1. A semiconductor device of complementary structure comprising:
a semiconductor substrate including: (i) a first planar semiconductor region whose major surface is formed into a shape of a rectangle or a parallelogram and having compressive stress in a first direction along the major surface of the semiconductor region and tensile stress in a second direction along the major surface different from the first direction; and (ii) a second planar semiconductor region whose major surface is parallel to the major surface of the first planar semiconductor region and formed into a shape of a rectangle or a parallelogram and having tensile stress in the first direction along the major surface and compressive stress in the second direction along the major surface;
a field effect transistor of a first conductivity type formed on each major surface of the first planar semiconductor region and the second planar semiconductor region and including source and drain regions separately arranged along the direction of compressive stresses; and
a field effect transistor of a second conductivity type formed on each major surface of the first planar semiconductor region and the second planar semiconductor region and including source and drain regions separately arranged along the direction of tensile stresses.
2. The semiconductor device according to claim 1, wherein the first planar semiconductor region and the second planar semiconductor region are identical in shape and a plurality of first semiconductor regions and a plurality of second semiconductor regions are alternately arranged adjacent to each other on the semiconductor substrate.
3. The semiconductor device according to claim 1, wherein at least a portion of the field effect transistor of the first conductivity type or the second conductivity type is formed across the first planar semiconductor region and the second planar semiconductor region.
4. The semiconductor device according to claim 1, wherein a groove is formed around each of the first planar semiconductor region and the second planar semiconductor region and filled with a first material except for four corners of each of the first planar semiconductor region and the second planar semiconductor region, the first material being higher in elastic modulus than the first planar semiconductor region and the second planar semiconductor region, and filled with a second material at two diagonally opposite corners of the four corners of each of the first planar semiconductor region and the second planar semiconductor region, the second material formed of a material obtainable by a chemical change causing volumetric expansion.
5. The semiconductor device according to claim 4, wherein the first material is silicon nitride, and the second material is an oxide of silicon or a mixture of silicon and germanium.
6. The semiconductor device according to claim 4, wherein remaining two corners of the groove other than the two corners of the groove which are filled with the second material in each of the first planar semiconductor region and the second planar semiconductor region are filled with a third material which differs from the second material and is obtainable from a volume changing chemical reaction different from the volumetric expansion of the second material.
7. The semiconductor device according to claim 1, wherein each of the first planar semiconductor region and the planar second semiconductor regions is made of silicon, the first conductivity type is p type, and the second conductivity type is n type.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An ASE light source that uses rare earth-doped optical fibers as an optical amplification medium to output spontaneous emission light from the optical fibers, into which excitation light is introduced, said ASE light source is characterized that:
spontaneous emission light generated from Tm-doped optical fibers is inputted to said optical amplification medium.
2. An ASE light source as claimed in claim 1, further comprising an excitation light source that inputs, to said Tm-doped optical fibers, excitation light corresponding to energy between a 3F4-3H4 level of Tm ions and excitation light corresponding to energy between a 3H6-3F4 level.
3. An ASE light source as claimed in claim 1, further comprising an excitation light source that inputs excitation light of wavelength 1,360 to 1,445 nm to said Tm-doped optical fibers.
4. An ASE light source as claimed in claim 1, wherein excitation lights of different intensities are inputted to said Tm-doped optical fibers through their opposite ends, and said Tm-doped optical fibers generate spontaneous emission light.
5. An ASE light source as claimed in claim 1, wherein said Tm-doped optical fibers are made of fluoride glass as a base material in which Tm ion is doped.
6. An ASE light source as claimed in claim 2, wherein excitation lights of different intensities are inputted to said Tm-doped optical fibers through their opposite ends, and said Tm-doped optical fibers generate spontaneous emission light.
7. An ASE light source as claimed in claim 3, wherein excitation lights of different intensities are inputted to said Tm-doped optical fibers through their opposite ends, and said Tm-doped optical fibers generate spontaneous emission light.
8. An ASE light source as claimed in claim 5, wherein said Tm-doped optical fibers have a concentration length product of at least 30,000 ppmm and at most 100,000 ppmm and a Tm concentration of at least 1,000 ppm and at most 8,000 ppm.
9. An ASE light source that uses rare earth-doped optical fibers as an optical amplification medium to output spontaneous emission light from the optical fibers, into which excitation light is introduced, said ASE light source is characterized by comprising:
first emission means for outputting spontaneous emission light generated from the Tm-doped optical fibers; and
second emission means for outputting amplified light obtained by using the Er-doped optical fibers to amplify the output from the first emission means and spontaneous emission light generated from said Er-doped optical fibers so that the amplified light and the spontaneous emission light are superimposed on each other.
10. An ASE light source as claimed in claim 9, further comprising an excitation light source that inputs, to said Tm-doped optical fibers, excitation light corresponding to energy between a 3F4-3H4 level of Tm ions and excitation light corresponding to energy between a 3H6-3F4 level.
11. An ASE light source as claimed in claim 9, further comprising an excitation light source that inputs excitation light of wavelength 1,360 to 1,445 nm to said Tm-doped optical fibers.
12. An ASE light source as claimed in claim 9, wherein excitation lights of different intensities are inputted to said Tm-doped optical fibers through their opposite ends, and said Tm-doped optical fibers generate spontaneous emission light.
13. An ASE light source as claimed in claim 9, wherein said Tm-doped optical fibers comprise fluoride glass as a base material in which Tm ion is doped.
14. An ASE light source as claimed in claim 10, wherein excitation lights of different intensities are inputted to said Tm-doped optical fibers through their opposite ends, and said Tm-doped optical fibers generate spontaneous emission light.
