1. A method of ripping a wire from a cable, the method comprising:
clamping a cable-ripping tool onto a cable;
gripping a portion of a wire from the cable with a gripping member of the cable-ripping tool, the gripping comprising moving the gripping member relative to a spool of the cable-ripping tool, wherein the gripping of the wire comprises a spring biasing the gripping member into engagement with the portion of the wire; and
applying a force to rotate the spool so that the wire rips through a jacket of the cable and winds onto the spool, wherein the gripping of the wire occurs prior to the application of the force to rotate the spool.
2. The method of claim 1, wherein the gripping comprises the spring biasing the gripping member into engagement with the portion of the wire within a gripping aperture in the spool.
3. The method of claim 2, wherein the portion of the wire is a first portion of the wire and wherein the gripping comprises engaging a second portion of the wire with an edge at an opening of the gripping aperture, the second portion of the wire being a different portion from the first portion of the wire.
4. The method of claim 3, wherein rotating the spool comprises actuating a ratchet mechanism attached to the spool.
5. The method of claim 4, wherein the clamping comprises clamping the tool onto the cable with the spool mounted on the cable so that the spool is oriented with an axis of the spool at an angle less than ninety degrees relative to a longitudinal axis of the cable.
6. The method of claim 1, wherein the gripping comprises engaging the wire with multiple edges.
7. The method of claim 1, wherein the applying the force to rotate of the spool comprises actuating a ratchet mechanism attached to the spool.
8. The method of claim 1, wherein the clamping comprises clamping the tool onto the cable with the spool mounted on the cable so that the spool is oriented with an axis of the spool at an angle less than ninety degrees relative to a longitudinal axis of the cable.
9. The method of claim 1, wherein the gripping member comprises a gripping arm that rotates about an axis, and wherein the gripping of the wire comprises the spring biasing the gripping arm to rotate about the axis and toward the portion of the wire so that a portion of the gripping arm contacts the portion of the wire.
10. The method of claim 1, wherein the gripping of the wire comprises bringing the wire together with the cable ripping tool so that the portion of the wire is gripped by a portion of the gripping member and the wire extends in a first direction from the portion of the gripping member and toward a body of the cable.
11. The method of claim 10, wherein the cable ripping tool is configured such that with the wire gripped by the gripping member, biasing the portion of the gripping member in the first direction biases the portion of the gripping member toward the portion of the wire.
12. The method of claim 10, wherein the gripping of the wire comprises a gripping point of a gripping arm, which rotates around an axis, contacting the wire and biasing the wire against an opposing surface of the tool, and wherein a portion of a line extending perpendicular to the opposing surface and through the gripping point is located in a direction opposite to the first direction from the axis.
13. The method of claim 12, wherein the gripping of the wire comprises a gripping point of a gripping arm, which rotates around an axis, contacting the wire, wherein the cable ripping tool is configured such that with the wire gripped by the gripping arm, biasing the gripping point in a direction opposite to the first direction biases the gripping point toward the portion of the wire.
14. The method of claim 1, wherein the gripping of the wire comprises the spring biasing at least a portion of the gripping member to slide toward the portion of the wire.
15. The method of claim 1, wherein the gripping member further comprises a biasing arm, and wherein the method further comprises manually moving the biasing arm to release the gripping member from the wire.
16. A method of ripping a wire from a cable, the method comprising:
clamping a cable-ripping tool onto a cable;
gripping a portion of a wire from the cable with a gripping member of the cable-ripping tool, the gripping comprising moving the gripping member relative to a spool of the cable-ripping tool, wherein:
the gripping of the portion of the wire comprises a spring biasing a gripping edge of the gripping member into engagement with portion of the wire within a gripping aperture in the spool; and
the cable ripping tool is configured such that with the wire gripped by the gripping member, the wire extends from the gripping edge in a first direction relative to adjacent portions of the cable ripping tool toward a body of the cable, and biasing the gripping edge relative to one or more adjacent portions of the cable ripping tool in the first direction also biases the gripping edge toward the portion of the wire; and
rotating the spool so that the wire rips through a jacket of the cable and winds onto the spool.
