1. A negative-working imageable element comprising a substrate and having thereon a radiation-sensitive imageable layer,
said imageable element further comprising a water-soluble overcoat disposed on said imageable layer, said overcoat comprising at least one poly(vinyl alcohol) having a saponification degree of at least 90%, an alkoxylation product of an alkanol, and either a 2-sulfonato succinic acid dialkylester or an alkoxylation product of a 1,4-butanediol.
2. The element of claim 1 wherein said overcoat, in its dry state, has a dynamic coefficient of friction of at least 0.25.
3. The element of claim 1 wherein said overcoat, in its dry state, has a dynamic coefficient of friction of at least 0.35.
4. The element of claim 1 wherein imageable element has an imaging sensitivity of from about 300 to about 450 nm or from about 700 to about 1400 nm, and said radiation-sensitive imageable layer comprises a composition that provides free radicals for polymerization.
5. The element of claim 1 wherein said poly(vinyl alcohol) is present in said overcoat in an amount of from about 60 to about 99 weight %, said an alkoxylation product of an alkanol is present in an amount of at least 0.05 weight %, and said 2-sulfonato succinic acid dialkylester or alkoxylation product of a 1,4-butanediol are present in an amount of at least 0.1 weight %, all weight percentages based on overcoat total dry weight.
6. The element of claim 1 wherein said polymer binder in said overcoat is a poly(vinyl alcohol) having a degree of saponification of from about 95 to about 99%.
7. The element of claim 1 wherein said overcoat further comprises a water-soluble polymer that is not a poly(vinyl alcohol) in an amount of from about 2 to about 38 weight %, and said second water-soluble polymer is derived from one or more of a vinyl pyrrolidone, vinyl imidazole, vinyl caprolactone, ethyleneimine, and vinyl acetamide.
8. The element of claim 1 wherein said alkoxylation product of an alcohol is present in an amount of from about 0.05 to about 0.7 weight %, and is derived from a linear or branched C4 to C20 alcohol or oxyalcohol.
9. The element of claim 1 wherein said 2-sulfonato succinic acid C4 to C18 dialkylester or ethylene oxide or propylene oxide product of a 1,4-butanediol that is present in an amount of from about 0.1 to about 3 weight %.
10. The element of claim 1 wherein said alkoxylation product of an alcohol is present in an amount of from about 0.1 to about 0.5 weight %, said 2-sulfonato succinic acid C4 to C18 dialkylester or ethylene oxide or propylene oxide product of a 1,4-butanediol that is present in an amount of from about 0.5 to about 2 weight %, said poly(vinyl alcohol) is present in an amount of from about 80 to about 95 weight %, and said overcoat further comprises a second water-soluble polymer that is not a poly(vinyl alcohol) and that is present in an amount of from about 2 to about 17 weight %.
11. The element of claim 1 wherein said 2-sulfonato succinic acid dialkylester and an alkoxylation product of a 1,4-butanediol are represented by the following Structures I and II, respectively:
wherein \u201calkyl\u201d represents an alkyl group having 4 to 18 carbon atoms, R1 through R4 are independently alkyl groups having 1 to 6 carbon atoms, and m and n are the same or different integers so that the sum of m and n is 1 to 30.
12. The element of claim 11 wherein said 2-sulfonato succinic acid dialkylester is represented by the following Structure III:
13. A method of providing a lithographic printing plate comprising:
A) imagewise exposing said imageable element of claim 1 to provide exposed and non-exposed regions, and
B) processing said imagewise exposed imageable element to remove predominantly only said non-exposed regions.
14. The method of claim 13 wherein said imagewise exposure is carried out at a wavelength of from about 300 to about 450 nm.
15. The method of claim 13 wherein said imagewise exposure is carried out at a wavelength of from about 700 to about 1400 nm.
16. The method of claim 13 wherein said imageable element comprises an overcoat comprising an alkoxylation product of an alcohol is present in an amount of from about 0.1 to about 0.5 weight %, a 2-sulfonato succinic acid C4 to C18 dialkylester or ethylene oxide or propylene oxide product of a 1,4-butanediol that is present in an amount of from about 0.5 to about 2 weight %, a poly(vinyl alcohol) that is present in an amount of from about 80 to about 95 weight %, and a second water-soluble polymer that is not a poly(vinyl alcohol) and that is present in an amount of from about 2 to about 17 weight %,
wherein said 2-sulfonato succinic acid dialkylester and an alkoxylation product of a 1,4-butanediol are represented by the following Structures I and TI, respectively:
wherein alkyl represents an alkyl group having 4 to 18 carbon atoms, R1 through R4 are independently alkyl groups having 1 to 6 carbon atoms, and m and n are the same or different integers so that the sum of m and n is 1 to 30.
