1. A method for manufacturing a photovoltaic module, the method comprising:
forming a photovoltaic device comprising a constituent material;
forming a hydrophilic material adjacent to the constituent material, wherein the hydrophilic material comprises an acrylate-based polymer; and
depositing a remediation agent adjacent to the hydrophilic material, such that the remediation agent is proximate to, but not contacting the constituent material.
2. The method of claim 1, wherein the hydrophilic material comprises a polyacrylate, a polymethacrylate, any mixture or copolymer including a polymethacrylate and a polyacrylate, a resin, or a polymer, or is part of a base chain of a polymeric adhesive or interlayer material.
3. The method of claim 2, wherein the polymer comprises any polymer selected from the group consisting of aminoalkyl methacrylate copolymers, aminoalkyl acrylate copolymers, methacrylic copolymers, acrylic copolymers, hydroxyalkyl methacrylate copolymers, hydroxyalkyl acrylate copolymers, glycol methacrylate copolymers, and glycol acrylate copolymers.
4. The method of claim 1, wherein the constituent material comprises:
a heavy metal;
cadmium;
a semiconductor absorber layer on a semiconductor window layer; or
a cadmium telluride layer on a cadmium sulfide layer.
5. The method of claim 1, wherein the remediation agent comprises a precipitating agent, a complexing agent, a sorbent, or a stabilization agent.
6. The method of claim 5, wherein:
the precipitating agent comprises:
a material selected from the group consisting of sulfide, hydroxide, carbonate, phosphate, and silicate;
a calcium carbonate, calcium hydroxide, calcium phosphate, or calcium sulfide;
the complexing agent comprises:
a nitrogen-containing group, a sulfur-containing group, a phosphorus-containing group, an acid, or a carbonyl group;
EDTA, cysteine, xanthates, or trimercaptotriazine; or
an ion exchange resin, beads, or membrane;
the sorbent comprises:
a material selected from the group consisting of zeolites, metal oxides, zero valent iron, carbon, tannin-rich materials, modified natural fibers, and modified synthetic fibers; or
an apatite, a clay, or an oxide; or
the stabilization agent comprises a cementious material.
7. The method of claim 1, wherein the step of forming a hydrophilic material comprises:
contacting the hydrophilic material to the constituent material;
encapsulating the remediation agent within the hydrophilic material;
depositing the hydrophilic material in the laser scribes of a heavy metal;
spin coating;
placing a free-standing film;
placing an extruded film; or
dispersing the hydrophilic material throughout an interlayer near a polymer-metal interface.
8. The method of claim 1, further comprising laminating one or more layers, wherein the photovoltaic module comprises the one or more layers.
9. A photovoltaic module comprising:
a photovoltaic device comprising a constituent material;
a remediation agent proximate to the constituent material, wherein the remediation agent is capable of remediating the constituent material; and
a hydrophilic material positioned between the constituent material and the remediation agent, wherein the hydrophilic material comprises an acrylate-based polymer.
10. The photovoltaic module of claim 9, wherein the hydrophilic material comprises a polyacrylate, a polymethacrylate, any mixture or copolymer including a polymethacrylate and a polyacrylate, a resin, or a polymer, or is part of a base chain of a polymeric adhesive or interlayer material.
11. The photovoltaic module of claim 10, wherein the polymer comprises any polymer selected from the group consisting of aminoalkyl methacrylate copolymers, aminoalkyl acrylate copolymers, methacrylic copolymers, acrylic copolymers, hydroxyalkyl methacrylate copolymers, hydroxyalkyl acrylate copolymers, glycol methacrylate copolymers, and glycol acrylate copolymers.
12. The photovoltaic module of claim 9, wherein the constituent material comprises:
a heavy metal;
cadmium;
a semiconductor absorber layer on a semiconductor window layer; or
a cadmium telluride layer on a cadmium sulfide layer.
