What is claimed is:
1. A non-volatile memory cell formed in a substrate, the substrate having a surface, comprising:
a first well region of a first conductivity type in the substrate;
at least one impurity region of an opposite conductivity type to said first conductivity type in the first well;
a well tap region of said first conductivity type in the well; and
an isolation gate formed on the surface of the substrate between said at least one impurity region and said well tap region.
2. The non-volatile memory cell of claim 1 wherein said first well is formed in a second well, the second well having said opposite conductivity type.
3. The non-volatile memory cell of claim 1 further including a floating gate positioned adjacent said at least one impurity region.
4. The non-volatile memory cell of claim 1 wherein said isolation gate is coupled to ground.
5. The non-volatile memory cell of claim 1 wherein said first conductivity type is a p-type, and said opposite conductivity type is an n-type conductivity.
6. The non-volatile memory cell of claim 1 wherein said isolation gate comprises a polysilicon gate having a width of about 0.15 to 0.5 microns which is coupled to ground.
7. A non-volatile memory structure, comprising:
a substrate;
a first well formed in the substrate;
a second well formed in the first well in the substrate;
a floating gate overlying a portion of the surface of the substrate; and
an isolation gate overlying another portion of the surface of the substrate.
8. The non-volatile memory structure of claim 7 further including a first impurity region having a first impurity type and a second impurity region of a second impurity type, the isolation gate positioned between the first and second impurity regions.
9. The non-volatile memory structure of claim 8 wherein said first conductivity type is an n-type, and said second conductivity type is a p-type conductivity.
10. The non-volatile memory structure of claim 8 wherein said first conductivity type is a p-type, and said second conductivity type is a n-type conductivity.
11. The non-volatile memory structure of claim 8 further including a third impurity region of said first impurity type, wherein said floating gate is positioned between said first and third impurity regions.
12. The non-volatile memory structure of claim 7 wherein said isolation gate comprises a polysilicon gate having a width of about 0.15 to 0.5 microns which is coupled to ground.
13. The non-volatile memory structure of claim 7 further including a read transistor and a pro gram junction region, the floating gate capacitively coupled to said program junction region.
14. A non-volatile memory cell, comprising:
a semiconductor substrate having a first conductivity type;
a non-volatile transistor, formed in the substrate, comprising:
a floating gate;
a first well region formed in the substrate and having an opposite conductivity type to said substrate;
a second well region formed in the first well region and having the same conductivity type as said substrate;
first, second and third impurity regions in said second well region;
an isolation gate separating said first and second impurity regions.
15. The non-volatile memory cell of claim 14 wherein said isolation gate is coupled to ground.
16. The non-volatile memory cell of claim 14 further including a program junction region capacitively coupled to the floating gate.
17. The non-volatile memory cell of claim 16 further including a read transistor coupled to the non-volatile transistor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A seal plate, which is mounted on a mobile block which moves along a track rail and closes a gap between the mobile block and the track rail, the seal plate comprising:
a base material of a woven and knitted fabric or nonwoven fabric; and
a binder component which is dispersed in the base material and binds together crossing parts of fibers which form the woven and knitted fabric or nonwoven fabric, while maintaining a plurality of voids in the base material,
wherein the seal plate is not impregnated with lubrication oil.
2. The seal plate according to claim 1, wherein the base material is made of one or more kinds of fibers selected from the group consisting of an aramid fiber, a glass fiber, a carbon fiber, a poly(p-phenylenebenzobisoxazole) (PBO) fiber, and a polyester fiber.
3. The seal plate according to claim 1, wherein the binder component is made of one or more kinds of rubbers selected from the group consisting of fluororubber, ethylene propylene rubber (EPM), ethylene propylene diene monomer rubber (EPDM), hydrogenated nitrile rubber, silicone rubber, acrylic rubber, and butyl rubber.
4. A movement guide device, comprising:
a plurality of rolling elements;
a track rail along which a rolling surface for the plurality of rolling elements is provided in a longitudinal direction;
a mobile block which is assembled to the track rail via the plurality of rolling elements; and
a dust-proof member which is mounted on the mobile block and seals a gap between the mobile block and the track rail,
wherein the dust-proof member comprises:
the seal plate according to claim 1, which is formed into a plate-like shape and has a working surface conforming to an outer shape of the track rail to come into sliding contact with the track rail on the working surface; and
a housing which houses the seal plate and is fixed to the mobile block.
5. The seal plate according to claim 2, wherein the binder component is made of one or more kinds of rubbers selected from the group consisting of fluororubber, ethylene propylene rubber (EPM), ethylene propylene diene monomer rubber (EPDM), hydrogenated nitrile rubber, silicone rubber, acrylic rubber, and butyl rubber.