17. A lithographic printing plate obtained by the method of claim 13.
18. A stack of multiple negative-working imageable elements wherein each imageable element comprises a substrate and has thereon a thermally-sensitive imageable layer,
each imageable element further comprising a water-soluble overcoat disposed on said imageable layer, said overcoat comprising at least one poly(vinyl alcohol) having a saponification degree of at least 90%, an alkoxylation product of an alkanol, and either a 2-sulfonato succinic acid dialkylester or an alkoxylation product of a 1,4-butanediol,
wherein said multiple negative-working imageable elements are separated from each other with interleaf paper and said overcoat has a dynamic coefficient of friction of at least 0.25 with respect to said interleaf paper.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method comprising:
partitioning a non-volatile memory device into a first memory portion and a second memory portion, wherein said first memory portion includes a plurality of memory cells, wherein said plurality of memory cells include tunnel oxide layers;
operating said first memory portion in a standby mode while operating said second memory portion in a readwrite mode; and
applying a healing polarization to said first memory portion in said standby mode to redistribute electrical oxide charges in said tunnel oxide layers of said plurality of memory cells of said first memory portion of said non-volatile memory device.
2. The method of claim 1, wherein said healing polarization is applied to said first memory portion for substantially one second or more.
3. The method of claim 1, wherein said first memory portion comprises a block of memory cells of said non-volatile memory device.
4. The method of claim 1, further comprising returning said first memory portion to operate in said readwrite mode.
5. The method of claim 4, further comprising:
subsequent to returning said first memory portion to operate in said readwrite mode, applying said healing polarization to said second memory portion; and
returning said second memory portion to operate in said readwrite mode.
6. The method of claim 1, further comprising:
applying said healing polarization process to said first memory portion in response to detecting one or more bit errors from said first memory portion.
7. The method of claim 1, wherein said applying said healing polarization comprises applying a substantially constant electric field to a control gate of said memory cells of said first memory portion during said standby mode.
8. The method of claim 1, wherein said healing polarization comprises a pulsed polarization to generate a pulsed electric field between a floating gate and a substrate of said memory cells of said first memory portion during said standby mode.
9. A non-volatile memory device comprising:
a memory cell array including a first memory portion and a second memory portion, wherein said first memory portion includes a plurality of memory cells, wherein said plurality of memory cells include tunnel oxide layers; and
a controller adapted to apply a healing polarization to said first memory portion while said first memory portion operates in a standby mode and while said second memory portion operates in a readwrite mode, wherein said healing polarization comprises redistributing electrical oxide charges in said tunnel oxide layers of said plurality of memory cells of said first memory portion of said non-volatile memory device.
10. The non-volatile memory device of claim 9, wherein said controller is further adapted to apply said healing polarization to said first memory portion for substantially one second or more.
11. The non-volatile memory device of claim 9, wherein said first memory portion comprises a block of memory cells of said non-volatile memory device.
12. The non-volatile memory device of claim 9, wherein said healing polarization comprises a substantially constant electric field applied to a control gate of said memory cells of said first memory portion during said standby mode.
13. The non-volatile memory device of claim 9, wherein said healing polarization comprises a pulsed polarization to generate a pulsed electric field between a floating gate and a substrate of said memory cells of said first memory portion during said standby mode.
14. A system comprising:
a processor to execute one or more applications stored in a memory cell array of a non-volatile memory device, wherein said memory cell array includes a first memory portion and a second memory portion, wherein said first memory portion includes a plurality of memory cells, wherein said plurality of memory cells include tunnel oxide layers; and
a controller to apply a healing polarization to said first memory portion of said memory cell array while said first memory portion operates in a standby mode and while said second memory portion of said memory cell array operates in a readwrite mode, wherein said healing polarization comprises redistributing electrical oxide charges in said tunnel oxide layers of said plurality of memory cells of said first memory portion of said non-volatile memory device.
15. The system of claim 14, wherein said controller is further adapted to apply said healing polarization to said first memory portion for substantially one second or more.
16. The system of claim 14, wherein said first memory portion comprises a block of memory cells of said non-volatile memory device.
17. The system of claim 14, wherein said healing polarization comprises a substantially constant electric field applied to a control gate of said memory cells of said first memory portion during said standby mode.
18. The system of claim 14, wherein said healing polarization comprises a pulsed polarization to generate a pulsed electric field between a floating gate and a substrate of said memory cells of said first memory portion during said standby mode.