17. The method of claim 16, wherein rotating the spool comprises actuating a ratchet mechanism attached to the spool.
18. The method of claim 16, wherein the clamping comprises clamping the tool onto the cable with the spool mounted on the cable so that the spool is oriented with an axis of the spool at an angle less than ninety degrees relative to a longitudinal axis of the cable.
19. The method of claim 16, wherein the clamping comprises clamping the tool onto the cable with the spool mounted on the cable so that the spool is oriented with an axis of the spool at an angle less than ninety degrees relative to a longitudinal axis of the cable.
20. A method of ripping a wire from a cable, the method comprising:
clamping a cable-ripping tool onto a cable;
gripping a portion of a wire from the cable, the gripping comprising:
gripping a first part of the portion of the wire with a gripping member of the cable-ripping tool, the gripping of the first part comprising moving the gripping member relative to a spool of the cable-ripping tool, wherein the gripping of the first part of the wire comprises a spring biasing a gripping edge of the gripping member to rotate about a pivot and into engagement with a first part of the portion of the wire within a gripping aperture in the spool, wherein the gripping of the first part of the wire comprises bringing the wire together with the cable ripping tool so that the wire extends into a portion of the tool in a first direction relative to the tool, and wherein the cable ripping tool is configured such that with the wire gripped by the gripping member, applying a force to the gripping edge in a direction opposite to the first direction biases the gripping edge toward the first part of the portion of the wire; and
gripping a second part of the portion of the wire, with an edge at an opening of the gripping aperture, the second part of the wire being a different part from the first part of the wire; and
rotating the spool so that the wire rips through a jacket of the cable and winds onto the spool; and
moving a biasing arm of the gripping member to oppose the biasing of the spring and release the gripping member from the wire.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A phase-change memory device comprising:
a heat-generating electrode layer;
a first insulating layer partially covering the heat-generating electrode layer, exposing a portion of the heat-generating electrode layer, and having a pore therein; and
an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting the portion of the heat-generating electrode layer exposed through the pore, and filling the pore.
2. The phase-change memory device of claim 1, wherein the width of the pore is less than 500 nm.
3. The phase-change memory device of claim 1, wherein the content (x) of antimony (Sb) in the SbxSe100-x phase-change material layer is in the range of 40 to 70.
4. The phase-change memory device of claim 1, wherein the melting point of the SbxSe100-x phase-change material layer is in the range of 540 to 570\xb0 C.
5. The phase-change memory device of claim 1, wherein the melting point of the SbxSe100-x phase-change material layer is 50 to 80\xb0 C. lower than the melting point of a Ge2Sb2Te5 phase-change material layer.
6. The phase-change memory device of claim 1, wherein a time required for crystallization of the SbxSe100-x phase-change material layer is decreased as the content (x) of antimony is increased.
7. The phase-change memory device of claim 1, wherein the crystallization temperature of the SbxSe100-x phase-change material layer is at least higher than 122\xb0 C.
8. A method of fabricating a phase-change memory device, the method comprising:
preparing a substrate;
forming a heat-generating electrode layer on the substrate;
forming a first insulating layer that partially covers the heat-generating electrode layer, exposes a portion of one side of the heat-generating electrode layer, and has a pore therein; and
forming an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer that contacts the portion of the h electrode layer exposed through the pore and fills the pore.
9. The method of claim 8, wherein the content (x) of antimony (Sb) in the SbxSe100-x phase-change material layer is in the range of 40 to 70.
10. The method of claim 8, wherein the SbxSe100-x phase-change material layer is formed by dry etching so as to remain only in a phase-change portion around the pore.
11. The method of claim 10, wherein a pressure of a chamber for etching the SbxSe100-x phase-change material layer is in the range of 3 to 5 mTorr.
12. The method of claim 10, wherein an etch gas for etching the SbxSe100-x phase-change material layer is a mixture of argon (Ar) and chlorine (Cl2).
13. The method of claim 8, further comprising forming a second insulating layer covering the phase-change material layer after forming the SbxSe100-x phase-change material layer.
14. The method of claim 13, wherein the second insulating layer is formed using electron cyclotron resonance (ECR) plasma chemical vapor deposition.
15. The method of claim 13, wherein the second insulating layer is formed at room temperature.