15. An ASE light source as claimed in claim 11, wherein excitation lights of different intensities are inputted to said Tm-doped optical fibers through their opposite ends, and said Tm-doped optical fibers generate spontaneous emission light.
16. An ASE light source as claimed in claim 13, wherein said Tm-doped optical fibers have a concentration length product of at least 30,000 ppmm and at most 100,000 ppmm and a Tm concentration of at least 1,000 ppm and at most 8,000 ppm.
17. An ASE light source as claimed in claim 9, wherein said Er-doped optical fibers of said second emission means is made of any one of quartz glass, fluoride glass, and tellurite glass as a base material in which Er ion is doped.
18. An ASE light source as claimed in claim 9, comprising:
third emission means for outputting spontaneous emission light generated from the Er-doped optical fibers; and
first multiplexing means for multiplexing the output from said second emission means and an output from said third emission means to provide a multiplexed output.
19. An ASE light source as claimed in claim 18, wherein said Er-doped optical fibers of said third emission means is made of any one of quartz glass, fluoride glass, and tellurite glass as a base material in which Er ion is doped.
20. An ASE light source as claimed in claim 18, comprising:
fourth emission means for outputting spontaneous emission light generated from the Er-doped optical fibers; and
second multiplexing means for multiplexing the output from said third emission means and an output from said fourth emission means to provide a multiplexed output.
21. An ASE light source as claimed in claim 18, wherein said second emission means has an excitation light source that inputs excitation light corresponding to energy between a 4I152-4I132 level of Er ions, to said Er-doped optical fibers, and
comprises a splitter that splits an output from said second emission means and inputs the split output to said third emission means as excitation light.
22. An ASE light source as claimed in claim 18, wherein said second emission means has an excitation light source that inputs excitation light of wavelength 1,350 to 1,455 nm to said Er-doped optical fibers, and
comprises a splitter that splits an output from said second emission means and inputs the split output to said third emission means as excitation light.
23. An ASE light source as claimed in claim 19, comprising:
fourth emission means for outputting spontaneous emission light generated from the Er-doped optical fibers; and
second multiplexing means for multiplexing the output from said third emission means and an output from said fourth emission means to provide a multiplexed output.
24. An ASE light source as claimed in claim 19, wherein said second emission means has an excitation light source that inputs excitation light corresponding to energy between a 4I152-4I132 level of Er ions, to said Er-doped optical fibers, and
comprises a splitter that splits an output from said second emission means and inputs the split output to said third emission means as excitation light.
25. An ASE light source as claimed in claim 19, wherein said second emission means has an excitation light source that inputs excitation light of wavelength 1,350 to 1,455 nm to said Er-doped optical fibers, and comprises a splitter that splits an output from said second emission means and inputs the split output to said third emission means as excitation light.
26. An ASE light source as claimed in claim 23, wherein said Er-doped optical fibers of said fourth emission means is made of any one of quartz glass, fluoride glass, and tellurite glass as a base material in which Er ion is doped.
27. An ASE light source that uses rare earth-doped optical fibers as an optical amplification medium to output spontaneous emission light from the optical fibers, into which excitation light is introduced, said ASE light source is characterized by comprising:
first emission means for outputting spontaneous emission light generated from the Tm-doped optical fibers;
second emission means for outputting amplified light obtained by using the Er-doped optical fibers to amplify one of the outputs from the first emission means and spontaneous emission light generated from said Er-doped optical fibers so that the amplified light and the spontaneous emission light are superimposed on each other; and
multiplexing means for multiplexing the other output from said first emission means and the output from said second emission means to provide a multiplexed output.
28. An optical amplifier which uses rare earth-doped optical fibers as an optical amplification medium and which introduces signal light and excitation light into the optical amplification medium to amplify the signal light, said optical amplifier is characterized by comprising:
first amplifying means for using Er-doped optical fibers to amplify said signal light and then output the amplified signal light; and
second amplifying means for using Tm-doped optical fibers to amplify the output from the first amplifying means and then output the amplified output.
29. An optical amplifier as claimed in claim 28, wherein said first amplifying means has an excitation light source that inputs excitation light corresponding to energy between 4I152-4I112 level of Er ions, to said Er-doped optical fibers, and
said second amplifying means has an excitation light source that inputs, to said Tm-doped optical fibers, excitation light corresponding to energy between a 3F4-3H4 level of Tm ions and excitation light corresponding to energy between a 3H6-3F4 level.
30. An optical amplifier as claimed in claim 28, wherein said Tm-doped optical fibers have a Tm concentration of 500 to 3,000 ppm.
31. An optical amplifier as claimed in claim 28, further comprising third amplifying means for amplifying an output from said second amplifying means using the Er-doped optical fibers and outputting the amplified output.
32. An optical amplifier as claimed in claim 29, wherein said Tm-doped optical fibers have a Tm concentration of 500 to 3,000 ppm.
33. An optical amplifier as claimed in claim 31, wherein the Er-doped optical fibers of said first amplifying means has a concentration length product smaller than that of the Er-doped optical fibers of said third amplifying means.
34. A laser oscillator comprising:
an optical amplifier having first amplifying means for using Er-doped optical fibers to amplify signal light and then output the amplified signal light and second amplifying means for inputting the output from the first amplifying means to Tm-doped optical fibers to amplify the output from the first amplification means using excitation light and then output the amplified output;
a filter connected to an output of the optical amplifier; and
splitting means connected to an output of the filter to input one of its outputs to the optical amplifier.