1. A surgical tool holder, comprising:
a base portion configured for releasably mounting to a first surgical tool support in a fixed association;
an incremental retraction portion comprising:
a drawing mechanism configured to operably engage and incrementally draw a surgical retractor under tension to a selected position and hold the surgical retractor in the selected position, and
a manually operable crank member configured to operate the drawing mechanism; and
an attachment portion comprising:
a post configured to rotatably mount a yoke of a second surgical tool support, and
a securing member operably associated with the post to releasably fix the second surgical tool support thereto.
2. The surgical tool holder of claim 1, wherein the base portion is configured to releasably mount to a cylindrical bar of the first surgical tool support.
3. The surgical tool holder of claim 2, wherein the base portion comprises a clamping member defining a bore configured and dimensioned to receive, and clamp to, the cylindrical bar.
4. The surgical tool holder of claim 3, wherein the bore has a bore axis, and the incremental retraction portion and the attachment portion are disposed substantially on opposite sides of the bore axis.
5. The surgical tool holder of claim 4, wherein the attachment portion comprises a platform supportively connecting the post to the base portion, and the post extends from the platform substantially tangentially to the bore axis.
6. The surgical tool holder of claim 3, wherein the incremental retraction portion comprises a drawing housing configured to receive and guide the surgical retractor during retraction, and at least a portion of the clamping member is of unitary construction with at least a portion of the drawing housing.
7. The surgical tool holder of claim 1, wherein the attachment portion comprises a locating protrusion disposed for positioning the yoke axially on the post,
wherein the securing member is operably associated with the post to clamp the post-mounted yoke against the locating protrusion.
8. The surgical tool holder of claim 7, wherein the securing member is in threaded association with the post to clamp against the yoke mounted thereon.
9. The surgical tool holder of claim 8, wherein the securing member comprises a wing nut.
10. The surgical tool holder of claim 1, wherein the drawing mechanism and crank member are rotatable to incrementally draw the surgical retractor.
11. The surgical tool holder of claim 10, wherein the drawing mechanism comprises a pinion operably engageable with a rack of the surgical retractor.
12. A surgical retraction assembly, comprising:
the surgical tool holder of claim 11, and
a surgical retractor, which comprises a rack configured and dimensioned to mesh with the pinion to draw the rack upon rotation of the pinion.
13. The surgical retraction assembly of claim 12, wherein the rack and pinion are configured such that the pinion is rotatable to at least one blocking position in which the pinion blocks further extension of the rack from the selected position.
14. The surgical retraction assembly of claim 13, wherein the pinion is configured to draw the rack in a drawing axis and has proximal and distal sides aligned parallel to the drawing axis, the rack comprising teeth engaged with the pinion, which teeth extend to the proximal and distal sides to provide the at least one blocking position.
15. The surgical tool holder of claim 1, wherein the drawing mechanism comprises a ratchet.
16. The surgical tool holder of claim 1, wherein the incremental retraction portion is configured to draw the surgical retractor in a drawing axis, and the post has a post axis that extends about 60\xb0 to 120\xb0 from the drawing axis.
17. The surgical tool holder of claim 3, wherein the bore has a bore axis, and the incremental retraction portion is configured to draw the surgical retractor along a substantially nonadjustable drawing axis that is oriented about 60\xb0 to 120\xb0 from the bore axis.
18. The surgical tool holder of claim 17, wherein the bore has a bore diameter, and the incremental retraction portion is oriented to draw the surgical retractor aligned within the bore diameter outside the bore.
19. The surgical tool holder of claim 17, wherein the incremental retraction portion is oriented to draw the surgical retractor within half of one bore diameter outside the bore.
20. A surgical retraction assembly, comprising:
the surgical tool holder of claim 1;
a first surgical tool support to which the base portion is fixed;
a surgical retractor in drawn association with the incremental retraction portion; and
a second surgical tool support, which comprises a hydra, fixed on the post.
21. The surgical retraction assembly of claim 20, wherein the surgical tool holder is positioned to, and the surgical retractor is configured to, retract a xiphoid.
22. The surgical retraction assembly of claim 21, wherein the surgical retractor comprises a retraction blade having a notch configured and disposed to receive the tip of the xiphoid to minimize or prevent damage thereto during the retraction thereof.