13. The photovoltaic module of claim 9, wherein the remediation agent comprises a precipitating agent, a complexing agent, a sorbent, or a stabilization agent.
14. The photovoltaic module of claim 9, wherein:
the precipitating agent comprises:
a material selected from the group consisting of sulfide, hydroxide, carbonate, phosphate, and silicate;
a calcium carbonate, calcium hydroxide, calcium phosphate, or calcium sulfide;
the complexing agent comprises:
a nitrogen-containing group, a sulfur-containing group, a phosphorus-containing group, an acid, or a carbonyl group;
EDTA, cysteine, xanthates, or trimercaptotriazine; or
an ion exchange resin, beads, or membrane;
the sorbent comprises:
a material selected from the group consisting of zeolites, metal oxides, zero valent iron, carbon, tannin-rich materials, modified natural fibers, and modified synthetic fibers; or
an apatite, a clay, or an oxide; or
the stabilization agent comprises a cementious material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor memory device comprising:
a plurality of memory cells arranged in rows and columns, memory cells in a predetermined column being divided into a first group and a second group of memory cells;
a first signal line which is connectable to the first group of memory cells and which receives data stored in associated memory cells; and
a second signal line which is connectable to the second group of memory cells and which receives data stored in associated memory cells,
wherein memory cells in the first group of memory cells store a first type of data and memory cells in the second group of memory cells store a second type of data having mutually opposite values with respect to the first type of data.
2. The semiconductor memory device according to claim 1, further comprising:
a sense amplifier which receives the data received by the first and second signal lines and which outputs data recognized as data that is stored in the semiconductor memory device.
3. The semiconductor memory device according to claim 1, wherein the first and second types of data have mutually opposite logic level values.
4. The semiconductor memory device according to claim 1, wherein the first type of data has a positive value and the second type of data is zero.
5. A semiconductor memory device comprising:
a plurality of memory cells arranged in rows and columns, memory cells in a predetermined column being divided into a first group and a second group of memory cells, memory cells in each row being coupled to a corresponding word line, and memory cells in each column being coupled to a corresponding bit line;
a first signal line which is connectable to bit lines of memory cells in the first group and which receives data stored in associated memory cells; and
a second signal line which is connectable to bit lines of memory cells in the second group and which receives data stored in associated memory cells,
wherein the memory cells in the first group and memory cells in the second group associated with the memory cells of the first group form pairs of memory cells and each of the pairs of memory cells stores two sets of data having mutually opposite values.
6. The semiconductor memory device according to claim 5, further comprising:
a sense amplifier which receives the complementary data received by the first and second signal lines and which outputs data recognized as data stored in the semiconductor memory device.
7. The semiconductor memory device according to claim 5, wherein the complementary data have mutually opposite logic level values.
8. The semiconductor memory device according to claim 5, wherein one memory cell of the respective pairs of memory cells stores a positive value and the other memory cell of the respective pairs of memory cells stores zero value.
9. A semiconductor memory device comprising:
a plurality of pairs of memory cells arranged in rows and columns, the memory cells being divided into a first group and a second group of memory cells, one memory cell of the respective pairs of memory cells belonging to the first group and the other memory cell of the respective pairs of memory cells belonging to the second group;
a first signal line which is connectable to the first group of memory cells and which receives data stored in associated memory cells; and
a second signal line which is connectable to the second group of memory cells and which receives data stored in associated memory cells,
wherein each of the pairs of memory cells stores two sets of data having mutually opposite values.
10. The semiconductor memory device according to claim 9, further comprising:
a sense amplifier which receives the complementary data received by the first and second signal lines and which outputs data recognized as data stored in the semiconductor memory device.
11. The semiconductor memory device according to claim 9, wherein the complementary data have mutually opposite logic level values.
12. The semiconductor memory device according to claim 9, wherein one memory cell of the respective pairs of memory cells stores a positive value and the other memory cell of the respective pairs of memory cells stores zero value.