1. A network correction security system that is connected between a network node and a security-related external system, detects an external attack on the network node, and corrects a weak part of the performance of the network node, comprising:
a correction agent that removes a fault generated in the network node according to a measure corresponding to a level of the fault to correct the fault, and when it is confirmed that the fault has not been completely corrected, repeats a recovery process of reallocating and dividing resources of the network node; and
a correction manager that continuously collects information for improving the security performance of the network node from the security-related external system and analyzes the collected information to control the improvement of the security performance of the network node.
2. The network correction security system as claimed in claim 1, wherein the correction manager recovers functions of the network node according to a mechanism that recovers a part of the network node or the entire network node when it is confirmed that the fault has not been completely corrected after the recovery process has been carried out.
3. The network correction security system as claimed in claim 2, wherein the correction manager improves a weak part of the performance of the network node, which is vulnerable to an external attack and is detected when the functions of the network node are recovered, based on the information for improving the security performance of the network node that is received from the security-related external system.
4. The network correction security system as claimed in claim 1, wherein the correction agent comprises:
a resourcefault monitor that monitors availability of principal resources of the network node to detect whether a fault is generated in the network node;
a fault assessor that assesses a grade of a fault detected by the resourcefault monitor; and
a fault remover that removes the fault according to a measure corresponding to the assessed grade to correct the fault.
5. The network correction security system as claimed in claim 4, wherein the correction agent further comprises a resource controller that carries out a recovery process of reallocating and dividing the resources of the network node when it is confirmed that the corrected fault has not been completely removed.
6. The network correction security system as claimed in claim 5, wherein the correction manager comprises:
a network resource manager that grasps the state of the resources of the network node when it is confirmed that the generated fault has not been completely removed after the resource controller has carried out the recovery process; and
a recovery data manager that carries out a recovery process including additionally allocating and dividing the resources of the network according to the grasped state of the resources.
7. The network correction security system as claimed in claim 6, wherein the recovery data manager recovers the functions of the network node according to a recovery mechanism including reconstructing, resetting, and rebooting a specific system of the network node when it is confirmed that the fault has not been completely removed through the recovery process of the resource controller.
8. The network correction security system as claimed in claim 6, wherein the correction manager further comprises a function creator that creates at least one new function that improves a part or the entirety of the security performance of the network node and provides the new function to the correction agent.
9. A network correction security method that detects an external attack on a network node and corrects a weak part of the performance of the network node, comprising:
(a) removing a fault generated in the network node according to a measure corresponding to a grade of the fault to correct the fault;
(b) repeating a recovery process that reallocates and divides resources of the network node when the fault has not been completely corrected in (a);
(c) recovering functions of the network node according to a mechanism of recovering a part or the entirety of the security performance of the network node when the fault has not been completely corrected after the recovery process of (b); and
(d) continuously collecting information for improving the security performance of the network node from a security-related external system and analyzing the collected information to improve the security performance of the network node.
10. The network correction security method as claimed in claim 9, wherein (d) includes improving a weak part of the performance of the network node, which is vulnerable to an external attack and is detected when the functions of the network node are recovered, based on the information for improving the security performance of the network node received from the security-related external system.
11. The network correction security method as claimed in claim 9, wherein (a) comprises:
monitoring availability of principal resources of the network node;
detecting whether a fault is generated in the network node according to the result of the monitoring step;
assessing a grade of at least one fault detected; and
removing the fault according to a measure corresponding to the assessed grade.
12. The network correction security method as claimed in claim 9, wherein (b) comprises:
confirming whether the fault has been completely removed;
grasping the state of the resources of the network node when it is confirmed that the fault has not been completely removed; and
carrying out a recovery process including additionally allocating and dividing the resources of the network node according to the grasped state of the resources.
13. The network correction security method as claimed in claim 9, wherein (c) comprises:
confirming whether the fault has been completely corrected after the security performance of the network node has been recovered;
grasping the state of the resources of the network node again when the fault has not been completely corrected;
carrying out a recovery process including additionally allocating and dividing the resources of the network node according to the grasped state of the resources; and
recovering the functions of the network node according to a recovery mechanism of rebooting a specific system of the network node when the fault has not been completely corrected even after the recovery process.
14. The network correction security method as claimed in claim 9, wherein (d) comprises:
analyzing data mining and correlation of the collected information for improving the security performance of the network node: and
determining whether the performance of the network node is improved according to the result of the analysis.
15. A recording medium including a network correction security method that detects an external attack on a network node and corrects a weak part of the performance of the network node, the network correction security method comprising:
removing a fault generated in the network node according to a measure corresponding to a grade of the fault to correct the fault;
repeating a recovery process that reallocates and divides resources of the network node when the fault has not been completely corrected;
recovering functions of the network node according to a mechanism of recovering a part or the entirety of the security performance of the network node when the fault has not been completely corrected even after the recovery process; and
continuously collecting information required for improving the security performance of the network node from a security-related external system and analyzing the collected information to improve the security performance of the network node,
wherein the recording medium is readable by a computer having a program installed therein.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A solid-state imaging device comprising: a signal line formed on a substrate; an island-shaped semiconductor arranged on the signal line; and a pixel selection line connected to a top of the island-shaped semiconductor, wherein the island-shaped semiconductor includes:
a first semiconductor layer formed as a bottom portion of the island-shaped semiconductor and connected to the signal line;
a second semiconductor layer formed above and adjacent to the first semiconductor layer;
a gate connected to the second semiconductor layer through a dielectric film;
a charge storage section comprised of a third semiconductor layer connected to the second semiconductor layer and adapted, in response to receiving light, to undergo a change in amount of electric charges therein; and
a fourth semiconductor layer formed above and adjacent to the second and third semiconductor layers,
and wherein:
the pixel selection line is comprised of a transparent conductive film; and
a part of the gate is disposed inside a depression formed in a sidewall of the second semiconductor layer.