23. A method of preparing a surgical tool holder which comprises providing a base portion that releasably mounts to a first surgical tool support in a fixed association therewith, an incremental retraction portion comprising a drawing mechanism configured to operably engage and incrementally draw a surgical retractor under tension to a selected position and hold the surgical retractor in the selected position, and a manually operable crank member configured to operate the drawing mechanism, and an attachment portion comprising a post configured to rotatably mount a yoke of a second surgical tool support, and operatively associating a securing member with the post that releasably fixes the second surgical tool support thereto.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A semiconductor structure comprising a non-single-crystal semiconductor film including a channel region for an active device, and a support substrate that supports the non-single-crystal semiconductor film, the channel region having an oxygen concentration not higher than 11018 atomscm3 and a carbon concentration not higher than 11018 atomscm3.
2. The semiconductor structure according to claim 1, wherein each of the oxygen concentration and the carbon concentration is not higher than 51017 atomscm3.
3. The semiconductor structure according to claim 1, wherein the channel region includes a metal element with a concentration not higher than 11017 atomscm3.
4. The semiconductor structure according to claim 3, wherein the concentration of the metal element is not higher than 51016 atomscm3.
5. A manufacturing method for a semiconductor structure having a non-single-crystal semiconductor film including a channel region for an active device, and a support substrate that supports the non-single-crystal semiconductor film, the method comprising subjecting an inner wall of a film-forming chamber to a surface etching process with a fluorine-based gas, coating the inner wall with an amorphous semiconductor film with a thickness of 50 to 1000 nm, placing the support substrate in the film-forming chamber and forming the non-single-crystal semiconductor film, and melting and recrystallizing the non-single-crystal semiconductor film by heating.
6. The manufacturing method according to claim 5, further comprising subjecting the inner wall to a baking process in a temperature range of 80 to 150 C.
7. The manufacturing method according to claim 5, wherein energy light is radiated to heat the non-single-crystal semiconductor film.
8. The manufacturing method according to claim 5, wherein the non-single-crystal semiconductor film is heated for a heating time of 10 seconds or less at a heating place.
9. The manufacturing method according to claim 7, wherein the heating time is one second or less.
10. A manufacturing apparatus for a semiconductor structure having a non-single-crystal semiconductor film including a channel region for an active device, and a support substrate that supports the non-single-crystal semiconductor film, the apparatus comprising a film-forming unit that accommodates the support substrate in a film-forming chamber and forms the non-single-crystal semiconductor film, and a crystallizing unit that melts and recrystallizes the non-single-crystal semiconductor film, the film-forming chamber having an inner wall formed of a metal containing aluminum.
11. The manufacturing apparatus according to claim 10, wherein a surface of the inner wall includes fluorine atoms and is coated with an amorphous semiconductor film with a thickness of 50 to 1000 nm.
12. A semiconductor device comprising a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region, the channel region having an oxygen concentration not higher than 11018 atomscm3 and a carbon concentration not higher than 11018 atomscm3.
13. The semiconductor device according to claim 12, wherein the active device is a thin-film transistor including source and drain regions disposed on both sides of the channel region in the non-single-crystal semiconductor film, and a gate electrode layer insulated from the channel region by an insulation film.
14. The semiconductor device according to claim 13, wherein the channel region is located within a single crystal grain that has a growth direction coinciding with a direction of arrangement of the source and drain regions.
15. The semiconductor device according to claim 12, wherein each of the oxygen concentration and the carbon concentration is not higher than 51017 atomscm3.
16. The semiconductor device according to claim 12, wherein the non-single-crystal semiconductor film includes a metal element with a concentration not higher than 11017 atomscm3.
17. The semiconductor device according to claim 16, wherein the concentration of the metal element is not higher than 51016 atomscm3.
18. A semiconductor device comprising a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region, the channel region having an oxygen concentration not higher than 11018 atomscm3 and a stacking fault density not higher than 1106 cm3.
19. A manufacturing method for a semiconductor device having a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region, the method comprising subjecting an inner wall of a film-forming chamber to a surface etching process with a fluorine-based gas, coating the inner wall with an amorphous semiconductor film with a thickness of 50 to 1000 nm, placing the support substrate in the film-forming chamber and forming the non-single-crystal semiconductor film, and melting and recrystallizing the non-single-crystal semiconductor film, thus forming the active device having the part of the non-single-crystal semiconductor film as the channel region.