponding to a spaced portion between the light emitting elements.
11. The circuit board of claim 9, wherein the through hole is formed at a position corresponding to a lower side of the light emitting elements.
12. The circuit board of claim 9, wherein the supporting substrate comprises a first region and a second region extending to be bent from the first region, and the through hole is formed in at least one of the first region and the second region.
13. The circuit board of claim 12, wherein the light emitting elements are mounted to one surface of the first region, and the circuit board further comprises a pad portion having pad wirings connected to the light emitting elements on the one surface of the first region, and a string portion having string wirings for transmitting electrical signals to the light emitting elements in the first region or the second region.
14. The circuit board of claim 13, further comprising a bending hole formed in a bending portion between the first region and the second region.
15. The circuit board of claim 14, wherein the connector is mounted to the second region, and the string portion has string wirings formed on another surface opposite to the one surface of the first region so as to be connected to the pad wirings through the bending hole.