2. The solid-state imaging device as defined in claim 1, wherein:
the signal line is an n+-type diffusion layer;
the first semiconductor layer is an n+-type diffusion layer;
the second semiconductor layer is a p-type impurity-doped region;
the third semiconductor layer is an n-type diffusion layer; and
the fourth semiconductor layer is a p+-type diffusion layer.
3. The solid-state imaging device as defined in claim 2, wherein:
a combination of the p+-type diffusion layer and the n-type diffusion layer functions as a photoelectric-conversion photodiode;
a combination of the p+-type diffusion layer, the n-type diffusion layer and the p-type impurity-doped region functions as an amplification transistor;
a combination of the n+-type diffusion layer serving as the first semiconductor layer, the p-type impurity-doped region, the n-type diffusion layer and the gate functions as a reset transistor; and
a combination of the p-type impurity-doped region and the n+-type diffusion layer serving as the first semiconductor layer functions as a diode.
4. The solid-state imaging device as defined in claim 1, wherein the island-shaped semiconductor has a square or rectangular pillar shape.
5. The solid-state imaging device as defined in claim 1, wherein the island-shaped semiconductor has a hexagonal pillar shape.
6. The solid-state imaging device as defined in claim 1, wherein the island-shaped semiconductor has a circular pillar shape.
7. A solid-state imaging apparatus comprising a plurality of the solid-state imaging devices as defined in claim 1, wherein the solid-state imaging devices are arranged in an n-row by m-column array (wherein each of n and m is an integer of 1 or more) with respect to the substrate.
8. A solid-state imaging apparatus comprising a plurality of the solid-state imaging devices as defined in claim 4, wherein the solid-state imaging devices are arranged in an n-row by m-column array (wherein each of n and m is an integer of 1 or more) with respect to the substrate.
9. A solid-state imaging apparatus comprising a plurality of the solid-state imaging devices as defined in claim 6, wherein the solid-state imaging devices are arranged in an n-row by m-column array (wherein each of n and m is an integer of 1 or more) with respect to the substrate.
10. A solid-state imaging apparatus comprising a plurality of the solid-state imaging devices as defined in claim 1, wherein the solid-state imaging devices are arranged on the substrate in a honeycomb pattern.
11. A solid-state imaging apparatus comprising a plurality of the solid-state imaging devices as defined in claim 5, wherein the solid-state imaging devices are arranged on the substrate in a honeycomb pattern.
12. A solid-state imaging apparatus comprising a plurality of the solid-state imaging devices as defined in claim 6, wherein the solid-state imaging devices are arranged on the substrate in a honeycomb pattern.
13. A method of producing the solid-state imaging device as defined in claim 1, comprising the steps of:
forming an oxide film on a silicon substrate;
forming a p-type silicon on the oxide film;
forming an oxide film-based mask and a nitride film-based mask by depositing a nitride film on the p-type silicon, depositing an oxide film on the nitride film, forming a resist for a silicon pillar, etching the oxide film and the nitride film, and removing the resist;
forming the depression in the sidewall of the p-type impurity-doped region by etching the p-type silicon to form a silicon pillar, depositing a nitride film, etching the nitride film in such a manner that a sidewall-shaped nitride film is left on a sidewall of the silicon pillar, and isotropically etching the p-type silicon;
forming the island-shaped semiconductor having the depression in the sidewall of the p-type impurity-doped region by etching the p-type silicon;
forming the n+-type diffusion layer of the island-shaped semiconductor, and the signal line, by forming an oxide film to prevent ion channeling during ion implantation, forming a continuous n+-type diffusion layer through phosphorus implantation and annealing, forming a resist for the signal line, and etching the oxide film and the silicon;
after removing the resist, the sidewall-shaped nitride film and the oxide film, forming the gate by depositing an oxide film, subjecting the oxide film to flattening and etching-back, forming a gate dielectric film, depositing polysilicon, subjecting the polysilicon to flattening and etching-back, forming a resist for the gate, and etching the polysilicon;
after removing the resist, forming the charge storage section through phosphorus implantation;
forming the p+-type diffusion layer by depositing an oxide film, subjecting the oxide film to flattening and etching-back, removing the nitride film-based mask, forming an oxide film, and performing boron implantation and annealing;
after removing the oxide film, forming the pixel selection line by depositing a transparent conductive film, forming a resist for the pixel selection line, etching the transparent conductive film, and removing the resist; and
forming a surface protection film.